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Comparative Performance Evaluation of Large FPGAs with CNFET-and CMOS-based Switches in Nanoscale

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Nano-Micro Letters 2011年第3期3卷 178-188页

作者： Mohammad Hossein Moaiyeri Ali Jahanian keivan navi Faculty of Electrical and Computer Engineering. Shahid Beheshti University G.C. Nanotechnology and Quantum Computing Lab. Shahid Beheshti University G. C. VLSI Design Automation Lab. Shahid Beheshti University G. C.

Routing resources are the major bottlenecks in improving the performance and power consumption of the current FPGAs. Recently reported researches have shown that carbon nanotube field effect transistors(CNFETs) have considerable potentials for improving the delay and power consumption of the modern FPGAs. In this paper, hybrid CNFET-CMOS architecture is presented for FPGAs and then this architecture is evaluated to be used in modern FPGAs. In addition, we have designed and parameterized the CNFET-based FPGA switches and calibrated them for being utilized in FPGAs at 45 nm, 22 nm and 16 nm technology *** results show that the CNFET-based FPGA switches improve the current FPGAs in terms of performance, power consumption and immunity to process and temperature variations. Simulation results and analyses also demonstrate that the performance of the FPGAs is improved about 30%, on average and the average and leakage power consumptions are reduced more than 6% and 98% respectively when the CNFET switches are used instead of MOSFET FPGA switches. Moreover, this technique leads to more than 20.31%smaller area. It is worth mentioning that the advantages of CNFET-based FPGAs are more considerable when the size of FPGAs grows and also when the technology node becomes smaller.

关键词： Carbon nanotube field effect transistor(CNFET) FPGA switches Performance evaluation Power consumption Process variation

A low-voltage and energy-efficient full adder cell based on carbon nanotube technology

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Nano-Micro Letters 2010年第2期2卷 114-120页

作者： keivan navi Rabe'e Sharifi Rad Mohammad Hossein Moaiyeri Amir Momeni Faculty of Electrical and Computer Engineering Shahid Beheshti UniversityGC

Scaling problems and limitations of conventional silicon transistors have led the designers to exploit novel nano-technologies. One of the most promising and feasible nano-technologies is CNT(Carbon Nanotube) based transistors. In this paper, a high-speed and energy-efficient CNFET(Carbon Nanotube Field Effect Transistor) based Full Adder cell is proposed for nanotechnology. This design is simulated in various supply voltages, frequencies and load capacitors using HSPICE circuit simulator. Significant improvement is achieved in terms of speed and PDP(Power-Delay-Product) in comparison with other classical and state-of-the-art CMOS and CNFET-based designs, existing in the literature. The proposed Full Adder can also drive large load capacitance and works properly in low supply voltages.

关键词： CNFET Low-Voltage Full-Adder Minority-Function Nanotechnology

Five New MVL Current Mode Differential Absolute Value Circuits Based on Carbon Nano-tube Field Effect Transistors(CNTFETs)

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Nano-Micro Letters 2010年第4期2卷 227-234页

作者： Mojtaba Jamalizadeh Fazel Sharifi Mohammad Hossein Moaiyeri keivan navi Omid Hashemipour Department of Computer Engineering Science and Research Branch of Islamic Azad University Faculty of Electrical and Computer Engineering Shahid Beheshti University

Carbon Nano-Tube Field Effect Transistors(CNTFETs) are being widely studied as possible successors to silicon *** current mode has many advantages such as performing sum operation by means of a simple wired ***,direction of the current can be used to exhibit the sign of *** is expected that the advantages of current mode approaches will become even more important with increased speed requirements and decreased supply *** this paper,we present five new circuit designs for differential absolute value in current mode logic which have been simulated by CNTFET *** considered base current for this model is 2 μA and supply voltage is 0.9 *** all of our designs we used N-type CNTFET current mirrors which operate as truncated difference *** operation of Differential Absolute Value circuit calculates the difference between two input currents and our circuit designs are operate in 8 logic levels.

关键词： CNTFET Current mode Truncated difference Differential absolute value

Efficient CNTFET-based Ternary Full Adder Cells for Nanoelectronics

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Nano-Micro Letters 2011年第1期3卷 43-50页

作者： Mohammad Hossein Moaiyeri Reza Faghih Mirzaee keivan navi Omid Hashemipour Faculty of Electrical and Computer Engineering Shahid Beheshti University Nanotechnology and Quantum Computing Lab. Shahid Beheshti University

This paper presents two new efficient ternary Full Adder cells for nanoelectronics. These CNTFETbased ternary Full Adders are designed based on the unique characteristics of the CNTFET device, such as the capability of setting the desired threshold voltages by adopting proper diameters for the nanotubes as well as the same carrier mobilities for the N-type and P-type devices. These characteristics of CNTFETs make them very suitable for designing high-performance multiple-Vth structures. The proposed structures reduce the number of the transistors considerably and have very high driving capability. The presented ternary Full Adders are simulated using Synopsys HSPICE with 32 nm CNTFET technology to evaluate their performance and to confirm their correct operation.

关键词： CNTFET Multiple-Valued logic Ternary logic Ternary Full Adder Multiple-Vth design

Design and analysis of carbon nanotube FET based quaternary full adders

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Frontiers of Information Technology & Electronic Engineering 2016年第10期17卷 1056-1066页

作者： Mohammad Hossein MOAIYERI Shima SEDIGHIANI Fazel SHARIFI keivan navi Faculty of Electrical Engineering Shahid Beheshti University Tehran *** Iran Nanotechnology and Quantum Computing Lab Shahid Beheshti University Tehran *** Iran

CMOS binary logic is limited by short channel effects, power density, and interconnection restrictions. The effective solution is non-silicon multiple-valued logic （MVL） computing. This study presents two high-performance quaternary full adder cells based on carbon nanotube field effect transistors （CNTFETs）. The proposed designs use the unique properties of CNTFETs such as achieving a desired threshold voltage by adjusting the carbon nanotube diameters and having the same mobility as p-type and n-type devices. The proposed circuits were simulated under various test conditions using the Synopsys HSPICE simulator with the 32 nm Stanford comprehensive CNTFET model. The proposed designs have on average 32% lower delay, 68% average power, 83% energy consumption, and 77% static power compared to current state-of-the-art quaternary full adders. Simulation results indicated that the proposed designs are robust against process, voltage, and temperature variations, and are noise tolerant.

关键词： Nanoelectronics Carbon nanotube FET Multiple-valued logic Quaternary logic

A New Full-Adder Based on Majority Function and Standard Gates

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通讯和计算机（中英文版） 2010年第5期7卷 1-7页

作者： Mojtabavi Naeini Mahshid navi keivan Sciences and Researches Branch of Islamic Azad University Tehran 11369 Iran Faculty of Electrical and Computer Engineering Shahid Beheshti University GC Tehran 11369 Iran

Task Priority Based Application Mapping Algorithm for 3-D Mesh Network on Chip

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通讯和计算机（中英文版） 2010年第12期7卷 14-20页

作者： Samira Saeidi Ahmad Khademzadeh keivan navi CE Department Islamic Azad University Science ＆ Research Branch Tehran *** Iran Iran Telecom Research Center Tehran *** Iran Faculty of Electrical and Computer Engineering Shahid Beheshti University Tehran *** Iran

High speed residue number system comparison for the moduli set {2^n-1, 2^n, 2^n＋}

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通讯和计算机（中英文版） 2009年第3期6卷 40-46页

作者： Ehsan Gholami Reza Farshidi Mehdi Hosseinzadeh keivan navi Shoushtar Branch Islamic Azad University Shoushtar Iran 2. Dezfid Branch Islamic Azad University Dezfid Iran Science and Research Branch Islamic Azad University. Tehran Iran Department of Electrical and Computer Engineering Shahid Beheshti University Tehran lran

Investigation of Microstructure and Corrosion of TiNbTaZrMo High-Entropy Alloy in the Simulated Body Fluid

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Journal of Bionic Engineering 2021年第1期18卷 118-127页

作者： Arash Shokrgozar navi Shahram Etemadi Haghighi Mohammad Haghpanahi Amir Momeni Deparment of mechanical engineering Science and Research branchIslamic Azad UniversityTehran ***Oran Department of mechanical engineering Iran University of Science and TechnologyTehran 13114-16846Iran Materials Science and Engineering Department Hamedan University of TechnologyHlamedan ***Iran

Microstructures and corrosion of TiNbTaZrMo(Ti_(20)Nb_(20)Ta_(20)Zr_(20)Mo_(20))High-Entropy Alloy(HEA)were investigated in the Simu-lated Body Fluid(SBF).Microstructure of this alloy was investigated by X-Ray Difiraction(XRD)and Scanning Electron Microscopy(SEM)*** observations confirmed the presence of two bcc phases as the major matrix as well as another minor phase in themicrostructure of the *** of some elements,such as tantalum,niobium,and molybdenum in the dendritic branches and thepresence of zirconium and titanium in the inter-dendritic branches were clearly evidenced by Energy Dispersive X-ray(EDX)*** importance of corrosion of implant alloys in the human's body,elctrochemical impedance and cyclic polarization tests werepcerformed on the alloy in *** the corrosion tests,corrosion potential,current,and resistance were obtained as E_(corr)=-0.42 V,i_(corr)=0.34μA·cm^(-2),and R_(p)=27.44 k ohm·cm^(2),*** results revealed that the rate of corrosion in TiNbTaZrMo HEA is about 26 times better than that of Ti_(6)Al_(4)V ***,both alloys had no pitting corrosion in the SBF solution.

关键词： HEA SBF implant material electrochemical impedance test Nyquist polarization test