检索结果-南通市图书馆

Temperature dependence of inas/GaAs quantum dots solar photovoltaic devices

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Journal of Semiconductors 2014年第5期35卷 21-25页

作者： E.Garduno-Nolasco M.Missous d.donoval J.Kovac M.Mikolasek School of Electrical and Electronic Engineering.The University of Manchester Institute of Electronics and Photonics Slovak University of Technology

This paper presents the temperature dependence measurements characterisation of several inas/GaAs quantum dots （Qds） solar cell devices. The devices with cylindrical geometry were fabricated and characterised on-wafer under 20 suns in a temperature range from 300°K to 430°K. The temperature dependence parameters such as open circuit voltage, short circuit density current, fill factor and efficiency are studied in detail. The increase of temperature produces an enhancement of the short circuit current. However, the open circuit voltage is degraded because the temperature increases the recombination phenomena involved, as well as reducing the effective band gap of the semiconductor.

关键词： quantum dots solar cells III-V semiconductors inter-dot doping efficiency temperature depen- dence

Investigation on the inas(1–x)Sbx epilayers growth on GaAs(001)substrate by molecular beam epitaxy

在线全文

学校读者我要写书评

暂无评论

Journal of Semiconductors 2018年第3期39卷 14-18页

作者： d.Benyahia L.Kubiszyn K.Michalczewski A.Keblowski P.Martyniuk J.Piotrowski A.Rogalski Institute of Applied Physics Military University of Technology2 Kaliskiego Str.00-908 WarsawPoland Vigo System S.A. 129/133 Poznaflska Str.05-850 O2ar6w MazowieckiPoland

Undoped and Be-doped inas（1–x）Sbx（0 ≤ x ≤ 0.71） epitaxial layers were successfully grown on lattice mismatched semi-insulating Ga As（001） substrate with 2° offcut towards 〈110〉. The effect of the In As buffer layer on the quality of the grown layers was investigated. Moreover, the influence of Sb/In flux ratio on the Sb fraction was examined. Furthermore, we have studied the defects distribution along the depth of the In As Sb *** addition, the p-type doping of the grown layers was explored. The In As Sb layers were assessed by X-ray diffraction, Nomarski microscopy, high resolution optical microscopy and Hall effect measurement. The In As buffer layer was found to be beneficial for the growth of high quality In As Sb layers. The X-ray analysis revealed a full width at half maximum（FWHM） of 571 arcsec for In As0.87 Sb0.13. It is worth noting here that the Hall concentration（mobility） as low（high） as 5 × 10^（16）cm^（-3）（25000 cm^2 V^（-1）s^（-1）） at room temperature, has been acquired.

关键词： MBE inasSb Hall effect GaAs X-ray diffraction

dynamic performance and reflection sensitivity of quantum dot distributed feedback lasers with large optical mismatch

在线全文

学校读者我要写书评

暂无评论

Photonics Research 2021年第8期9卷 1550-1558页

作者： BOZHANG dONG JIANAN dUAN HEMING HUANG JUSTIN CNORMAN KENICHI NISHI KEIZO TAKEMASA MITSURU SUGAWARA JOHN EBOWERS FRédéRIC GRILLOT LTCI Telecom ParisInstitut Polytechnique de Paris19 Place Marguerite Perey91120 PalaiseauFrance Institute for Energy Efficiency University of CaliforniaSanta BarbaraCalifornia 93106USA Materials department University of CaliforniaSanta BarbaraCalifornia 93106USA Qd Laser Inc.KawasakiKanagawa 210-0855Japan department of Electrical and Computer Engineering University of CaliforniaSanta BarbaraCalifornia 93106USA Center for High Technology Materials University of New-MexicoAlbuquerqueNew Mexico 87106USA Current address:State Key Laboratory on Tunable Laser Technology School of Electronic and Information EngineeringHarbin Institute of TechnologyShenzhen 518055China

This work reports on a high-efficiency In As/Ga As distributed feedback quantum dot *** large optical wavelength detuning at room temperature between the lasing peak and the gain peak causes the static,dynamic,and nonlinear intrinsic properties to all improve with temperature,including the lasing efficiency,the modulation dynamics,the linewidth enhancement factor,and consequently the reflection *** reported show an optimum operating temperature at 75°C,highlighting the potential of the large optical mismatch assisted single-frequency laser for the development of uncooled and isolator-free high-speed photonic integrated circuits.

关键词： mismatch optical tuning

A Study on The Optical Properties of inas Microcrystallites Embedded in SiO2 Glass Matrix

在线全文

学校读者我要写书评

暂无评论

电子显微学报 1997年第4期 145-146页

作者： J.Z.Shi\ L.d.Zhang (Institute of Solid State Physics,Academia Sinica,Hefei 230031,P.R.China)

ＡＳｔｕｄｙｏｎＴｈｅＯｐｔｉｃａｌＰｒｏｐｅｒｔｉｅｓｏｆＩｎＡｓＭｉｃｒｏｃｒｙｓｔａｌｉｔｅｓＥｍｂｅｄｄｅｄｉｎＳｉＯ２ＧｌａｓＭａｔｒｉｘＪ．Ｚ．ＳｈｉＬ．Ｄ．Ｚｈａｎｇ（ＩｎｓｔｉｔｕｔｅｏｆＳｏｌｉｄＳ... 详细信息

ＡＳｔｕｄｙｏｎＴｈｅＯｐｔｉｃａｌＰｒｏｐｅｒｔｉｅｓｏｆＩｎＡｓＭｉｃｒｏｃｒｙｓｔａｌｉｔｅｓＥｍｂｅｄｄｅｄｉｎＳｉＯ２ＧｌａｓＭａｔｒｉｘＪ．Ｚ．ＳｈｉＬ．Ｄ．Ｚｈａｎｇ（ＩｎｓｔｉｔｕｔｅｏｆＳｏｌｉｄＳｔａｔｅＰｈｙｓｉｃｓ，Ａｃａｄｅ...

关键词： inas Microcrystallites Properties SiO2 Embedded

Multistage interband cascade photovoltaic devices with a bandgap of 0.23 eV operating above room temperature

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Chinese Science Bulletin 2014年第10期59卷 950-955页

作者： Hao Ye Hossein Lotfi Lu Li Robert T.Hinkey Rui Q.Yang Lin Lei Joel C.Keay Matthew B.Johnson Tetsuya d.Mishima Michael B.Santos School of Electrical and Computer Engineering University of Oklahoma Norman OK USA Homer L. dodge department of Physics and Astronomy University of Oklahoma Norman OK USA

Interband cascade(IC)photovoltaic(PV)device structures,consisting of multiple discrete inas/GaSb superlattice absorbers sandwiched between electron and hole barriers,were grown by molecular beam *** of the molecular beam epitaxy growth and material characterization of the structures are *** discrete absorber architecture enables certain advantages,such as high open-circuit voltage,high collection efficiency,high operating temperature,and smooth integration of cascade stages with different *** two-and three-stage ICPV devices presented in this article operate at room temperature with substantial open-circuit voltages at a cutoff wavelength of 5.3 lm(corresponding to a bandgap of 0.23 eV),the longest ever reported for room temperature PV *** device characteristics indicate a high level of current matching and demonstrate the advantages of the interband cascade approach in thermophotovoltaic cell design.

关键词： inas GaSb superlattice Thermophotovoltaic Interband cascade devices

Mid-infrared Ⅲ-Ⅴ semiconductor lasers epitaxially grown on Si substrates

在线全文

学校读者我要写书评

暂无评论

Light(Science & Applications) 2022年第7期11卷 1366-1378页

作者： Eric Tournié Laura Monge Bartolome Marta Rio Calvo Zeineb Loghmari daniel A.díaz-Thomas Roland Teissier Alexei N.Baranov Laurent Cerutti Jean-Baptiste Rodriguez IES University of MontpellierCNRS34000 MontpellierFrance

There is currently much activity toward the integration of mid-infrared semiconductor lasers on Si substrates for developing a variety of smart,compact,sensors based on Si-photonics integrated *** review this rapidly-evolving research field,focusing on the epitaxial integration of antimonide lasers,the only technology covering the whole mid-to-far-infrared spectral *** explain how a dedicated molecular-beam epitaxy strategy allows for achieving high-performance GaSb-based diode lasers,inas/AlSb quantum cascade lasers,and inas/GaInSb interband cascade lasers by direct growth on on-axis(001)Si substrates,whereas GaAs-on-Si or GaSb-on-Si layers grown by metal-organic vapor phase epitaxy in large capability epitaxy tools are suitable templates for antimonide laser *** also show that etching the facets of antimonide lasers grown on Si is a viable approach in view of photonic integrated ***,this review shows that while diode lasers are sensitive to residual crystal defects,the quantum cascade and interband cascade lasers grown on Si exhibit performances comparable to those of similar devices grown on their native substrates,due to their particular band structures and radiative recombination *** device lifetimes have been extrapolated for interband cascade ***,routes to be further explored are also presented.

关键词： epitaxial quantum template

Interband cascade technology for energy-efficient mid-infrared free-space communication

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Photonics Research 2023年第4期11卷 582-590页

作者： PIERRE dIdIER HEdWIG KNÖTIG OLIVIER SPITZ LAURENT CERUTTI ANNA LARdSCHNEIdER ELIE AWWAd dANIEL dIAZ-THOMAS ANBARANOV ROBERT WEIH JOHANNES KOETH BENEdIKT SCHWARZ FRÉdÉRIC GRILLOT LTCI Télécom Paris Institut Polytechnique de ParisPalaiseau 91120France mirSense Centre d’intégration NanoInnovPalaiseau 91120France Institute for Solid State Electronics TU Wien1040 ViennaAustria Currently with CREOL College of Optics and PhotonicsUniversity of Central FloridaOrlandoFlorida 32816USA Institut d’Electronique et des Systèmes Universitéde MontpellierCNRS UMR 5214Montpellier 34000France Nanoplus Nanosystems and Technologies GmbH 97218 GerbrunnGermany Center for High Technology Materials University of New MexicoAlbuquerqueNew Mexico 87106USA

Space-to-ground high-speed transmission is of utmost importance for the development of a worldwide broadband ***-infrared wavelengths offer numerous advantages for building such a system,spanning from low atmospheric attenuation to eye-safe operation and resistance to inclement weather *** demonstrate a full interband cascade system for high-speed transmission around a wavelength of 4.18μ*** low-power consumption of both the laser and the detector in combination with a large modulation bandwidth and sufficient output power makes this technology ideal for a free-space optical communication *** proof-of-concept experiment employs a radio-frequency optimized Fabry–Perot interband cascade laser and an interband cascade infrared photodetector based on a type-II inas/GaSb *** bandwidth of the system is evaluated to be around 1.5 *** allows us to achieve data rates of 12 Gbit/s with an on–off keying scheme and 14 Gbit/s with a 4-level pulse amplitude modulation *** quality of the transmission is enhanced by conventional pre-and post-processing in order to be compatible with standard error-code correction.

关键词： communication system free

CHARACTERIZATION OF inas ANd InGaAs ON（110）GaAs BY X-RAY dIFFRACTION ANd TOPOGRAPHY

在线全文

学校读者我要写书评

暂无评论

CHARACTERIZATION OF InAs AND InGaAs ON（110）GaAs BY X-RAY D...

CALCULATION OF PHASE dIAGRAM FOR PSEUdOBINARY GaAs-inas

Sixteenth Congress of the International Union of Crystallography

作者： L.Hart P.F.Fewster X.Zhang d.W.Pashley Philips Reasearch Laboratories RedhillUK Interdisciplinary Research Centre for Semiconductor Materials Imperial CollegeLondonUK department of Materials Imperial CollegeLondonUK.

＜正＞There has recently been interest in semiconductor growth on（110） orientated *** refief in heteroepitaxial layers grown on （110） substrates is affected by the surface geometry since,in the [001]direction the {111} slip planes are inclined to the surface, while in the[1-10]direction,the {111} planes are perpendicular to the *** electron microscopy has shown that strain relief of inas on（110） GaAs is asymmetric,with 60°misfit

关键词：

来源： cnki会议评论

在线全文

cnki会议

学校读者我要写书评

暂无评论

中国有色金属学会会刊：英文版 1994年第4期4卷 25-28页

作者： Qiao, Huan Shen, Jianyun Li,Guoxun(General Research Institute for Nonferrous Metals, Beijing 100088)Chatillon, C(Laboratoire de Thermodynamique et Physico-chimie Metallurgiques ENSEEG,BP75,38402 St.martin d′H eres, France)

ＣＡＬＣＵＬＡＴＩＯＮＯＦＰＨＡＳＥＤＩＡＧＲＡＭＦＯＲＰＳＥＵＤＯＢＩＮＡＲＹＧａＡｓ－ＩｎＡｓ￥Ｑｉａｏ，Ｈｕａｎ；Ｓｈｅｎ，Ｊｉａｎｙｕｎ；Ｌｉ，Ｇｕｏｘｕｎ（ＧｅｎｅｒａｌＲｅｓｅａｒｃｈＩｎｓｔｉｔｕｔｅｆ... 详细信息

ＣＡＬＣＵＬＡＴＩＯＮＯＦＰＨＡＳＥＤＩＡＧＲＡＭＦＯＲＰＳＥＵＤＯＢＩＮＡＲＹＧａＡｓ－ＩｎＡｓ￥Ｑｉａｏ，Ｈｕａｎ；Ｓｈｅｎ，Ｊｉａｎｙｕｎ；Ｌｉ，Ｇｕｏｘｕｎ（ＧｅｎｅｒａｌＲｅｓｅａｒｃｈＩｎｓｔｉｔｕｔｅｆｏｒＮｏｎｆｅｒｒｏｕｓＭｅｔａｌ...

关键词： GaAs-inas Ⅲ-Ⅴ compound calculation of phase diagram miscibility gap