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Journal of Materials Science & Technology 2013年第9期29卷 830-834页

作者： Yunfeng Wu Dongping Liu Naisen Yu Yuanda Liu Hongwei Liang guotong du School of Physics and Optoelectronic Technology Dalian University of Technology School of Physics and Materials Engineering Dalian Nationalities University

ZnO thin films were grown on Si （111） substrates by low-pressure metal-organic chemical vapor deposition. The crystal structures and electrical properties of as-grown sample were investigated by scanning electron microscopy （SEM） and conductive atomic force microscopy （C-AFM）. It can be seen that with increasing growth temperature, the surface morphology of ZnO thin films changed from flake-like to cobblestones-like structure. The current maps were simultaneously recorded with the topography, which was gained by C-AFM contact mode. Conductivity for the off-axis facet planes presented on ZnO grains enhanced. Measurement results indicate that the off-axis facet planes were more electrically active than the c-plane of ZnO flakes or particles probably due to lower Schottky barrier height of the off-axis facet planes.

关键词： ZnO thin films Metal-organic chemical vapor deposition Conductive atomic force microscopy Scanning electron microscopy

The Inorganic-organic Hybrid Junction with n-ZnO Nanorods/p-polyfluorene Structure Grown with Low-temperature Aqueous Chemical Growth Method

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Journal of Wuhan University of Technology(Materials Science) 2012年第2期27卷 296-300页

作者：吴伟边继明 SUN Yinglan CHENG Chuanhui SUN Jingchang LIANG Hongwei LUO Yingmin du guotong School of Physics and Optoelectronic Engineering Dalian University of TechnologyDalian 116024China School of Physics and Electronic Technology Liaoning Normal UniverityDalian 116029China

The inorganic-organic hybrid junction was synthesized on ITO glass substrate, which was consisted of an n-type ZnO nanorods （NRs） grown by low-temperature aqueous chemical growth method and a p-type polyfluorene （PF） organic film fabricated by spin-coating. The experimental results indicate that densely and uniformly distributed ZnO nanorods are successfully grown on the PF layer. The thickness of the PF layer plays a dominant role for the current-voltage （I-V） characteristic of the ZnO NRs/PF inorganic-organic hybrid junction device, and a p-n junction with obviously rectifying behavior is achieved with optimal PF layer thickness. The photoluminescence （PL） spectrum covering the broad visible range was obtained from the n-ZnO nanorods/p-polyfluorene （PF） structure, which was originated from the combination of the PF-related blue emission and the ZnO-related deep level emission.

关键词： ZnO nanorods polyfluorene inorganic-organic hybrid junction photoluminescence

Comparative investigation of three types of ethanol sensor based on NiO-SnO_2 composite nanofibers

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Chinese Science Bulletin 2012年第17期57卷 2087-2093页

作者： SHEN RenSheng LI XiangPing XIA XiaoChuan LIANG HongWei WU GuoGuang LIU Yang CHENG ChuanHui du guotong School of Physics and Optoelectronic Technology Dalian University of Technology Dalian 116024China State Key Laboratory on Integrated Optoelectronics College of Electronic Science and EngineeringJilin UniversityChangchun 130012China

NiO-SnO2 composite nanofibers were synthesized via electrospinning techniques and characterized by X-ray diffraction,scanning electron microscopy,transmission electron microscopy,and X-ray photoelectron *** types of sensor were applied to investigate the sensing properties of these *** A were fabricated by mixing the nanofibers with deionized water,and then grinding and coating them on ceramic tubes to form indirect heated gas *** B(with an area of 600 μm×200 μm) were formed by spinning nanofibers on Si substrates with Pt signal electrodes and Pt *** C were fabricated by spinning nanofibers on plane ceramic substrates(with a large area of 13.4 mm×7 mm) with Ag-Pd signal electrodes *** operating temperatures of sensors A and B were controlled by adjusting heater currents,and the operating temperatures of sensors C were controlled by adjusting an external temperature control *** results show that sensors C possess the highest sensing properties,such as high response values(about 42 to 100 μL/L ethanol),quick response/recovery speeds(the response and recovery times were 4 and 7 s,respectively),and excellent *** phenomena were explained by the retained fiber morphology and suitable sensor *** presented results can provide some useful information for the design and optimization of one-dimensional nanomaterial-based gas sensors.

关键词：复合纳米纤维乙醇传感器 SnO2 类型 NIO 温度控制装置 X射线光电子能谱扫描电子显微镜

Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga_2O_3

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Chinese Physics B 2019年第4期28卷 375-380页

作者： Chao Yang Hongwei Liang Zhenzhong Zhang Xiaochuan Xia Heqiu Zhang Rensheng Shen Yingmin Luo guotong du School of Microelectronics Dalian University of Technology State Key Laboratory of Luminescence and Applications Changchun Institute of Optics Fine Mechanics and PhysicsChinese Academy of Sciences

A solar-blind photodetector is fabricated on single crystal Ga_2O_3 based on vertical structure Schottky barrier diode. A Cu Schottky contact electrode is prepared in a honeycomb porous structure to increase the ultraviolet(UV) *** quantum efficiency is about 400% at 42 V. The Ga_2O_3 photodetector shows a sharp cutoff wavelength at 259 nm with high solar-blind/visible(= 3213) and solar-blind/UV(= 834) rejection ratio. Time-resolved photoresponse of the photodetector is investigated at 253-nm illumination from room temperature(RT) to 85.8℃. The photodetector maintains a high reversibility and response speed, even at high temperatures.

关键词： Ga2O3 single crystal solar-blind photodetector high temperature

Selective Growth of GaN on Slope Cone-shaped Patterned Sapphire Substrate

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Chemical Research in Chinese Universities 2014年第4期30卷 556-559页

作者： YANG Dechao LIANG Hongwei QIU Yu LI Pengchong LIU Yang SHEN Rensheng XIA Xiaochuan YU Zhennan CHANG Yuchun ZHANG Yuantao du guotong State Key Laboratory on Integrated Optoelectronics College of Electronic Science and Engineering Jilin University Changchun 130012 P. R. China Department of Electronic Engineering Dalian Neusoft University of Information Dalian 116024 P. R. China School of Physics and Optoelectronic Technology Dalian University of Technology Dalian 116024 P. R. China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 P. R. China Zhejiang Crystal-optech Co. Ltd. Taizhou 318015 P. R. China

Cone-shaped patterned sapphire substrate was prepared by inductively coupled plasma etching and GaN nucleation layer was grown on it by metal-organic chemical vapor deposition.A selective growth of GaN nucleation layer was found on the slope of the cone-shaped patterned sapphire substrat,and the distribution morphology of GaN had significantly changed after it was *** selective growth and redistribution were analyzed by investigating the distribution of crystallographic planes on the cone surface and the atom array of specific planes at atom level.

关键词： Patterned sapphire substrate GaN Selective growth Crystallographic plane

Temperature-dependent photoluminescence on organic inorganic metal halide perovskite CH_3NH_3Pb I_(3-)Cl_ prepared on ZnO/FTO substrates using a two-step method

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Chinese Physics B 2017年第1期26卷 482-487页

作者： Shiwei Zhuang Deqian Xu Jiaxin Xu Bin Wu Yuantao Zhang Xin Dong Guoxing Li Baolin Zhang guotong du State Key Laboratory on Integrated Optoelectronics College of Electronic Science and Engineering Jilin University Changchun 130012 China

Temperature-dependent photoluminescence characteristics of organic-inorganic halide perovskite CH3NH3Pb I3-xClx films prepared using a two-step method on ZnO/FTO substrates were investigated. Surface morphology and absorption characteristics of the films were also studied. Scanning electron microscopy revealed large crystals and substrate coverage. The orthorhombic-to-tetragonal phase transition temperature was-140 K. The films＇ exciton binding energy was 77.6 ± 10.9 meV and the energy of optical phonons was 38.8 ± 2.5 meV. These results suggest that perovskite CH3NH3Pb I（3-x）Clx films have excellent optoelectronic characteristics which further suggests their potential usage in perovskitebased optoelectronic devices.

关键词： perovskite temperature-dependent photoluminescence two-step method ZnO

Theory on single molecule-photon cryocooler——Conception and quantum transition processes

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Science China Mathematics 2001年第1期44卷 113-119页

作者：秦伟平杜国同许武陈宝玖秦冠仕黄世华 Changchun Inst. Optical Fine M. Chinese Academy of Sciences Changchun 130021 China Lab. of Excited State Processes Chinese Academy of Sciences Changchun 130021 China Electronic Engineering Department Jilin University Changchun 130023 China Natl. Intgd. Optoelectronics Lab. Jilin University Changchun 130023 China

The micro mechanism of anti-Stokes fluorescent cooling was investigated on molecular or ionic scale. A new conception of single molecule-photon cryocooler (SMPC) was given, and the smallest cryocooler in the world was predicted. We described SMPC and its running principle in detail. The quantum transition processes of SMPC and the largest cooling coefficient that SMPC can get in an optical transition were given. Also we studied the random property of SMPC in cooling processes. The thermodynamic behavior of single Yb3+ ion as a photon cryocooler was imitated.

关键词： single molecule ion cryocooler laser cooling anti-Stokes fluorescent cooling.

M-Z型极化DANS聚合物电光波导强度调制器研究

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光子学报 2006年第5期35卷 646-649页

作者：高福斌杜国同张平邢汝冰吉林大学电子科学与工程学院集成光电子学国家重点实验室长春130012 中国科学院长春光学精密机械与物理研究所长春130033

研究了Mach-Zehnder型极化聚合物电光波导强度调制器的制备工艺·器件采用DANS(4-dimethylamino-4′nitro-stlibene)聚合物为电光波导材料,由电光波导层、上下介质缓冲层、上下金属电极层构成五层波导结构·对五层光波导各层之间的光学... 详细信息

研究了Mach-Zehnder型极化聚合物电光波导强度调制器的制备工艺·器件采用DANS(4-dimethylamino-4′nitro-stlibene)聚合物为电光波导材料,由电光波导层、上下介质缓冲层、上下金属电极层构成五层波导结构·对五层光波导各层之间的光学、化学以及微加工工艺的相互兼容性进行了深入研究·采用紫外光漂白方法制备出侧壁光滑的条波导,采用钨丝电晕极化方法对DANS聚合物波导进行有效极化,使其具有电光特性·通过优化器件制备工艺,研制出工作波长为1300nm的M-Z型电光波导强度调制器原型器件·实验测得器件半波电压约为10V,调制带宽约为1GHz·

关键词： DANS聚合物电晕极化紫外光漂白电光波导强度调制器

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结构封装式光纤Bragg光栅温度补偿研究

仪器仪表学报 2006年第Z1期27卷 4-6页

作者：王本宇闫卫平张玉书杜国同大连理工大学电子与信息工程学院大连116023 大连理工大学物理系大连116023

光纤Bragg光栅的中心反射波长λB会随温度的变化而漂移,影响其在波分复用及压力测量等方面的应用.本文通过对石英和有机玻璃两种热膨胀系数不同的材料进行合理的结构设计,提出了一种无源温度补偿装置,探讨了施加预应力对光纤Bragg光栅... 详细信息

光纤Bragg光栅的中心反射波长λB会随温度的变化而漂移,影响其在波分复用及压力测量等方面的应用.本文通过对石英和有机玻璃两种热膨胀系数不同的材料进行合理的结构设计,提出了一种无源温度补偿装置,探讨了施加预应力对光纤Bragg光栅补偿效果的影响,并对单面封装和双面封装的补偿效果进行了对比研究.该装置在-19℃～60℃的温度范围内,中心反射波长仅漂移0.035nm,温度稳定性大约提高了20倍.

关键词：光纤布拉格光栅温度补偿结构封装

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非对称补偿条形复合腔半导体激光器列阵

光学学报 1989年第1期9卷 23-27页

作者：王政杜国同高鼎三吉林大学电子科学系

本文描述了一种新结构半导体激光器阵列——非对称补偿条形复合腔半导体激光器阵列.这种列阵是由7个或9个非对称半腔长交叉错开的条形电极形成7个或9个复合腔结构,光束在腔中以交叉的方式耦合.从该结构列阵得到了直到1.6I_(th)、发散角... 详细信息

本文描述了一种新结构半导体激光器阵列——非对称补偿条形复合腔半导体激光器阵列.这种列阵是由7个或9个非对称半腔长交叉错开的条形电极形成7个或9个复合腔结构,光束在腔中以交叉的方式耦合.从该结构列阵得到了直到1.6I_(th)、发散角仅为3～4°的单瓣远场图样.

关键词：半导体激光器复合腔补偿条形