Trench gate GaN IGBT with controlled hole injection efficiency

作     者：Huang Yi Li Yueyue Gao Sheng Wang Qi Liu Bin Han Genquan 

作者机构：School of Optoelectronic EngineeringChongqing University of Posts and TelecommunicationsChongqing 400065China School of Electronic Science and EngineeringNanjing UniversityNanjing 210008China School of MicroelectronicsXidian UniversityXi’an 710126China 

出 版 物：《The Journal of China Universities of Posts and Telecommunications》 (中国邮电高校学报（英文版）)

年 卷 期：2024年第31卷第2期

页      面：10-16页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：the General Program of Natural Science Foundation of Chongqing(CSTB2023NSCQ-MSX0475) the Doctoral Research Start-up Fund of Chongqing University of Posts and Telecommunications(A2023-70) 

主　　题：gallium nitride insulated gate bipolar transistor(GaN IGBT) hole injection trench gate turn-off loss 

摘      要：In this paper,a novel trench gate gallium nitride(GaN)insulated gate bipolar transistor(GaN IGBT),in which the collector is divided into multiple regions to control the hole injection efficiency,is designed and theoretically *** incorporation of a P+/P-multi-region alternating structure in the collector region mitigates hole injection within the collector *** the device is in forward conduction,the conductivity modulation effect results in a reduced storage of carriers in the drift *** a result,the number of carriers requiring extraction during device turn-off is minimized,leading to a faster turn-off *** results illustrate that the GaN IGBT with controlled hole injection efficiency(CEH GaN IGBT)exhibits markedly enhanced performance compared to conventional GaN IGBT,showing a remarkable 42.2%reduction in turn-off time and a notable 28.5%decrease in turn-off loss.