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Black phosphorus electronics

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Science Bulletin 2019年第15期64卷 1067-1079页

作者： Hao Huang Bei Jiang Xuming Zou Xingzhong Zhao lei liao School of Physics and Technology Wuhan UniversityWuhan430072China Key Laboratory for Micro/Nano-Optoelectronic Devices of Ministry of Education School of Physics and ElectronicsHunan UniversityChangsha410082China

As the scaling of silicon-based field-effect transistors has approached its physical limits, the search for alternative channel materials for future logic devices has attracted much attention. The discovery of graphene has unveiled another material family with layered structures called two-dimensional(2 D) materials. Black phosphorus(BP), the most stable allotrope of phosphorus, was introduced as a new type of 2 D material in 2014. Thanks to its high mobility, in-plane anisotropy and direct band gap, BP is considered to be a promising candidate for next-generation electronic and optoelectronic devices. Numerous studies have demonstrated the beneficial effects of introducing BP for device architectures. Herein, we present a review outlining recent progress towards high performance BP-based transistors. This review starts with the fundamental properties of BP, including its crystal structure, bandgap, and direct current(DC)and radio-frequency(RF) characteristics, followed by a detailed description of the modulation and application of those properties, involving anisotropy, functionalization and superlattices. Furthermore, we also discuss device design for high-performance transistors, with particular emphasis on interface engineering and device stability. Finally, we offer our perspective on the future of BP electronics, aiming to benefit colleagues who are interested in this exciting research field.

关键词： Anisotropy Doping Superlattices Contact Dielectric Transistors

High-Quality Single-Layer Graphene via Reparative Reduction of Graphene Oxide

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Nano Research 2011年第5期4卷 434-439页

作者： Boya Dai lei Fu lei liao Nan Liu Kai Yan Yongsheng Chen Zhongfan Liu Center for Nanochemistry Beijing National Laboratory for Molecular Sciences State Key Laboratory for Structural Chemistry of Unstable and Stable Species College of Chemistry and Molecular Engineering Peking University Beijing 100871 China College of Chemistry Nankai University Tianjin 300071 China

Reduction of graphene oxide （GO） is a promising low-cost synthetic approach to bulk graphene, which offers an accessible route to transparent conducting films and flexible electronics. Unfortunately, the release of oxygen-containing functional groups inevitably leaves behind vacancies and topological defects on the reduced GO sheet, and its low electrical conductivity hinders the development of practical applications. Here, we present a strategy for real-time repair of the newborn vacancies with carbon radicals produced by thermal decomposition of a suitable precursor. The sheet conductivity of thus-obtained single-layer graphene was raised more than six-fold to 350-410 S/cm （whilst retaining 〉96% transparency）. X-ray photoelectron spectroscopy （XPS） and Raman spectroscopy revealed that the conductivity enhancement can be attributed to the formation of additional sp2-C structures. This method provides a simple and efficient process for obtaining highly conductive transparent graphene films.

关键词： Graphene graphene oxide reparative reduction transparent flexible electrode

Biomimetic Modification of Super-wetting Electrospun Poly(vinylidene fluoride)Porous Fibers with Organic Dyes and Heavy Metal Ions Adsorption,Oil/Water Separation,and Sterilization Performances Toward Wastewater Treatment

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Chinese Journal of Polymer Science 2022年第7期40卷 738-753页

作者： De-Xiang Sun Xiao-lei liao Nan Zhang Ting Huang Yan-Zhou lei Xiao-Ling Xu Yong Wang School of Materials Science&Engineering Key Laboratory of Advanced Technologies of Materials(Ministry of Education)Southwest Jiaotong UniversityChengdu610031China Analytical and Testing Center Southwest Jiaotong UniversityChengdu610031China

Polymeric membranes with the integration of various functional performances toward wastewater treatment are urgently ***,most of the polymeric membranes only exhibit a single function of highly efficiently removing one kind of *** this work,a biomimetic modification method was introduced to tailor the chemical and topological structure of the porous poly(vinylidene fluoride)(PVDF)fibers prepared by *** polydopamine(PDA)nanoparticles were homogeneously introduced onto the surface of PVDF porous fibers via precisely tailoring the concentration of dopamine,which endowed the fibers with more polar groups and bigger roughness but did not destroy the crystalline *** fibrous membranes exhibited switchable superhydrophilicity and superlipophilicity characteristics,excellent adsorption abilities toward organic dyes,heavy metal ions and *** highest adsorption capacities achieved 917.4 mg/g toward methylene blue(MB),42.6 mg/g toward Cr(VI)and 74.6 g/g toward silicone oil,***,the membrane could rapidly remove the trace MB when water flowed through the *** membrane also exhibited excellent sterilization performances,and the bacterial eliminating rate achieved 99.9%for the *** and *** excellent light-to-heat conversion ability endowed the membrane with the selfheating ability,furtherly intensifying the wastewater treatment *** work confirms that the PDA nanoparticles-decorated PVDF porous fibers might be the new generation adsorbents used in wastewater treatment.

关键词： Poly(vinylidene fluoride)porous fibers Biomimetic modification Adsorption Oil/water treatment Antimicrobial performance

Van der Waals heterostructure tunnel FET with potential modulation beyond junction region

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Science China(Information Sciences) 2022年第10期65卷 311-313页

作者： Wenjing QIN Yawei LV Zhen XIA lei liao Changzhong JIANG Key Laboratory for Micro-/Nano-Optoelectronic Devices of the Ministry of Education School of Physics and Electronics Hunan University School of Physics and Electronics Hunan Normal University School of Physics and Technology Wuhan University

Dear editor,State-of-the-art semiconductor technology is approaching the atomic scale, greatly boosting the switching behavior of transistors towards the physical limit of the thermionic emission mechanism [1, 2]. A fundamental revolution is needed to break this limit and reduce power *** to the band-to-band tunneling mechanism,

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Gamma-knife for treating pituitary adenomas in 501 cases: Retrospective case analysis

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Neural Regeneration Research 2007年第7期2卷 443-445页

作者： Jin lei Hongfei liao Yi Tang Gaofeng Wu Gamma-knife Center the 363 Hospital of Chinese PLA Chengdu 610041 Sichuan Province China

BACKGROUND： Gamma-knife is characterized by low risk and low death rate, without trauma, bleeding or infection. MRI has replaced CT as a method of location, and provides a good choice for treating pituitary tumors.OBJECTIVE： To analyze the effectiveness and complications of 501 cases with pituitary adenoma by using gamma-knife retrospectively.DESIGN： Case-analysis.SETTING： Gamma-knife Center, the 363 Hospital of Chinese PLA.PARTICIPANTS： A total of 501 cases were selected from Gamma-knife Center, the 363 Hospital of Chinese PLA from January 1997 to December 2002. All patients were certainly diagnosed with CT and MRI scanning. There were 186 males and 315 females. Their ages ranged from 15 to 84 years with the mean age of 39 years. All patients provided confirmed consent.METHODS： All 501 cases with pituitary adenomas were treated by gamma-knife or combined with operations： The average iso-dose curve was 50% （30% - 65%）, peri-dose was 14 Gy and the average target number was 5.17. ① At 35 months after treatment, patients received follow-up including clinical symptoms,imaging symptoms and endocrine symptoms. ② Patients who received second gamma-knife treatment were analyzed and their complications were observed after operation.MAIN OUTCOME MEASURES： ① Follow-up results of clinical symptoms, image and endocrine indexes; ② second gamma-knife treatment; ③ postoperative complications.RESULTS： Among 501 accepted patients, 275 cases were involved in the follow up of clinical symptoms,154 in image symptoms and 98 in endocrine symptoms. ① Follow-up results of clinical symptoms, image and endocrine indexes： Follow up of clinical symptoms demonstrated that clinical symptoms of 169 cases were relieved, of 68 disappeared, and of 38 deteriorated. Follow-up of image symptoms indicated that pituitary tumor of 25 cases disappeared, of 84 shortened, of 42 not changed, and of 3 enlarged. Follow-up of endocrine symptoms suggested that endocrine of 50 cases was abnormal, of 2

关键词： orphnin morphine patch clamp sodium channel

Normal Strain-Induced Tunneling Behavior Promotion in van der Waals Heterostructures

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Chinese Physics Letters 2020年第8期37卷 189-193页

作者： Yi-Fan He lei-Xi Wang Zhi-Xing Xiao Ya-Wei Lv lei liao Chang-Zhong Jiang Affiliations Key Laboratory for Micro/Nano-Optoelectronic Devices of the Ministry of Education School of Physics and ElectronicsHunan UniversityChangsha 410082China

Van der Waals heterostructures(vdWHs)realized by vertically stacking of different two-dimensional(2D)materials are a promising candidate for tunneling devices because of their atomically clean and lattice mismatch-free interfaces in which different layers are separated by the vdW *** gaps can provide an ideal electric modulation environment on the vdWH band structures and,on the other hand,can also impede the electron tunneling behavior because of large tunneling ***,through first-principles calculations,we find that the electrically modulated tunneling behavior is immune to the interlayer interaction,keeping a direct band-to-band tunneling manner even the vdWHs have been varied to the indirect semiconductor,which means that the tunneling probability can be promoted through the vdW gap *** transition metal dichalcogenide heterostructures as examples and normal strains as the gap reducing strategy,a maximum shrinking of 33%is achieved without changing the direct tunneling manner,resulting in a tunneling probability promotion of more than 45 ***,the enhanced interlayer interaction by the strains will boost the stability of the vdWHs at the lateral direction,preventing the interlayer displacement *** is expected that our findings provide perspectives in improving the electric behaviors of the vdWH devices.

关键词： tunneling interlayer Tunnel

Ultra-high current gain tunneling hot-electron transfer amplifier based on vertical van der Waals heterojunctions

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Nano Research 2020年第8期13卷 2085-2090页

作者： Xu Zhao Peng Chen Xingqiang Liu Guoli Li Xuming Zou Yuan Liu Qilong Wu Yufang Liu Woo Jong Yu lei liao Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education&Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices School of Physics and ElectronicsChangsha410082China Henan Normal University School of PhysicsXinxiang453007China Department of Electronic and Electrical Engineering Sungkyunkwan UniversitySuwon440-746Republic of Korea

Due to the backscattered parasitic current from the barriers,the current gain of the widely used amplifier is far from *** this work,we demonstrate a vertical Au/Al2O3/BP/MoS2 tunneling hot-electron transfer amplifier with a hot-electron emitter-base junction and a p-n junction as the base-collector *** monoenergetic electrons traverse through the ultrathin Al2O3 dielectric via tunneling,which are accelerated and shifted to the collector *** devices exhibit a high current on-off ratio of>105 and a high current density(JC)of∼1,000 A/cm2 at the same ***,this work demonstrates a common-emitter current gain(β)value of 1,384 with a nanowatt power consumption at room temperature,which is a record high value among the all 2D based hot-electron ***,the temperature dependent performance is investigated,and theβvalue of 1,613 is obtained at 150 ***,this work presents the potential of 2D based transistors for high-performance applications.

关键词： bipolar junction transistor hot electron van der Waals heterostructure current gain

Van der Waals epitaxy of ultrathin crystalline PbTe nanosheets with high near-infrared photoelectric response

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Nano Research 2021年第6期14卷 1955-1960页

作者： Xinxin Zhao Qing Yin Hao Huang Qiang Yu Bo Liu Jie Yang Zhuo Dong Zhenjiang Shen Benpeng Zhu lei liao Kai Zhang School of Nano-Tech and Nano-Bionics University of Science and Technology of ChinaHefei230026China Nano Science and Technology Institute University of Science and Technology of ChinaSuzhou215123China Key Laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics(SINANO)Chinese Academy of SciencesSuzhou215123China School of Physics and Technology Wuhan UniversityWuhan430072China The Institute of Scientific and Industrial Research Osaka UniversityOsaka567-0047Japan College of Physics and Electronic Engineering Hainan Normal UniversityHaikou571158China School of Optical and Electronic Information Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074China

Lead telluride(PbTe)is one of the reliable candidates for infrared(IR)optoelectronics with optimum band-gap as well as excellent photoelectric *** interests had been paid on the growth and device applications with PbTe for the development of high-performance IR photodetectors especially those working in the near-infrared *** a great deal of effort had been made to prepare PbTe nanostructures for miniaturized detectors,it is difficult to synthesize high-quality two-dimensional(2D)PbTe crystals due to its rock-salt non-layered ***,a facile strategy for controllable synthesis of ultrathin crystalline PbTe nanosheets by van der Waals epitaxy is *** an optimized growth temperature,which determines the morphology transit from triangular pyramid islands to regular square 2D planars,PbTe nanosheets in lateral size of tens of microns with thickness down to~7 nm are ***,ultrasensitive near-infrared detectors(NIRDs)based on the as-grown 2D PbTe nanosheets have been demonstrated with an ultrahigh responsivity exceeding 3,847 A/W at the wavelength of 1,550 nm under room *** approach demonstrates that 2D PbTe nanosheets have great latent capacity of developing high-performance miniaturized IR optoelectronic devices.

关键词： two-dimensional materials van der Waals epitaxy lead telluride near-infrared photodetector

Gate-tunable linear magnetoresistance in molybdenum disulfide field-effect transistors with graphene insertion layer

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Nano Research 2021年第6期14卷 1814-1818页

作者： Hao Huang Hongming Guan Meng Su Xiaoyue Zhang Yuan Liu Chuansheng Liu Zhihong Zhang Kaihui Liu lei liao Ning Tang School of Physics and Technology Wuhan UniversityWuhan430072China State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of PhysicsPeking UniversityBeijing100871China Key Laboratory for Micro-/Nano-Optoelectronic Devices of Ministry of Education School of Physics and ElectronicsHunan UniversityChangsha410082China

Molybdenum disulfide (MoS2) holds great promise as atomically thin two-dimensional (2D) semiconductor for future electronics and opto-electronics. In this report, we study the magnetoresistance (MR) of MoS2 field-effect transistors (FETs) with graphene insertion layer at the contact interface. Owing to the unique device structure and high-quality contact interface, a gate-tunable linear MR up to 67% is observed at 2 K. By comparing with the MRs of graphene FETs and MoS2 FETs with conventional metal contact, it is found that this unusual MR is most likely to be originated from the contact interfaces between graphene and MoS2, and can be explained by the classical linear MR model caused by spatial fluctuation of carrier mobility. Our study demonstrates large MR responses in MoS2-based systems through heterojunction design, shedding lights for the future magneto-electronics and van der Waals heterostructures.

关键词： molybdenum disulfide(MoS2) contact linear magnetoresistance graphene insertion layer mobility