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Trench gate GaN IGBT with controlled hole injection efficiency

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The Journal of China Universities of Posts and Telecommunications 2024年第2期31卷 10-16页

作者： Huang Yi Li Yueyue Gao Sheng Wang Qi Liu Bin han genquan School of Optoelectronic Engineering Chongqing University of Posts and TelecommunicationsChongqing 400065China School of Electronic Science and Engineering Nanjing UniversityNanjing 210008China School of Microelectronics Xidian UniversityXi’an 710126China

In this paper,a novel trench gate gallium nitride(GaN)insulated gate bipolar transistor(GaN IGBT),in which the collector is divided into multiple regions to control the hole injection efficiency,is designed and theoretically *** incorporation of a P+/P-multi-region alternating structure in the collector region mitigates hole injection within the collector *** the device is in forward conduction,the conductivity modulation effect results in a reduced storage of carriers in the drift *** a result,the number of carriers requiring extraction during device turn-off is minimized,leading to a faster turn-off *** results illustrate that the GaN IGBT with controlled hole injection efficiency(CEH GaN IGBT)exhibits markedly enhanced performance compared to conventional GaN IGBT,showing a remarkable 42.2%reduction in turn-off time and a notable 28.5%decrease in turn-off loss.

关键词： gallium nitride insulated gate bipolar transistor(GaN IGBT) hole injection trench gate turn-off loss

维普期刊数据库

Sensing with extended gate negative capacitance ferroelectric field-effect transistors

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Chip 2024年第1期3卷 18-23页

作者： Honglei Xue Yue Peng Qiushi Jing Jiuren Zhou genquan han Wangyang Fu Key Laboratory of Advanced Materials(MOE) School of Materials Science and EngineeringTsinghua UniversityBeijing 100084China School of Microelectronics Xidian UniveristyXi’an 710071China

With major signal analytical elements situated away from the measurement environment,extended gate(EG)ion-sensitive fieldeffect transistors(ISFETs)offer prospects for whole chip circuit design and system integration of chemical *** this work,a highly sensitive and power-efficient ISFET was proposed based on a metal-ferroelectric-insulator gate stack with negative capacitance–induced super-steep subthreshold swing and ferroelectric memory *** with a remotely connected EG electrode,the architecture facilitates diverse sensing functions for future establishment of smart biochemical sensor platforms.

关键词： Extended gate Ion-sensitive field-effect transistors Negative capacitance Sub-60 mV/dec subthreshold swing Ferroelectric memory effect

Mobile-ionic FETs with ultra-scaled amorphous dielectric achieving ferroelectric behaviors and sub-kT/q swing with temperature down to 77 K

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Science China(Information Sciences) 2024年第1期67卷 312-313页

作者： Huan LIU Qiyu YANG Chengji JIN Jiajia CHEN Lulu CHOU Xiao YU Yan LIU genquan han Research Center for Intelligent Chips School of Microelectronics Xidian University

The steep subthreshold swing (SS) could be achieved in negative capacitance field-effect transistors (NCFET) to reduce power dissipation in modern electronics. Polycrystalline Hf O2-based ferroelectric materials have attracted great interest due to their better thickness scalability and CMOS process compatibility [1].

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Effects of the VGS sweep range on the short channel effect in negative capacitance FinFETs

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Science China(Information Sciences) 2024年第6期67卷 463-464页

作者： Fan ZhanG Zhaohao ZhanG Jiaxin YAO Qingzhu ZhanG Gaobo XU Zhenhua WU Huan LIU genquan han Yan LIU Huaxiang YIN Integrated Circuit Advanced Process R&D Center State Key Lab of Fabrication Technologies for Integrated CircuitsInstitute of Microelectronics of Chinese Academy of Sciences School of Microelectronics Xidian University School of Integrated Circuits University of Chinese Academy of Sciences

As the CMOS technology scaling is reaching fundamental limits,there is a substantial demand for energy-efficient devices with lower operating *** capacitance field-effect transistors （NCFETs） exhibit the capability to amplify the gate voltage and become promising candidates for future advanced process *** （FE） HfO2-based materials,

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Solid-state non-volatile memories based on vdW heterostructure-based vertical-transport ferroelectric field-effect transistors

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Science China(Information Sciences) 2024年第6期67卷 198-206页

作者： Qiyu YANG Zheng-Dong LUO Fei XIAO Junpeng ZhanG Dawei ZhanG Dongxin TAN Xuetao GAN Yan LIU Zhufei CHU Yinshui XIA genquan han hangzhou Institute of Technology Xidian University State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian University School of Artificial Intelligence Xidian University School of Materials Science and Engineering University of New South Wales (UNSW) Sydney ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET) University of New South Wales (UNSW) Sydney Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technologyand Shaanxi Key Laboratory of Optical Information TechnologySchool of Physical Science and TechnologyNorthwestern Polytechnical University Faculty of Electrical Engineering and Computer Science Ningbo University

Driven by the explosive development of data-centric computation applications, it is becoming urgent to develop in-memory computing devices that are beyond the von Neumann architecture with an arrangement of separated logic and memory components. The transistor-type solid-state non-volatile memories,such as ferroelectric field-effect transistors(Fe FETs), have long been regarded as a competitive candidate for future in-memory computing architectures. However, the density scaling towards high-density arrays would require advanced Fe FETs with reduced footprints, which remains a great challenge so far. Here, a vertical-transport(VT) Fe FET that flips the charge transport channel perpendicular to the substrate plane is proposed, in which a ferroelectric gate and a van der Waals(vd W) heterojunction channel are vertically integrated, effectively reducing the device footprints. The proposed VT-Fe FET shows not only the robust binary non-volatile memory states but also several key synaptic functionalities at the device level. An artificial neural network with supervised learning was simulated based on the device conductance switching properties,showing excellent classification accuracy for the MNIST handwritten digits. These findings suggest that the proposed VT-Fe FET could offer a new solution for future non-volatile memories as well as more advanced neuromorphic systems.

关键词： vdW heterostructure non-volatile memory vertical-transport transistor ferroelectric field-effect transistor memristive devices

Enhanced fatigue resistance of ferroelectric Al0.65Sc0.35N deposited by physical vapor deposition

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Science China(Information Sciences) 2024年第5期67卷 335-336页

作者： Yang LI Danyang YAO Yan LIU Zhi JIANG Ruiqing WANG Xu RAN Jiuren ZHOU Qikun WANG Guoqiang WU genquan han School of Microelectronics Xidian University hangzhou Institute of Technology Xidian University Ultratrend Technologies Inc. Emerging Device and Chip Laboratory Institute of Technological Sciences Wuhan University

Aluminum scandium nitride(AlScN), a Ⅲ-Ⅴ ternary semiconductor, has been recognized as an innovative and promising ferroelectric material in emerging research. Among the characteristics of ferroelectric material, fatigue resistance is a critical measure of the endurance of ferroelectric films and represents an inherent challenge in the pursuit of practical applications.

关键词： Physical vapor deposition

Room-temperature ferromagnetism and piezoelectricity in metalfree 2D semiconductor crystalline carbon nitride

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Nano Research 2024年第6期17卷 5670-5679页

作者： Yong Wang Dingyi Yang Wei Xu Yongjie Xu Yu Zhang Zixuan Cheng Yizhang Wu Xuetao Gan Wei Zhong Yan Liu genquan han Yue Hao Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of MicroelectronicsAcademy of Advanced Interdisciplinary ResearchXidian UniversityXi’an 710071China Emerging Device and Chip Laboratory Hangzhou Institute of TechnologyXidian UniversityHangzhou 311200China INRS Centre for Energy Materials and Telecommunications1650 Boul.Lionel BouletVarennesQC J3X 1P7Canada National Laboratory of Solid State Microstructures Collaborative Innovation Center of Advanced Microstructures and Jiangsu Provincial Key Laboratory for NanotechnologyNanjing UniversityNanjing 210093China School of Education Jiangsu Open UniversityNanjing 210036China Department of Physics Shaanxi University of Science and TechnologyXi’an 710021China Department of Applied Physical Sciences The University of North Carolina at Chapel HillChapel HillNC 27514USA Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technologyand Shaanxi Key Laboratory of Optical Information TechnologySchool of Physical Science and TechnologyNorthwestern Polytechnical UniversityXi'an 710129 China

Two-dimensional(2D)materials that combine ferromagnetic,semiconductor,and piezoelectric properties hold significant potential for both fundamental research and spin electronic ***,the majority of reported 2D ferromagnetic-semiconductor-piezoelectric materials rely on d-electron systems,which limits their practical applications due to a Curie temperature lower than room temperature(RT).Here,we report a high-crystallinity carbon nitride(CCN)material based on sp-electrons using a chemical vapor deposition *** exhibits a band gap of 1.8 eV and has been confirmed to possess substantial in-plane and out-of-plane ***,we acquired clear evidences of ferromagnetic behavior at room *** structural characterizations combined with theoretical calculations reveal that incorporating structural oxygen into the highly ordered heptazine structure causes partial substitution of nitrogen sites,which is primarily responsible for generating room-temperature ferromagnetism and *** a result,the strain in wrinkles can effectively modulate the domain behavior and piezoelectric potential at room *** addition of RT ferromagnetic-semiconductor-piezoelectric material based on sp-electrons to the family of two-dimensional materials opens up numerous possibilities for novel applications in fundamental research and spin electronic devices.

关键词： crystallinity carbon nitride room-temperature ferromagnetism piezoelectricity magnetic force microscopy density functional theory(DFT)calculations

Broadband light-active optoelectronic FeFET memory for in-sensor non-volatile logic

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Science China(Information Sciences) 2024年第9期67卷 346-347页

作者： Yong ZhanG Dongxin TAN Cizhe FANG Zheng-Dong LUO Qiyu YANG Qiao ZhanG Yu ZhanG Xuetao GAN Yan LIU Yue HAO genquan han State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian University hangzhou Institute of Technology Xidian University Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technologyand Shaanxi Key Laboratory of Optical Information Technology School of Physical Science and TechnologyNorthwestern Polytechnical University

Machine vision has become crucial in the modern intelligence era, especially in rapidly developing applications such as autonomous vehicles and robotic visual sensors [1].With the ever-increasing requirements of visua... 详细信息

关键词： Ferroelectric RAM

Evidence for reversible oxygen ion movement during electrical pulsing:enabler of emerging ferroelectricity in binary oxides

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Materials Futures 2024年第3期3卷 195-205页

作者： Huan Liu Fei Yu Bing Chen Zheng-Dong Luo Jiajia Chen Yong Zhang Ze Feng Hong Dong Xiao Yu Yan Liu genquan han Yue Hao State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian UniversityXi’an 710071People’s Republic of China Research Center for Intelligent Chips and Devices Zhejiang LabHangzhou 311121People’s Republic of China Engineering Research Center of Thin Film Optoelectronics Technology Ministry of EducationNankai UniversityTianjin 300350People’s Republic of China

Ferroelectric HfO_(2)-based materials and devices show promising potential for applications in information technology but face challenges with inadequate electrostatic control,degraded reliability,and serious variation in effective oxide thickness *** demonstrate a novel interface-type switching strategy to realize ferroelectric characteristics in atomic-scale amorphous binary oxide films,which are formed in oxygen-deficient conditions by atomic layer deposition at low *** approach can avoid the shortcomings of reliability degradation and gate leakage increment in scaling polycrystalline doped HfO_(2)-based *** theoretical modeling and experimental characterization,we show the following.(1)Emerging ferroelectricity exists in ultrathin oxide systems as a result of microscopic ion migration during the switching process.(2)These ferroelectric binary oxide films are governed by an interface-limited switching mechanism,which can be attributed to oxygen vacancy migration and surface defects related to electron(de)trapping.(3)Transistors featuring ultrathin amorphous dielectrics,used for non-volatile memory applications with an operating voltage reduced to±1 V,have also been experimentally *** findings suggest that this strategy is a promising approach to realizing next-generation complementary metal-oxide semiconductors with scalable ferroelectric materials.

关键词： ferroelectric binary oxide mobile ion amorphous dielectric nonvolatile memory