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Science China(Information Sciences) 2024年第1期67卷 312-313页

作者： Huan LIU Qiyu YANG Chengji JIN Jiajia CHEN Lulu CHOU Xiao YU Yan LIU genquan han Research Center for Intelligent Chips School of Microelectronics Xidian University

The steep subthreshold swing (SS) could be achieved in negative capacitance field-effect transistors (NCFET) to reduce power dissipation in modern electronics. Polycrystalline Hf O2-based ferroelectric materials have attracted great interest due to their better thickness scalability and CMOS process compatibility [1].

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Solid-state non-volatile memories based on vdW heterostructure-based vertical-transport ferroelectric field-effect transistors

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Science China(Information Sciences) 2024年第6期67卷 198-206页

作者： Qiyu YANG Zheng-Dong LUO Fei XIAO Junpeng ZhanG Dawei ZhanG Dongxin TAN Xuetao GAN Yan LIU Zhufei CHU Yinshui XIA genquan han hangzhou Institute of Technology Xidian University State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian University School of Artificial Intelligence Xidian University School of Materials Science and Engineering University of New South Wales (UNSW) Sydney ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET) University of New South Wales (UNSW) Sydney Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technologyand Shaanxi Key Laboratory of Optical Information TechnologySchool of Physical Science and TechnologyNorthwestern Polytechnical University Faculty of Electrical Engineering and Computer Science Ningbo University

Driven by the explosive development of data-centric computation applications, it is becoming urgent to develop in-memory computing devices that are beyond the von Neumann architecture with an arrangement of separated logic and memory components. The transistor-type solid-state non-volatile memories,such as ferroelectric field-effect transistors(Fe FETs), have long been regarded as a competitive candidate for future in-memory computing architectures. However, the density scaling towards high-density arrays would require advanced Fe FETs with reduced footprints, which remains a great challenge so far. Here, a vertical-transport(VT) Fe FET that flips the charge transport channel perpendicular to the substrate plane is proposed, in which a ferroelectric gate and a van der Waals(vd W) heterojunction channel are vertically integrated, effectively reducing the device footprints. The proposed VT-Fe FET shows not only the robust binary non-volatile memory states but also several key synaptic functionalities at the device level. An artificial neural network with supervised learning was simulated based on the device conductance switching properties,showing excellent classification accuracy for the MNIST handwritten digits. These findings suggest that the proposed VT-Fe FET could offer a new solution for future non-volatile memories as well as more advanced neuromorphic systems.

关键词： vdW heterostructure non-volatile memory vertical-transport transistor ferroelectric field-effect transistor memristive devices

Enhanced fatigue resistance of ferroelectric Al0.65Sc0.35N deposited by physical vapor deposition

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Science China(Information Sciences) 2024年第5期67卷 335-336页

作者： Yang LI Danyang YAO Yan LIU Zhi JIANG Ruiqing WANG Xu RAN Jiuren ZHOU Qikun WANG Guoqiang WU genquan han School of Microelectronics Xidian University hangzhou Institute of Technology Xidian University Ultratrend Technologies Inc. Emerging Device and Chip Laboratory Institute of Technological Sciences Wuhan University

Aluminum scandium nitride(AlScN), a Ⅲ-Ⅴ ternary semiconductor, has been recognized as an innovative and promising ferroelectric material in emerging research. Among the characteristics of ferroelectric material, fatigue resistance is a critical measure of the endurance of ferroelectric films and represents an inherent challenge in the pursuit of practical applications.

关键词： Physical vapor deposition

Room-temperature ferromagnetism and piezoelectricity in metalfree 2D semiconductor crystalline carbon nitride

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Nano Research 2024年第6期17卷 5670-5679页

作者： Yong Wang Dingyi Yang Wei Xu Yongjie Xu Yu Zhang Zixuan Cheng Yizhang Wu Xuetao Gan Wei Zhong Yan Liu genquan han Yue Hao Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of MicroelectronicsAcademy of Advanced Interdisciplinary ResearchXidian UniversityXi’an 710071China Emerging Device and Chip Laboratory Hangzhou Institute of TechnologyXidian UniversityHangzhou 311200China INRS Centre for Energy Materials and Telecommunications1650 Boul.Lionel BouletVarennesQC J3X 1P7Canada National Laboratory of Solid State Microstructures Collaborative Innovation Center of Advanced Microstructures and Jiangsu Provincial Key Laboratory for NanotechnologyNanjing UniversityNanjing 210093China School of Education Jiangsu Open UniversityNanjing 210036China Department of Physics Shaanxi University of Science and TechnologyXi’an 710021China Department of Applied Physical Sciences The University of North Carolina at Chapel HillChapel HillNC 27514USA Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technologyand Shaanxi Key Laboratory of Optical Information TechnologySchool of Physical Science and TechnologyNorthwestern Polytechnical UniversityXi'an 710129 China

Two-dimensional(2D)materials that combine ferromagnetic,semiconductor,and piezoelectric properties hold significant potential for both fundamental research and spin electronic devices.However,the majority of reported 2D ferromagnetic-semiconductor-piezoelectric materials rely on d-electron systems,which limits their practical applications due to a Curie temperature lower than room temperature(RT).Here,we report a high-crystallinity carbon nitride(CCN)material based on sp-electrons using a chemical vapor deposition *** exhibits a band gap of 1.8 eV and has been confirmed to possess substantial in-plane and out-of-plane piezoelectricity.Moreover,we acquired clear evidences of ferromagnetic behavior at room temperature.Extensive structural characterizations combined with theoretical calculations reveal that incorporating structural oxygen into the highly ordered heptazine structure causes partial substitution of nitrogen sites,which is primarily responsible for generating room-temperature ferromagnetism and piezoelectricity.As a result,the strain in wrinkles can effectively modulate the domain behavior and piezoelectric potential at room temperature.The addition of RT ferromagnetic-semiconductor-piezoelectric material based on sp-electrons to the family of two-dimensional materials opens up numerous possibilities for novel applications in fundamental research and spin electronic devices.

关键词： crystallinity carbon nitride room-temperature ferromagnetism piezoelectricity magnetic force microscopy density functional theory(DFT)calculations

Effects of the VGS sweep range on the short channel effect in negative capacitance FinFETs

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Science China(Information Sciences) 2024年第6期 463-464页

作者： Fan ZhanG Zhaohao ZhanG Jiaxin YAO Qingzhu ZhanG Gaobo XU Zhenhua WU Huan LIU genquan han Yan LIU Huaxiang YIN Integrated Circuit Advanced Process R&D Center State Key Lab of Fabrication Technologies for Integrated CircuitsInstitute of Microelectronics of Chinese Academy of Sciences School of Microelectronics Xidian University School of Integrated Circuits University of Chinese Academy of Sciences

As the CMOS technology scaling is reaching fundamental limits,there is a substantial demand for energy-efficient devices with lower operating voltage.Negative capacitance field-effect transistors （NCFETs） exhibit the capability to amplify the gate voltage and become promising candidates for future advanced process nodes.Ferroelectric （FE） HfO2-based materials,

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Superjunction 4H-SiC trench-gate IGBT with an integrated clamping PN diode

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The Journal of China Universities of Posts and Telecommunications 2024年第2期31卷 3-9,27页

作者： Huang Yi Wang Xuecheng Gao Sheng Liu Bin Zhang Hongsheng han genquan School of Optoelectronic Engineering Chongqing University of Posts and TelecommunicationsChongqing 400065China School of Electronic Science and Engineering Nanjing UniversityNanjing 210008China School of Microelectronics Xidian UniversityXi'an 710126China

In this paper,a novel superjunction 4H-silicon carbide(4H-SiC)trench-gate insulated-gate bipolar transistor(IGBT)featuring an integrated clamping PN diode between the P-shield and emitter(TSD-IGBT)is designed and theoretically studied.The heavily doping superjunction layer contributes to a low specific on-resistance,excellent electric field distribution,and quasi-unipolar drift current.The anode of the clamping diode is in floating contact with the P-shield.In the on-state,the potential of the P-shield is raised to the turn-on voltage of the clamping diode,which prevents the hole extraction below the N-type carrier storage layer(NCSL).Additionally,during the turn-off transient,once the clamping diode is turned on,it also promotes an additional hole extraction path.Furthermore,the potential dropped at the semiconductor near the trench-gate oxide is effectively reduced in the off-state.

关键词： 4H-silicon carbide(4H-SiC) trench-gate superjunction clamping diode

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Trench gate GaN IGBT with controlled hole injection efficiency

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The Journal of China Universities of Posts and Telecommunications 2024年第2期31卷 10-16页

作者： Huang Yi Li Yueyue Gao Sheng Wang Qi Liu Bin han genquan School of Optoelectronic Engineering Chongqing University of Posts and TelecommunicationsChongqing 400065China School of Electronic Science and Engineering Nanjing UniversityNanjing 210008China School of Microelectronics Xidian UniversityXi’an 710126China

In this paper,a novel trench gate gallium nitride(GaN)insulated gate bipolar transistor(GaN IGBT),in which the collector is divided into multiple regions to control the hole injection efficiency,is designed and theoretically studied.The incorporation of a P+/P-multi-region alternating structure in the collector region mitigates hole injection within the collector region.When the device is in forward conduction,the conductivity modulation effect results in a reduced storage of carriers in the drift region.As a result,the number of carriers requiring extraction during device turn-off is minimized,leading to a faster turn-off speed.The results illustrate that the GaN IGBT with controlled hole injection efficiency(CEH GaN IGBT)exhibits markedly enhanced performance compared to conventional GaN IGBT,showing a remarkable 42.2%reduction in turn-off time and a notable 28.5%decrease in turn-off loss.

关键词： gallium nitride insulated gate bipolar transistor(GaN IGBT) hole injection trench gate turn-off loss

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Ferroelectric-like behaviors of metal-insulator-metal with amorphous dielectrics

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Science China(Information Sciences) 2023年第10期66卷 178-183页

作者： Huan LIU Jiajia CHEN Chengji JIN Xiao YU Yan LIU genquan han Research Center for Intelligent Chips Zhejiang Lab School of Microelectronics Xidian University

In this paper, unique ferroelectric-like characteristics in amorphous(a-) ZrO2-based devices enabled by mobile ions are systematically investigated at room temperature and cryogenic. The physical origin of the ferroelectric-like behaviors of the metal/a-ZrO2/metal capacitor is confirmed to be the migration of ions exhibiting strong frequency dependency due to the limited velocity of the mobile ions, which is proven by the comparison between experimental results and theoretical analysis. The ferroelectric-type hysteresis will be reduced sharply with the decrease of the temperature, which is essentially different from the reported doped-HfO2FeFET. This further confirms that the origin of the ferroelectric-like characteristics is the migration and redistribution of the mobile ions.

关键词： ferroelectric-like mobile ion amorphous dielectric ZrO$_{2}$ temperature

Impact of polarization switching on the effective carrier mobility of HfZrOx ferroelectric field-effect transistor

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Science China(Information Sciences) 2023年第6期66卷 305-306页

作者： Fenning LIU Yue PENG Wenwu XIAO Yan LIU Xiao YU genquan han School of Microelectronics Xidian University Research Center for Intelligent Chips Xi'an UniIC Semiconductors hangzhou Institute of Technology Xidian University

Doped-HfO2ferroelectrics have attracted tremendous research interest for non-volatile memory and memory-incomputing applications due to their CMOS compatibility,advantages of non-destructive reading,and low power cons... 详细信息

关键词： Zirconium compounds

Design technology co-optimization towards sub-3 nm technology nodes

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Journal of Semiconductors 2021年第2期42卷 6-8页

作者： genquan han Yue Hao School of Microelectronics Xidian UniversityXi’an 710071China

Over the past half century,Moore’s Law has played a crucial role in the development of the semiconductor field,which depends on straightforwardly dimensional scaling with approximately a two-year cadence.Significant benefits of performance,power,area,and cost(PPAC)in microchips are expected at each technology node.However,aggressive pitchbased scaling by resolution enhancement techniques becomes increasingly challenging to sustain.

关键词： scaling optimization straight

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