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Efficient photovoltaic effect in graphene/h-BN/silicon heterostructure self-powered photodetector

Nano Research 2021年第6期14卷 1967-1972页

作者： Ui Yeon Won Boo Heung lee Young Rae Kim Won Tae Kang ilmin lee Ji Eun Kim Young Hee lee Woo Jong Yu Department of Electrical and Computer Engineering Sungkyunkwan UniversitySuwon16419Republic of Korea Center for Integrated Nanostructure Physics Institute for Basic Science(IBS)Suwon16419Republic of Korea

Graphene(Gr)/Si-based optoelectronic devices have attracted a lot of academic attention due to the simpler fabrication processes,low costs,and higher performance of their two-dimensional(2D)/three-dimensional(3D)hybrid interfaces in Schottky junction that promotes electron-hole ***,due to the built-in potential of Gr/Si as a photodetector,the Iph/Idark ratio is often hindered near zero-bias at relatively low illumination *** is a major drawback in self-powered *** this study,we have demonstrated a self-powered van der Waals heterostructure photodetector in the visible range using a Gr/hexagonal boron nitride(h-BN)/Si structure and clarified that the thin h-BN insertion can engineer asymmetric carrier transport and avoid interlayer coupling at the *** dark current was able to be suppressed by inserting an h-BN insulator layer,while maintaining the photocurrent with minimal decrease at near *** a result,the normalized photocurrent-to-dark ratio(NPDR)is improved more than 104 ***,both Iph/Idark ratio and detectivity,increase by more than 104 times at−0.03 V drain *** proposed Gr/h-BN/Si heterostructure is able to contribute to the introduction of next-generation photodetectors and photovoltaic devices based on graphene or silicon.

关键词： graphene hexagonal boron nitride van der Waals heterostructure self-powered Research

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