Efficient photovoltaic effect in graphene/h-BN/silicon heterostructure self-powered photodetector
作者机构：Department of Electrical and Computer EngineeringSungkyunkwan UniversitySuwon16419Republic of Korea Center for Integrated Nanostructure PhysicsInstitute for Basic Science(IBS)Suwon16419Republic of Korea
出 版 物：《Nano Research》 (纳米研究（英文版）)
年 卷 期：2021年第14卷第6期
页 面：1967-1972页
核心收录：
基 金：the National Research Foundation of Korea(NRF)grant funded by the Korea government(MSIT)(No.NRF-2018R1A2B2008069) R&D program of MOTIE/KEIT(No.10064078) Multi-Ministry Collaborative R&D Program through the National Research Foundation of Korea,funded by KNPA,MSIT,MOTIE,ME,and NFA(No.2017M3D9A1073539) This work was supported under the framework of international cooperation program managed by the National Research Foundation of Korea(No.2018K2A9A2A06017491) Y.H.L.acknowledges this work was supported from the Institute for Basic Science(No.IBS-R011-D1)
主 题：graphene hexagonal boron nitride van der Waals heterostructure self-powered Research
摘 要：Graphene(Gr)/Si-based optoelectronic devices have attracted a lot of academic attention due to the simpler fabrication processes,low costs,and higher performance of their two-dimensional(2D)/three-dimensional(3D)hybrid interfaces in Schottky junction that promotes electron-hole ***,due to the built-in potential of Gr/Si as a photodetector,the Iph/Idark ratio is often hindered near zero-bias at relatively low illumination *** is a major drawback in self-powered *** this study,we have demonstrated a self-powered van der Waals heterostructure photodetector in the visible range using a Gr/hexagonal boron nitride(h-BN)/Si structure and clarified that the thin h-BN insertion can engineer asymmetric carrier transport and avoid interlayer coupling at the *** dark current was able to be suppressed by inserting an h-BN insulator layer,while maintaining the photocurrent with minimal decrease at near *** a result,the normalized photocurrent-to-dark ratio(NPDR)is improved more than 104 ***,both Iph/Idark ratio and detectivity,increase by more than 104 times at−0.03 V drain *** proposed Gr/h-BN/Si heterostructure is able to contribute to the introduction of next-generation photodetectors and photovoltaic devices based on graphene or silicon.
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