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Intercalation of Two-dimensional Layered Materials

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Chemical Research in Chinese Universities 2020年第4期36卷 584-596页

作者： ZHOU Xinyun yang juehan ZHONG Mianzeng XIA Qinglin LI Bo DUAN Xidong WEI Zhongming Hunan Key Laboratory of Two-dimensional Materials Department of Applied PhysicsSchool of Plhvsics and ElectronicsHunan UiniversitChangsha 410082.P R.China Hunan Key Laboratory of Two-dimensional Materials and State Key Laboratory for Chemo Biosensing and Chemometrics College of Chemistrv and Chemical Engineering Hunan UniversityChangsha 410082P.R.China State Key Laboratorv of Superlattices and Microstructures Institute of SemiconductorsChinese Academv ofSciences&College ofMaterials Science and Oplo-Electronic Technology Lniversity of Chinese Academv ofSciencesBeijing 100083P R.China School of Physics and Electronics Central South Universiny Changsha 410083P R.China

Two-dimensional(2D)layered materials have attracted great attention due to their unique electrical,optical,thermal and mechanical properties.2D layered materials have miique van der Waals gaps,thus the foreign substance,such as atoms,molecules and ions,can be inserted into the gaps to change the physical and chemical properties of 2D layered materials,which is conducive to realize their multi-fimctional ***,we present a critical review of recent research progress of 2D intercalated materials,including the synthesizing metliods,theoretical calculation,characterization and multifunctional ***,we will summarize llie current challenges and future opportunities in the development of 2D intercalated materials.

关键词： Two-dimensional layered material Intercalation Multi-functional application

Polarization sensitive photodetector based on quasi-1D ZrSe_(3)

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Journal of Semiconductors 2022年第10期43卷 39-49页

作者： Xingang Wang Tao Xiong Kaiyao Xin juehan yang Yueyang Liu Zeping Zhao Jianguo Liu and Zhongming Wei The State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Sino-Danish Center for Education and Research Sino-Danish College University of Chinese Academy of SciencesBeijing 100049China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

The in-plane anisotropy of transition metal trichalcogenides(MX_(3))has a significant impact on the molding of materi-als and MX_(3) is a perfect choice for polarized *** this study,the crystal structure,optical and optoelectronic aniso-tropy of one kind of quasi-one-dimensional(1D)semiconductors,ZrSe_(3),are systematically investigated through experiments and theoretical *** ZrSe_(3)-based photodetector shows impressive wide spectral response from ultraviolet(UV)to near in-frared(NIR)and exhibits great optoelectrical properties with photoresponsivity of 11.9 mA·W^(-1) and detectivity of~106 at 532 ***,the dichroic ratio of ZrSe_(3)-based polarized photodetector is around 1.1 at 808 *** study suggests that ZrSe_(3) has potential in optoelectronic applications and polarization detectors.

关键词： quasi-1D ZrSe_(3) polarization-sensitive

Large unsaturated magnetoresistance of 2D magnetic semiconductor Fe-SnS_(2) homojunction

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Journal of Semiconductors 2022年第9期43卷 53-63页

作者： Jingzhi Fang Huading Song Bo Li Ziqi Zhou juehan yang Benchuan Lin Zhimin Liao Zhongming Wei State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics School of PhysicsPeking UniversityBeijing 100871China Shenzhen Institute for Quantum Science and Engineering Southern University of Science and TechnologyShenzhen 518055China Hunan Key Laboratory of Two-Dimensional Materials Department of Applied PhysicsSchool of Physics and ElectronicsHunan UniversityChangsha 410082China

A magnetic semiconductor whose electronic charge and spin can be regulated together will be an important compon-ent of future spintronic ***,we construct a two-dimensional(2D)Fe doped SnS_(2)(Fe-SnS_(2))homogeneous junction and investigate its electromagnetic transport *** Fe-SnS_(2) homojunction device showed large positive and unsatur-ated magnetoresistance(MR)of 1800%in the parallel magnetic field and 600%in the vertical magnetic field,indicating an obvi-ous anisotropic MR *** contrast,The MR of Fe-SnS_(2) homojunction is much larger than the pure diamagnetic SnS_(2) and most 2D *** application of a gate voltage can regulate the MR effect of Fe-SnS_(2) homojunction ***,the stability of Fe-SnS_(2) in air has great application *** Fe-SnS_(2) homojunction has a significant potential in future mag-netic memory applications.

关键词： magnetic semiconductor homojunction magnetoresistance MR anisotropic

Optical and electronic anisotropy of a 2D semiconductor SiP

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Nano Research 2022年第9期15卷 8579-8586页

作者： Shijun Hou Zhengfeng Guo Tao Xiong Xingang Wang juehan yang Yue-yang Liu Zhi-Chuan Niu Shiyuan Liu Bing Liu Shenqiang Zhai Honggang Gu Zhongming Wei State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100083China State Key Laboratory of Digital Manufacturing Equipment and Technology Huazhong University of Science and TechnologyWuhan 430074China Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Joint Laboratory of Advanced Semiconductor Nanjing Guoke Semiconductor CO.Ltd.Nanjing 210008China

Two-dimensional anisotropic materials have been widely concerned by researchers because of their great application potential in the field of polarized detector devices and optical elements,which is a very important and popular research direction at *** a IV-V two-dimensional material,silicon phosphide(SiP)has obvious in-plane anisotropy and exhibits excellent optical and electrical anisotropy ***,the optical anisotropy of SiP is studied by spectrometric ellipsometry measurements and polarization-resolved optical microscopy,and its electrical anisotropy is tested by SiP-based field-effect *** addition,the normal and anisotropic photoelectric performance of SiP is shown by fabricating a photodetector and measuring *** various measurements,SiP exhibits obvious anisotropy and good photoelectric *** work provides basic optical,electrical,and photoelectric performance information of SiP,and lays a foundation for further study of SiP and applications of SiP-based devices.

关键词： two-dimensional materials SiP optical anisotropy electrical anisotropy photoelectronic properties

Photodetectors based on 2D material/Si heterostructure

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Journal of Semiconductors 2020年第8期41卷 4-5页

作者： Jingshu Zhou juehan yang Zhongming Wei State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China

In recent years,low-dimensional materials especially 2D materials have attracted wide attention due to their novel *** of devices with excellent performance have been made for different applications basing on 2D *** order to further explore the advantages of 2D materials and integrating them into semiconductor fabrication lines,the 2D material/Si heterostructure-based photodetectors played important roles in many different domains due to their price advantage,mature manufacturing craft and good compatibility to integrated circuits.

关键词： materials. integrating compatibility

Longitudinal twinning α-In2Se3 nanowires for UV-visible-NIR photodetectors with high sensitivity

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Frontiers of Optoelectronics 2018年第3期11卷 245-255页

作者： Zidong ZHANG juehan yang Fuhong MEI Guozhen SHEN State Key Laboratory for Superlattices and Microstmctures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education Research Center of Advanced Materials Science and Technology Taiyuan University of Technology Taiyuan 030024 China College of Materials Science and Opto-electronic Technology University of Chinese Academy of Sciences Beijing 100029 China

Longitudinal twinning α-In2Se3 nanowires with the （10T 8） twin plane were synthesized to fabricate high performance single nanowire based photodetectors. As-synthesized a-In2Se3 nanowire exhibited typical n-type semiconducting behavior with an electron mobility of 23.1 cm2-V1. S-1 and a broadband spectral response from 300 to 1100 nm, covering the ultraviolet-visible-near-infrared （UV-visible-NIR） region. Besides, the fabricated device showed a high responsivity of 8.57 × 10^5 A·W^-1, high external quantum efficiency up to 8.8 × 107% and a high detectivity of 1.58 ×10^12 Jones under 600 nm light illumination at a basis of 3 V, which are much higher than previously reported In2Se3 nanostructures due to the interface defect effect of the twin plane. The results indicated that the longitudinal twinning α-In2Se3 nano- wires have immense potential for further applications in highly performance broadband photodetectors and other optoelectronic devices.

关键词： photodetectors nanowires twinning ultravio-let-visible-near-infrared (UV-visible-NIR)

Wide-spectrum polarization-sensitive and fast-response photodetector based on 2D group Ⅳ-Ⅵ semiconductor tin selenide

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Fundamental Research 2022年第6期2卷 985-992页

作者： Yali Yu Tao Xiong Zhengfeng Guo Shijun Hou juehan yang Yue-yang Liu Honggang Gu Zhongming Wei State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronic Engineering University of Chinese Academy of SciencesBeijing 100049China State Key Laboratory of Digital Manufacturing Equipment and Technology Huazhong University of Science and TechnologyWuhan 430074China

Tin selenide(SnSe)has attracted considerable interest recently on account of its low-symmetry lattice structure,great compatibility with key semiconductor technology,and remarkable electrical and optical ***-based polarization-sensitive photodetectors show promising application prospects because of their fast response and excellent photoelectric ***,an in-plane anisotropic SnSe nanosheet was synthesized and reported in detail by applying angle-resolved polarized Raman spectroscopy(ARPRS),polarization-resolved optical microscopy(PROM),angle-resolved optical absorption spectroscopy(AROAS),and other crystal structure characterization ***,SnSe crystals exhibit superior polarization detection performance with a high anisotropic photocurrent ratio(2.31 at 1064 nm)due to the structure formed by the Van der Waals superposition of covalently bonded atomic ***,SnSe-based photodetectors have high responsivity(9.27 A/W),high detectivity(4.08×10^(10)Jones),and fast response(in the order of nanoseconds).These results suggest a new method for fabricating 2D fast-response polarization-sensitive photodetectors in the future.

关键词： Layered SnSe In-plane anisotropy Polarization-sensitive photodetector Fast response Wide spectrum

Polarization-sensitive and wide-spectrum photovoltaic detector based on quasi-1D ZrGeTe_(4)nanoribbon

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InfoMat 2022年第3期4卷 109-120页

作者： Ruixue Bai Tao Xiong Jinshu Zhou Yue-yang Liu Wanfu Shen Chunguang Hu Faguang Yan Kaiyou Wang Dahai Wei Jingbo Li juehan yang Zhongming Wei State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijingChina Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijingChina College of Electronic Information and Optical Engineering Nankai UniversityTianjinChina State Key Laboratory of Precision Measuring Technology and Instruments Tianjin UniversityTianjinChina Institute of Semiconductors South China Normal UniversityGuangzhouChina Guangdong Provincial Key Laboratory of Chip and Integration Technology GuangzhouChina

Low-dimensional semiconductors with in-plane anisotropy and narrow bandgap have been extensively applied to polarized detection in the near-infrared(NIR)***,the narrow bandgap can cause noise owing to the high dark current in *** article reports quasi-1D ZrGeTe_(4)nanoribbonbased photodetectors with low dark current and broadband polarization *** photodetector was fabricated by evaporating 50-nm-thick Au electrodes on a ZrGeTe_(4)*** from the photovoltaic characteristics in the ZrGeTe_(4)nanoribbon and Au electrodes,these photodetectors can operate without bias voltage,with decreased dark current,and improved device ***,the quasi-1D ZrGeTe_(4)nanoribbon-based photodetectors demonstrate a polarization sensitivity in a broadband from visible(VIS)to the NIR region,such as a high photoresponsivity of 625.65 mA W1,large external quantum efficiency of 145.9%at 532 nm,and photocurrent anisotropy ratio of 2.04 at 1064 *** exhibit a novel perpendicular optical reversal of 90in polarization-sensitive photodetection,angle-resolved absorption spectra,and azimuth-dependent reflectance difference microscopy(ADRDM)from VIS to the NIR region,as opposed to other nanoribbon-based polarization-sensitive *** work paves the way for utilizing photovoltaic photodetectors based on low-dimensional materials for broad-spectrum polarized photodetection.

关键词： linear polarization photodetector photovoltaic ZrGeTe_(4)nanoribbon

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基于二维材料异质结的光探测器研究进展

人工晶体学报 2020年第3期49卷 379-397页

作者：杨珏晗魏钟鸣牛智川中国科学院半导体研究所半导体超晶格国家重点实验室北京100083

二维材料异质结因其特有的层状结构和优异的光响应性质,被认为具有应用于新一代光探测器件的潜力。二维材料家族具有丰富的种类,因其能带带隙范围分布广,光电响应可覆盖从紫外到红外的波谱范围。另外二维材料层间通过范德瓦尔斯力相结合... 详细信息

二维材料异质结因其特有的层状结构和优异的光响应性质,被认为具有应用于新一代光探测器件的潜力。二维材料家族具有丰富的种类,因其能带带隙范围分布广,光电响应可覆盖从紫外到红外的波谱范围。另外二维材料层间通过范德瓦尔斯力相结合,因此理论上可以利用不同二维材料层间的范德瓦尔斯力相互作用制备出多种性能优异的二维材料异质结。近年来有多种二维材料异质结通过机械堆叠法及CVD生长法被制备出来,且二维材料异质结光探测器在可见光至远红外波段表现出优异的性质。在这样的研究背景之下,本文从二维材料异质结的制备、器件制备与器件性能等几个方面综述了近年来二维材料异质结光探测器的研究进展。

关键词：二维材料异质结光探测器