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Simplified seismic scenario analysis of existing masonry buildings accounting for local site effects

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Frontiers of Structural and Civil Engineering 2024年第2期18卷 309-318页

作者： Ayşe E.ÖZSOYÖZBAY Işıl SANRI KARAPINAR Zehra N.kutlu İsmail E.KILIÇ Department of Civil Engineering Maltepe UniversityIstanbul 34857Turkey School of Engineering and Construction Oryx Universal CollegeDoha 12253Qatar

This study discusses the effects of local sites and hazard amplification on the seismic vulnerability assessment of existing masonry *** this context,a rapid seismic evaluation procedure was implemented on an old masonry building stock in the historical center galata,located inİstanbul,to determine the seismic risk priority of the built *** scenarios were generated for all soil classes,different moment magnitudes,and source-to-site distances to obtain more accurate results for the seismic vulnerability assessment of the studied building ***,damage distributions estimated under nine different scenarios with/without site effects were compared and illustrated in maps to discuss changes in vulnerability owing to amplification *** this study,by re-examining the rapid seismic evaluation procedure by including geo-hazard-based assessment,the importance of site effects on the vulnerability and risk assessment of built heritage was *** proposed framework integrating field data and local site effects is believed to advance the current applications for vulnerability assessment of masonry buildings and provide an improvement in the application of rapid seismic assessment procedures with more reliable results.

关键词： masonry buildings seismic vulnerability assessment cultural heritage local site effect

Critical Exponents for the Re-entrant Phase Transitions in the Three-Dimensional Blume-Emery-grifilths Model on the Cellular Automaton

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Chinese Physics Letters 2007年第7期24卷 2040-2043页

作者： N. Seferoglu B. kutlu gaziUfniversitesi Fen Bilimleri Enstitfisfi Fizik Anabilim Dah Ankara Turkey gaziUniversitesi Fen-Edebiyat Fakiiltesi Fizik Boliumfi 06500 Teknikokullar Ankara Turkey

The critical behaviour of the three-dimensional Blume-Emery-griffiths （BEg） model ＆ investigated at D/ J = O, -0.25 and -1 in the range of-1 ≤ K/J ≤ 0 for J -- 100. The simulations are carried out on a simple cubic lattice using the heating algorithm improved from the Creutz cellular automaton （CCA ） under periodic boundary conditions. The universality of the model are obtained for re-entrant and double re-entrant phase transitions which occur at certain D/J and K/J parameters, with J and K representing the nearest-neighbour bilinear and biquadratic interactions, and D being the single-ion anisotropy parameter. The values of static critical exponents β, γ and v are estimated within the framework of the finite-size scaling theory. The results are compatible with the universal Ising critical behaviour for all continuous phase transitions in these ranges.

关键词： Three-Dimensional Blume-Emery-griffiths BEg CCA

Critical Finite Size Scaling Relation of the Order-Parameter Probability Distribution for the Three-Dimensional Ising Model on the Creutz Cellular Automaton

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Chinese Physics Letters 2006年第10期23卷 2670-2673页

作者： B.kutlu M.Civi Department of Physics Gazi University 06500 Ankara Turkey

We study the order parameter probability distribution at the critical point for the three-dimensional spin-1/2 and spin-1 Ising models on the simple cubic lattice under periodic boundary conditions. The finite size scaling relation for the order parameter probability distribution is tested and verified numerically by microcanonical Creutz cellular automata simulations. The state critical exponent δ, which characterizes the far tail regime of the scaling order parameter probability distribution, is estimated for three-dimensional Ising models using the cellular automaton simulations at the critical temperature. The results are in good agreement with the Monte Carlo calculations.

关键词： BLUME-CAPEL MODEL MONTE-CARLO RENORMALIZATION-gROUP TRICRITICAL BEHAVIOR FREE-ENERgY MAgNETIZATION UNIVERSALITY SIMULATION DIMENSIONS EXPONENTS

Finite-Size Scaling Analysis of a Three-Dimensional Blume-Capel Model in the Presence of External Magnetic Field

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Chinese Physics Letters 2008年第7期25卷 2599-2602页

作者： H. Demirel A. Ozkan B. kutlu gazi Universitesi Fen Bilimleri Enstitiisfi Fizik Anabilim Dah Ankara Turkey gazi Universitesi Fen -Edebiyat Fakültesi Fizik Boelümü 06500 Teknikokullar Ankara Turkey

The Blume-Capel model in the presence of external magnetic field H has been simulated using a cellular automaton algorithm improved from the Creutz cellular automaton in three-dimension lattice. The field critical exponent 5 is estimated using the power law relations and the finite size scaling functions for the magnetization and the susceptibility in the range -0.1≤ h = H/J ≤0. The estimated value of the field critical exponent 5 is in good agreement with the universal value （δ = 5） in three dimensions. The simulations are carried out on a simple cubic lattice under periodic boundary conditions.

关键词： 2-DIMENSIONAL ISINg-MODEL CREUTZ CELLULAR-AUTOMATON EMERY-gRIFFITHS MODEL TRICRITICAL BEHAVIOR MONTE-CARLO CRITICAL EXPONENTS PHASE-TRANSITIONS O(4) MODEL SIMULATION ANISOTROPY

Finite Size Effect for the First-Order Phase Transition of the Three-Dimensional Blume-Capel Model on a Cellular Automaton

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Chinese Physics Letters 2006年第9期23卷 2526-2529页

作者： N. Seferoglu A. Oezkan B. kutlu gazi Universitesi Fen Bilimleri Enstitiisfi Fizik Anabilim Dah Ankara Turkey gazi Universitesi Fen Edebiyat Fakiiltesi Fizik B61iimii 06500 Teknikokullar Ankara Turkey

The first-order phase transition of the three-dimensional Blume-Capel model is investigated using the cooling algorithm which is improved from Creutz Cellular Automaton at D/J = 2.9, i.e. a ratio of single-ion anisotropy constant to bilinear interaction energy. We test the efficiency of the algorithm and obtain the finite-size effects at the first-order phase transition point. The transition temperature is estimated using the probability distributions of the order parameter and the energy. The analysis of data at the transition point indicates that the magnetic susceptibility and the specific heat maxima increase with the system value （L^d）.

关键词： TRICRITICAL BEHAVIOR MONTE-CARLO APPROXIMATION SIMULATION ANISOTROPY SYSTEMS

Healing Effects of Omalizumab in a Patient with Cholinergic Urticaria Associated Severe Dyspeptic Complaints

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Chinese Medical Journal 2015年第11期128卷 1559-1560页

作者： Ali kutlu Alpaslan Tanoglu Sami Ozturk Department of Immunologv and Allerqy GATA Haydarpasa Training Hospital 34668 Uskudar Istanbul Turkey Department of gastroenterology GATA Haydarpasa Training Hospital 34668 Uskudar Istanbul Turkey

To the Editor： Cholinergic urticaria （CU） is a type of physical urticaria characterized by a number of short-lasting, highly pruritic weals. The underlying pathological mechanism of CU is not fully understood. Omalizumab is a humanized, monoclonal Igg anti-lgE antibody that binds specifically to circulating lgE molecules, thus interrupting the allergic cascade, The efficacy of anti-lgE treatment has been shown in many disorders with complex and unclear etiology, comprising physical urticarias, chronic idiopathic urticaria, angioedema and eosinophil-associated gastrointestinal disorders.

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Arg-Phe-amide-related peptides influence gonadotropin-releasing hormone neurons

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Neural Regeneration Research 2013年第18期8卷 1714-1720页

作者： Haluk Kelestimur Emine Kacar Aysegul Uzun Mete Ozcan Selim kutlu Department of Physiology Medical School Firat University Department of Biochemistry Medical School Karadeniz Technical University Department of Biophysics Medical School Firat University

The hypothalamic Arg-Phe-amide-related peptides, gonadotropin-inhibitory hormone and orthologous mammalian peptides of Arg-Phe-amide, may be important regulators of the hypothalamus-pituitary-gonadal reproductive axis. These peptides may modulate the effects of kisspeptins because they are presently recognized as the most potent activators of the hypothalamus-pituitary-gonadal axis. However, their effects on gonadotropin-releasing hormone neurons have not been investigated. In the current study, the gT1-7 cell line-expressing gonadotropin-releasing hormone was used as a model to explore the effects of Arg-Phe- amide-related peptides on kisspeptin activation. Intracellular calcium concentration was quantified using the calcium-sensitive dye, fura-2 acetoxymethyl ester. gonadotropin-releasing hormone released into the medium was detected via enzyme-linked immunosorbent assay. Results showed that 100 nmol/L kisspeptin-10 significantly increased gonadotropin-releasing hormone levels （at 120 minutes of exposure） and intracellular calcium concentrations. Co-treatment of kisspeptin with 1 μmol/L gonadotropin-inhibitory hormone or 1 μmol/L Arg-Phe-amide-related peptide-1 significantly attenuated levels of kisspeptin-induced gonadotropin-releasing hormone but did not affect kisspeptin-induced elevations of intracellular calcium concentration. Overall, the results suggest that gonadotropin-inhibitory hormone and Arg-Phe-amide-related peptide-1 may have inhibitory effects on kisspeptin-activated gonadotropin-releasing hormone neurons independent of the calcium signaling pathway.

关键词： neural regeneration hypothalamus gonadotropin-inhibitory hormone Arg-Phe-amide-relatedpeptide-1 kisspeptin gonadotropin-releasing hormone calcium signaling gT1-7 cells neuroregeneration

Investigation of Electrical Transport in PECVD grown a-SiC_(x):H Thin Film

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Materials Sciences and Applications 2011年第8期2卷 993-999页

作者： Orhan Ozdemir Kutsal Bozkurt Kubilay kutlu Physics Department Yildiz Technical UniversityEsenler/IstanbulTurkey

Dc/ac transport characteristic of PECVD grown hydrogenated amorphous silicon carbide (a-SiCx:H) thin film was investigated in MIS (metal/insulator/semiconductor) structure by dc current/voltage (I/V) at different temperature (T), ac admittance vs. temperature at constant gate bias voltages and deep level transient spectroscopy (DLTS), respectively. According to I-V-T analysis, two main regimes exhibited. At low electric field, apparent Ohm’s law dominated with Arrhenius type thermal activation energy (EA) around 0.4 eV in both forward and reverse directions. At high field, on the contrary, space charge limited (SCL) current mechanism was eventual. The current transport mechanisms and its temperature/frequency dependence were interpreted by a thermally activated hopping processes across the localized states within a-SiCx:H thin film since 0.4 eV as EA was not high enough for intrinsic band conduction. Instead, transport of charge carriers took place in two steps;first a carrier is thermally excited to an empty energy level from an occupied state then multi-step tunnelling or hopping starts over. Therefore, the two steps mechanisms manifested as single activation energy, differing only through capture cross sections. In turn, two steps in capacitance together with conductance peaks in C-(g)-T while convoluted DLTS signal associated with such events in the measurements.

关键词： A-SiC_(x):H Dc/Ac Transport Conduction Mechanisms Apparent Activation Energy Admittance DLTS Hopping

Conduction Mechanism Analysis of Inversion Current in MOS Tunnel Diodes

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Materials Sciences and Applications 2013年第12期4卷 794-801页

作者： Ayse Evrim Saatci Orhan Ozdemir Kubilay kutlu Department of Physics Yildiz Technical UniversityIstanbulTurkey

Self inversion issue and excess capacitance phenomenon were observed for the first time in relatively thick silicon dioxide (SiO2) in the form of MOS (metal(Al)/SiO2/p type crystalline silicon) structure. Both phenomena were based on minority carriers (electrons in this case) and studied through DC current-applied bias voltage (I-V) and AC admittance measurements in dark/light condition as a function of ambient temperature (295 - 380 K). Either of the cases was the departure of traditional MOS analysis, manifesting themselves in the inversion regime of MOS diode. Increase in frequency/temperature/light intensity within dark and light conditions led to weaken the maxima of hump in C-V curves and finally turned into deep depletion mode after exceeding threshold value of frequency/temperature/light intensity. In resumed conditions, supplementary I-V measurements were carried out to describe the generation and conduction mechanism(s) for minority carriers (electrons).

关键词： Excess Capacitance MOS Selfly Inverted Region Tunneling Based Inversion Currents