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A monolithic InP/SOI platform for integrated photonics

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Light(Science & Applications) 2021年第11期10卷 2143-2152页

作者： Zhao Yan Yu Han Liying Lin Ying Xue Chao Ma Wai Kit Ng Kam Sing Wong kei may lau Department of Electronic and Computer Engineering Hong Kong University of Science and TechnologyClear Water BayKowloonHong KongChina Department of Physics and William Mong Institute of Nano Science and Technology Hong Kong University of Science and TechnologyClear Water BayKowloonHong KongChina

The deployment of photonic integrated circuits(PICs)necessitates an integration platform that is scalable,high-throughput,cost-effective,and *** we present a monolithic InP on SOI platform to synergize the advantages of two mainstream photonic integration platforms:Si photonics and InP *** monolithic InP/SOI platform is realized through the selective growth of both InP sub-micron wires and large dimension InP membranes on industry-standard(001)-oriented silicon-on-insulator(SOI)*** epitaxial InP is in-plane,dislocation-free,site-controlled,intimately positioned with the Si device layer,and placed right on top of the buried oxide layer to form“InP-on-insulator”.These attributes allow for the realization of various photonic functionalities using the epitaxial InP,with efficient light interfacing between the III-V devices and the Si-based *** exemplify the potential of this InP/SOI platform for integrated photonics through the demonstration of lasers with different cavity designs including subwavelength wires,square cavities,and *** results here mark a critical step forward towards fully-integrated Si-based PICs.

关键词： SOI monolithic integration

Monolithically integrated high-resolution full-color GaN-on-Si micro-LED microdisplay

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Photonics Research 2023年第1期11卷 109-120页

作者： LONGHENG QI XU ZHANG WING CHEUNG CHONG kei may lau Department of Electronic and Computer Engineering The Hong Kong University of Science and TechnologyHong KongChina

Full-color micro-LED displays are being widely developed and regarded as a primary option in current microdisplay technologies to fulfill the urgent demands of metaverse applications in the next *** this paper,a monolithic full-color micro-LED microdisplay with a resolution of 423 pixels per inch is demonstrated through the integration of a blue GaN-on-Si display module and a quantum dots photoresist(QDs-PR)color conversion *** 400×240 active-matrix blue micro-LED display with a dominant wavelength of 440 nm was monolithically fabricated using GaN-on-Si epiwafers and flip-chip bonded on a custom-designed complementary metal-oxide semiconductor backplane.A color conversion module was independently fabricated on a *** substrate by applying red and green QDs-PR arrays and a color filter array through the standard lithography *** the blue GaN-on-Si micro-LED display module and the lithography-based QDs-PR color conversion module,a full-color micro-LED display was achieved with a wide color gamut up to 104%of the standard red,green,and blue and a maximum brightness of over 500 *** influence of blue light leakage resulting from the possible misalignment of flip-chip bonding and crosstalk in the bottom GaN-on-Si display was investigated in which the percentages of efficient pumping light for the blue,green,and red subpixels are around95%,89%,and 92%,*** prototype demonstrates potential scalability and low-cost volume production of high-resolution full-color micro-LED microdisplays soon.

关键词： lithography pumping complementary

Comparison of growth structures for continuouswave electrically pumped 1.55 μm quantum dash lasers grown on(001) Si

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Photonics Research 2020年第12期8卷 1888-1894页

作者： WEI LUO YING XUE JIE HUANG LIYING LIN BEI SHI kei may lau Department of Electronic and Computer Engineering The Hong Kong University of Science and TechnologyClear Water BayKowloonHong KongChina

Semiconductor lasers directly grown on silicon offer great potential as critical components in high-volume,lowcost integrated silicon photonics *** InAs/InP quantum dash(QDash)lasers on native InP substrate emitting at 1.5μm(C-band)have demonstrated notable performance,the growth of InAs/InP QDash lasers on silicon remains undeveloped because of the 8%lattice mismatch between InP and *** we report advances of growth techniques leading to the first C-band room-temperature continuous-wave electrically pumped QDash lasers on CMOS standard(001)silicon substrates by metalorganic chemical vapor deposition.A correlation between various material characterizations and device performance is analyzed for different QDash laser structures grown on planar nominal(001)*** the optimized QDash growth and improved fabrication process,the lowest threshold current density of 1.5 kA∕cm^(2) was determined on an 8μm×1.5 mmdevice on planar silicon with a single facet output power exceeding 14 *** device results illustrate the good material quality of the QDash lasers grown on silicon,suggesting potential applications for other active components of photonic integrated circuits,such as semiconductor optical amplifiers,modulators,and photodetectors.

关键词： pumped quantum wave

Room temperature Ⅲ–Ⅴ nanolasers with distributed Bragg reflectors epitaxially grown on(001) silicon-on-insulators

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Photonics Research 2019年第9期7卷 1081-1086页

作者： YU HAN WAI KIT NG YING XUE KAM SING WONG kei may lau Department of Electronic and Computer Engineering Hong Kong University of Science and TechnologyClear Water BayKowloonHong KongChina Department of Physics and William Mong Institute of Nano Science and Technology Hong Kong University of Science and TechnologyClear Water BayKowloonHong KongChina

Efficient, scalable, bufferless, and compact Ⅲ–V lasers directly grown on(001)-oriented silicon-on-insulators(SOIs) are preferred light sources in Si-photonics. In this article, we present the design and operation of Ⅲ–V telecom nanolaser arrays with integrated distributed Bragg reflectors(DBRs) epitaxially grown on industry-standard(001) SOI wafers. We simulated the mirror reflectance of different guided modes under various mirror architectures, and accordingly devised nanoscale DBR gratings to support high reflectivity around1500 nm for the doughnut-shaped TE01 mode. Building from InP/InGaAs nanoridges grown on SOI, we fabricated subwavelength DBR mirrors at both ends of the nanoridge laser cavities and thus demonstrated room-temperature low-threshold InP/InGaAs nanolasers with a 0.28 μm^2 cross-section and a 20 μm effective cavity length. The direct growth of these bufferless nanoscale Ⅲ–V light emitters on Si-photonics standard(001) SOI wafers opens future options of fully integrated Si-based nanophotonic integrated circuits in the telecom wavelength regime.

关键词： InGaAs InP SOI nanolasers with distributed Bragg reflectors epitaxially grown on Room temperature silicon-on-insulators Bragg

Low-efficiency-droop InGaN quantum dot light-emitting diodes operating in the “green gap”

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Photonics Research 2020年第5期8卷 750-754页

作者： CHUNYU ZHAO CHAK WAH TANG BILLY LAI GUANGHUI CHENG JIANNONG WANG kei may lau Department of Electronic and Computer Engineering Hong Kong University of Science and TechnologyClear Water BayKowloonHong KongChina Department of Physics Hong Kong University of Science and TechnologyClear Water BayKowloonHong KongChina

Gallium nitride(Ga N)-based light-emitting diodes(LEDs)are important for lighting and display *** this paper,we demonstrate green-emission(512 nm)In Ga N quantum dot(QD)LEDs grown on a c-plane sapphire substrate by metal-organic chemical vapor deposition.A radiative lifetime of 707 ps for the uniform In Ga N self-assembled QDs is obtained by time-resolved photoluminescence measurement at 18 *** screening of the built-in fields in the QDs effectively improves the performance of QD *** high quantum efficiency and high temperature stability green QD LEDs are able to operate with negligible efficiency droop and with current density up to 106 A∕cm^*** results show that In Ga N QDs may be a viable option as the active medium for stable LEDs.

关键词： diodes sapphire quantum

Optical cross-talk reduction in a quantumdot-based full-color micro-light-emitting-diode display by a lithographic-fabricated photoresist mold

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Photonics Research 2017年第5期5卷 411-416页

作者： HUANG-YU LIN CHIN-WEI SHER DAN-HUA HSIEH XIN-YIN CHEN HUANG-MING PHILIP CHEN TENG-MING CHEN kei-may lau CHYONG-HUA CHEN CHIEN-CHUNG LIN HAO-CHUNG KUO Department of Photonics and Institute of Electro-Optical Engineering National Chiao Tung University Department of Applied Chemistry National Chiao Tung University Department of Electric and Computer Engineering Hong Kong University of Science and Technology Institute of Photonic System National Chiao Tung University

In this study, a full-color emission red–green–blue(RGB) quantum-dot(QD)-based micro-light-emitting-diode(micro-LED) array with the reduced optical cross-talk effect by a photoresist mold has been demonstrated. The UV micro-LED array is used as an efficient excitation source for the QDs. The aerosol jet technique provides a narrow linewidth on the micrometer scale for a precise jet of QDs on the micro-LEDs. To reduce the optical cross-talk effect,a simple lithography method and photoresist are used to fabricate the mold, which consists of a window for QD jetting and a blocking wall for cross-talk reduction. The cross-talk effect of the well-confined QDs in the window is confirmed by a fluorescence microscope, which shows clear separation between QD pixels. A distributed Bragg reflector is covered on the micro-LED array and the QDs' jetted mold to further increase the reuse of UV *** enhanced light emission of the QDs is 5%, 32%, and 23% for blue, green, and red QDs, respectively.

关键词： QDs Optical cross-talk reduction in a quantumdot-based full-color micro-light-emitting-diode display by a lithographic-fabricated photoresist mold

Improved AlGaN/GaN HEMTs Grown on Si Substrates Using Stacked AlGaN/AlN Interlayer by MOCVD

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Chinese Physics Letters 2011年第5期28卷 206-209页

作者： WANG Yong YU Nai-Sen LI Ming lau kei-may National Key Lab on High Power Semiconductor Lasers Changchun University of Science and TechnologyChangchun 130022 Photonics Technology Center Department of Electronic and Computer EngineeringHong Kong University of Science and TechnologyClear Water BayKowloonHong KongChina

AlGaN/GaN high electron mobility transistors(HEMTs)are grown on 2-inch Si(111)substrates by *** stacked AlGaN/AlN interlayer with different AlGaN thickness and indium surfactant doped is designed and optimized to relieve the tensile stress during GaN epitaxial *** top 1.0μm GaN buffer layer grown on the optimized AlGaN/AlN interlayer shows a crack-free and shining *** XRD results show that GaN(002)FWHM is 480arcsec and GaN(102)FWHM is *** AGaN/GaN HEMTs with optimized and nonoptimized AlGaN/AlN interlayer are grown and processed for comparison and the dc and rf characteristics are *** the dc characteristics of the device with optimized AlGaN/AlN interlayer,maximum drain current density I_(dss)of 737mA/mm,peak transconductance G_(m)of 185mS/mm,drain leakage current density Ids of 1.7μA/mm,gate leakage current density I_(gs)of 24.8μA/mm and off-state breakdown voltage VBR of 67V are achieved with L_(g)/W_(g)/L_(g)/L_(g)=1/10/1/1μ*** the small signal rf characteristics of the device with optimized AlGaN/AlN interlayer,current gain cutoff frequency fT of 8.3 GHz and power gain cutoff frequency fmax of 19.9GHz are achieved with L_(g)/W_(g)/L_(g)/L_(g)=1/100/1/1μ***,the best rf performance with fT of 14.5 GHz and fmax of 37.3 GHz is achieved with a reduced gate length of 0.7μm.

关键词： AlGaN/GaN Si(111) HEMTs MOCVD

MMIC LNA based novel composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMTs

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Chinese Physics B 2007年第11期16卷 3494-3497页

作者：程知群蔡勇刘杰周玉刚 lau kei may Chen J.Kevin Microelectronics CAD Center Hangzhou Dianzi University Hangzhou 310018China Department of Electrical and Computer Engineering HongKong University of Science and TechnologyHongKongChina

A microwave monolithic integrated circuit （MMIC） C-band low noise amplifier （LNA） using 1 μm-gate composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN high electron mobility transistors （CC-HEMTs） has been designed, fabricated and characterized. The material structure and special channel of CC-HEMT were given and analysed. The MMIC LNA with CC-HEMT showed a noise figure of 2.4 dB, an associated gain of 12.3 dB, an input return loss of -6 dB and an output return loss of -16 dB at 6GHz. The IIP3 of the LNA is 13 dBm at 6 GHz. The LNA with 1 μm ×100 μm device showed very high-dynamic range with decent gain and noise figure.

关键词： slow noise amplifier composite-channel A1GaN/GaN HEMTs linearity

Risk of ischaemic and haemorrhagic stroke in Chinese undergoing percutaneous coronary intervention treated with potent P2Y12 inhibitor versus clopidogrel

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Stroke & Vascular Neurology 2022年第4期7卷 310-318,I0015-I0019页

作者： Andrew kei-Yan Ng Pauline Yeung Ng April Ip Kui Kai lau Chung-Wah Siu Cardiac Medical Unit Grantham HospitalHong KongHong Kong Department of Adult Intensive Care Queen Mary HospitalHong KongHong Kong Department of Medicine The University of Hong KongHong KongHong Kong The State Key Laboratory of Brain and Cognitive Sciences The University of Hong KongHong KongHong Kong

Background Stroke after acute coronary syndrome(ACS)can be *** is uncertain whether the risks of ischaemic stroke or intracranial haemorrhage(ICH)are associated with different choices of P2Y12 inhibitors(potent P2Y12 inhibitors such as ticagrelor and prasugrel vs clopidogrel).Even though East Asians are known to have different thrombotic and haemorrhagic profiles from Caucasians,data on Chinese patients are *** This was a retrospective cohort study conducting in Chinese patients with ACS who underwent first-ever percutaneous coronary intervention from 14 hospitals in Hong Kong between 2010 and *** primary efficacy endpoint was ischaemic *** secondary efficacy endpoint was a composite outcome of thrombotic events including all-cause mortality,non-fatal myocardial infarction and ischaemic *** primary safety endpoint was *** secondary safety endpoint was a composite of major bleeding *** After adjustment of baseline characteristics by 1:1 propensity score matching,a total of 6220 patients(3110 on each group)were *** with clopidogrel,potent P2Y12 inhibitors were associated with a lower risk of ischaemic stroke(HR 0.57;95%CI 0.37 to 0.87;p=0.008)and a lower risk of thrombotic events(HR 0.77;95%CI 0.66 to 0.90;p=0.001).Potent P2Y12 inhibitor was associated with similar risk of ICH(HR 0.65;95%CI 0.34 to 1.25,p=0.20)and major bleeding(HR 0.83;95%CI 0.68 to 1.01,p=0.069).Conclusions Potent P2Y12 inhibitors were associated with a lower adjusted risk of ischaemic stroke and thrombotic events,compared with *** risks of ICH and major bleeding were similar.

关键词： P2Y12 coronary haemorrhagic