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A NOVEL CONTROL CIRCUIT FOR PROXIMITY FOCUSED MICROCHANNEL PLATE IMAGE-INTENSIFIERS

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Journal of Electronics(China) 1985年第2期2卷 141-151页

作者：周旋 institute of semiconductors Academia Sinica

A proximity focused microchannel plate image-intensifier(MCP I~2)can always serve as afast optical shutter due to its high temporal and spatial resolution,large spectral and input intensityrange,high gain as well as the possibility of transient recording of single-shot *** MCP I~2 tube combined with a gating pulse generator constitutes the simplest image-convertercamera with a high light gain and a fast *** this paper,three different modes of gating fora typical 18mm“Generation Ⅱ”MCP I~2 tube(ITT type F4111)are *** the basis ofthe above considerations,a new circuit is developed for fast gating at the photocathode of an image-intensifier and for the generation of large-amplitude nanosecond *** this gating generator,a camera exposure time of about 2 ns has been *** matching of the gating generatorwith the image-intensifier is also discussed.A simple and efficient method is presented to eliminatethe multi-exposure effect which must be avoided in high-speed photography.

关键词： MCP A NOVEL CONTROL CIRCUIT FOR PROXIMITY FOCUSED MICROCHANNEL PLATE IMAGE-INTENSIFIERS mode high very

Band-Inhomogeneity in GaAs Single Crystal Grown in Space

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Journal of semiconductors 1995年第2期16卷 158-160页

作者： Zhou Bojun(institute of semiconductors, The Chinese Academy of Sciences,Beijing 100083) 中科院半导体所北京

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关键词： GaAs Band-Inhomogeneity in GaAs Single Crystal Grown in Space

Effect of As Interstitial Diffusionon on the Properties of Undoped Semi-insulating LECGaAs

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Rare Metals 2001年第3期20卷 187-191页

作者： Ruixia Yang, Fuqiang Zhang, Nuofu Chen 1) Hebei University of Technology, Tianjin 300130, China 2) institute of semiconductors, Chinese Academy of Sciences, Beijing 100083, China 河北工业大学天津 300130 中科院半导体所北京 100083

Annealing was carried out at 950 and 1120 degreesC under various As pressure for undoped (ND) semi-insulating (SI) LECGaAs. The effects of annealing on native defects and electrical properties were investigated. Experimental results indicate that, after an annealing at 950 degreesC for 14 h under low As pressure, the Hall mobility decreases and the resistivity increases dramatically for the samples. These changes in electrical properties are due to the generation of intrinsic acceptor defects, and the generation of the intrinsic acceptor defects originates from the outdiffusion of As interstitial at high temperature. The generation of the intrinsic defects and these changes in electrical properties can be suppressed by increasing the applied As pressure during annealing. The concentration of the main donor defect E12 (AsGaVGa) can be decreased by about one order of magnitude by an evacuated annealing at 1120 degreesC for 2-8 h followed by a fast cooling. The decrease in E12 concentration can also be suppressed by increasing the As pressure during annealing.

关键词： semi-insulating GaAs intrinsic acceptor defects As interstitial indiffusion As pressure annealing

Preparation of I_2 Clusters and Their Absorption Spectra

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Journal of Materials Science & Technology 1997年第6期13卷 518-520页

作者： Zhaojun LIN Zhanguo WANG Wei CHEN and Lanying LIN(Lab. of Sendconductor Materials Science, institute of semiconductors, Chinese Academy of Sciences,Beijing 100083, China) Lab. of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China

Samples have been prepared at different temperatures by loading I2 molecules into the cages of zeolite 5A, and the measurements of the absorption spectra have been carried out for the prepared samples. It is shown that I2 molecular clusters are formed in the cages of zeolite 5A,and it is also found that moIecuIar clusters which are bonded with intermoIecuIar forces have an important feature, namely, the intermolecular distance in molecular clusters can be changed on different preparing conditions and the blue shift of absorption edges can not be as the criterion of forming molecular clusters.

关键词： OO Preparation of I2 Clusters and Their Absorption Spectra nm

Electron-mediated ferromagnetism in Fe-doped InP:Theory and experiment

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Chinese Physics B 2012年第9期21卷 484-488页

作者：董珊朱峰 State Key Laboratory for Superlattices and Microstructures Institute of SemiconductorsChinese Academy of Sciences

We report on the electron-mediated ferromagnetism in Fe-doped InP from both first-principles calculations andexperiments. Theoretically, based on the spin-polarized density functional theory within the Heyd-Scuseria-Ernzerhof （HSE03） approach, we systematically investigate the magnetic properties of Fe-doped InP and predict the existence of electron-mediated ferromagnetism. Experimentally, by diffusing Fe into the n-type InP wafer with thermal annealing at 800 ℃, we observe room-temperature ferromagnetism in InP：Fe, which is in agreement with the theoretical prediction.

关键词： erromagnetism Fe-doped InP first-principles calculations

TWO-DIMENSION NUMERICAL SIMULATION OF SUBMICRON-SCALE GaAs MESFET

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Journal of Electronics(China) 1990年第4期7卷 356-364页

作者：熊思强 institute of semiconductors Chinese Academy of SciencesBeijing

This paper deals with 2-D simulation of GaAs MESFET,which includes velocityovershoot effects by using energy transport model suitable for submicron *** is greatly reduced by simplifying the model and using fast convergence algorithms,*** interaction and ICCG *** program shows good stability and *** types of GaAs MESFET structures,***,ion-implanted and buried P-layer,have been *** results show that buried P-layer can decrease carrier’s injections intosubstrate and improve device *** results are also used to study carefully thevelocity overshoot *** comparison of results of energy transport model and drift-diffusionmodel,the limitation of drift-diffusion-model is derived.

关键词： Semiconductor physics Semiconductor device simulation Numerical analysis

Development of solar-blind AlGaN 128x128 Ultraviolet Focal Plane Arrays

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Science China(Technological Sciences) 2008年第6期51卷 820-826页

作者： YUAN YongGang1, ZHANG Yan1, CHU KaiHui1, LI XiangYang1, ZHAO DeGang2 & YANG Hui2 1 State Key Laboratories of Transducer Technology, Shanghai institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China 2 institute of semiconductors, Chinese Academy of Sciences, Beijing 100083, China State Key Laboratories of Transducer Technology Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai China institute of semiconductors Chinese Academy of Sciences Beijing China

This paper reports the development of solar-blind aluminum gallium nitride (AlGaN) 128×128 UV Focal Plane Arrays (FPAs). The back-illuminated hybrid FPA archi- tecture consists of an 128x128 back-illuminated AlGaN PIN detector array that is bump-mounted to a matching 128x128 silicon CMOS readout integrated circuit (ROIC) chip. The 128×128 p-i-n photodiode arrays with cuton and cutoff wave-lengths of 233 and 258 nm, with a sharp reduction in response to UVB (280―320 nm) light. Several examples of solar-blind images are provided. This solar-blind band FPA has much better application prospect.

关键词： AlGaN photodiode ultraviolet FPA solar-blind

Photoluminescence Properties of Porous Silicon Based on FZ(H) Si Wafer

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Rare Metals 2001年第1期20卷 38-42,57页

作者： Yuejiao He, Huaixiang Li, Chenghua Guo, Guirong Liu, Yansheng Chen, Shuzhen Duan (institute of semiconductors, Shandong Normal University, Jinan 250014, China Metallurgy School, University of Science and Technology Beijing, Beijing 100083, China) 山东师范大学山东济南 250014 北京科技大学北京 100083

The photoluminescence (PL) properties of porous silicon (PS) have been studied based on n-type single-crystal (111) silicon wafers (80-90 Omega .cm in the resistivity). The porous silicon layers (PSL) were created by anodizing the wafers with a denuded zone of 20-40 mum formed by neutron transmutation doping (NTD) and thermal treatment at 940 degreesC for 4 h and then 700 degreesC for 2 h, two-step heating of the floating-zone silicon (FZ Si) grown in a hydrogen (H,) ambience. By surface modification with stannic chloride or amine immersion and rapid thermal oxidation (RTO), the PL peak position from the PS can be qualitatively controlled factitiously. The as-prepared PS shows an orange-yellow luminescence, while the modified samples emit red, green and blue luminescence. Mechanisms for the different colors of the PL are discussed. Fourier transform infrared (FTIR) is carried out to analyze the differences in the structural configuration of the PS samples.

关键词： porous silicon photoluminescence surface modification rapid thermal oxidation

A low-noise fully-differential CMOS preamplifier for neural recording applications

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Science China(Information Sciences) 2012年第2期55卷 441-452页

作者： ZHANG Xu,PEI WeiHua,HUANG BeiJu,GUAN Ning & CHEN HongDa State Key Laboratory on Integrated Optoelectronics,institute of semiconductors,Chinese Academy of Sciences,Beijing 100083,China State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences Beijing China

A fully-differential bandpass CMOS preamplifier for extracellular neural recording is presented in this *** capacitive-coupled and capacitive-feedback topology is *** describe the main noise sources of the proposed preamplifier and discuss the methods for achieving the lowest input-referred *** preamplifier has a midband gain of 43 dB and a DC gain of ***-3 dB upper cut-off frequency of the preamplifier is 6.8 *** lower cut-off frequency can be adjusted for amplifying the field or action potentials located in different *** has an input-referred noise of 3.36 μVrms integrated from 1 Hz to 6.8 kHz for recording the local field potentials(LFPs)and the mixed neural spikes with a power dissipation of 24.75 μW from 3.3 V *** the passband is configured as 100 Hz-6.8 kHz for only recording spikes,the noise is measured to be 3.01 μ*** 0.115 mm2 prototype chip is designed and fabricated in 0.35-μm N-well CMOS(complementary metal oxide semiconductor)2P4M process.

关键词： neural signal amplifier low noise low power subthreshold circuit design noise efficiency factor(NEF)