Influence of Recombination Centers on the Phase Portraits in Nanosized Semiconductor Films

作     者：Gafur Gulyamov Abdurasul G. Gulyamov Feruza R. Muhitdinova Gafur Gulyamov;Abdurasul G. Gulyamov;Feruza R. Muhitdinova

作者机构：Namangan Engineering-Pedagogical Institute Namangan Uzbekistan Physico-technical Institute Academy of Sciences of Uzbekistan Tashkent Uzbekistan Namangan State University Namangan Uzbekistan 

出 版 物：《Journal of Modern Physics》 (现代物理（英文）)

年 卷 期：2016年第7卷第13期

页      面：1661-1667页

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：Recombination Centers Phase Portrait Generation of Charge Carriers Recombination of Charge Carriers Forbidden Zone Absorption Coefficient 

摘      要：Influence of recombination centers’ changes on the form of phase portraits has been studied. It has been shown that the shape of the phase portraits depends on the concentration of semiconductor materials’ recombination centers.