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Sexual size monomorphism may evolve in lizards with a body size maximizing reproductive performance for both sexes

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Current Zoology 2023年第3期69卷 277-283页

作者： hong-liang lu Jian-Fang Gao Kun Guo Xiang Ji Hangzhou Key Laboratory for Ecosystem Protection and Restoration School of Life and Environmental SciencesHangzhou Normal UniversityHangzhou 311121ZhejiangChina Zhejiang Provincial Key Laboratory for Water Environment and Marine Biological Resources Protection College of Life and Environmental SciencesWenzhou UniversityWenzhou 325035ZhejiangChina

We used Takydromus septentrionalis,a sexually size-monomorphic lacertid lizard,as a model system to test the hypothesis that sexual size monomorphism may evolve in lizards where reproductive performance is maximized at a similar body size for both sexes.We allowed lizards housed in laboratory enclosures to lay as many clutches(for females)as they could or to mate as many times(for males)as they could in a breeding season.Size-assortative mating was weak but evident in T.septentrionalis,as revealed by the fact that male and female snout–vent lengths(SVLs)in mating pairs were significantly and positively correlated.Mating frequency(indicative of male reproductive performance)varied from 1 to 8 per breeding season,generally increasing as SVL increased in adult males smaller than 67.4 mm SVL.Clutch frequency varied from 1 to 7 per breeding season,with female reproductive performance(determined by clutch frequency,annual fecundity,and annual reproductive output)maximized in females with a SVL of 68.0 mm.Accordingly to our hypothesis,the reproductive performance was maximized in the intermediate sized rather than the largest individuals in both sexes,and the body size maximizing reproductive performance was similar for both sexes.Future work could usefully investigate other lineages of lizards with sexually monomorphic species in a phylogenetic context to corroborate the hypothesis of this study.

关键词： annual fecundity annual reproductive output clutch frequency mating frequency Takydromus septentrionalis

Recent Progress on Flexible Room-Temperature Gas Sensors Based on Metal Oxide Semiconductor

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Nano-Micro Letters 2022年第12期14卷 310-351页

作者： Lang-Xi Ou Meng-Yang Liu Li-Yuan Zhu David Wei Zhang hong-liang lu State Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics&SystemsSchool of MicroelectronicsFudan UniversityShanghai 200433People’s Republic of China Yiwu Research Institute of Fudan University Chengbei RoadYiwu City 322000ZhejiangPeople’s Republic of China

With the rapid development of the Internet of Things,there is a great demand for portable gas sensors.Metal oxide semiconductors(MOS)are one of the most traditional and well-studied gas sensing materials and have been widely used to prepare various commercial gas sensors.However,it is limited by high operating temperature.The current research works are directed towards fabricating high-performance flexible room-temperature(FRT)gas sensors,which are effective in simplifying the structure of MOS-based sensors,reducing power consumption,and expanding the application of portable devices.This article presents the recent research progress of MOS-based FRT gas sensors in terms of sensing mechanism,performance,flexibility characteristics,and applications.This review comprehensively summarizes and discusses five types of MOS-based FRT gas sensors,including pristine MOS,noble metal nanoparticles modified MOS,organic polymers modified MOS,carbon-based materials(carbon nanotubes and graphene derivatives)modified MOS,and two-dimensional transition metal dichalcogenides materials modified MOS.The effect of light-illuminated to improve gas sensing performance is further discussed.Furthermore,the applications and future perspectives of FRT gas sensors are also discussed.

关键词： Metal oxide semiconductor Flexible gas sensor Room temperature Nanomaterials

Integration Technology of Micro-LED for Next-Generation Display

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Research 2023年第2期2023卷 389-413页

作者： Dingbo Chen Yu-Chang Chen Guang Zeng David WeiZhang hong-liang lu State Key Laboratory of ASIC and System Shanghai lnstitute of Inteligent Electronics&SystemsSchoolof MicroelectronicsFudan UniversityShanghai 200433China Jia Shan Fudan Institute jaxingZhejang Province 314100China Key Laboratory of Specialty Fiber Optics and Optical Access Networks Shanghai Institute Communication and Data ScienceShanghai UniversityShanghai 200444China

Inorganic micro light-emitting diodes(micro-LEDs)based on II-V compound semiconductors have been widely studied for self-emissive displays.From chips to applications,integration technology plays an indispensable role ... 详细信息

关键词： LED diodes LEDs

Advances in Noble Metal-Decorated Metal Oxide Nanomaterials for Chemiresistive Gas Sensors:Overview

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纳微快报：英文版 2023年第6期15卷 353-427页

作者： Li‑Yuan Zhu Lang‑Xi Ou Li‑Wen Mao Xue‑Yan Wu Yi‑Ping Liu hong‑liang lu State Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics and SystemsSchool of MicroelectronicsFudan UniversityShanghai 200433People’s Republic of China School of Opto‑Electronic Information and Computer Engineering University of Shanghai for Science and TechnologyShanghai 200093People’s Republic of China State Key Laboratory of Metal Matrix Composites School of Material Science and EngineeringShanghai Jiao Tong UniversityShanghai 200240People’s Republic of China

Highly sensitive gas sensors with remarkably low detection limits are attractive for diverse practical application fields including real-time environmental monitoring,exhaled breath diagnosis,and food freshness analysis.Among various chemiresistive sensing materials,noble metal-decorated semiconducting metal oxides(SMOs)have currently aroused extensive attention by virtue of the unique electronic and catalytic properties of noble metals.This review highlights the research progress on the designs and applications of different noble metal-decorated SMOs with diverse nanostructures(e.g.,nanoparticles,nanowires,nanorods,nanosheets,nanoflowers,and microspheres)for high-performance gas sensors with higher response,faster response/recovery speed,lower operating temperature,and ultra-low detection limits.The key topics include Pt,Pd,Au,other noble metals(e.g.,Ag,Ru,and Rh.),and bimetals-decorated SMOs containing ZnO,SnO_(2),WO_(3),other SMOs(e.g.,In_(2)O_(3),Fe_(2)O_(3),and CuO),and heterostructured SMOs.In addition to conventional devices,the innovative applications like photo-assisted room temperature gas sensors and mechanically flexible smart wearable devices are also discussed.Moreover,the relevant mechanisms for the sensing performance improvement caused by noble metal decoration,including the electronic sensitization effect and the chemical sensitization effect,have also been summarized in detail.Finally,major challenges and future perspectives towards noble metal-decorated SMOs-based chemiresistive gas sensors are proposed.

关键词： Noble metal Bimetal Semiconducting metal oxide Chemiresistive gas sensor Electronic sensitization Chemical sensitization

Novel two-dimensional transition metal chalcogenides created by epitaxial growth

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Science China(Physics,Mechanics & Astronomy) 2021年第10期64卷 23-37页

作者： hong-liang lu Yu-Yang Zhang Xiao Lin hong-Jun Gao Institute of Physics and University of Chinese Academy of Sciences Chinese Academy of SciencesBeijing 100190China CAS Center for Excellence in Topological Quantum Computation University of Chinese Academy of SciencesBeijing 100190China Songshan Lake Materials Laboratory Dongguan 523808China

Two-dimensional(2D) materials have been a very important field in condensed matter physics, materials science, chemistry, and electronics. In a variety of 2D materials, transition metal chalcogenides are of particular interest due to their unique structures and rich properties. In this review, we introduce a series of 2D transition metal chalcogenides prepared by epitaxial growth. We show that not only 2D transition metal dichalcogenides can be grown, but also the transition metal chalcogenides that do not have bulk counterparts, and even patterned transition metal chalcogenides can be fabricated. We discuss the formation mechanisms of the novel structures, their interesting properties, and potential applications of these 2D transition metal chalcogenides. Finally, we give a summary and some perspectives on future studies.

关键词： 2D materials transition metal chalcogenides epitaxial growth

Polarization-induced photocurrent switching effect in heterojunction photodiodes

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Nano Research 2023年第4期16卷 5503-5510页

作者： Dingbo Chen Yu-Chang Chen Guang Zeng Yu-Chun Li Xiao-Xi Li Dong Li Chao Shen Nan Chi Boon S.Ooi David Wei Zhang hong-liang lu State Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics&SystemsSchool of MicroelectronicsFudan UniversityShanghai 200433China Key Laboratory for Information Science of Electromagnetic Waves Department of Communication Science and EngineeringFudan UniversityShanghai 200433China Photonics Laboratory Division of ComputerElectricaland Mathematical Sciences and EngineeringKing Abdullah University of Science and Technology(KAUST)Thuwal 23955-6900Kingdom of Saudi Arabia

The unipolar photocurrent in conventional photodiodes(PDs)based on photovoltaic effect limits the output modes and potential versatility of these devices in photodetection.Bipolar photodiodes with photocurrent switching are emerging as a promising solution for obtaining photoelectric devices with unique and attractive functions,such as optical logic operation.Here,we design an all-solid-state chip-scale ultraviolet(UV)PD based on a hybrid GaN heterojunction with engineered bipolar polarized electric field.By introducing the polarization-induced photocurrent switching effect,the photocurrent direction can be switched in response to the wavelength of incident light at 0 V bias.In particular,the photocurrent direction exhibits negative when the irradiation wavelength is less than 315 nm,but positive when the wavelength is longer than 315 nm.The device shows a responsivity of up to−6.7 mA/W at 300 nm and 5.3 mA/W at 340 nm,respectively.In particular,three special logic gates in response to different dual UV light inputs are demonstrated via a single bipolar PD,which may be beneficial for future multifunctional UV photonic integrated devices and systems.

关键词： GaN heterostructure ultraviolet(UV)photodiodes bipolar photocurrent optical logic device

MgO intercalation and crystallization between epitaxial graphene and Ru(0001)

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Rare Metals 2022年第1期41卷 304-310页

作者： Xue-Yan Wang Hui Guo Jin-An Shi Yi Biao Yan Li Guang-Yuan Han Shuai Zhang Kai Qian Wu Zhou Xiao Lin Shi-Xuan Du Cheng-Min Shen hong-liang lu hong-Jun Gao Institute of Physics and University of Chinese Academy of Sciences Chinese Academy of SciencesBeijing 100190China CAS Center for Excellence in Topological Quantum Computation University of Chinese Academy of SciencesBeijing 100190China Songshan Lake Materials Laboratory Dongguan 523808China

Graphene on insulator is the foundation of its practical applications in electronic information technology.However,fabrication of graphene on insulating substrates suffers from small size and limited quality by direct growth of graphene on dielectric substrates,and the method of transferring graphene onto insulating substrates is not so compatible with the large-scale production in industry.Here,we report the fabrication of high-quality,large-area,single-crystal graphene on crystalline magnesium oxide(MgO),which has a dielectric constant of 7–10.Magnesium and oxygen are intercalated at the interface of epitaxial graphene/Ru(0001)and form crystalline structure after high-temperature annealing.The graphene/MgO/Ru(0001)sample was characterized by low energy electron diffraction(LEED),scanning tunneling microscopy(STM),X-ray photoelectron spectroscopy(XPS),and scanning transmission electron microscopy(STEM).LEED pattern shows that the magnesium oxide displays crystalline structure,and STM studies show clearly that the top layer is graphene.STEM characterization of as-intercalated sample demonstrates that the MgO intercalation layer,with a thickness of up to 2.3 nm,has a crystal structure of rock salt MgO,and the out-of-plane crystal orientation is[001].Our work provides a new route for fabrication of graphene on high dielectric constant insulators,which may have potential applications in future electronics.

关键词： crystalline dielectric magnesium

Highly sensitive and stable β-Ga_(2)O_(3) DUV phototransistor with local back-gate structure and its neuromorphic application

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Nano Research 2022年第10期15卷 9359-9367页

作者： Xiao-Xi Li Guang Zeng Yu-Chun Li Qiu-Jun Yu Meng-Yang Liu Li-Yuan Zhu Wenjun Liu Ying-Guo Yang David Wei Zhang hong-liang lu State Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics&SystemsSchool of MicroelectronicsFudan UniversityShanghai 200433China Shanghai Synchrotron Radiation Facility(SSRF) Zhangjiang LabShanghai Advanced Research Institute&Shanghai Institute of Applied PhysicsChinese Academy of SciencesShanghai 201204China

Deep ultraviolet(DUV)phototransistors are key integral of optoelectronics bearing a wide spectrum of applications in flame sensor,military detector,oil spill detection,biological sensor,and artificial intelligence fields.In order to further improve the responsivity of UV photodetectors based onβ-Ga_(2)O_(3),in present work,high-performanceβ-Ga_(2)O_(3) phototransistors with local back-gate structure were experimentally demonstrated.The phototransistor shows excellent DUV photoelectrical performance with a high responsivity of 1.01×107 A/W,a high external quantum efficiency of 5.02×109%,a sensitive detectivity of 2.98×1015 Jones,and a fast rise time of 0.2 s under 250 nm illumination.Besides,first-principles calculations reveal the decent stability ofβGa_(2)O_(3) nanosheet against oxidation and humidity without significant performance degradations.Additionally,the hexagonal boron nitride(h-BN)/β-Ga_(2)O_(3) phototransistor can behave as a photonic synapse with ultralow power consumption of~9.6 fJ per spike,which shows its potential for neuromorphic computing tasks such as facial recognition.Thisβ-Ga_(2)O_(3) phototransistor will provide a perspective for the next generation optoelectrical systems.

关键词： β-Ga_(2)O_(3)phototransistors local back-gate responsivity stability photonic synapse

On Edge Connectivity and Parity Factor

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Acta Mathematica Sinica,English Series 2015年第5期31卷 772-776页

作者： hong liang lu Wei WANG Yuqing LIN School of Mathematics and Statistic Xi'an Jiaotong University School of Electrical Engineering and Computer Science The University of Newcastle

By Petersen＇s Theorem, a bridgeless cubic graph has a 2-factor. Fleischner （Discrete Math., 101, 33-37 （1992）） has extended this result to bridgeless graphs of minimum degree at least three by showing that every such graph has an even factor without isolated vertices. Let me〉 0 be even and mo〉 0 be odd. In this paper, we prove that every me-edge-connected graph with minimum degree at least me ＋ 1 contains an even factor with minimum degree at least me and every （mo ＋ 1）- edge-connected graph contains an odd factor with minimum degree at least too, which further extends Fleischner＇s result. Moreover, we show that our results are best possible.

关键词： Edge connectivity parity factor