Single event transient characterization of SiGe HBT by SPA experiment and 3-D process simulation

作     者：PAN XiaoYu GUO HongXia FENG YaHui LIU YiNong ZHANG JinXin LI Zhuang LUO YinHong ZHANG FengQi WANG Tan ZHAO Wen DING LiLi XU JingYan PAN XiaoYu;GUO HongXia;FENG YaHui;LIU YiNong;ZHANG JinXin;LI Zhuang;LUO YinHong;ZHANG FengQi;WANG Tan;ZHAO Wen;DING LiLi;XU JingYan

作者机构：The Key Laboratory of Particle and Radiation ImagingMinistry of EducationDepartment of Engineering PhysicsTsinghua UniversityBeijing100084China State Key Laboratory of Intense Pulsed Radiation Simulation and EffectNorthwest Institute of Nuclear TechnologyXi’an710024China School of Materials Science and EngineeringXiangtan UniversityXiangtan411105China School of Aerospace Science and TechnologyXidian UniversityXi’an710126China The 38th Research Institute of China Electronics Technology Group CorporationHefei230088China 

出 版 物：《Science China(Technological Sciences)》 (中国科学（技术科学英文版）)

年 卷 期：2022年第65卷第5期

页      面：1193-1205页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：silicon-germanium HBT single-photon absorption TCAD simulation single event transient 

摘      要：The single-photon absorption induced single event transient in the silicon-germanium heterojunction bipolar transistor is *** laser wavelength and bias condition have been proven to have significant impacts on the characterization of the single event transient(SET) response of the device by two-dimensional(2-D) raster *** optical analytical calculation,the laser-induced charge distribution is well-embedded in the 3-D TCAD process simulation conducted to explore the underlying physical *** addition to the ion shunt effect,the excess electron injection from the emitter to the base could play a vital role in the SET peak amplitude and charge *** impact of the metal layer on the SPA experimental results is also determined by establishing a figure of merit that will help researchers estimate the laser-induced transient sensitivity of devices with metal layer blocking.