检索结果-南通市图书馆

Simulation study of device physics and design of GeOI TFET with PNN structure and buried layer for high performance

在线全文

学校读者我要写书评

暂无评论

Chinese Physics B 2020年第10期29卷 473-478页

作者： Bin Wang Sheng hu Yue Feng Peng Li hui-yong hu Bin Shu State Key Discipline Laboratory o f Wide Bandgap Semiconductor Technology School o f MicroelectronicsXidian UniversityXi'an 710071China Xi'an Microelectronic Technology Institute Xi'an 710054China

Large threshold voltage and small on-state current are the main limitations of the normal tunneling field effect transistor (TFET). In this paper, a novel TFET with gate-controlled P+N+N+ structure based on partially depleted GeOI (PD-GeOI) substrate is proposed. With the buried P+-doped layer (BP layer) introduced under P+N+N+ structure, the proposed device behaves as a two-tunneling line device and can be shut off by the BP junction, resulting in a high on-state current and low threshold voltage. Simulation results show that the on-state current density Ion of the proposed TFET can be as large as 3.4 × 10^−4 A/μm, and the average subthreshold swing (SS) is 55 mV/decade. Moreover, both of Ion and SS can be optimized by lengthening channel and buried P+ layer. The off-state current density of TTP TFET is 4.4 × 10^−10 A/μm, and the threshold voltage is 0.13 V, showing better performance than normal germanium-based TFET. Furthermore, the physics and device design of this novel structure are explored in detail.

关键词： Ge-based TFET two line tunneling paths point tunneling on-state current density

Enhancement of off-state characteristics in junctionless field effect transistor using a field plate

在线全文

学校读者我要写书评

暂无评论

Chinese Physics B 2018年第6期27卷 424-428页

作者： Bin Wang He-Ming Zhang hui-yong hu and Xiao-Wei Shi State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology School of Advanced Materials and Nanotechnology Xidian University Xi＇an 710071 China State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology School of Microelectronics Xidian University Xi＇ an 710071 China

In this paper, a novel junctionless field effect transistor（JLFET） is proposed. In the presence of a field plate between gate and drain, the gate-induced drain leakage（GIDL） effect is suppressed due to the decrease of lateral band-to-band tunneling probability. Thus, the off-state current Ioff, which is mainly provided by the GIDL current, is reduced. Sentaurus simulation shows that the Ioffof the new optimized JLFET is reduced by ～ 2 orders and its sub-threshold swing can reach76.8 mV/decade with little influence on its on-state current Ion, so its Ion/Ioff ratio is improved by 2 orders of magnitude compared with that of the normal JLFET. Optimization of device parameters such as Φfps（the work difference between field plate and substrate） and LFP（the length of field plate）, is also discussed in detail.

关键词： lateral band to band tunneling GIDL off-state current field plate

The role of halogen bonding in improving OFET performance of a naphthalenediimide derivative

在线全文

学校读者我要写书评

暂无评论

Chinese Chemical Letters 2018年第3期29卷 423-428页

作者： Jing Li yong-hui hu Cong-Wu Ge He-Gui Gong Xi-Ke Gao Department of Chemistry College of Science Shanghai University Key Laboratory of Synthetic and Self-Assembly Chemistry for Organic Functional Molecules Shanghai Institute of Organic Chemistry Chinese Academy of Sciences

Controlling microstructure and thin film morphology of organic semiconductors by supramolecular arrangement is critical to improving their device performance. To realize well-controlling supramolecular assembly, a core-expanded naphthalene diimides derivative （1） was designed and synthesized as an n-type organic semiconductor and also as a halogen bonding （XB） donor that could form complementary XBs with 2,2-dipyridine or 2,2-bipyrimidine acceptor. The XB interactions in the solid state of 1/2,2- dipyridine and 1/2,2-bipyrimidine were confirmed by a series of characterization methods, such as thermal gravimetric analysis （TGA）, X-ray photoelectron spectroscopy （XPS）, nuclear magnetic resonance （NMR） involving 13F NMR and solid-state 13C NMR. Organic field-effect transistors （OFETs） based on XB complexes 1/2,2-dipyridine or 1/2,2-bipyrimidine showed better device performance than that of devices based on pure 1, with the average electron mobility increased more than doubled （from 0.027cm2V-1 s-1 to 0.070cm2V-1 s-1）.

关键词： Supramolecular assembly Halogen bond Naphthalene diimide Organic semiconductor Organic field-effect transistor

A Positioning System based on Communication Satellites and the Chinese Area Positioning System(CAPS)

在线全文

学校读者我要写书评

暂无评论

Chinese Journal of Astronomy and Astrophysics 2008年第6期8卷 611-630页

作者： Guo-Xiang Ai hu-Li Shi Hai-Tao Wu Yi-hua Yan Yu-Jing Bian yong-hui hu Zhi-Gang Li Ji Guo Xian-De Cai National Astronomical Observatories Chinese Academy of Sciences Beijing 100012 China National Time Service Center Chinese Academy of Sciences Lintong 710600 China

The Chinese Area Positioning System （CAPS） is a positioning system based on satellite communication that is fundamentally different from the 3＂G＂（GPS, GLONASS and GALILEO） systems. The latter use special-purpose navigation satellites to broadcast navigation information generated on-board to users, while the CAPS transfers ground-generated navigation information to users via the communication satellite. In order to achieve accurate Positioning, Velocity and Time （PVT）, the CAPS employs the following strategies to over- come the three main obstacles caused by using the communication satellite：（a） by real-time following-up frequency stabilization to achieve stable frequency; （b） by using a single carrier in the transponder with 36 MHz band-width to gain sufficient power; （c） by incorporating Decommissioned Geostationary Orbit communication satellite （DGEO）, barometric pressure and Inclined Geostationary Orbit communication satellite （IGSO） to achieve the 3-D posi- tioning. Furthermore, the abundant transponders available on DGEO can be used to realize the large capacity of communication as well as the integrated navigation and communication. With the communication functions incorporated, five new functions appear in the CAPS：（1） combination of navigation and communication; （2） combination of navigation and high accu- racy orbit measurement; （3） combination of navigation message and wide/local area differen- tial processing; （4） combination of the switching of satellites, frequencies and codes; and （5） combination of the navigation message and the barometric altimetry. The CAPS is thereby labelled a PVT5C system of high accuracy. In order to validate the working principle and the performance of the CAPS, a trial system was established in the course of two years at a cost of about 20 million dollars. The trial constellation consists of two GEO satellites located at E87.5° and E110.5°, two DGEOs located at E130° and E142°, as well as barometric altimetry as a virtual s

关键词： astronomy application satellite navigation satellite communication astrometry astronomic technique

Device physics and design of FD-SOI JLFET with step-gate-oxide structure to suppress GIDL effect

在线全文

学校读者我要写书评

暂无评论

Chinese Physics B 2021年第4期30卷 497-501页

作者： Bin Wang Xin-Long Shi Yun-Feng Zhang Yi Chen hui-yong hu Li-Ming Wang State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology School of MicroelectronicsXidian UniversityXi'an 710071China Mailbox 150 BaoJi 721000China

A novel n-type junctionless field-effect transistor(JLFET) with a step-gate-oxide(SGO) structure is proposed to suppress the gate-induced drain leakage(GIDL) effect and off-state current I_(off).Introducing a 6-nm-thick tunnel-gateoxide and maintaining 3-nm-thick control-gate-oxide,lateral band-to-band tunneling(L-BTBT) width is enlarged and its tunneling probability is reduced at the channel-drain surface,leading the off-state current I_(off) to decrease ***,the thicker tunnel-gate-oxide can reduce the influence on the total gate capacitance of JLFET,which could alleviate the capacitive load of the transistor in the circuit *** simulation shows that I_(off) of the new optimized JLFET reduced significantly with little impaction on its on-state current Ion and threshold voltage V_(TH) becoming less,thus showing an improved I_(on)/I_(off) ratio(5×10^(4)) and subthreshold swing(84 mV/dec),compared with the scenario of the normal *** influence of the thickness and length of SGO structure on the performance of JLFET are discussed in detail,which could provide useful instruction for the device design.

关键词： junctionless field-effect transistor(FET) gate-induced drain leakage(GIDL) step-gate-oxide offstate current

Hierarchical control for parallel bidirectional power converters of a grid-connected DC mlcrogrnd

在线全文

学校读者我要写书评

暂无评论

Frontiers of Information Technology & Electronic Engineering 2017年第12期18卷 2046-2057页

作者： hui-yong hut yong-gang PENG Yang-hong XIA Xiao-ming WANG Wei WEI Miao YU College of Electrical Engineering Zhejiang University Hangzhou 310027 China

The DC microgrid is connected to the AC utility by parallel bidirectional power converters （BPCs） to import/export large power, whose control directly affects the performance of the grid-connected DC microgrid. Much work has focused on the hierarchical control of the DC, AC, and hybrid microgrids, but little has considered the hierarchical control of multiple parallel BPCs that directly connect the DC microgrid to the AC utility. In this paper, we propose a hierarchical control for parallel BPCs of a grid-connected DC mierogrid. To suppress the potential zero-sequence circulating cm-cent in the AC side among the parallel BPCs and realize feedback linearization of the voltage control, a d-q-O control scheme instead of a conventional d-q control scheme is proposed in the inner current loop, and the square of the DC voltage is adopted in the inner voltage loop. DC side droop control is applied to realize DC current sharing among multiple BPCs at the primary control level, and this induces DC bus voltage deviation. The quantified relationship between the current sharing error and DC voltage deviation is derived, indicating that there is a trade-off between the DC voltage deviation and current sharing error. To eliminate the current sharing error and DC voltage deviation simultaneously, slope-adjusting and voltage-shifting approaches are adopted at the secondary control level. The pro- posed tertiary control realizes precise active and reactive power exchange through parallel BPCs for economical operation. The proposed hierarchical control is applied for parallel BPCs of a grid-connected DC microgrid and can operate coordinately with the control for controllable/uncontrollable distributional generation. The effectiveness of the proposed control method is verified by corresponding simulation tests based on Matlab/Simulink, and the performance of the hierarchical control is evaluated for prac- tical applications.

关键词： Parallel bidirectional power converters Hierarchical control DC microgrid

Analytical threshold voltage model for strained silicon GAA-TFET

在线全文

学校读者我要写书评

暂无评论

Chinese Physics B 2016年第11期25卷 640-644页

作者：康海燕胡辉勇王斌 Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices School of Microelectronics Xidian University

Tunnel field effect transistors（TFETs） are promising devices for low power *** analytical threshold voltage model,based on the channel surface potential and electric field obtained by solving the 2D Poisson＇s equation,for strained silicon gate all around TFETs is *** variation of the threshold voltage with device parameters,such as the strain（Ge mole fraction x）,gate oxide thickness,gate oxide permittivity,and channel length has also been *** threshold voltage model is extracted using the peak transconductance method and is verified by good agreement with the results obtained from the TCAD simulation.

关键词： strained TCAD drain permittivity verified junction Poisson length capacitance dielectric

Structural designs and mechanism insights into electrocatalytic oxidation of 5-hydroxymethylfurfural

在线全文

学校读者我要写书评

暂无评论

Journal of Energy Chemistry 2025年第1期100卷 792-814页

作者： Jing Lei huijie Zhang Jian Yang Jia Ran Jiqiang Ning Haiyan Wang yong hu Key Laboratory of the Ministry of Education for Advanced Catalysis Materials Department of ChemistryZhejiang Normal UniversityJinhua 321004ZhejiangChina Jinhua Advanced Research Institute Jinhua 321019ZhejiangChina Department of Optical Science and Engineering Fudan UniversityShanghai 200438China College of Chemistry and Materials Engineering Zhejiang A&F UniversityHangzhou 311300ZhejiangChina

Biomass conversion offers an efficient approach to alleviate the energy and environmental *** oxidation of 5-hydroxymethylfurfural(HMF)has attracted tremendous attention in the latest few years for the mild synthesis conditions and high conversion efficiency to obtain 2,5-furan dicarboxylic acid(FDCA),but there still remain problems such as limited yield,short cycle life,and ambiguous reaction *** many reviews highlighting a variety of electrocatalysts for electrochemical oxidation of HMF,a detailed discussion of the structural modulation of catalyst and the underlying catalytic mechanism is still *** herein provide a comprehensive summary of the recent development of electrochemical oxidation of HMF to FDCA,particularly focusing on the mechanism studies as well as the advanced strategies developed to regulate the structure and optimize the performance of the electrocatalysts,including heterointerface construction,defect engineering,single-atom engineering,and in situ *** characterization techniques and theoretical calculation methods for mechanism and active site studies are elaborated,and challenges and future directions of electrochemical oxidation of HMF are also *** review will provide guidance for designing advanced catalysts and deepening the understanding of the reaction mechanism beneath electrochemical oxidation of HMF to FDCA.

关键词： Electrochemical oxidation of 5- hydroxymethylfurfural 2,5-Furan dicarboxylic acid Structural design Mechanism Electrocatalysts

Unraveling brain aging through the lens of oral microbiota

在线全文

学校读者我要写书评

暂无评论

Neural Regeneration Research 2025年第7期20卷 1930-1943页

作者： Qinchao hu Si Wang Weiqi Zhang Jing Qu Guang-hui Liu State Key Laboratory of Membrane Biology Institute of ZoologyChinese Academy of SciencesBeijingChina Hospital of Stomatology Guanghua School of StomatologyGuangdong Provincial Key Laboratory of StomatologySun Yat-sen UniversityGuangzhouGuangdong ProvinceChina Advanced Innovation Center for human Brain Protection and National Clinical Research Center for Geriatric Disorders Xuanwu HospitalCapital Medical UniversityBeijingChina Aging Translational Medicine Center International Center for Aging and CancerBeijing Municipal Geriatric Medical Research CenterXuanwu HospitalCapital Medical UniversityBeijingChina CAS Key Laboratory of Genomic and Precision Medicine Beijing Institute of GenomicsChinese Academy of Sciences and China National Center for BioinformationBeijingChina University of Chinese Academy of Sciences BeijingChina Institute for Stem Cell and Regeneration Chinese Academy of SciencesBeijingChina Aging Biomarker Consortium BeijingChina State Key Laboratory of Stem Cell and Reproductive Biology Institute of ZoologyChinese Academy of SciencesBeijingChina Beijing Institute for Stem Cell and Regenerative Medicine BeijingChina

The oral cavity is a complex physiological community encompassing a wide range of *** of oral microbiota can lead to various oral infectious diseases,such as periodontitis and tooth decay,and even affect systemic health,including brain aging and neurodegenerative *** studies have highlighted how oral microbes might be involved in brain aging and neurodegeneration,indicating potential avenues for intervention *** this review,we summarize clinical evidence demonstrating a link between oral microbes/oral infectious diseases and brain aging/neurodegenerative diseases,and dissect potential mechanisms by which oral microbes contribute to brain aging and *** also highlight advances in therapeutic development grounded in the realm of oral microbes,with the goal of advancing brain health and promoting healthy aging.

关键词： Alzheimer's disease brain aging multiple sclerosis neurodegeneration neurodegenerative diseases oral microbiota Parkinson's disease periodontitis bacteria Porphyromonas gingivalis