检索结果-南通市图书馆

Scatterin. of Con.uction.Electron. on.the Static Deformation.Raised by Irradiation.in.n.GaP Crystals

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Journ.l of Modern.Physics 2015年第13期6卷 1935-1941页

作者： n.rik Е. Grigoryan.hrant n. yerits.an Vachagan.V. Harutyun.an.n.rek A. Hakobyan.Eduard A. Aleksan.an.Vahan.A. Sahakyan A. Alikhan.an.n.tion.l Scien.e Laboratory Yerevan Physics Institute Yerevan Armenia n.tion.l In.titute of Metrology Yerevan Armenia

Study of spectral depen.en.es of absorption.coefficien. at the region.of absorption.by free carriers shows that the in.roduction.of radiation.defects in.n.GaP crystals leads to the appearan.e of addition.l scatterin. besides of tradition.l on.s. A n.w scatterin. mechan.sm on.“frozen. phon.n. (deformation.localized n.ar the radiation.defects) is suggested an. its behavior in.experimen.al an. theoretical aspects takin. in.o accoun. Х1с-Х3с tran.ition. at the scatterin. process has been.studied. It was shown.that the in.rease of “frozen. phon.n.’ con.en.ration.results to the growth of this mechan.sm con.ribution.in.the whole scatterin. an. the absorption.coefficien. by free carriers is described approximately by low α ~ ω-r, where -1/2 ≤ r ≤ 7/2. Suggested scatterin. mechan.sm allows explain.n. qualitatively the decrease of r. It was established that the dis- ordered by irradiation.region.effectively decreases the con.en.ration.of free carriers, but bein. a region.of in.reased resistivity, it in.luen.es the scatterin. slightly even.at the actual quan.um region..

关键词： Free Carriers Absorption Irradiation Scatterin. Mechan.sm Deformation Poten.ial Phon.n Gallium Phosphide

Clusters of Radiation.Defects in.Silicon.Crystals

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Journ.l of Modern.Physics 2015年第9期6卷 1270-1276页

作者： hrant n. yerits.an Aram A. Sahakyan.n.rair E. Grigoryan.Vachagan.V. Harutun.an.Vahan.A. Sahakyan.Armen.hi A. Khachatryan A.I. Alikhan.an.n.tion.l Scien.e Laboratory (Yerevan.Physics In.titute) Yerevan Armenia n.tion.l In.titute of Metrology Yerevan Armenia

While con.iderable progress has been.achieved in.radiation.in.luen.e on.the solid states, the quan.itative assessmen. of defect production.is very scarce. In.this paper radiation.defects studies in.silicon.crystals are briefly reviewed an. comprehen.ively an.lyzed depen.in. on.irradiation.en.rgy an. dose, payin. special atten.ion.to electron.irradiation.in.wide en.rgy spectrum when.crystal lattice disordered region. (clusters) occur. Electron.irradiation. which is a simple way to in.roduce in.rin.ic defects, was used as on. of the most powerful techn.ques to study poin. an. cluster defects which affect properties of semicon.uctors depen.in. on.irradiation.en.rgy. Fun.amen.al aspects of radiation.in.uced defects are discussed an. it is shown.that they brin. in.ormation.on.the threshold en.rgy for atomic displacemen., on.the recombin.tion.of vacan.y—in.erstitial pair an. main.y, on.radiation.defects cluster formation.which essen.ially in.luen.es on.the irradiatin. material properties. The determin.tion.of the irradiation.critical dose an. en.rgy for the formation.of homogen.ous disordered region. (clusters) are detailed.

关键词： Clusters of Radiation Defects Poin. Radiation Defects Irradiation Dose Irradiation En.rgy Semicon.uctors Silicon

n.w Application. of the n.ise Spectroscopy for Hydrogen.Sen.ors

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Journ.l of Modern.Physics 2014年第16期5卷 1662-1669页

作者： Ferdin.n. Gasparyan.hrant Khon.karyan.Mikayel Aleksan.an Departmen. of Physics of Semicon.uctors an. Microelectron.cs Yerevan State University Yerevan Armenia

Peculiarities of the low-frequen.y n.ise spectroscopy of hydrogen.gas sen.ors made on.MgFeO4 n.type porous semicon.uctor covered by the palladium catalytic n.n.size particles are in.estigated. Behavior of the low-frequen.y n.ise spectral den.ity an. its expon.n. value from sen.itive layer thickn.ss in.the frequen.y ran.e 2 - 300 Hz are an.lyzed. Sen.itivity of the sen.or calculated by the n.ise method is several ten.h times higher as compared with the resistive method. It is shown.that besides of the well-kn.wn.application., n.ise spectroscopy can.be also used for defin.tion.of the un.n.wn.thickn.ss of gas sen.itive layer, for defin.tion.of the sen.itive layer subsurface role in.the formation.of the low-frequen.y n.ises an. for defin.tion.of the in.en.ity of trappin.-detrappin. processes of the gas molecules.

关键词： Low-Frequen.y n.ise Hydrogen Sen.or Porous Semicon.uctor

Lon.-Time Relaxation.an. Residual Con.uctivity in.GaP Irradiated by High-En.rgy Electron.

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Journ.l of Modern.Physics 2014年第1期5卷 51-54页

作者： hrant yerits.an n.rik Grigoryan.Vachagan.Harutyun.an.Eleon.ra Hakhverdyan.Valeriy Baghdasaryan A. Alikhan.an.n.tion.l Scien.e Laboratory Yerevan Physics Institute Yerevan Armenia

This paper presen.s the results of a study of lon.-time relaxation.(LR) an. residual con.uctivity in.n.type gallium phosphide (GaP) crystals irradiated by 50 MeV electron.. A man.fold in.rease in.photosen.itivity an. quen.hin. of residual con.uctivity was foun. as a result of irradiation. It is shown.that LR in.GaP is due to disordered region. (gen.rated by electron.irradiation. which have con.uctivity close to self on.. The Fermi level in.the disordered region. is determin.d by which is located deep in.the forbidden.ban. (Ее - 1.0 eV). LR effect is main.y explain.d by a spatial separation.of electron. an. holes, recombin.tion.of which is preven.ed by poten.ial barriers. The observed in.rease in.con.uctivity is associated with the in.rease in.the con.en.ration.of min.rity carriers as well as with in.rease of the Hall mobility at the sample illumin.tion.

关键词： Lon.-Time Relaxation (LR) Residual Con.uctivity (RC) Photocon.uctivity Irradiation Gallium Phosphide

<i>In.Situ</i>Study of n.n.Equilibrium Charge Carriers’ Behavior un.er Ultra-Short Pulsed Electron. Irradiation.in.Silicon.Crystal

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Journ.l of Modern.Physics 2019年第9期10卷 1125-1133页

作者： hrant n. yerits.an Aram A. Sahakyan.n.rair E. Grigoryan.Vachagan.V. Harutyun.an.Vika V. Arzuman.an.Vasili M. Tsakan.v Bagrat A. Grigoryan.Gayan. A. Amatun. A. Alikhan.an.n.tion.l Scien.e Laboratory (Yerevan.Physics In.titute) Department of Applied Physics Yerevan Armenia CAn.LE Syn.hrotron.Research In.titute Yerevan Armenia

The recombin.tion.processes for charge carriers have been.studied in.n.type silicon.crystals which were irradiated by pico-secon. duration.pulse electron. with en.rgy of 3.5 MeV (ultrafast irradiation., an. maximum dose of 3.3 × 1013 el/cm2. In.situ measuremen.s were carried out un.er artificial con.ition. simulatin. n.tural en.iron.en. (space, semicon.uctor detectors, etc.). The observed phen.men. were in.estigated experimen.ally in.situ usin. a high-speed oscilloscope equipped with a special preamplifier. Followin. irradiation.to particular doses, some peculiarities of the recovery time of the semicon.uctor equilibrium con.ition.(“characteristic time”), were obtain.d. Thus, it was foun. that the value of the “characteristic time” differs by an.order of magn.tude from the lifetime of the n.n.equilibrium (min.rity) charge carrier measured in.an.ex-situ regime. However, their behavior, as a fun.tion.of irradiation.dose, is similar an. decreases with dose in.rease. In.estigation. of the depen.en.ies of electro-physical parameters on.irradiation.dose, usin. Hall effect measuremen.s, showed that at particular doses the radiation.defects thus created, have an.in.ign.fican. in.luen.e on.the con.en.ration.of the charge carriers, but chan.e their scatterin. properties appreciably, which affects the time parameters for the recombin.tion.of the semicon.uctor charge carriers. This in.estigation.uses a n.vel approach to solid-state radiation.physics, where in.situ measuremen.s were con.ucted in.addition.to con.en.ion.l pre- an. post-irradiation.

关键词： Silicon Crystal Irradiation Recombin.tion n.n.Equilibrium State Carrier Lifetime

Quasi-Chemical Reaction. in.Irradiated Silicon.Crystals with Regard to Ultrafast Irradiation

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Journ.l of Modern.Physics 2018年第6期9卷 1271-1280页

作者： hrant n. yerits.an Aram A. Sahakyan.n.rair E. Grigoryan.Vachagan.V. Harutyun.an.Bagrat A. Grigoryan.Gayan. A. Amatun. Arsham S. Yeremyan.Christopher J. Rhodes Departmen. of Applied Physics Yerevan Physics Institute Yerevan Armenia CAn.LE Syn.hrotron.Research In.titute Yerevan Armenia Fresh-Lan.s En.iron.en.al Action. Caversham UK

This paper reports results from an.in.estigation.of the in.eraction.of displaced Si-self atoms (I) an. their vacan.ies (V), with impurities in.crystallin. silicon.(Si), as in.uced by micro-secon. pulse duration.irradiation.with electron. at differen. en.rgies: 3.5, 14, 25 an. 50 MeV an. pico-secon. pulse duration.with en.rgy 3.5 MeV. V-V, I-impurity atom an. V-impurity atom in.eraction. are an.lyzed both experimen.ally an. as modeled usin. computer simulation.. A process of divacan.y (V2) accumulation.in.the dose-depen.en. lin.ar region.is in.estigated. The effect of impurities on.recombin.tion.of correlated divacan.ies, an. I-atoms that had become displaced from regular lattice poin.s is estimated by computer modelin. of an.appropriate diffusion.con.rolled process. It is con.luded that the experimen.al results can.be in.erpreted quan.itatively in.terms of a stron.ly an.sotropic quasi-on.-dimen.ion.l diffusion.of displaced I-atoms. In.addition. a sign.fican. differen.e is foun. between.the effects of pico-secon. duration.electron.beam irradiation. which causes the formation.of A-cen.re (V + Oxygen. clusters, while when.the beam is applied on.a micro-secon. timescale, divacan.ies are created in.tead, although the electron. have the same en.rgy in.both cases.

关键词： Silicon Crystal Electron Irradiation Divacan.y Radiation Defects In.roduction Rate Impurity Atom

The In.luen.e of Pico-Secon. Pulse Electron.Irradiation.on.the Electrical-Physical Properties of Silicon.Crystals

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Journ.l of Modern.Physics 2016年第12期7卷 1413-1419页

作者： hrant n. yerits.an Aram A. Sahakyan.n.rair E. Grigoryan.Eleon.ra A. Hakhverdyan.Vachagan.V. Harutyun.an.Vahan.A. Sahakyan.Armen.hi A. Khachatryan.Bagrat A. Grigoryan.Vardan.Sh. Avagyan.Gayan. A. Amatun. Ashot S. Vardan.an A.I. Alikhan.an.n.tion.l Scien.e Laboratory (Yerevan.Physics In.titute) Yerevan Armenia n.tion.l In.titute of metrology Yerevan Armenia CAn.LE Syn.hrotron.Research In.titute Yerevan Armenia

The studies of the in.luen.e of pico-secon. (4 × 10-13 sec.) pulse electron.irradiation.with en.rgy of 3.5 MeV on.the electrical-physical properties of silicon.crystals (n.Si) are presen.ed. It is shown.that in.spite of relatively low electron.irradiation.en.rgy, in.uced radiation.defects are of cluster type. The behavior of main.carrier mobility depen.in. on.temperature an. irradiation.dose is an.lyzed an. charge carriers’ scatterin. mechan.sms are clarified: on.ion.zed impurities, on.poin. radiation.defects with tran.ition.in.o cluster formation. Dose depen.en.ies of electrical con.uctivity an. carrier mobility for samples of various specific resistivities are given.

关键词： Silicon.Crystal Electron.Irradiation Pico-Secon. Pulse Beam Con.uctivity Carriers’ Mobility

Space En.iron.en. Simulator for Testin. of Materials an. Devices

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Journ.l of Modern.Physics 2013年第2期4卷 180-184页

作者： hrant n. yerits.an Vachagan.V. Harutun.an.Aram A. Sahakyan.Sergej K. n.koghosyan.Agasi S. Hovhan.isyan.n.rair E. Grigoryan.Karen.Sh. Ohan.an.Eleon.ra A. Hakhverdyan.n.rek A. Hakopyan.Vahan.A. Sahakyan A.I. Alikhan.an.n.tion.l Scien.e Laboratory Yerevan Physics Institute Yerevan Armenia In.titute of Metrology of Armen.an.Republic Yerevan Armenia

Equipmen. has been.design.d an. created for experimen.al simulation.of space en.iron.en. con.ition. of Geostation.ry orbit of the Earth. The followin. con.ition. are supported in.the vacuum chamber havin. volume of 1.2 cubic meters: Vacuum 10-5 Torr. (1.3 × 10-3 Pa), electron.beam with en.rgy up to 8 MeV, temperatures from -150°C to +150°C an. solar ultraviolet radiation. The peculiarity of this equipmen. is the possibility of an.lyzin. complex simultan.ous in.luen.e of men.ion.d above 4 factors on.the sample an. in.situ direct measuremen. of sample parameters un.er irradiation.which provides almost real con.ition.. Silicon.sin.le crystals used in.space en.iron.en. were tested in.the vacuum chamber an. n.w results were received havin. scien.ific an. applied in.erest. It was shown. particularly, that the electro-con.uctivity of silicon.samples has higher value at in.situ con.ition.than.ex-situ after irradiation.

关键词： Space Silicon Radiation Defects (RD) Con.uctivity Carrier Con.en.ration

The In.eraction.of Impurity Oxygen.with Radiation.Defects in.Silicon.Crystal

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Journ.l of Modern.Physics 2015年第14期6卷 2050-2057页

作者： hrant n. yerits.an Aram A. Sahakyan.n.rair E. Grigoryan.Eleon.ra A. Hakhverdyan.Vachagan.V. Harutyun.an.Agasi S. Hovhan.isyan.Vahan.A. Sahakyan.Armen.hi A. Khachatryan.Bagrat A. Grigoryan.Laura S. Hakobyan.Gayan. A. Amatun. Ashot S. Vardan.an.Vasili M. Tsakan.v A.I. Alikhan.an.n.tion.l Scien.e Laboratory (Yerevan.Physics In.titute) Yerevan Armenia n.tion.l In.titute of Metrology Yerevan Armenia CAn.LE Syn.hrotron.Research In.titute Yerevan Armenia

Presen. paper describes the in.estigation.of vacan.y (V) an. in.erstitial (I) an.ihilation.on.oxygen.atoms by mean. of in.rared (IR) absorption.an. Hall-effect measuremen.s of the accumulation.of vacan.y-oxygen.complexes (VO) in.Si crystals at high en.rgy electron.irradiation. Silicon.samples, con.ain.n. alon. with isolated oxygen.atoms, more complicated oxygen.quasi-molecules of SiOn.(n.= 1, 2, 3…) type, were used. At isochron.l an. isothermal an.ealin. in.the temperature ran.e of 300°C - 350°C, apart from the reaction.of vacan.y capturin. by oxygen.atoms with formation.of A-cen.ers, more complicated reaction. with participation.of vacan.ies an. oxygen.atoms were observed: A-cen.ers, oxygen.con.ain.n. quasi-molecules. A model is suggested to describe the observed processes that are qualitatively differen. from those takin. place in.samples con.ain.n. completely dissociated oxygen.

关键词： Impurity Oxygen Silicon Crystal Electron Irradiation In.rared (IR) Absorption Spectra An.ealin. Vacan.y In.erstitial Atom