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Influence of Recombination Centers on the Phase Portraits in Nanosized Semiconductor Films

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Journal of Modern Physics 2016年第13期7卷 1661-1667页

作者： g.fur gulyamov Abdurasul g. gulyamov Feruza R. Muhitdinova Namang.n Eng.neering.Pedag.g.cal Institute Namangan Uzbekistan Physico-technical Institute Academy of Sciences of Uzbekistan Tashkent Uzbekistan Namang.n State University Namangan Uzbekistan

Influence of recombination centers’ chang.s on the form of phase portraits has been studied. It has been shown that the shape of the phase portraits depends on the concentration of semiconductor materials’ recombina... 详细信息

关键词： Recombination Centers Phase Portrait g.neration of Charg. Carriers Recombination of Charg. Carriers Forbidden Zone Absorption Coefficient

Heating.of the Electrons and the Rectified Current at the Contacts That Are in an Alternating.Electromag.etic Field

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World Journal of Condensed Matter Physics 2015年第1期5卷 48-53页

作者： g. gulyamov M. g. Dadamirzaev Namang.n Eng.neering.Pedag.g.cal Institute Namangan Uzbekistan

The paper deals with the heating.of electrons and current rectification in contact, which is located in an alternating.electromag.etic field. It was found that the electrical component of the microwave (UHF) waves inside the p-n-junction was curved. This leads to the perpendicular component of the electric field of the microwave wave. This component modulates the heig.t of the potential barrier with the frequency of the microwave. In the p-n-junction, straig.tening.microwave current occurs. It is shown that the rectifying.contact in the microwave electromag.etic field is always an electromotive force. This is due to carrier heating.and straig.tening.microwave current. It is shown that electron heating.and straig.tening.of the microwave power will lead to hig.er ideality factor of the diode.

关键词： Hot Electrons The Microwave Field The Open Circuit Voltag. Short Circuit Current CVC p-n-Junction

On the Thermodynamics of a Two-Dimensional Electron g.s with Non-Parabolic Dispersion

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World Journal of Condensed Matter Physics 2016年第4期6卷 294-299页

作者： g. gulyamov B. T. Abdulazizov Pedag.g.cal Institute Namangan Uzbekistan Namang.n State University Namangan Uzbekistan

A thermodynamic density of states, electron density in the subband and the entropy of the g.s as function of the temperature and the total two-dimensional electron density are studied. Semiconductor conduction band dispersion is described by the simplified Kane model. Numerical simulation shows that with an increase in the total electron concentration, thermodynamic density of states at low temperatures chang.s abruptly and smoothes jumps at hig. temperatures. This chang. manifests itself in the peculiar thermodynamic characteristics. The results are used to interpret existing.experimental data.

关键词： Quantum Well Two-Dimensional Electron g.s Kane Model Subbands Statistics Entropy

The Use of Phase Portraits for the Study of the g.neration-Recombination Processes in Semiconductor

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Journal of Modern Physics 2015年第13期6卷 1921-1926页

作者： g.fur gulyamov A. g. gulyamov A. Q. Erg.shev B. T. Abdulazizov Namang.n Eng.neering.Pedag.g.cal Institute Namangan Uzbekistan Physico-Technical Institute Academy of Sciences of Uzbekistan Tashkent Uzbekistan Namang.n State University Namangan Uzbekistan

Theoretical investig.tion of g.neration-recombination processes in silicon, which has a lifetime of charg. carriers 10-3 s and capture cross sections of 10-16 sm2. For the study uses a method of phase portraits, which are widely used in the theory of vibrations. It is shown that the form of phase portraits strong.y depends on the frequency of exposure to the external variable deformation.

关键词： Phase Portraits The g.neration of Charg. Carriers The Recombination of Charg. Carriers

Simulation of the Temperature Dependence of the Density of States in a Strong.Mag.etic Field

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Journal of Modern Physics 2014年第8期5卷 680-685页

作者： g. gulyamov U. I. Erkaboev N. Yu. Sharibaev Namang.n Eng.neering.Pedag.g.cal Institute Namangan Uzbekistan

The temperature dependence of the density of states in strong.mag.etic fields. On the basis of the model constructed, a computer prog.am calculating.the density of electronic states in a quantizing.mag.etic field. Used new, based on quantum statistics, the approach to the calculation of the temperature dependence of the density of states in a strong.mag.etic field. Mathematical modeling.of the density of states using.the experimental values of a continuous density of states makes it possible to calculate the Landau levels.

关键词： Cyclotron Frequency and Effective Mass A Quantizing Mag.etic Field Landau Levels the Energ. Spectrum the Numerical Simulation and Experiment

Investig.tion of the Temperature Dependence of the Oscillation of the Mag.etic Susceptibility in Semiconductors

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Journal of Modern Physics 2014年第17期5卷 1974-1979页

作者： g. gulyamov U. I. Erkaboev N. Yu. Sharibaev Namang.n Eng.neering.Pedag.g.cal Institute Namangan Uzbekistan Namang.n Eng.neering.Technolog. Institute Namangan Uzbekistan

The temperature dependence of the mag.etic susceptibility oscillations semiconductors was considered in a quantizing.mag.etic field. With the help of mathematical modeling.of the thermal broadening.of the energ. levels, the temperature dependence of the de Haas-van Alphen effect in quantizing.mag.etic field was investig.ted. The influence of temperature on the de Haas-van Alphen with the help of free energ. of electrons ?in semiconductors was determined. Theoretical results of the mathematical simulation were compared with experimental data for bismuth. Using.the proposed model of the low-temperature?, hig.-temperature oscillation mag.etic susceptibility in semiconductors was calculated.

关键词： Density of States The Energ. Spectrum The Numerical Simulation and Experiment

Effect of Temperature and Band Nonparabolicity on Density of States of Two Dimensional Electron g.s

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Journal of Applied Mathematics and Physics 2016年第2期4卷 272-278页

作者： g. gulyamov P. J. Baymatov B. T. Abdulazizov Namang.n Eng.neering.Pedag.g.cal Institute Namangan Uzbekistan Namang.n State University Namangan Uzbekistan

The analysis of the density of states for electrons in sing.e quantum well, the conduction band nonparabolicity take is account. It is shown that the deg.ee of conduction band nonparabolicity pronounces depending.on the energ. density of states. With increasing.temperature, a step chang. in the density of states smoothes and at hig. temperatures is completely blurred. Nonparabolicity dispersion law manifests itself in a wide rang. of temperatures. Calculations are carried out for the example of the quantum wells in InAs and InSb.

关键词： Quantum Well Density of States Band Nonparabolicity Thermal Broadening

The Temperature Dependence of the Thermodynamic Density of States and Urbach Rule

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World Journal of Condensed Matter Physics 2015年第1期5卷 43-47页

作者： g. gulyamov N. Yu. Sharibaev U. I. Erkaboev Namang.n Eng.neering.Pedag.g.cal Institute Namangan Uzbekistan Namang.n Eng.neering.Technolog.cal Institute Namangan Uzbekistan

It is invited statistical explanation of the frequency and temperature dependence of the absorption coefficients of semiconductors on the long.wave edg. of the fundamental absorption. With the help of mathematical modeling. it shows that the thermal broadening.of the energ. states of the conduction band and the discrete states in the band g.p can cause long.wave decline according.to the Urbach rule.

关键词： The Density of States The Absorption Coefficient The Fundamental Absorption The Urbach Rule

Broadening.Thermal Energ. Levels and Density States Quasi One-Dimensional Electron g.s

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Journal of Applied Mathematics and Physics 2016年第4期4卷 706-710页

作者： P. J. Baymatov A. g. gulyamov A. B. Davlatov B. B. Uzakov Namang.n State University Namangan Uzbekistan Physico-Technical Institute Academy of Sciences of Uzbekistan Tashkent Uzbekistan Namang.n Eng.neering.Pedag.g.cal Institute Namangan Uzbekistan

We have investig.ted the energ. states of a one-dimensional electron g.s and analyzed the temperature dependence of the density of states. It is shown that with increasing.temperature due to thermal broadening.of quan... 详细信息

关键词： Quasi One-Dimensional Electron g.s Density of States Thermal Broadening