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Space-to-Ground Quantum key Distribution Using a Small-Sized Payload on Tiangong-2 Space Lab

Chinese physics Letters 2017年第9期34卷 18-23页

作者： Sheng-Kai liao Jin lin Ji-Gang Ren Wei-Yue liu Jia Qiang Juan {3. Yang li Qi Shen liang zhang Xue-Feng liang Hai-lin Yong Feng-Zhi li Ya-Yun {3. Yuan Cao Wen-Qi Cai Wen-Zhuo zhang Jian-Jun Jia Jin-Cai Wu Xiao-Wen Chen Shan-Cong zhang Xiao-Jun Jiang Jian-Feng Wang Yong-Mei Huang Qiang Wang Lu Ma li li Ge-Sheng Pan Qiang zhang Yu-Ao Chen Chao-Yang Lu Nai-Le liu Xiongfeng Ma Rong Shu Cheng-Zhi Peng Jian-Yu Wang Jian-Wei Pan department of Modern physics and Hefei National laboratory for Physical Sciences at the Microscale University of Science and Technology of ChinaHefei 230026 Shanghai Branch CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum PhysicsShanghai 201315 key laboratory of Space Active Opto-Electronic Technology Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai 200083 beijing UCAS Space Technology Co. LtdBeijing 100190 National Astronomical Observatories Chinese Academy of SciencesBeijing 100012 key laboratory of Optical engineering Institute of Optics and ElectronicsChinese Academy of SciencesChengdu 610209 Xinjiang Astronomical Observatory Chinese Academy of SciencesUrumqi 830011

Quantum technology establishes a foundation for secure communication via quantum key distribution （QKD）. In the last two decades, the rapid development of QKD makes a global quantum communication network feasible. In order to construct this network, it is economical to consider small-sized and low-cost QKD payloads, which can be assembled on satellites with different sizes, such as space stations. Here we report an experimental demonstration of space-to-ground QKD using a small-sized payload, from Tiangong-2 space lab to Nanshan ground station. The 57.9-kg payload integrates a tracking system, a QKD transmitter along with modules for synchronization, and a laser communication transmitter. In the space lab, a 50MHz vacuum＋weak decoy-state optical source is sent through a reflective telescope with an aperture of 200mm. On the ground station, a telescope with an aperture of 1200mm collects the signal photons. A stable and high-transmittance communication channel is set up with a high-precision bidirectional tracking system, a polarization compensation module, and a synchronization system. When the quantum link is successfully established, we obtain a key rate over 100bps with a communication distance up to 719km. Together with our recent development of QKD in daylight, the present demonstration paves the way towards a practical satellite-constellation-based global quantum secure network with small-sized QKD payloads.

关键词： QKD Space-to-Ground Quantum key Distribution Using a Small-Sized Payload on Tiangong-2 Space Lab

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Magnetic-field-induced metal-insulator quantum phase transition in CaFeAsF near the quantum limit

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Science china(physics,Mechanics & Astronomy) 2018年第12期61卷 58-62页

作者： YongHui Ma Gang Mu Tao Hu ZengWei Zhu ZhuoJun li Wei li QiuCheng Ji Xuan zhang lingling Wang XiaoMing Xie State key laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China CAS Center for Excellence in Superconducting electronics (CENSE) Shanghai200050China University of Chinese Academy of Sciences Beijing 100049China Wuhan National High Magnetic Field Center and School of physics Huazhong University of Science and TechnologyWuhan 430074China department of physics and State key {3. of Surface physics Fudan UniversityShanghai 200433China Shanghai key laboratory of High Temperature Superconductors Shanghai UniversityShanghai 200444China

The quantum limit, where only the lowest Landau level is occupied by electrons, can be achieved under a high magnetic field when the Landau level splitting is comparable with the Fermi energy. The rather small Fermi pockets and Fermi energy in CaFeAsF reported recently make this compound a good candidate for investigating the electrical transport near the quantum ***, we report high-field experiments up to 65 T on a single-crystalline CaFeAsF, which shows a metal-insulator quantum phase transition tuned by the out-of-plane magnetic field. The obtained critical exponent zν through the finite-size scaling analysis is very close to 4/3. This transition is closely associated with the evolution of electronic states approaching the quantum *** resistivity behaviors as a function of field and temperature were evaluated based on Adams-Holstein theory(A-H theory).Moreover, the in-plane component of the field, which does not affect the transport behavior in the classical region, suppressed the magnetoresistance near the quantum limit.

关键词： CaFeAsF metal-insulator quantum phase transition quantum limit iron-based superconductors

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Quantum oscillations in a hexagonal boron nitride-supported single crystalline InSb nanosheet

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Chinese physics B 2022年第9期31卷 172-179页

作者： li zhang Dong Pan Yuanjie Chen Jianhua Zhao Hongqi Xu beijing key laboratory of Quantum Devices Key Laboratory for the Physics and Chemistry of Nanodevices and School of ElectronicsPeking UniversityBeijing 100871China State key laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China beijing Academy of Quantum Information Sciences Beijing 100193China

A gated Hall-bar device is made from an epitaxially grown,free-standing InSb nanosheet on a hexagonal boron nitride(hBN)dielectric/graphite gate structure and the electron transport properties in the InSb nanosheet are studied by gate-transfer characteristic and magnetotransport measurements at low *** measurements show that the carriers in the InSb nanosheet are of electrons and the carrier density in the nanosheet can be highly efficiently tuned by the graphite *** mobility of the electrons in the InSb nanosheet is extracted from low-field magneotransport measurements and a value of the mobility exceeding~1.8×10^(4) cm^(2)·V^(-1)·s^(-1) is ***-field magentotransport measurements show well-defined Shubnikov-de Haas(SdH)oscillations in the longitudinal resistance of the InSb ***-dependent measurements of the SdH oscillations are carried out and key transport parameters,including the electron effective mass m*~0.028m0 and the quantum lifetimeτ~0.046 ps,in the InSb nanosheet are *** is for the first time that such experimental measurements have been reported for a free-standing InSb nanosheet and the results obtained indicate that InSb nanosheet/hBN/graphite gate structures can be used to develop advanced quantum devices for novel physics studies and for quantum technology applications.

关键词： InSb nanosheet Shubnikov-de Haas(SdH)oscillations electron effective mass quantum lifetime

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Carrier dynamics and terahertz photoconductivity of doped silicon measured by femtosecond pump-terahertz probe spectroscopy

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Science china(physics,Mechanics & Astronomy) 2009年第12期52卷 1944-1948页

作者： ZHOU Qingli SHI YuLei li Tong JIN Bin ZHAO DongMei zhang Cunlin beijing key laboratory for Terahertz Spectroscopy and Imaging Key Laboratory of Terahertz OptoelectronicsMinistry of EducationDepartment of PhysicsCapital Normal UniversityBeijing 100048China department of electronics Engineering Tianjin University of Technology and EducationTianjin 300222China

The carrier dynamics and terahertz photoconductivity in the n-type silicon (n-Si) as well as in the p-type Silicon (p-Si) have been investigated by using femtosecond pump-terahertz probe technique. The measurements show that the relative change of terahertz transmission of p-Si at low pump power is slightly smaller than that of n-Si,due to the lower carrier density induced by the recombination of original holes in the p-type material and the photogenerated electrons. At high pump power,the bigger change of terahertz transmission of p-Si originates from the greater mobility of the carriers compared to n-Si. The transient photoconductivities are calculated and fit well with the Drude-Smith model,showing that the mobility of the photogenerated carriers decreases with the increasing pump power. The obtained results indicate that femtosecond pump-terahertz probe technique is a promising method to investigate the carrier dynamics of semiconductors.

关键词： semiconductor terahertz carrier dynamics

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Determination of the number ofψ(3.86)events taken at BESⅢ

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Chinese physics C 2024年第9期48卷 8-20页

作者： M.Ablikim M.N.Achasov P.Adlarson O.Afedulidis X.C.Ai R.Aliberti A.Amoroso Q.An Y.Bai O.Bakina I.Balossino Y.Ban H.-R.Bao V.Batozskaya K.Begzsuren N.Berger M.Berlowski M.Bertani D.Bettoni F.Bianchi E.Bianco A.Bortone I.Boyko R.A.Briere A.Brueggemann H.Cai X.Cai A.Calcaterra G.F.Cao N.Cao S.A.Cetin J.F.Chang G.R.Che G.Chelkov C.Chen C.H.Chen Chao Chen G.Chen H.S.Chen H.Y.Chen M.L.Chen S.J.Chen S.L.Chen S.M.Chen T.Chen X.R.Chen X.T.Chen Y.B.Chen Y.Q.Chen Z.J.Chen Z.Y.Chen S.K.Choi G.Cibinetto F.Cossio J.J.Cui H.L.Dai J.P.Dai A.Dbeyssi R.E.de Boer D.Dedovich C.Q.Deng Z.Y.Deng A.Denig I.Denysenko M.Destefanis F.De Mori B.Ding X.X.Ding Y.Ding Y.Ding J.Dong L.Y.Dong M.Y.Dong X.Dong M.C.Du S.X.Du Y.Y.Duan Z.H.Duan P.Egorov Y.H.Fan J.Fang J.Fang S.S.Fang W.X.Fang Y.Fang Y.Q.Fang R.Farinelli L.Fava F.Feldbauer G.Felici C.Q.Feng J.H.Feng Y.T.Feng M.Fritsch C.D.Fu J.L.Fu Y.W.Fu H.Gao X.B.Gao Y.N.Gao Yang Gao S.Garbolino I.Garzia L.Ge P.T.Ge Z.W.Ge C.Geng E.M.Gersabeck A.Gilman K.Goetzen L.Gong W.X.Gong W.Gradl S.Gramigna M.Greco M.H.Gu Y.T.Gu C.Y.Guan Z.L.Guan A.Q.Guo L.B.Guo M.J.Guo R.P.Guo Y.P.Guo A.Guskov J.Gutierrez K.L.Han T.T.Han F.Hanisch X.Q.Hao F.A.Harris K.K.He K.L.He F.H.Heinsius C.H.Heinz Y.K.Heng C.Herold T.Holtmann P.C.Hong G.Y.Hou X.T.Hou Y.R.Hou Z.L.Hou B.Y.Hu H.M.Hu J.F.Hu S.L.Hu T.Hu Y.Hu G.S.Huang K.X.Huang L.Q.Huang X.T.Huang Y.P.Huang T.Hussain F.Hölzken N.Hüsken N.in der Wiesche J.Jackson S.Janchiv J.H.Jeong Q.Ji Q.P.Ji W.Ji X.B.Ji X.L.Ji Y.Y.Ji X.Q.Jia Z.K.Jia D.Jiang H.B.Jiang P.C.Jiang S.S.Jiang T.J.Jiang X.S.Jiang Y.Jiang J.B.Jiao J.K.Jiao Z.Jiao S.Jin Y.Jin M.Q.Jing X.M.Jing T.Johansson S.Kabana N.Kalantar-Nayestanaki X.L.Kang X.S.Kang M.Kavatsyuk B.C.Ke V.Khachatryan A.Khoukaz R.Kiuchi O.B.Kolcu B.Kopf M.Kuessner X.Kui N.Kumar A.Kupsc W.Kühn J.J.Lane P.Larin L.Lavezzi T.T.Lei Z.H.Lei M.Lellmann T.Lenz C.li C.li C.H.li Cheng li D.M.li F.li G.li H.B.li H.J.li H.N.li Hui li J.R.li J.S.li Ke li L.J.li L.K.li Lei li M.H.li P.R.li Q.M.li Q.X.li R.li S.X.li T.li W.D.li W.G.li X.li X.H.li X.L.li X.Z.li Xi Institute of High Energy physics Beijing 100049China Beihang University Beijing 100191China Bochum Ruhr-University D-44780BochumGermany Budker Institute of Nuclear physics SB RAS(BINP) Novosibirsk 630090Russia Carnegie Mellon University PittsburghPennsylvania 15213USA Central china Normal University Wuhan 430079China Central South University Changsha 410083China china Center of Advanced Science and Technology Beijing 100190China china University of Geosciences Wuhan 430074China Chung-Ang University Seoul06974Republic of Korea COMSATS University Islamabad Lahore CampusDefence RoadOff Raiwind Road54000LahorePakistan Fudan University Shanghai 200433China GSI Helmholtzcentre for Heavy Ion Research GmbH D-64291DarmstadtGermany Guangxi Normal University Guilin 541004China Guangxi University Nanning 530004China Hangzhou Normal University Hangzhou 310036China Hebei University Baoding 071002China Helmholtz Institute Mainz Staudinger Weg 18D-55099MainzGermany Henan Normal University Xinxiang 453007China Henan University Kaifeng 475004China Henan University of Science and Technology Luoyang 471003China Henan University of Technology Zhengzhou 450001China Huangshan College Huangshan 245000China Hunan Normal University Changsha 410081China Hunan University Changsha 410082China Indian Institute of Technology Madras Chennai 600036India Indiana University BloomingtonIndiana 47405USA INFN Laboratori Nazionali di Frascati (A)INFN Laboratori Nazionali di FrascatiI-00044FrascatiItaly(B)INFN Sezione di PerugiaI-06100PerugiaItaly(C)University of PerugiaI-06100PerugiaItaly INFN Sezione di Ferrara (A)INFN Sezione di FerraraI-44122FerraraItaly(B)University of FerraraI-44122FerraraItaly Inner Mongolia University Hohhot 010021China Institute of Modern physics Lanzhou 730000China Institute of physics and Technology Peace Avenue 54BUlaanbaatar 13330Mongolia Instituto de Alta Investigación Universidad de TarapacáCasilla 7DArica 1000000Chile Jilin University Changchun 130012China Joha

The number ofψ(3.86)events collected by the BESⅢdetector during the 2021 run period is determined to be(2259.3.11.1)×10~6 by counting inclusiveψ(3.86)hadronic *** uncertainty is systematic and the statistical uncertainty is ***,the numbers ofψ(3.86)events collected during the 2009 and 2012run periods are updated to be(107.7±0.6)×10~6 and(3.5.4±2.6)×10~6,*** numbers are consistent with the previous measurements within one standard *** total number ofψ(3.86)events in the three data samples is(2712.4±14.3.×10~6.

关键词： ψ(3.86) inclusive process Hadronic events BESⅢdetector

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Alloying-engineered high-performance broadband polarized Bi_(1.3.In_(0.7)Se_(3.photodetector with ultrafast response

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Nano Research 2022年第9期15卷 8451-8457页

作者： Fen zhang Yali Yu zhangxun Mo Le Huang Qinglin Xia Bo li Mianzeng Zhong Jun He Hunan key laboratory of Nanophotonics and Devices School of Physics and ElectronicsCentral South UniversityChangsha 410083China State key laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of Sciences&Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing 100083China School of Material and Energy Guangdong University of TechnologyGuangzhou 510006China department of Applied physics School of Physics and ElectronicsHunan UniversityChangsha 410082China

Topological insulators have important potential for applications in the field of nano/micro-optoelectronic ***,the large dark current seriously hinders the improvement of device *** is an important means to control the physical properties of topological *** this work,we have designed and prepared Bi_(1.3.In_(0.7)Se_(3.*** optoelectronic properties of the individual Bi_(1.3.In_(0.7)Se_(3.nanowire-based photodetector are systematically *** photodetector is very sensitive to broadband wavelength from solar-blind ultraviolet C(254 nm)to near-infrared(1,064 nm),showing superior optoelectrical properties with photoresponsivity of 241.3.A·W^(–1)and detectivity of 1.18×10^(12)Jones at 63. ***,the photodetector demonstrates ultrafast photoresponse characteristics with a photoresponse time of about 770 ns,which is 3.to 6 orders of magnitude lower than other compound semiconductors based on Bi or In reported so *** addition,it also exhibits good polarization sensitivity in a broadband range from ultraviolet C(266 nm)to near-infrared(1,064 nm)and obtained the maximum dichroic ratio is 1.73.at 1,064 *** results suggest that this platform creates new opportunities for the development of low-cost,high-sensitivity,high-speed,and broadband angle-sensitive photodetectors.

关键词： photodetectors alloying of Bi_(1.3.In_(0.7)Se_(3. broadband ultrafast response polarization

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Single event transient characterization of SiGe HBT by SPA experiment and 3.D process simulation

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Science china(Technological Sciences) 2022年第5期65卷 1193-1205页

作者： PAN XiaoYu GUO HongXia FENG YaHui liU yinong zhang JinXin li Zhuang LUO yinHong zhang FengQi WANG Tan ZHAO Wen DING lili XU JingYan The key laboratory of Particle and Radiation Imaging Ministry of EducationDepartment of Engineering PhysicsTsinghua UniversityBeijing100084China State key laboratory of Intense Pulsed Radiation Simulation and Effect Northwest Institute of Nuclear TechnologyXi’an710024China School of Materials Science and Engineering Xiangtan UniversityXiangtan411105China School of Aerospace Science and Technology Xidian UniversityXi’an710126China The 3.th Research Institute of china electronics Technology Group Corporation Hefei230088China

The single-photon absorption induced single event transient in the silicon-germanium heterojunction bipolar transistor is *** laser wavelength and bias condition have been proven to have significant impacts on the characterization of the single event transient(SET) response of the device by two-dimensional(2-D) raster *** optical analytical calculation,the laser-induced charge distribution is well-embedded in the 3.D TCAD process simulation conducted to explore the underlying physical *** addition to the ion shunt effect,the excess electron injection from the emitter to the base could play a vital role in the SET peak amplitude and charge *** impact of the metal layer on the SPA experimental results is also determined by establishing a figure of merit that will help researchers estimate the laser-induced transient sensitivity of devices with metal layer blocking.

关键词： silicon-germanium HBT single-photon absorption TCAD simulation single event transient

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Gate-tunable large-scale flexible monolayer MoS_(2)devices for photodetectors and optoelectronic synapses

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Nano Research 2022年第6期15卷 5418-5424页

作者： Na li Congli He Qinqin Wang Jianshi Tang Qingtian zhang Cheng Shen Jian Tang Heyi Huang Shuopei Wang Jiawei li Biying Huang Zheng Wei Yutuo Guo Jiahao Yuan Wei Yang Rong Yang Dongxia Shi Guangyu zhang Songshan Lake Materials laboratory Dongguan 523808China beijing National laboratory for Condensed Matter physics Key Laboratory for Nanoscale Physics and DevicesInstitute of PhysicsChinese Academy of SciencesBeijing 100190China Institute of Advanced Materials Beijing Normal UniversityBeijing 100875China School of Physical Sciences University of Chinese Academy of SciencesBeijing 100190China School of Integrated Circuits Beijing Innovation Center for Future Chips(ICFC)Tsinghua UniversityBeijing 100084China beijing National Research Center for Information Science and Technology(BNRist) Tsinghua UniversityBeijing 100084China beijing key laboratory for Nanomaterials and {3. Beijing 100190China

Photodetectors and optoelectronic synapses are vital for construction of artificial visual perception ***,the hardware implementations of optoelectronic-neuromorphic devices based on conventional architecture usually suffer from poor scalability,light response range,and limited ***,large-scale flexible monolayer MoS_(2)devices integrating photodetectors and optoelectronic synapses over the entire visible spectrum in one device have been realized,which can be used in photodetection,optical communication,artificial visual perception system,and optical artificial neural *** modulating gate voltages,we enable MoS_(2)-based devices to be photodetectors and also optoelectronic ***,the MoS_(2)-based optoelectronic synapses could implement many synaptic functions and neuromorphic characteristics,such as short-term memory(STM),long-term memory(LTM),paired-pulse facilitation(PPF),long-term potentiation(LTP)/long-term depression(LTD),and“learning-experience”***,an associative learning behavior(the classical conditioning Pavlov’s dog experiment)was emulated using paired stimulation of optical and voltage *** results facilitate the development of MoS_(2)-based multifunctional optoelectronic devices with a simple device structure,showing great potential for photodetection,optoelectronic neuromorphic computing,human visual systems mimicking,as well as wearable and implantable electronics.

关键词： MoS_(2) flexible devices gate-tunable photodetector optoelectronic synapse

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Direct discrimination between semiconducting and metallic single-walled carbon nanotubes with high spatial resolution by SEM

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Nano Research 2017年第6期10卷 1896-1902页

作者： Dongqi li Yang Wei Jin zhang Jiangtao Wang yinghong lin Peng liu Shoushan Fan Kaili Jiang State key laboratory of Low-Dimensional Quantum physics Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center Tsinghua University Beijing 100084 China Collaborative Innovation Center of Quantum Matter Beijing 100084 China FEI Company Building No. 8 No. 399 Shengxia Road Pudong Shanghai 201210 China

Single-walled carbon nanotube （SWCNT） films with a high density exhibit broad functionality and great potential in nanodevices, as SWCNTs can be either metallic or semiconducting in behavior. The films greatly benefit from characterization technologies that can efficiently identify and group SWCNTs based on metallic or semiconducting natures with high spatial resolution. Here, we developed a facile imaging technique using scanning electron microscopy （SEM） to discriminate between semiconducting and metallic SWCNTs based on black and white colors. The average width of the single-SWCNT image was reduced to -9 nm, -1/5 of previous imaging results. These achievements were attributed to reduced surface charging on the SiOdSi substrate under enhanced accelerating voltages. With this identification technique, a CNT transistor with an on/off ratio of 〉10s was fabricated by identifying and etching out the white metallic SWCNTs. This improved SEM imaging technique can be widely applied in evaluating the selective growth and sorting of SWCNTs.

关键词： single-walled carbonnanotube scanning electronmicroscopy surface charging transistor

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Application of chemical vapor-deposited monolayer ReSe2 in the electrocatalytic hydrogen evolution reaction

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Nano Research 2018年第4期11卷 1787-1797页

作者： Shaolong Jiang Zhepeng zhang Na zhang Yahuan Huan Yue Gong Mengxing Sun Jianping Shi Chunyu Xie Pengfei Yang Qiyi Fang He li lianming Tong Dan Xie lin Gu Porun liu Yanfeng zhang department of Materials Science and Engineering College of Engineering Peking University Beijing 100871 China Center for Nanochemistry (CNC) Beijing National Laboratory for Molecular Sciences College of Chemistry and Molecular Engineering Peking University Beijing 100871 China beijing National laboratory for Condensed Matter physics Institute of Physics Chinese Academy of Sciences Beijing 100190 China School of Physical Sciences University of Chinese Academy of Sciences Beijing 100190 China Institute of Microelectronics Tsinghua National Laboratory for Information Science and Technology (TNList) Tsinghua University Beijing 100084 China Collaborative Innovation Center of Quantum Matter Beijing 100190 China Centre for Clean Environment and Energy Griffith University Gold Coast 4222 Australia

Controlled synthesis of structurally anisotropic rhenium diselenide （ReSe2） with macroscopically uniform and strictly monolayer thickness as well as tunable domain shape/size is of great interest for electronics-, optoelectronics-, and electrocatalysis-related applications. Herein, we describe the controlled synthesis of uniform monolayer ReSe2 flakes with variable morphology （sunflower- or truncated-triangle-shaped） on SiO2/Si substrates using different ambient-pressure chemical vapor deposition （CVD） setups. The prepared polycrystalline ReSe2 flakes were transferred intact onto Au foil electrodes and tested for activity in the hydrogen evolution reaction （HER）. Interestingly, compared to the compact truncated-triangle-shaped ReSe2 flakes, their edge-abundant sunflower-shaped counterparts exhibited superior electrocatalytic HER activity, featuring a relatively low Tafel slope of - 76 mV/dec and an exchange current density of 10.5 μA/cm2. Thus, our work demonstrates that CVD-grown ReSe2 is a promising two- dimensional anisotropic material for applications in the electrocatalytic HER.

关键词： rhenium diselenide chemical vapor deposition(CVD) monolayer morphology control hydrogen evolution reaction (HER)

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