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Observation of quadratic magnetoresistance in twisted double bilayer graphene

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Chinese Physics B 2022年第10期31卷 273-277页

作者：褚衍邦刘乐季怡汝田金朋吴帆帆汤建袁亚龙赵岩翀昝晓州杨蓉 Kenji watanabe Takashi Taniguchi 时东霞杨威张广宇 Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China School of Physical Sciences University of Chinese Academy of SciencesBeijing 100190China Songshan Lake Materials Laboratory Dongguan 523808China Research Center for Functional Materials National Institute for Materials Science1-1 NamikiTsukuba 305-0044Japan International Center for Materials Nanoarchitectonics National Institute for Materials Science1-1 NamikiTsukuba 305-0044Japan

Magnetoresistance(MR) provides rich information about Fermi surface, carrier scatterings, and exotic phases for a given electronic system. here, we report a study of the magnetoresistance for the metallic states in twisted double bilayer graphene(TDBG). We observe quadratic magnetoresistance in both Moiré valence band(VB) and Moiré conduction band(CB). The scaling analysis shows validity of Kohler's rule in the Moiré valence band. On the other hand, the quadratic magnetoresistance appears near the halo structure in the Moiré conduction band, and it violates Kohler's rule, demonstrating the MR scaling related to band structure in TDBG. We also propose an alternative scaling near the halo structure. Further analysis implies that the observed quadratic magnetoresistance and alternative scaling in conduction band are related to the halo boundary. Our results may inspire investigation on MR in twisted 2D materials and provide new knowledge for MR study in condensed matter physics.

关键词： twisted double bilayer graphene Kohler's rule magnetoresistance scaling critical behavior

Coaxial boron nitride nanotubes as interfacial dielectric layers to lower interface trap density in carbon nanotube transistors

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Nano Research 2023年第11期16卷 12840-12848页

作者： Keigo Otsuka Taiki Sugihara Taiki Inoue Weijie Jia Satoru Matsushita Takanobu Saito Minhyeok Lee Takashi Taniguchi Kenji watanabe Gregory Pitner Ming-Yang Li Tzu-Ang Chao Rong Xiang Shohei Chiashi Shigeo Maruyama Department of Mechanical Engineering The University of TokyoTokyo 113-8656Japan Department of Applied Physics Osaka UniversityOsaka 565-0871Japan Research Center for Materials Nanoarchitectonics National Institute for Materials ScienceTsukuba 305-0044Japan Research Center for Electronic and Optical Materials National Institute for Materials ScienceTsukuba 305-0044Japan Corporate Research Taiwan Semiconductor Manufacturing CompanySan JoseCA 95134USA Corporate Research Taiwan Semiconductor Manufacturing CompanyHsinchu 30078

A semiconductor/dielectric interface is one of the dominant factors in device characteristics,and a variety of oxides with high dielectric constants and low interface trap densities have been used in carbon nanotube *** the crystal structure of nanotubes with no dangling bonds,there remains room to investigate unconventional dielectric ***,we fabricate carbon nanotube transistors with boron nitride nanotubes as interfacial layers between channels and gate dielectrics,where a single semiconducting nanotube is used to focus on switching behaviors at the subthreshold *** subthreshold swing of 68 mV·dec^(−1)is obtained despite a 100-nm-thick Sio_(2)dielectric,corresponding to the effective interface trap density of 5.2×10^(11)cm^(−2)·eV^(−1),one order of magnitude lower than those of carbon nanotube devices without boron nitride *** interfacial layers also result in the mild suppression of threshold voltage variation and *** achieve Ohmic contacts through the selective etching of boron nitride nanotubes with XeF2 gas,overcoming the trade-off imposed by wrapping the inner *** impacts of fluorinating carbon nanotubes on device performances are also confirmed as long as the etching is applied exclusively at source/drain *** results represent an important step toward nanoelectronics that exploit the advantage of one-dimensional van der Waals heterostructures.

关键词： carbon nanotubes hexagonal boron nitride van der Waals interfaces field-effect transistors subthreshold swing selective etching

Switching of K-Q intervalley trions fine structure and their dynamics in n-doped monolayer WS_(2)

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Opto-Electronic Advances 2023年第4期6卷 28-37页

作者： Jiajie Pei Xue Liu Andrés Granados delÁguila Di Bao Sheng Liu Mohamed-Raouf Amara Weijie Zhao Feng Zhang Congya You Yongzhe Zhang Kenji watanabe Takashi Taniguchi han Zhang Qihua Xiong Collaborative Innovation Center for Optoelectronic Science and Technology International Collaborative Laboratory of 2D Materials for Optoelectronic Science and Technology of Ministry of Education and Guangdong ProvinceCollege of Optoelectronic EngineeringShenzhen UniversityShenzhen 518060China College of Materials Science and Engineering Fuzhou UniversityFuzhou 350108China Division of Physics and Applied Physics School of Physical and Mathematical SciencesNanyang Technological UniversitySingapore 637371Singapore College of Materials Science and Engineering Beijing University of TechnologyBeijing 100124China Research Center for Functional Materials International Center for Materials NanoarchitectonicsNational Institute for Materials ScienceTsukubaIbaraki 305-0044Japan State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics Tsinghua UniversityBeijing 100084China.

Monolayer group VI transition metal dichalcogenides(TMDs)have recently emerged as promising candidates for photonic and opto-valleytronic *** optoelectronic properties of these atomically-thin semiconducting crystals are strongly governed by the tightly bound electron-hole pairs such as excitons and trions(charged excitons).The anomalous spin and valley configurations at the conduction band edges in monolayer WS_(2)give rise to even more fascinating valley many-body *** we find that the indirect Q valley in the first Brillouin zone of monolayer WS_(2)plays a critical role in the formation of a new excitonic state,which has not been well *** employing a high-quality h-BN encapsulated WS_(2)field-effect transistor,we are able to switch the electron concentration within K-Q valleys at conduction band ***,a distinct emission feature could be excited at the high electron doping *** feature has a competing population with the K valley trion,and experiences nonlinear power-law response and lifetime dynamics under *** findings open up a new avenue for the study of valley many-body physics and quantum optics in semiconducting 2D materials,as well as provide a promising way of valley manipulation for next-generation entangled photonic devices.

关键词： 2D materials WS_(2) charged excitons trions indirect Q-valley valleytronics

Near Real-Time Calculation of Ionospheric Electric Fields and Currents Using GEDAS

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Chinese Journal of Astronomy and Astrophysics 2003年第4期3卷 375-380页

作者： h.Shirai Y.Kamide E.A.Kihn B.hausman M.Shinohara h.Nakata M.Isowa T.K.Takada Y.watanabe S.Masuda Solar-Terrestrial Environment Laboratory Nagova UniversityToyokawaAichi 442-8507Japan Now at Ichinoseki National College of TechnologyIchinosekiIwate 021-8511JapanSolar-Terrestrial Environment LaboratoryNagoya UniversityToyokawaAichi 442-8507JapanNOAA National Geophysical Data CenterBoulderColorado 80303-3328U.S.A.Department of Physics and AstronomyRice UniversityHoustonDexas 77005-1892U.S.A.Solar-Terrestrial Environment LaboratoryNagoya UniversityToyokawaAichi 442-8507Japan Now at Communications Research LaboratoryKoganeiTokyo 184-8795JapanSolar-Terrestrial Environment LaboratoryNagoya UniversityToyokawaAichi 442-8507Japan Now at Chiba UniversityChibaChiba 263-8522JapanSolar-Terrestrial Environment LaboratoryNagoya UniversityToyokawaAichi 442-8507JapanSolar-Terrestrial Environment LaboratoryNagoya UniversityToyokawaAichi 442-8507JapanSolar-Terrestrial Environment LaboratoryNagoya UniversityToyokawaAichi 442-8507JapanSolar-Terrestrial Environment LaboratoryNagoya UniversityToyokawaAichi 442-8507Japan

This paper presents the recent progress in our project of estimating near real-time electric fields and currents in the ionosphere through our computer system called the Geospace Environment Data Analysis System (GEDAS). We show a new technique in which data from ground magnetometers are collected by the system and used as input for the KRM and AMIE programs to calculate the distribution of ionospheric electric fields and currents, as well as of other ionospheric parameters, such as electric potential patterns. One of the goals of this project is to specify ionospheric processes. Examples of the near real-time calculation and the data flow of our scheme are presented.

关键词： data analysis-solar-terrestrial relations

Regulation of RNase E during the UV stress response in the cyanobacterium Synechocystis *** 6803

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mLife 2023年第1期2卷 43-57页

作者： Satoru watanabe Damir Stazic Jens Georg Shota Ohtake Yutaka Sakamaki Megumi Numakura Munehiko Asayama Taku Chibazakura Annegret Wilde Claudia Steglich Wolfgang R.hess Faculty of Biology Genetics and Experimental BioinformaticsUniversity of FreiburgFreiburgGermany Department of Bioscience Tokyo University of AgricultureSetagayakuTokyoJapan School of Agriculture Molecular GeneticsIbaraki UniversityIbarakiJapan Faculty of Biology Molecular GeneticsUniversity of FreiburgFreiburgGermany Nexxiot Prime Tower(Hardstrasse 201)ZurichSwitzerland.

Endoribonucleases govern the maturation and degradation of RNA and are indispensable in the posttranscriptional regulation of gene expression.A key endoribonuclease in Gram-negative bacteria is RNase *** ensure an appropriate supply of RNase E,some bacteria,such as Escherichia coli,feedback-regulate RNase E expression via the rne 5′-untranslated region(5′UTR)in ***,the mechanisms involved in the control of RNase E in other bacteria largely remain *** rely on solar light as an energy source for photosynthesis,despite the inherent ultraviolet(UV)*** this study,we first investigated globally the changes in gene expression in the cyanobacterium Synechocystis *** ^(6)803 after a brief exposure to *** the 407 responding genes 2 h after UV exposure was a prominent upregulation of rne mRNA ***,the enzymatic activity of RNase E rapidly increased as well,although the protein stability *** unique response was underpinned by the increased accumulation of full-length rne mRNA caused by the stabilization of its 5′UTR and suppression of premature transcriptional termination,but not by an increased transcription *** of RNA 3′ends and in vitro cleavage assays revealed that RNase E cleaves within a stretch of six consecutive uridine residues within the rne 5′UTR,indicating *** observations suggest that RNase E in cyanobacteria contributes to reshaping the transcriptome during the UV stress response and that its required activity level is secured at the RNA level despite the enhanced turnover of the protein.

关键词： cyanobacteria protein turnover ribonuclease stress response

Electrically Tunable Energy Bandgap in Dual-Gated Ultra-Thin Black Phosphorus Field Effect Transistors

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Chinese Physics Letters 2017年第4期34卷 87-91页

作者：颜世莉谢志坚陈剑豪 Takashi Taniguchi Kenji watanabe International Center for Quantum Materials Peking University Collaborative Innovation Center of Quantum Matter high Pressure Group National Institute for Materials Science

The energy bandgap is an intrinsic character of semiconductors, which largely determines their properties. The ability to continuously and reversibly tune the bandgap of a single device during real time operation is of great importance not only to device physics but also to technological applications. here we demonstrate a widely tunable bandgap of few-layer black phosphorus （BP） by the application of vertical electric field in dual-gated BP field-effect transistors. A total bandgap reduction of 124 meV is observed when the electrical displacement field is increased from 0.10 V/nm to 0.83 V/nm. Our results suggest appealing potential for few-layer BP as a tunable bandgap material in infrared optoelectronies, thermoelectric power generation and thermal imaging.

关键词： Electrically Tunable Energy Bandgap in Dual-Gated Ultra-Thin Black Phosphorus Field Effect Transistors FET BP

Spin-orbit-locked hyperbolic polariton vortices carrying reconfigurable topological charges

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eLight 2022年第1期2卷 143-153页

作者： Mingsong Wang Guangwei hu Saroj Chand Michele Cotrufo Yohannes Abate Kenji watanabe Takashi Taniguchi Gabriele Grosso Cheng‑Wei Qiu Andrea Alù Photonics Initiative Advanced Science Research CenterCity University of New YorkNew York CityNY 10031USA Department of Electrical and Computer Engineering National University of SingaporeSingapore 116083Singapore Department of Physics and Astronomy The University of GeorgiaAthensGA 30602USA Research Center for Functional Materials National Institute for Materials ScienceTsukubaIbaraki 305‑0044Japan International Center for Materials Nanoarchitectonics National Institute for Materials ScienceTsukubaIbaraki 305‑0044Japan Physics Program Graduate CenterCity University of New YorkNew YorkNY 10016USA

The topological features of optical vortices have been opening opportunities for free-space and on-chip photonic technologies,e.g.,for multiplexed optical communications and robust information *** a parallel but disjoint effort,polar anisotropic van der Waals nanomaterials supporting hyperbolic phonon polaritons(hP2s)have been leveraged to drastically boost light-matter *** far hP2 studies have been mainly focusing on the control of their amplitude and scale *** we report the generation and observation of mid-infrared hyperbolic polariton vortices(hP2Vs)associated with reconfigurable topological ***-shaped gold disks coated with a flake of hexagonal boron nitride are exploited to tailor spin-orbit interactions and realise deeply subwavelength *** complex interplay between excitation spin,spiral geometry and hP2 dispersion enables robust reconfigurability of the associated topological *** results reveal unique opportunities to extend the application of hP2s into topological photonics,quantum information processing by integrating these phenomena with single-photon emitters,robust on-chip optical applications,sensing and nanoparticle manipulation.

关键词： hyperbolic polariton vortex Light-matter interactions Spin-orbit interaction Topological charge Reconfigurability

Bi-based superconductors fabricated in high magnetic fields

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中国有色金属学会会刊：英文版 2006年第B1期16卷 11-19页

作者： LU XY A. NAGATA K. SUGAWARA K. watanabe T. NOJIMA Faculty of Engineering and Resource Science Akita University Akita 010-8502 Japan Institute for Materials Research Tohoku University Sendai 980-8577 Japan Center for Low Temperature Science Tohoku University Sendai 980-8577 Japan

The microstructure and superconducting properties of Bi-2223 superconductor fabricated in high magnetic fields were investigated. The results shows that the Bi-2212 grains with their c-axis parallel to the magnetic field were formed after the partial-melting and solidification in 8 T magnetic field, and transformed into the Bi-2223 grains with c-axis alignment during the further sintering process at 840 ℃ without magnetic field. The conversion of Bi-2212 grains to Bi-2223 grains has the heredity in grain alignment. The mixed structures of the Bi-2223 and the Bi-2212 grains with their c-axis parallel to the magnetic field are formed in samples sintered at 850?855 ℃ in 10 T magnetic field. When sintered in 10 T below 845 ℃, a high proportion of Bi-2223 phase is obtained, however no preferred orientation is observed. The Bi-2223 grains with their c-axis parallel to the axial direction of the vertical tube furnace are formed not only on the surface, but also in the center of the sample sintered at 850 ℃ for 120 h in a 15 ℃/cm temperature gradient without magnetic field. Moreover, the samples sintered in the temperature gradient and in a 10 T magnetic field have a stronger c-axis alignment of Bi-2223 phase.

关键词：铋基超导体制造铋-2223 磁场显微结构

Identification of telomere maintenance gene variations related to lung adenocarcinoma risk by genome-wide association and whole genome sequencing analyses

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Cancer Communications 2024年第2期44卷 287-293页

作者： Kouya Shiraishi Atsushi Takahashi Yukihide Momozawa Yataro Daigo Syuzo Kaneko Takahisa Kawaguchi hideo Kunitoh Shingo Matsumoto hidehito horinouchi Akiteru Goto Takayuki honda Kimihiro Shimizu Masahiro Torasawa Daisuke Takayanagi Motonobu Saito Akira Saito Yuichiro Ohe Shun-ichi watanabe Koichi Goto Masahiro Tsuboi Katsuya Tsuchihara Sadaaki Takata Tomomi Aoi Atsushi Takano Masashi Kobayashi Yohei Miyagi Kazumi Tanaka hiroyuki Suzuki Daichi Maeda Takumi Yamaura Maiko Matsuda Yoko Shimada Takaaki Mizuno hiromi Sakamoto Teruhiko Yoshida Yasushi Goto Tatsuya Yoshida Taiki Yamaji Makoto Sonobe Shinichi Toyooka Kazue Yoneda Katsuhiro Masago Fumihiro Tanaka Megumi hara Nobuo Fuse Satoshi S.Nishizuka Noriko Motoi Norie Sawada Yuichiro Nishida Kazuki Kumada Kenji Takeuchi Kozo Tanno Yasushi Yatabe Kuniko Sunami Tomoyuki hishida Yasunari Miyazaki hidemi Ito Mitsuhiro Amemiya hirohiko Totsuka haruhiko Nakayama Tomoyuki Yokose Kazuyoshi Ishigaki Toshiteru Nagashima Yoichi Ohtaki Kazuhiro Imai Ken Takasawa Yoshihiro Minamiya Kazuma Kobayashi Kenichi Okubo Kenji Wakai Atsushi Shimizu Masayuki Yamamoto Motoki Iwasaki Koichi Matsuda Johji Inazawa Yuichi Shiraishi hiroyoshi Nishikawa Yoshinori Murakami Michiaki Kubo Fumihiko Matsuda Yoichiro Kamatani Ryuji hamamoto Keitaro Matsuo Takashi Kohno Division of Genome Biology National Cancer Center Research InstituteTokyoJapan Department of Clinical Genomics National Cancer Center Research InstituteTokyoJapan Laboratory for Statistical Analysis Center for Integrative Medical SciencesRIKENYokohamaJapan Department of Genomic Medicine Research InstituteNational Cerebral and Cardiovascular CenterOsakaJapan Laboratory for Genotyping Development Center for Integrative Medical SciencesRIKENYokohamaJapan Center for Antibody and Vaccine Therapy Research HospitalInstitute of Medical ScienceThe University of TokyoTokyoJapan Department of Medical Oncology and Cancer Center and Center for Advanced Medicine against CancerShiga University of Medical ScienceOtsuJapan Division of Medical AI Research and Development National Cancer Center Research InstituteTokyoJapan Center for Genomic Medicine Graduate School of MedicineKyoto UniversityKyotoJapan Department of Medical Oncology Japanese Red Cross Medical CenterTokyoJapan Department of Thoracic Oncology National Cancer Center Hospital EastJapan Department of Thoracic Oncology National Cancer Center HospitalTokyoJapan Department of Cellular and Organ Pathology Graduate School of MedicineAkita UniversityAkitaJapan Department of Respiratory Medicine Tokyo Medical and Dental UniversityBunkyo-kuTokyoJapan Division of General Thoracic Surgery Department of SurgeryShinshu University School of MedicineMatsumotoNaganoJapan Department of General Surgical Science Division of General Thoracic SurgeryGunma University Graduate School of MedicineIntegrative Center of General SurgeryGunma University HospitalGunmaJapan Department of Gastrointestinal Tract Surgery Fukushima Medical University School of MedicineFukushimaJapan StaGen Co. LtdTokyoJapan Division of Thoracic Surgery National Cancer Center HospitalTokyoJapan Department of Thoracic Surgery National Cancer Center Hospital EastChibaJapan Division of Translational Informatics Exploratory Oncology Research and Clinical Trial Center(EPOC

Dear editor,Lung carcinoma is responsible for the highest fatal-ity rate among cancer-related deaths globally,with lung adenocarcinoma(LADC)emerging as the prevailing sub-type.

关键词： adenocarcinoma lung Lung