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基于磁性传感器的低失调温度补偿接口电路设计

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电子与信息学报 2024年第4期46卷 1521-1528页

作者：樊华常伟鹏王策李国刘建明李宗霖魏琦冯全源电子科技大学重庆微电子产业技术研究院重庆401331 电子科技大学集成电路科学与工程学院(示范性微电子学院) 成都611731 电子科技大学广东电子信息工程研究院东莞523808 成都华微电子科技股份有限公司成都610041 清华大学精密仪器系北京100084 西南交通大学信息科学与技术学院成都611756

面向磁性传感器在物联网(IoT)技术中的广泛应用,该文基于180 nm CMOS工艺设计了一种具有低失调电压,低温度漂移特性的霍尔传感器接口电路。针对霍尔传感器灵敏度的温度漂移特性,该文设计了一种感温电路并与查表法相结合,调节可编程增益... 详细信息

面向磁性传感器在物联网(IoT)技术中的广泛应用,该文基于180 nm CMOS工艺设计了一种具有低失调电压,低温度漂移特性的霍尔传感器接口电路。针对霍尔传感器灵敏度的温度漂移特性,该文设计了一种感温电路并与查表法相结合,调节可编程增益放大器(PGA)的增益有效地降低了霍尔传感器的温度系数(TC)。在此基础上,通过在信号主通路中使用相关双采样(CDS)技术,极大程度上消除了霍尔传感器的失调电压。仿真结果表明,在–40°C~125°C温度范围内,霍尔传感器的TC从966.4 ppm/°C减小到了58.1 ppm/°C。信号主通路的流片结果表明,霍尔传感器的失调电压从25 mV左右减小到了4 mV左右,霍尔传感器的非线性误差为0.50%。芯片的总面积为0.69 mm^(2)。

关键词：霍尔传感器接口电路温度补偿低失调电压

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一种应用于LED驱动的新型过温保护电路

电子技术应用 2024年第1期50卷 27-30页

作者：文鑫冯全源程简西南交通大学微电子研究所四川成都611756 四川省科学技术厅四川成都610016

基于0.18μm BCD工艺,设计了一种应用于LED驱动的新型过温保护电路。利用基于电流求和的Banba型带隙基准源来产生高低阈值电压,从而消除芯片在过温点附近的振荡现象,同时带隙基准源加入了高阶曲率补偿,提高了过温阈值点的精度。通过Cade... 详细信息

基于0.18μm BCD工艺,设计了一种应用于LED驱动的新型过温保护电路。利用基于电流求和的Banba型带隙基准源来产生高低阈值电压,从而消除芯片在过温点附近的振荡现象,同时带隙基准源加入了高阶曲率补偿,提高了过温阈值点的精度。通过Cadence软件对该电路进行了仿真验证。结果表明,在-40℃~150℃的温度变化区间内,高低阈值电压的温度特性好,温度系数为2.9 ppm。当温度高于131.8℃时,能够触发过温保护;当温度低于109.4℃时,电路可恢复正常工作,迟滞量为22.4℃。该过温保护电路精度高,稳定性好,可应用于LED驱动芯片中。

关键词： LED驱动过温保护热振荡

Modelling and fabrication of wide temperature range Al_(0.24)Ga_(0.76)As/GaAs Hall magnetic sensors

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Journal of Semiconductors 2022年第3期43卷 87-93页

作者： Hua Fan Huichao Yue Jiangmin Mao Ting Peng Siming Zuo quanyuan feng Qi Wei Hadi Heidari State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu 610054China Chengdu HiWafer Semiconductor Co. Ltd.Chengdu 610225China James Watt School of Engineering University of GlasgowG128QQGlasgowUK Southwest Jiaotong University Chengdu 611756China Department of Precision Instrument Tsinghua UniversityBeijing 100084China Institute of Electronic and Information Engineering of UESTC in Guangdong University of Electronic Science and Technology of ChinaDongguan 523878China

Silicon Hall-effect sensors have been widely used in industry and research fields due to their straightforward fabrication process and CMOS ***,as their material property limitations,technicians usually implement complex CMOS circuits to improve the sensors’performance including temperature drift and offset compensation for fitting tough situation,but it is no doubt that it increases the design complexity and the sensor *** arsenide(GaAs)is a superior material of Hall-effect device because of its large mobility and stable temperature *** there is no specified modelling of GaAs Hall-effect device,this paper investigated its modelling by using finite element method(FEM)software Silvaco TCAD®to help and guide GaAs Hall-effect device *** modeled sensor has been fabricated and its experimental results are in agreement with the simulation *** to our previous silicon Hall-effect sensor,the GaAs Hall-effect sensor demonstrates potential and reliable benchmark for the future Hall magnetic sensor developments.

关键词： Hall-effect sensors GaAs Hall sensor GaAs semiconductor device

An asymmetric coplanar waveguide(ACPW)resonant antenna based on the composite right/left-handed transmission line

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Science China(Information Sciences) 2013年第12期56卷 139-147页

作者： WEI ShengJun feng quanyuan The Institute of Microelectronics Southwest Jiaotong University

An asymmetric coplanar waveguide(ACPW)resonant antenna based on a composite right/lefthanded transmission line(CRLH TL)is *** proposed antenna consists of an asymmetric coplanar waveguide feeding line and mushroom unit *** on the fundamental structure,an improvement on the antenna is *** novel structures including a strip-shaped extended ground plane and a rectangular extended ground plane are *** antenna with the strip-shaped extended ground plane exhibits bandwidth enhancement *** operating bandwidths with 10 dB return loss over 210MHz(1.57–1.78 GHz)is *** fractional bandwidth is enhanced from 0.31%to 12.5%,an improvement factor of approximately ***,the antenna with the rectangular extended ground plane presents broadband *** measured results,the impedance bandwidth over 3.19 GHz(2.65–5.84 GHz)was *** covers WiMAX 3.5/5.5 GHz and WLAN 5.2/5.8 GHz bands,and therefore could well apply to WiMAX/WLAN ***,the radiation patterns,peak gain and radiation efciency are also presented and discussed.

关键词： asymmetric coplanar waveguide(ACPW) composite right/left-handed transmission line(CRLH TL) bandwidth enhancement characteristic broadband feature

Compact Coplanar Epsilon-Negative Antenna with Ultra-Wide Band Character

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China Communications 2017年第2期14卷 49-56页

作者： Jun Tao quanyuan feng Zongliang Zheng Institute of Microelectronics Southwest Jiaotong University Chengdu 611756 China

In this paper, a compact coplanar ***(ENG) antenna is proposed with *** operation band and small size of 18×11.5 mm2. The proposed antenna is designed based on a ***(CPW) feeding antenna, and thus the *** structure is employed to realize the ENG unit cell, which is convenient to tune the frequency of *** resonance(ZOR) and extends the ZOR bandwidth. The *** resonant frequencies are achieved and mainly determined by the separate slots that are located between the radiating patch and the ground plane. Adding the *** inductance between the radiating patch and ground has slight impact on the *** resonant frequencies, and then the *** band is achieved by merging the ZOR bandwidth with the *** resonant bandwidths. The ground plane primarily works as a matching network for the proposed antenna. Although it generates a *** resonance, the performance is undesirable due to the impedance mismatching. The measured results show that the reflection coefficient, |S11| <.10 d B, is in a wide frequency range from 5.25 to 13 GHz, which covers the upper operation band of UWB communication. Also, the antenna contains relatively stable gains and *** radiation patterns.

关键词： ENG antenna CPW ZOR bandwidth merging ultra-wide band

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一种高PSRR低压差线性稳压器电路

电子与封装 2024年第4期24卷 56-62页

作者：黄立朝丁宁沈泊言余文中樊华曾泳钦冯全源中国电子科技集团公司第五十八研究所江苏无锡214035 电子科技大学重庆微电子产业技术研究院重庆401331 电子科技大学广东电子信息工程研究院广东东莞523808 电子科技大学集成电路科学与工程学院(示范性微电子学院) 成都611731 西南交通大学信息科学与技术学院成都611756

通过对低压差线性稳压器(LDO)的电源抑制比(PSRR)进行理论分析得出,功率管栅极电压与LDO输入电压的小信号比值越接近1,PSRR就越高。基于此理论,在传统LDO的基础上增加了1种新结构,将二极管连接形式的MOS管与共源共栅结构串联,使功率管... 详细信息

通过对低压差线性稳压器(LDO)的电源抑制比(PSRR)进行理论分析得出,功率管栅极电压与LDO输入电压的小信号比值越接近1,PSRR就越高。基于此理论,在传统LDO的基础上增加了1种新结构,将二极管连接形式的MOS管与共源共栅结构串联,使功率管栅极电压与LDO输入电压的小信号比值接近1。随后,对该结构进行了理论分析,分析结果表明相比其他的PSRR提升技术,具有该结构的LDO其PSRR不会随着负载电流的增加而发生较大变化。LDO改进前和改进后PSRR的绝对值分别为65 dB和76 dB;改进后的结构在不同的负载电流下均具有较高的PSRR。相比体驱动前馈以及增加电荷泵将电源回路与LDO主体电路隔离等PSRR提升技术,该方法仅在传统LDO上增加了3个MOS管,减小了电路的功耗和面积。

关键词：模拟集成电路电源管理模拟LDO 电源抑制比

ENERGY-EFFICIENT MICROWAVE COMPONENTS FOR MOBILE COMMUNICATION

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China Communications 2017年第2期14卷 19-20页

作者： Yuanan Liu quanyuan feng Fadhel M. Ghannouchi the electronic institute of china the school of information science and technology in southwest jiaotong university(swjtu) ChengduChina the institute of microelectronics of swjtu the electrical and computer engineering department schulich school of engineeringuniversity of calgaryCalgaryABCanada the intelligent rf radio laboratory(iradio lab) university of calgary royal society of canada the canadian academy of engineering-canadian academy of engineering the engineering institute of canada-engineering institute of canada ieee microwave theory and techniques society(ieee mtt-s)

In the coexisted world of 3G,4G,5G and many other specialized wireless communication systems,billions of connections could be existing for various information transmission ***,data show that the increase of network capacity is heavily more than the increase of the network energy efficiency in recent years,which could lead to more energy consumption per transmitted bit in the future *** basic units in mobile communication systems,microwave/RF components and modules play key roles

关键词： high data ENERGY-EFFICIENT MICROWAVE COMPONENTS FOR MOBILE COMMUNICATION PAPR show DPA

GeMn-substituted barium hexaferrite

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GeMn-substituted barium hexaferrite

浮动电极对屏蔽栅沟槽型MOSFET特性的影响

2002 3rd International Conference on Microwave and Millimeter Wave Technology

作者： quanyuan feng School of Computer and Comm.Eng. Southwest Jiaotong University

ISBN: (纸本)078037486X

The microwave properties have been studied on Polycrystalline hexaferrite BaZn(GeMn)*** X-ray diffrection has shown that the W-type hexaferrites BaZn(GeMn)xFeO can not be formed at x≥*** anisotropy field of hexaferrite BaZn(GeMn)FeO measured at room temperature is 7.90×10A/*** exchange interaction constants and the contributions to magnetocrystalline anisotropy for various sublattices in BaZn(GeMn)FeO have been calculated based on the molecular field theory and ***’s single ion anisotropy *** results show that the sublattices 12k and 2d have stronger contribution to anisotropy.

关键词： barium compounds zinc compounds ferrites microwave materials crystal structure magnetic anisotropy exchange interactions (electron) crystal field interactions GeMn-substituted barium hexaferrite BaZn/sub 2/(GeMn)/sub 0.2/Fe/sub 15.6/O/sub 27/ BaZn/sub 2/(GeMn)/sub x/Fe/sub 16-2x/O/sub 27/ microwave properties polycrystalline hexaferrite X-ray diffraction W-type hexaferrites anisotropy field room temperature exchange interaction magnetocrystalline anisotropy sublattices molecular field theory single ion anisotropy model 20 C

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微电子学 2023年第5期53卷 917-923页

作者：湛涛冯全源西南交通大学微电子研究所成都611756

提出了在屏蔽栅沟槽型MOSFET(SGT)的沟槽侧壁氧化层中形成浮动电极的结构,通过改善电场分布,优化了特征导通电阻与特征栅漏电容。在传统SGT结构的基础上,仅通过增大外延层掺杂浓度,改变浮动电极的长度和位置以及氧化层厚度,最终得到击... 详细信息

提出了在屏蔽栅沟槽型MOSFET(SGT)的沟槽侧壁氧化层中形成浮动电极的结构,通过改善电场分布,优化了特征导通电阻与特征栅漏电容。在传统SGT结构的基础上,仅通过增大外延层掺杂浓度,改变浮动电极的长度和位置以及氧化层厚度,最终得到击穿电压为141.1 V、特征导通电阻为55 mΩ·mm^(2)、特征栅漏电容为4.72 pF·mm^(-2)的浮动电极结构。与相同结构参数的SGT结构相比,在击穿电压不变的条件下,浮动电极结构的特征导通电阻降低了9.3%,Baliga优值提升了13%,特征栅漏电容降低了28.4%。

关键词：屏蔽栅浮动电极特征导通电阻特征栅漏电容