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100 keV质子辐照InGaAs单结太阳电池性能退化机理研究

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太阳能学报 2023年第5期44卷 146-151页

作者：玛丽娅·黑尼陈馨芸雷琪琪艾尔肯·阿不都瓦衣提李豫东郭旗 he chengfa 新疆电子信息材料与器件重点实验室中国科学院特殊环境功能材料与器件重点实验室中国科学院新疆理化技术研究所乌鲁木齐830011 云南师范大学能源与环境科学学院昆明650500

为研究太阳电池光电参数由低能质子辐照产生的辐射损伤机制,对In_(0.53)Ga_(0.47)As单结太阳电池开展100 keV质子辐照及退火试验研究,分析太阳电池电参数和光谱响应在辐照及退火前后的变化规律,结合SRIM仿真计算结果对辐照引起的位移损... 详细信息

为研究太阳电池光电参数由低能质子辐照产生的辐射损伤机制,对In_(0.53)Ga_(0.47)As单结太阳电池开展100 keV质子辐照及退火试验研究,分析太阳电池电参数和光谱响应在辐照及退火前后的变化规律,结合SRIM仿真计算结果对辐照引起的位移损伤进行讨论。结果表明,当质子辐照累积注量为5×10^(12)p/cm^(2)时,In_(0.53)Ga_(0.47)As单结太阳电池的短路电流、开路电压和最大输出功率分别衰减到其初始值的88.8%、88.3%、72.3%;太阳电池光谱响应在短波区的衰减比长波区更严重。SRIM仿真结果表明,上述结果是由于100 keV的质子能量沉积在In_(0.53)Ga_(0.47)As单结太阳电池发射区和基区顶部而产生位移损伤缺陷导致的。对辐照后的太阳电池样品进行150℃退火处理,太阳电池电学参数因辐射感生缺陷的湮灭而产生了不同程度的恢复。

关键词：太阳电池效率质子辐照辐射损伤量子效率

Influence of channel length and layout on TID for 0.18 μm NMOS transistors

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Nuclear Science and Techniques 2013年第6期24卷 17-22页

作者： WU Xue LU Wu WANG Xin GUO Qi he chengfa LI Yudong XI Shanbin SUN Jing WEN Lin Key Laboratory of Functional Materials and Devices for Special Environments Xinjiang Technical Institute of Physics & ChemistryChinese Academy of Sciences Xinjiang Key Laboratory of Electronic Information Material and Device Graduate University of Chinese Academy of Sciences

Different channel lengths and layouts on 0.18μm NMOS transistors are designed for investigating the dependence of short channel effects(SCEs)on the width of shallow trench isolation(STI)devices and designing in radiation hardness.Results show that,prior to irradiation,the devices exhibited near–ideal I–V characteristics,with no significant SCEs.Following irradiation,no noticeable shift of threshold voltage is observed,radiation–induced edge–leakage current,however,exhibits significant sensitivity on TID.Moreover,radiation–enhanced drain induced barrier lowering(DIBL)and channel length modulation(CLM)effects are observed on short–channel NMOS transistors.Comparing to stripe–gate layout,enclosed–gate layout has excellent radiation tolerance.

关键词： NMOS晶体管沟道长度 TID 短沟道效应辐射诱发通道长度沟槽隔离特性曲线

Synthesis and optical properties of novel Gd^(3+)-doped BaZn_(2)(PO_(4))_(2)glass-ceramics for radiation detection applications

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Journal of Rare Earths 2022年第12期40卷 1927-1934,I0005页

作者： Wanli Li Zhaoyang Chen Jie Xu Pengjun Zhao Yanwei Fan chengfa he Key Laboratory of Functional Materials and Devices for Special Environments of CAS Xinjiang Key Laboratory of Electronic Information Materials and DevicesXinjiang Technical Institute of Physics&Chemistry of CASUrumqi 830011China University of Chinese Academy of Sciences Beijing 100049China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Laboratory of Solid-State Radiation Physics Urumqi 830011China

45 P_(2)O_(5)-15 BaO-25 ZnO-15 B2O_(3)glasses doped with different concentrations(0 mol%,0.1 mol%,0.25 mol%,0.5 mol%,and 0.75 mol%)of Gd^(3+)were prepared by a melt-quenching method and treated to fabricate glass-ceramics containing BaZn_(2)(PO_(4))_(2)crystals by controllable crystallization.The structural,optical,and dosimetric properties were investigated.FTIR spectra indicate that the glasses are composed of[PO_(4)],[BO_(3)],and[BO_(4)]basic structural units.The XRD pattern analysis indicates that the samples contain BaZn_(2)(PO_(4))_(2)crystals.In the photoluminesce nce(PL)spectra,two emission bands are observed at 307 and 313 nm due to the^(6)P_(5/2)→^(8)S_(7/2)and^(6)P_(7/2)→^(8)S_(7/2)transitions of Gd^(3+),respectively.The OSL dosimetric properties of glass-ceramics were studied further under beta radiation of90Sr.The optimal Gd^(3+)doping concentration of 0.5 mol%was determined.The fading of the OSL signal shows that the CW-OSL signal of Gd^(3+)-doped BaZn_(2)(PO_(4))_(2)glass-ceramics decays by about 58.95%within120 h,and the intensity remains stable thereafter.The thermoluminescence(TL)curve has three peaks at 164,240,and 344℃.Minimum detectable dose(MDD)of the 0.5 mol%Gd^(3+)-doped BaZn_(2)(PO_(4))_(2)glass-ceramics was calculated as 0.675 mGy.The samples also exhibit good signal reusability and a broad linear dose-response range(0.3-500 Gy).Results show the excellent dosimetric properties of Gd^(3+)-doped BaZn_(2)(PO_(4))_(2)glass-ceramics and their potential application in radiation dosimetry.

关键词： Glass-ceramics Photoluminescence Continuous wave-optically stimulated luminescence Thermoluminescence Radiation dosimetry Rare earths

Optically stimulated luminescence of Dy^3+-doped NaCaPO4 glass-ceramics

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Journal of Rare Earths 2020年第9期38卷 927-932,I0001页

作者： Jie Xu Zhaoyang Chen Minqiang Gai Yanwei Fan chengfa he Key Laboratory of Functional Materials and Devices for Special Environments of CAS Xinjiang Key Laboratory of Electronic Information Materials and DevicesXinjiang Technical Institute of Physics and Chemistry of CASUrumqi 830011China University of Chinese Academy of Sciences Beijing 100049China Laboratory of Solid State Radiation Physics Urumqi 830011China

Dy^3+-doped glass-ceramics containing NaCaPO4 crystals were successfully fabricated by heat treatment at base glass,and the luminescence properties were investigated for potential applications in radiation measurements.The photo luminescence(PL)excitation and emission spectra exhibit transitions related to Dy^3+ions corresponding to the strongest excitation and emission wavelengths at 351 and 575 nm,respectively.The CW-OSL properties as a function of dopant concentration,pre-heating temperature,pre-heating time and signal fading were investigated.The most appropriate Dy^3+ion concentration was found to be 0.25 mol%.The TL glow curves have a broad peak feature peaking at 195±5℃.The fading of the OSL signal would keep stable in five days with the intensity value of about 76.11%.The samples also exhibit good signal reusability and a broad linear dose response range(0.02-1000 Gy).

关键词： Optically stimulated luminescence Glass-ceramics Radiation measurements Photoluminescence Rare earths

质子辐照对RADFETs的γ辐照剂量响应的影响研究

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核技术 2022年第1期45卷 37-43页

作者：马函孙静何承发荀明珠中国科学院新疆理化技术研究所乌鲁木齐830011 中国科学院大学北京100049

针对辐射敏感晶体管(Radiation Sensitive Field-Effect Transistors,RADFETs)在地面标定使用(60)^Coγ射线源而实际空间应用时存在的质子电子辐射环境的差异性问题,进行了10 MeV质子和(60)^Coγ射线的对比辐照与协和辐照试验。采用中... 详细信息

针对辐射敏感晶体管(Radiation Sensitive Field-Effect Transistors,RADFETs)在地面标定使用(60)^Coγ射线源而实际空间应用时存在的质子电子辐射环境的差异性问题,进行了10 MeV质子和(60)^Coγ射线的对比辐照与协和辐照试验。采用中带电压法(Mid-gap Technique,MGT)和电荷泵法(Charge Pumping,CP)对器件辐照过程中的氧化物陷阱电荷和界面态陷阱电荷进行了分离,结合Geant4工具包仿真质子在氧化层中初级反冲原子(Primary Knock-on Atom,PKA)的产生过程,对RADFETs质子与(60)^Coγ辐射响应差异的微观机理进行了探讨。研究结果表明:RADFETs对质子的剂量响应较少,但质子辐照会在RADFETs中引入位移损伤,加剧其邻近界面处的陷阱电荷对测量结果的影响。因此RADFETs在空间应用时,有必要使用质子电子的通量模型对测量数据进行修正或设计特定的标定方案。

关键词： RADFETs 质子辐照 γ剂量标定陷阱电荷分离

Effect of Fe Substitution on Magnetic Properties and Radar Wave Absorption of the Y_(2)Co_(17) Rare Earth Soft Magnetic Alloy

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Electromagnetic Science 2024年第1期2卷 77-88页

作者： chengfa Tu Liang Qiao Institute of Applied Magnetism Key Laboratory for Magnetism and Magnetic Materials of Ministry of EducationLanzhou UniversityLanzhou 730000China

The rapid development of information technology leads a demand for high frequency soft magnetic materials with ex-ceptional radar wave absorption properties.A new magnetic material with superior radar wave absorption is explored in this paper.we explored the preparation of Y_(2)Co_(17)-xFex(x=0.0,1.0,2.0,3.0)alloy powders using yttrium oxide as a raw material by a low-cost and short preparation cycle reduction-diffusion process.The crystal structure,intrinsic magnetic properties,high frequency magnetism and radar wave absorption of Y_(2)Co_(17)-xFex(x=0.0,1.0,2.0,3.0)were investigated.These compounds have a perfect magnetic repair of Y_(2)Co_(17) and enable the improvement of the overall magnetic properties of Y_(2)Co_(17)-xFex(x=0.0,1.0,2.0,3.0)compounds.The Y_(2)Co_(17)-xFex/Polyurethane(PU)(x=0.0,1.0,2.0,3.0)absorbers were divided in detail using the zero-reflection mechanism.The results show that all Y_(2)Co_(17)-xFex/PU(x=0.0,1.0,2.0,3.0)absorbers have excellent absorption performance(reflection loss RL is less than-85 dB);in addition,Y_(2)Co_(15)Fe_(2)/PU absorbers and Y_(2)Co_(14)Fe_(3)/PU absorbers are superior candidates for S-band materials.In particular,the perfectly matched frequency fp of the modulated Y_(2)Co_(14)Fe_(3)/PU absorber is shifted to the L-band(1–2 GHz)where early warning radars are located.The Y_(2)Co_(14)Fe_(3)/PU absorber has an effective absorption bandwidth of 300 MHz(1.5–1.8 GHz)at a thickness of 5.230 mm.It can also absorb the full L-band at-4 dB,which has rarely been reported.

关键词： Rare earth soft magnetic alloy Reduction diffusion Soft magnetic composites Zero-reflection condition Reflec-tion loss.

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浮栅晶体管的辐照响应及退火特性研究

固体电子学研究与进展 2023年第3期43卷 281-286页

作者：任李贤孙静何承发荀明珠中国科学院特殊环境功能材料与器件重点实验室新疆电子信息材料与器件重点实验室中国科学院新疆理化技术研究所乌鲁木齐830011 中国科学院大学北京100049

对浮栅晶体管进行了^(60)Co-γ射线总剂量辐照试验,研究了浮栅晶体管的电离辐射响应特性,通过对晶体管在辐照后的常温和高温100℃下的退火,分析了电离辐射环境下浮栅晶体管的陷阱电荷的产生及变化过程,监测了浮栅电荷存储能力。结果表明... 详细信息

对浮栅晶体管进行了^(60)Co-γ射线总剂量辐照试验,研究了浮栅晶体管的电离辐射响应特性,通过对晶体管在辐照后的常温和高温100℃下的退火,分析了电离辐射环境下浮栅晶体管的陷阱电荷的产生及变化过程,监测了浮栅电荷存储能力。结果表明,辐照导致浮栅晶体管中多晶硅浮动栅极存储电荷的丢失,界面处感生的陷阱电荷数量远少于氧化物陷阱电荷及浮栅中电荷丢失量,退火效应可恢复浮栅受辐射影响的存储能力。试验数据为浮栅晶体管在电离辐射环境的测试及应用提供参考。

关键词：浮栅晶体管总剂量效应陷阱电荷分离辐照响应分析

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浮栅晶体管不同射线剂量响应特性研究

微电子学 2023年第6期53卷 981-987页

作者：任李贤孙静何承发荀明珠郭旗中国科学院新疆理化技术研究所乌鲁木齐830011 中国科学院大学北京100190

针对浮栅晶体管在不同射线下的响应差异问题,进行了^(60)Co-γ射线、25 MeV质子和1 MeV电子的辐照试验,研究了不同射线下浮栅晶体管的剂量响应差异。采用蒙特卡罗方法对器件灵敏区的吸收剂量进行了修正。通过中带电压分离出界面陷阱电荷... 详细信息

针对浮栅晶体管在不同射线下的响应差异问题,进行了^(60)Co-γ射线、25 MeV质子和1 MeV电子的辐照试验,研究了不同射线下浮栅晶体管的剂量响应差异。采用蒙特卡罗方法对器件灵敏区的吸收剂量进行了修正。通过中带电压分离出界面陷阱电荷,分析了不同射线下电离辐射响应差异的微观机理。研究结果表明,在等效剂量下,质子辐照后电离响应特性与^(60)Co-γ射线较为接近,电子辐照后响应程度略低于质子和^(60)Co-γ射线。对器件灵敏区的吸收剂量进行修正后,三种射线下的剂量响应特性差异降低。质子辐照后界面陷阱电荷数量多于^(60)Co-γ射线和电子射线。试验研究为浮栅晶体管辐照传感器的研制提供参考。

关键词：浮栅晶体管总剂量效应陷阱电荷分离剂量响应差异

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高温环境下PMOS剂量计的剂量响应研究

原子能科学技术 2021年第12期55卷 2175-2182页

作者：马函孙静何承发荀明珠中国科学院新疆理化技术研究所新疆乌鲁木齐830011 中国科学院大学北京100049

通过室温和高温条件下的辐照试验,研究了100 nm和400 nm栅氧厚度PMOS剂量计(RADFETs)在高温下的辐照响应。实验剂量率为3 rad(Si)/s和0.098 rad(Si)/s,辐照总剂量达80 krad(Si)。采用中带电压法进行氧化物陷阱电荷和界面态陷阱电荷的分... 详细信息

通过室温和高温条件下的辐照试验,研究了100 nm和400 nm栅氧厚度PMOS剂量计(RADFETs)在高温下的辐照响应。实验剂量率为3 rad(Si)/s和0.098 rad(Si)/s,辐照总剂量达80 krad(Si)。采用中带电压法进行氧化物陷阱电荷和界面态陷阱电荷的分离,对高温下辐照响应的微观机理进行了分析。氧化物陷阱电荷的退火作用是导致非线性响应的主要原因。不同氧化层厚度的氧化物陷阱电荷密度差异很大,高温下100 nm和400 nm RADFETs的界面态陷阱电荷密度差异较小。最后讨论了高温下不同栅氧厚度RADFETs的适用性,为高温环境下RADFETs的应用提供了参考。

关键词：高温环境 RADFETs 辐照响应