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Gastroenterology Report 2015年第2期3卷 162-166页

作者： Cyriac Abby Philips Lovkesh Anand k.n.chandan kumar Vivek kasana Ankur Arora Department of Hepatology Institute of Liver and Biliary SciencesNew DelhiIndia Department of Radiology Institute of Liver and Biliary SciencesNew DelhiIndia

We present a rare case of spontaneous trans-splenic shunt and intra-splenic collaterals in a patient with liver cirrhosis and portal *** shunt and presence of cirrhosis and portal hypertension was incidentally detected by abdominal computed tomographic imaging during evaluation for abdominal *** has been a single report on the presence of trans-splenic shunt in two children with extra-hepatic portal venous obstruction but no cases that report intra-splenic collaterals:to the best of our knowledge,this is the first reported case of spontaneous trans-splenic shunt in the presence of intra-splenic collaterals and incidental multiple splenic artery aneurysms that developed in an adult with compensated cirrhosis and portal hypertension.

关键词： cirrhosis portal hypertension portosystemic shunts collateral pathways splenomegaly

nitrosamines crisis in pharmaceuticals-Insights on toxicological implications,root causes and risk assessment:A systematic review

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Journal of Pharmaceutical Analysis 2024年第5期14卷 639-652页

作者： Hemanth P.R.Vikram Tegginamath Pramod kumar Gunjan kumar narasimha M.Beeraka Rajashree Deka Sheik Mohammed Suhail Sandeep Jat namitha Bannimath Gayatiri Padmanabhan Ravandur S.chandan Pramod kumar Bannimath Gurupadayya Department of Pharmaceutical Chemistry JSS College of Pharmacy MysuruJSS Academy of Higher Education and Research(JSSAHER)Mysuru570015India Xenone Healthcare Pvt.Ltd. New Delhi110076India Department of Pharmaceutics JSS College of Pharmacy MysuruJSS Academy of Higher Education and Research(JSSAHER)Mysuru570015India Department of Human Anatomy I.M.Sechenov First Moscow State Medical University(Sechenov University)Moscow119991Russian Federation Department of Pharmacology Raghavendra Institute of Pharmaceutical Education and Research(RIPER)Ananthapuramu515721India Herman B.Wells Center for Pediatric Research Department of PediatricsIndiana University School of MedicineIndianapolisIN46202USA Animal Physiology and Biochemistry Laboratory Department of ZoologyGauhati UniversityGuwahati781014India Department of Pharmacology JSS College of Pharmacy MysuruJSS Academy of Higher Education and Research(JSSAHER)Mysuru570015India Department of Pharmaceutical Analysis National Institute of Pharmaceutical Education and Research(NIPER)-GuwahatiChangsari781101India Department of Pharmacology University of GalwayGalwayH91 TK33Ireland

The presence of n-nitroso compounds,particularly n-nitrosamines,in pharmaceutical products has raised global safety concerns due to their significant genotoxic and mutagenic *** systematic review investigates their toxicity in active pharmaceutical ingredients(APIs),drug products,and pharmaceutical excipients,along with novel analytical strategies for detection,root cause analysis,reformulation strategies,and regulatory guidelines for *** review emphasizes the molecular toxicity of n-nitroso compounds,focusing on genotoxic,mutagenic,carcinogenic,and other physiological ***,it addresses the ongoing nitrosamine crisis,the development of nitrosamine-free products,and the importance of sensitive detection methods and precise risk *** comprehensive overview will aid molecular biologists,analytical scientists,formulation scientists in research and development sector,and researchers involved in management of nitrosamine-induced toxicity and promoting safer pharmaceutical products.

关键词： Carcinogenicity Genotoxicity Mutagenicity Molecular toxicity nitrosamine impurities nitrosamine drug substance-related impurities

An Autopsy and Histopathology-based Study to Ascertain the Cause of Death of Brought Dead Cases

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Journal of Forensic Science and Medicine 2024年第1期10卷 28-33页

作者： chandan Bandyopadhyay Prabir Chandra Paul Prabhas Chandra Chakraborty Department of Forensic and State Medicine Medical CollegeKolkataWest BengalIndia Department of Pathology Jagannath Gupta Institute of Medical Science and HospitalKolkataWest BengalIndia Department of Forensic Medicine and Toxicology NRS Medical College and HospitalKolkataand M.G.M Medical College and L S.K HospitalKishanganjBiharIndia

Background and Objectives:The cases of apparent natural deaths are encountered in the hospital casualties who are noted dead at the time of the first medical attention and as such are labeled as“Brought Dead.”These include the cases of sudden death,unexplained death,and unattended *** cause of such deaths is reported in the literature to emanate principally from the cardiovascular system,though there are some documented geographical,racial,and other *** the present study,we endeavored to detect the cause of such natural deaths in terms of the disease and the organ system involved,in the deceased individuals of the contemporary Bengali population,with cases due to obvious unnatural causes being *** and Methods:An observational,cross-sectional study with 105(n=105,male:89,female:16)study subjects of age group of 20-80 years,selected by systemic random sampling,from the brought dead subjects coming to the mortuary of the nRS Medical College and Hospital for medicolegal autopsy from April 2011 to March 2012,excluding cases having a history of the obvious unnatural *** system-wise gross examination was done,followed by tissue sampling for histopathological *** case-wise findings were tabulated and analyzed for descriptive statistics using SPSS ***:In the present study,89 cases were male(84.8%)and 16 cases were female(15.2%),which reflects a male:female ratio of 5.56:*** dead bodies are mostly recovered from the footpaths(47 cases,44%).Sixty-four(61%)cases are of known *** 54 cases out of 105(51.4%),morbid pathology is detected in the respiratory system(RS),lobar pneumonia,and cavitary pulmonary tuberculosis being the most frequent disease entity,in both ***-one years-sixty-five years is found to be the most commonly affected age group,in both *** and Conclusions:The present study shows that the most common organ system involved in brought dead cases is the RS,which is s

关键词： Autopsy brought dead cause of death histopathology

Flicker and thermal noise in an n-channel underlap DG FinFET in a weak inversion region

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Journal of Semiconductors 2013年第2期34卷 31-36页

作者： Sudhansu kumar Pati Hemant Pardeshi Godwin Raj n Mohankumar chandan kumar Sarkar nano Device Simulation Laboratory Electronics and Telecommunication Engineering DepartmentJadavpur University SkP College of Engineering TiruvannamalaiTamilnadu-606 611India

We propose an analytical model for drain current and inversion charge in the subthreshold region for an underlap DG FinFET by using the minimum channel potential method, i.e., the virtual source. The flicker and thermal noise spectral density models are also developed using these charge and current models expression. The model is validated with already published experimental results of flicker noise for DG FinFETs. For an ultrathin body, the degradation of effective mobility and variation of the scattering parameter are considered. The effect of device parameters like gate length Lg and underlap length Lun on both flicker and thermal noise spectral densities are also analyzed. Increasing Lg and Lun, increases the effective gate length, which reduces drain current, resulting in decreased flicker and thermal noise density. A decrease of flicker noise is observed for an increase of frequency, which indicates that the device can be used for wide range of frequency applications.

关键词： flicker noise thermal noise ultrathin body virtual source underlap DG FinFET

A 2DEG charge density based drain current model for various Al and In molefraction mobility dependent nano-scale AlInGan/Aln/Gan HEMT devices

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Journal of Semiconductors 2013年第4期34卷 24-29页

作者： Godwin Raj Hemant Pardeshi Sudhansu kumar Pati n Mohankumar chandan kumar Sarkar nano Device Simulation Laboratory Electronics and Telecommunication Engineering DepartmentJadavpur UniversityKolkata-700 032India SkP Engineering College TiruvannamalaiTamilnadu-606 611India

We present a two-dimensional electron gas （2DEG） charge-control mobility variation based drain cur- rent model for sheet carrier density in the channel. The model was developed for the AIInGan/A1n/Gan high- electron-mobility transistor. The sheet carrier density model used here accounts for the independence between the Fermi levels Ef and ns along with mobility for various AI and In molefractions. This physics based ns model fully depends upon the variation of El, u0, the first subband E0, the second subband El, and as. We present a physics based analytical drain current model using ns with the minimum set of parameters. The analytical resuks obtained are compared with the experimental results for four samples with various molefraction and barrier thickness. A good agreement between the results is obtained, thus validating the model.

关键词： 2DEG Fermi level AlInGan

Effect of underlap and gate length on device performance of an AlInn/Gan underlap MOSFET

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Journal of Semiconductors 2012年第12期33卷 16-22页

作者： Hemant Pardeshi Sudhansu kumar Pati Godwin Raj n Mohankumar chandan kumar Sarkar nano Device Simulation Laboratory Electronics and Telecommunication Engineering DepartmentJadavpur University SkP Engineering College

We investigate the performance of an 18 nm gate length AIInn/Gan heterostructure underlap double gate MOSFET, using 2D Sentaurus TCAD simulation. The device uses lattice-matched wideband Al0.83In0.17n and narrowband Gan layers, along with high-k Al2O3 as the gate dielectric. The device has an ultrathin body and is designed according to the ITRS specifications. The simulation is done using the hydrodynamic model and interface traps are also considered. Due to the large two-dimensional electron gas （2DEG） density and high velocity, the maximal drain current density achieved is very high. Extensive device simulation of the major device performance metrics such as drain induced barrier lowering （DIBL）, subthreshold slope （SS）, delay, threshold voltage （Vt）, Ion/Ioff ratio and energy delay product have been done for a wide range of gate and underlap lengths. Encouraging results for delay, Ion, DIBL and energy delay product are obtained. The results indicate that there is a need to optimize theIoff and SS values for specific logic design. The proposed AlInn/Gan heterostructure underlap DG MOSFET shows excellent promise as one of the candidates to substitute currently used MOSFETs for future high speed applications.

关键词： MOS-HEMT underlap heterostructure ultrathin body interface traps effective mass

A new approach to extracting the RF parameters of asymmetric DG MOSFETs with the nQS effect

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Journal of Semiconductors 2013年第11期34卷 31-35页

作者： Sudhansu kumar Pati kalyan koley Arka Dutta n Mohankumar chandan kumar Sarkar nano Device Simulation Laboratory Electronics and Telecommunication Engineering Department Jadavpur University SkP College of Engineering Tiruvannamalai

In analog circuit design an important parameter, from the perspective of superior device performance, is linearity. The DG MOSFET in asymmetric mode operation has been found to present a better linearity. In addi- tion to that it provides, at the discretion of analog circuit designer, an additional degree of freedom, by providing independent bias control for the front and the back gates. Here a non-quasi-static （nQS） small signal model for DGMOSFET with asymmetric gate bias is proposed for extracting the parameters of the device using TCAD sim- ulations. The parameters extracted here for analysis are the intrinsic front and back gate to drain capacitance, Cgal and Cgd2, the intrinsic front and back distributed channel resistance, Rgdl and Rgd2 respectively, the transport de- lay, rm, and the inductance, Lsd. The parameter extraction model for an asymmetric DG MOSFET is validated with pre-established extracted parameter data, for symmetric DG MOSFET devices, from the available literature. The device simulation is performed with respect to frequency up to 100 GHz.

关键词： asymmetric DGMOSFET RF modeling small signal analysis parameter extraction

Geochemical systematics of the Mauranipur-Babina greenstone belt,Bundelkhand Craton,Central India:Insights on neoarchean mantle plume-arc accretion and crustal evolution

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Geoscience Frontiers 2018年第3期9卷 769-788页

作者： S.P.Singh k.S.V.Subramanyam C.Manikyamba M.Santosh M.Rajanikanta Singh B.chandan kumar Department of Geology Institute of Earth SciencesBundelkhand UniversityJhansiU.P284128India CSIR-national Geophysical Research Institute Uppal RoadHyderabad500007India Department of Earth Sciences University of AdelaideAustralia School of Earth Science&Resources China University of GeosciencesBeijingChina Department of Geology Central University of KeralaKasaragodKerala671316India

The neoarchean Bundelkhand greenstone sequences at Mauranipur and Babina areas within the Bundelkhand Gneissic Complex preserve a variety of magmatic rocks such as komatiitic basalts, basalts,felsic volcanic rocks and high-Mg andesites belonging to the Baragaon, Raspahari and koti *** intrusive and extrusive komatiitic basalts are characterized by low SiO_2(39-53 wt.%), high MgO(18-25 wt.%).moderately high Fe_2O_3(7.1-11.6 wt.%), Al_2O_3(4.5-12.0 wt.%), and TiO_2(0.4-1.23 wt.%)with super to subchondritic(Gd/Yb)n ratios indicating garnet control on the melts. The intrusive komatiitic suite of Ti-enriched and Al-depleted type possesses predominant negative Eu and positive nb, Ti and Y anomalies. The chemical composition of basalts classifies them into three types with varying SiO_2, TiO_2, MgO, Fe_2O_3, Al_2O_3 and CaO. At similar SiO_2 content of type Ⅰ and Ⅲ basalts, the type II basalts show slightly high Al_2O_3 and Fe_2O_3 contents. Significant negative anomalies of nb, Zr, Hf and Ti, slightly enriched LREE with relatively flat HREE and low ∑REE contents are observed in type Ⅰ and Ⅱ basalts. TypeⅢ basalts show high Zr/nb ratios(9.8-10.4), TiO_2(1.97-2.04 wt.%), but possess strikingly flat Zr, Hf, Y and Yb and are uncontaminated. Andesites from Agar and koti have high SiO_2(55-64 wt.%), moderate TiO_2(0.4-0.7 wt.%), slightly low Al_2O_3(7-11.9 wt.%), medium to high MgO(3-8 wt.%) and CaO contents(10-17 wt.%). Anomalously high Cr, Co and ni contents are observed in the koti rhyolites. Tholeiitic to calc alkaline affinity of mafic-felsic volcanic rocks and basalt-andesite dacite-rhyolite differentiation indicate a mature arc and thickened crust during the advanced stage of the evolution of neoarchean Bundelkhand greenstone belt in a convergent tectonic setting where the melts were derived from partial melting of thick basaltic crust metamorphosed to amphibolite-eclogite facies. The trace element systematics suggest the presence of arc-back arc association w

关键词： Bundelkhand craton Greenstone belts Mantle dynamics Plume-arc accretion neoarchean crustal evolution

Effects of solubility parameter differences among PEG,PVP and CA on the preparation of ultrafiltration membranes:Impacts of solvents and additives on morphology,permeability and fouling performances

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Chinese Journal of Chemical Engineering 2017年第7期25卷 911-923页

作者： kibrom Alebel Gebru chandan Das Department of Chemical Engineering Indian Institute of Technology Guwahati781039AssamIndia

The effects of two different hydrophilic additives and two solvents on the membrane morphological structure,permeability property and anti-fouling performances of cellulose acetate(CA) ultrafiltration membranes were investigated. During the phase-inversion process, cellulose acetate was selected as a membrane forming polymer; polyethylene glycol(PEG) and polyvinyl pyrrolidone(PVP) were used as additives; acetone(Ac): n,n-Dimethylacetamide(DMAc) and n, n-Dimethylformamide(DMF) were used as solvents; and deionized(DI)water was used in the coagulation bath. All the prepared membranes were characterized in terms of hydraulic permeability(Pm), membrane resistance, average pore radius, and hydrophilicity. The top surface and crosssectional view of the prepared membranes were also observed by using field emission scanning electron microscopy. Membrane fouling and rejection experimentations were done using a stirred batch-cell filtration *** experimental studies of fouling/rinsing cycles, rejection, and permeate fluxes were used to investigate the effect of PEG and PVP additives and effect of the two solvents on the fabricated membranes using bovine serum albumin(BSA) as a model protein.

关键词： Phase inversion Cellulose acetate Solubility parameter Ultrafiltration Additives Solvents

Polarization and Breakdown Analysis of AlGan Channel HEMTs with Aln Buffer

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World Journal of Condensed Matter Physics 2015年第3期5卷 232-243页

作者： Godwin Raj Mohan kumar chandan kumar Sarkar nano Device Simulation Laboratory Electronics and Telecommunication Engineering Department Jadavpur University Kolkata India SkP Engineering College Tiruvannamalai India

We have demonstrated the first carrier density model for AlGan channel with Aln buffer using spontaneous and piezoelectric polarization comparison with experimental and theoretical results. From the results we proved that the formation of 2DEG in undoped structure relied both on spontaneous and piezoelectric polarization. The electron distribution of Al concentration (0 n channel and barrier. Barrier thickness assumed between 20 and 25 nm for validating the experimental results. The carrier concentration was observed at the specific interface of the n- and Ga-face by assuming x1, x2 = 0. The model results are verified with previously reported experimental data.

关键词： AlGan Channel Sheet Carrier Concentration Model n- and Ga-face Polarization High Breakdown Total Induced net Interface Polarization