Structure and Electrical Characteristics of Zinc Oxide Thin Films Grown on Si (111) by Metal-organic Chemical Vapor Deposition

作     者：Yunfeng Wu Dongping Liu Naisen Yu Yuanda Liu Hongwei Liang Guotong Du 

作者机构：School of Physics and Optoelectronic Technology Dalian University of Technology School of Physics and Materials Engineering Dalian Nationalities University 

出 版 物：《Journal of Materials Science & Technology》 (材料科学技术（英文版）)

年 卷 期：2013年第29卷第9期

页      面：830-834页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：financially supported by the National Natural Science Foundation of China (Nos. 11175038 and 51102036) the Fundamental Research Funds for the Central Universities (No. DC110314) 

主　　题：ZnO thin films Metal-organic chemical vapor deposition Conductive atomic force microscopy Scanning electron microscopy 

摘      要：ZnO thin films were grown on Si （111） substrates by low-pressure metal-organic chemical vapor deposition. The crystal structures and electrical properties of as-grown sample were investigated by scanning electron microscopy （SEM） and conductive atomic force microscopy （C-AFM）. It can be seen that with increasing growth temperature, the surface morphology of ZnO thin films changed from flake-like to cobblestones-like structure. The current maps were simultaneously recorded with the topography, which was gained by C-AFM contact mode. Conductivity for the off-axis facet planes presented on ZnO grains enhanced. Measurement results indicate that the off-axis facet planes were more electrically active than the c-plane of ZnO flakes or particles probably due to lower Schottky barrier height of the off-axis facet planes.