检索结果-南通市图书馆

维普期刊数据库

Enhanced thermoelectric properties of n-type Bi_(2)O_(2)Se by KCl doping

在线全文

学校读者我要写书评

暂无评论

Journal of Advanced Ceramics 2023年第9期12卷 1767-1776页

作者： Zi-long Zhang Tao Wang Mohammad Nisar Yue-xing Chen Fu Li Shuo Chen guang-xing liang Ping Fan Zhuang-hao Zheng Shenzhen Key Laboratory of Advanced Thin Films and Applications Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen 518060China

Bi_(2)O_(2)Se is considered one of the most promising thermoelectric(TE)materials for combining with p-type BiCuSeO in a TE module given its unique chemical and thermal ***,the enhancement of its dimensionless figure of merit,zT value,remains a challenge because of its low electrical ***,we introduce KCl into Bi_(2)O_(2)Se,synthesized by solid-state reaction and spark plasma sintering method,to improve its TE *** synthesized samples show an outstanding enhancement in electrical conductivity,carrier concentration,and power factor after KCl *** Bi_(2)O_(2)Se-based sample with a 0.05%KCl doping content possesses a high zT value of~0.58 at 773 K,which is over 50%enhancement compared with the pristine Bi_(2)O_(2)Se *** also prove that the K element substitutes the Bi site,and Cl replaces the Se site by X-ray diffraction results and density functional theory calculation,supporting that K can improve the electrical conductivity by the position of Fermi level which is above the conduction band *** and theoretical results indicate the success of co-doping with a small amount of KCl and show a huge potential of this novel method for Bi_(2)O_(2)Se TE performance improvement.

关键词： thermoelectric(TE)materials Bi_(2)O_(2)Se KCl co-doping figure of merit(zT)

Realizing high thermoelectric performance in n-type Bi_(2)Te_(3)based thin films via post-selenization diffusion

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Journal of Materiomics 2023年第4期9卷 618-625页

作者： Yue-xing Chen Jun-Ze Zhang Mohammad Nisar Adeel Abbas Fu Li guang-xing liang Ping Fan Zhuang-Hao Zheng Shenzhen Key Laboratory of Advanced Thin Films and Applications Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China

Thermoelectric thin film has attracted a lot of attention due to its potential in fabricating micropower generator in chip sensors for internet of things(IoT).However,the undeveloped performance of n-type thermoelectric thin film limits its widely *** this work,a facile post-selenization diffusion reaction method is employed to introduce Se into Bi_(2)Te_(3)thin films,in order to optimize the carrier transport *** and theoretical calculation results indicate that the carrier concentration decreases and density of states increases after Se doping,leading to the enhancement of Seebeck ***,adjusting the diffusion reaction temperature can maintain the carrier concentration while increasing the mobility simultaneously,resulting in a high power factor of 1.5 mW/(m·K^(2)),which is eight times higher than that of the pristine Bi_(2)Te_(3)thin ***,a thin film device fabricated by the present Se-doped Bi_(2)Te_(3)thin films shows the highest output power of 60.20 nW under the temperature difference of 37 K,indicating its potential for practical use.

关键词： Thermoelectric Thin film Magnetron sputtering Bie-Tee-Se

Realizing high thermoelectric performance via selective resonant doping in oxyselenide BiCuSeO

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Nano Research 2023年第1期16卷 1679-1687页

作者： Yue-xing Chen Wenning Qin Adil Mansoor Adeel Abbas Fu Li guang-xing liang Ping Fan Muhammad Usman Muzaffar Bushra Jabar Zhen-hua Ge Zhuang-hao Zheng F1 Shenzhen Key Laboratory of Advanced Thin Films and Applications Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen 518060China Faculty of Materials and Manufacturing Beijing University of TechnologyBeijing 100124China International Center for Quantum Design of Functional Materials(ICQD) Hefei National Laboratory for Physical Sciences at Microscale(HFNL)and CAS Center for Excellence in Quantum Information and Quantum PhysicsUniversity of Science and Technology of ChinaHefei 230026China Faculty of Materials Science and Engineering Kunming University of Science and TechnologyKunming 650093China

Tuning the charge carrier concentration is imperative to optimize the thermoelectric(TE)performance of a *** BiCuSeO based oxyselenides,doping efforts have been limited to optimizing the carrier *** the present work,dual-doping of In and Pb at Bi site is introduced for p-type BiCuSeO to realize the electric transport channels with intricate band characteristics to improve the power factor(PF).Herein,the impurity resonant state is realized via doping of resonant dopant In over Pb,where Pb comes forward to optimize the Fermi energy in the dual-doped BiCuSeO system to divulge the significance of complex electronic *** manifold roles of dual-doping are used to adjust the elevation of the PF due to the significant enhancement in electrical ***,the combined experimental and theoretical study shows that the In/Pb dual doping at Bi sites gently reduces bandgap,introduces resonant doping states with shifting down the Fermi level into valence band(VB)with a larger density of state,and thus causes to increase the carrier concentration and effective mass(m*),which are favorable to enhance the electronic transport *** a result,both improved ZTmax=0.87(at 873 K)and high ZTave=0.5(at 300–873 K)are realized for InyBi(1−x)−yPbxCuSeO(where x=0.06 and y=0.04)*** obtained results successfully demonstrate the effectiveness of the selective dual doping with resonant dopant inducing band manipulation and carrier engineering that can unlock new prospects to develop high TE materials.

关键词： thermoelectric material BiCuSeO dual-doping power factor figure of merit

Ultrahigh thermoelectric properties of p‐type Bi_(x)Sb_(2−x)Te_(3) thin films with exceptional flexibility for wearable energy harvesting

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Carbon Energy 2024年第8期6卷 273-284页

作者： Zhuang‐Hao Zheng Yi‐Ming Zhong Yi‐Liu Li Mohammad Nisar Adil Mansoor Fu Li Shuo Chen guang‐xing liang Ping Fan Dongyan Xu Meng Wei Yue‐xing Chen Shenzhen Key Laboratory of Advanced Thin Films and Applications Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhenChina Department of Mechanical and Automation Engineering The Chinese University of Hong KongSha TinChina

Use of a flexible thermoelectric source is a feasible approach to realizing selfpowered wearable electronics and the Internet of *** thin films are promising candidates for fabricating flexible power supply,but obtaining highthermoelectric‐performance thin films remains a big *** the present work,a p‐type Bi_(x)Sb_(2−x)Te_(3) thin film is designed with a high figure of merit of 1.11 at 393 K and exceptional flexibility(less than 5%increase in resistance after 1000 cycles of bending at a radius of∼5 mm).The favorable comprehensive performance of the Bi_(x)Sb_(2−x)Te_(3) flexible thin film is due to its excellent crystallinity,optimized carrier concentration,and low elastic modulus,which have been verified by experiments and theoretical ***,a flexible device is fabricated using the prepared p‐type Bi_(x)Sb_(2−x)Te_(3) and n‐type Ag_(2)Se thin ***,an outstanding power density of∼1028μWcm^(−2)is achieved at a temperature difference of 25 *** work extends a novel concept to the fabrication of highperformance flexible thin films and devices for wearable energy harvesting.

关键词： Bi_(x)Sb_(2−x)Te_(3) electrical transport properties flexibility thermoelectric

In-situ growth of high-performance(Ag,Sn)co-doped CoSb_(3)thermoelectric thin films

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Journal of Materials Science & Technology 2021年第33期92卷 178-185页

作者： Zhuang-Hao Zheng Jun-Yu Niu Dong-Wei Ao Bushra Jabar Xiao-Lei Shi Xin-Ru Li Fu Li guang-xing liang Yue-xing Chen Zhi-Gang Chen Ping Fan Shenzhen Key Laboratory of Advanced Thin Films and Applications Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen 518060China Centre for Future Materials University of Southern QueenslandSpringfield CentralBrisbaneQueensland 4300Australia School of Mechanical and Mining Engineering The University of QueenslandSt LuciaBrisbaneQueensland 4072Australia

Owing to the unique features,such as mechanically robust,low-toxic,high stability,and high thermoelectric performance,CoSb_(3)-based skutterudite materials are among art-of-the state thermoelectric *** this work,we develop a facile in-situ method for the growth of well-crystallinity(Ag,Sn)co-doped CoSb_(3)thin *** preparation method can efficiently control the dopant concentration and distribution in the thin *** the density functional theory calculation and the experimental results suggest that Sn and Ag dopants trend to enter the lattice and preferentially fill interstitial ***,band structure calculation results suggest that the Fermi level moves into the conduction bands due to co-doping and eventually induces the increased electrical conductivity,which agrees with the optimization of carrier ***,an increase in the density of state after co-doping is responsible for the increased Seebeck *** a result,the power factors of(Ag,Sn)co-doped CoSb_(3)thin films are greatly enhanced,and the maximum power factor achieves over 0.3 m W m^(-1)K^(-2)at 623 K,which is almost two times than that of the un-doped CoSb_(3)*** microstructures,including Sb vacancies and Ag/Sn interstitial atoms as point defects,and a high density of lattice distortions coupled with nano-sized Ag-rich grains,lead to all scale phonon *** a result,a reduced thermal conductivity of~0.28 W m^(-1)K^(-1)and a maximum ZT of~0.52 at 623 K are obtained from(Ag,Sn)co-doped CoSb_(3)thin *** study indicates our facile in-situ growth can be used to develop high-performance dual doped CoSb_(3)thins.

关键词： CoSb_(3)thin films Thermoelectric Magnetron sputtering Co-doping

维普期刊数据库

Time-dependence of cardiomyocyte differentiation disturbed by peroxi-some proliferator-activated receptor a inhibitor GW6471 in murine embryonic stem cells in vitro

在线全文

学校读者我要写书评

暂无评论

Acta Pharmacologica Sinica 2007年第5期28卷 634-642页

作者： Ling DING xing-guang liang Yi-jia LOU Institute of Pharmacology and Toxicology and Biochemical Pharmaceutics,College of Pharmaceutical Sciences,Zhejiang University,Hangzhou 310058,China Institute of Pharmacology and Toxicology and Biochemical Pharmaceutics College of Pharmaceutical Sciences Zhejiang University Hangzhou China

Aim:To investigate the possible roles of peroxisome proliferator-activated recep-tor α(PPARα) and the signal pathway regulating the transcription of PPARα inthe cardiomyocyte differentiation course of murine embryonic stem (ES) cells ***:The expression of PPARα during cardiomyocyte differentiationwas analyzed using both Western blotting and *** genes and sarcomeric proteins were evaluated when embryoid bodieswere challenged with PPARα specific inhibitor GW6471 at different time *** phosphorylation of p38 mitogen-activated protein kinase (MAPK) was stud-ied in the differentiation process,and its specific inhibitor SB203580 was em-ployed to study the function of p38 MAPK on cardiac differentiation and theexpression of PPARα.Results:The expression of PPARα was observed to be ata low level in undifferentiated ES cells and markedly induced with the appearanceof beating *** inhibition of PPARα by its specific inhibitor GW6471(1×10-5mol/L) significantly prevented cardiomyocyte differentiation and resultedin the reduced expression of cardiac sarcomeric proteins (ie α-actinin,troponin-T)and specific genes (ie α-MHC,MLC2v) in a time-dependent *** the differ-entiation course,p-p38 MAPK was maintained at a high level from d 3 followed bya decrease from d *** inhibition of the p38 MAPK pathway by SB203580between d 3 and d 7 efficiently prevented cardiomyocyte differentiation and re-suited in the capture of the upregulation of PPARα.Conclusion:Taken together,these results showed a close association between PPARα and cardiomyocytedifferentiation in vitro,and p38 MAPK was partly responsible for the regulationof PPARα.

关键词： peroxisome proliferator-activated receptor α p38 MAPK embryonic stem cells cardiomyocytes differentiation

Icariin promotes expression of PGC-1α,PPARα,and NRF-1 during cardiomyocyte differentiation of murine embryonic stem cells in vitro

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Acta Pharmacologica Sinica 2007年第10期28卷 1541-1549页

作者： Ling DING,xing-guang liang,Dan-yan ZHU,Yi-jia LOU~2Institute of Pharmacology and Toxicology and Biochemical Pharmaceutics,College of Pharmaceutical Sciences,Zhejiang University,Hangzhou 310058,China Institute of Pharmacology and Toxicology and Biochemical Pharmaceutics College of Pharmaceutical Sciences Zhejiang University Hangzhou China

Aim:To investigate the effect of icariin on the expression of peroxisome proliferator-activated receptor γ coactivator-1 alpha (PGC-1 α),peroxisome proliferator-activated receptor alpha (PPARα),and nuclear respiratory factor 1 (NRF-1) oncardiomyocyte differentiation of murine embryonic stem (ES) cells in ***:The cardiomyocytes derived from murine ES cells were verified byimmunocytochemistry using confocal laser scanning ***-specific sarcomeric proteins (ie α-actinin,troponin T) were evaluated when em-bryoid bodies (EB) were treated with icariin or retinoid *** expression ofPGC-1α,PPARα,and NRF-1 were analyzed using both semiquantitative RT-PCRand Western blotting in cardiomyocyte *** phosphorylation ofthe p38 mitogen-activated protein kinase (MAPK) was studied in the differentia-tion process,and its specific inhibitor SB203580 was employed to confirm thefunction of the p38 MAPK on icariin-induced cardiac ***:The application of icariin significantly induced the cardiomyocyte differentiationof EB as indicated by the promoted expression of α-actinin and troponin *** of PGC-1α,PPARα,and NRF-1 increased coincidently in early differ-entiation and the increase was dose-dependently upregulated by icariin *** phosphorylation of the p38 MAPK peaked on d 6 and decreased after d 8,andthe activation was further enhanced and prolonged when the EB were subjectedto icariin,which was concurrent with the elevation of PGC-1α,PPARα,and ***,the inhibition of the p38 MAPK pathway by SB203580 efficientlyabolished icariin-stimulated cardiomyocyte differentiation and resulted in the cap-ture of the upregulation of PGC-1α,PPARα,and ***:Takentogether,icariin promoted the expression of PGC-1α,PPARα,and NRF-1 duringcardiomyocyte differentiation of murine ES cells in vitro and the effect was partlyresponsible for the activation of the p38 MAPK.

关键词： icariin PGC-lα PPARα NRF-1 mitochondrial cardiomyocytes embryonic stem cells differentiation

Self-powered broadband kesterite photodetector with ultrahigh specific detectivity for weak light applications

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

SusMat 2023年第5期3卷 682-696页

作者： guang-xing liang Chuan-Hao Li Jun Zhao Yi Fu Zi-Xuan Yu Zhuang-Hao Zheng Zheng-Hua Su Ping Fan Xiang-Hua Zhang Jing-Ting Luo Liming Ding Shuo Chen Shenzhen Key Laboratory of Advanced Thin Films and Applications Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhenChina Institut des Sciences Chimiques de Rennes Universite de RennesRennesFrance Center for Excellence in Nanoscience(CAS) Key Laboratory of Nanosystem and Hierarchical Fabrication(CAS)National Center for Nanoscience and TechnologyBeijingChina

Kesterite Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)is a promising candidate for photodetector(PD)applications thanks to its excellent optoelectronic *** this work,a green solution-processed spin coating and selenization-processed thermodynamic or kinetic growth of high-quality narrow bandgap kesterite CZTSSe thin film is developed.A self-powered CZTSSe/CdS thin-film PD is then successfully *** optimization of light absorber and heterojunction interface,especially tailoring the defect and carrier kinetics,it can achieve broadband response from300 to 1300 nm,accompaniedwith a high responsivity of 1.37A/W,specific detectivity(D*)up to 4.0×10^(14)Jones under 5 nW/cm^(2),a linear dynamic range(LDR)of 126 dB,and a maximum Ilight/Idark ratio of 1.3×10^(8)within the LDR,and ultrafast response speed(rise/decay time of 16 ns/85 ns),representing the leading-level performance to date,which is superior to those of commercial andwell-researched ***,an imaging system with a 905nm laser is built for weak light response evaluation,and can respond to 718 pW weak light and infrared imaging at a wavelength as low as 5 nW/*** has also been employed for photoplethysmography detection of pulsating signals at both the finger and wrist,presenting obvious arterial blood volume changes,demonstrating great application potential in broadband and weak light photodetection scenarios.

关键词： detectivity kesterite photodetector thin film weak light detection

Sb2Se3-based photocathodes for hydrogen production via photoelectrochemical water splitting

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Sb2Se3-based photocathodes for hydrogen production via photo...