CHARACTERIZATION OF InAs AND InGaAs ON（110）GaAs BY X-RAY DIFFRACTION AND TOPOGRAPHY
作者单位：Philips Reasearch LaboratoriesRedhillUK Interdisciplinary Research Centre for Semiconductor MaterialsImperial CollegeLondonUK Department of MaterialsImperial CollegeLondonUK.
会议名称：《Sixteenth Congress of the International Union of Crystallography》
会议日期：1993年
学科分类：081704[工学-应用化学] 07[理学] 08[工学] 0817[工学-化学工程与技术] 0703[理学-化学] 070301[理学-无机化学]
摘 要：正There has recently been interest in semiconductor growth on（110） orientated *** refief in heteroepitaxial layers grown on （110） substrates is affected by the surface geometry since,in the [001]direction the {111} slip planes are inclined to the surface, while in the[1-10]direction,the {111} planes are perpendicular to the *** electron microscopy has shown that strain relief of InAs on（110） GaAs is asymmetric,with 60°misfit