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Theoretical potential for low energy consumption phase change memory utilizing electrostatically-induced structural phase transitions in 2D materials

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npj Computational Materials 2018年第1期4卷 653-661页

作者： Daniel A.Rehn Yao Li eric pop Evan J.Reed Department of Mechanical Engineering Stanford UniversityStanfordCA 94305USA Department of Applied Physics Stanford UniversityStanfordCA 94305USA Department of Electrical Engineering Stanford UniversityStanfordCA 94305USA Department of Materials Science and Engineering Stanford UniversityStanfordCA 94305USA

Structural phase-change materials are of great importance for applications in information storage *** driven structural phase transitions are employed in phase-change memory to achieve lower programming voltages and potentially lower energy consumption than mainstream nonvolatile memory ***,the waste heat generated by such thermal mechanisms is often not optimized,and could present a limiting factor to widespread *** potential for electrostatically driven structural phase transitions has recently been predicted and subsequently reported in some two-dimensional materials,providing an athermal mechanism to dynamically control properties of these materials in a nonvolatile fashion while achieving potentially lower energy *** this work,we employ DFT-based calculations to make theoretical comparisons of the energy required to drive electrostatically-induced and thermally-induced phase *** theoretical limits in monolayer MoTe2 and thin films of Ge_(2)Sb_(2)Te_(5),we find that the energy consumption per unit volume of the electrostatically driven phase transition in monolayer MoTe2 at room temperature is 9% of the adiabatic lower limit of the thermally driven phase transition in Ge_(2)Sb_(2)Te_(5).Furthermore,experimentally reported phase change energy consumption of Ge_(2)Sb_(2)Te_(5) is 100–10,000 times larger than the adiabatic lower limit due to waste heat flow out of the material,leaving the possibility for energy consumption in monolayer MoTe2-based devices to be orders of magnitude smaller than Ge_(2)Sb_(2)Te_(5)-based devices.

关键词： transitions phase structural

SANTA： Self-aligned nanotrench ablation via Joule heating for probing sub-20 nm devices

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Nano Research 2016年第10期9卷 2950-2959页

作者： Feng Xiong Sanchit Deshmukh Sungduk Hong Yuan Dai Ashkan Behnam Feifei Lian eric pop Department of Electrical Engineering Stanford University Stanford CA 94305 USA Department of Electrical and Computer Engineering University of Illinois at Urbana-Champaign Urbana IL 6180 I USA

Manipulating materials at the nanometer scale is challenging, particularly if alignment with nanoscale electrodes is desired. Here, we describe a lithography-free, self-aligned nanotrench ablation （SANTA） technique to create nanoscale ＂trenches＂ in a polymer like poly（methyl methacrylate）（PMMA）. The nanotrenches are self-aligned with carbon nanotube （CNT） or graphene ribbon electrodes through a simple Joule heating process. Using simulations and experiments we investigated how the Joule power, ambient temperature, PMMA thickness, and substrate properties affect the spatial resolution of this technique. We achieved sub-20 nm nanotrenches, for the first time, by lowering the ambient temperature and reducing the PMMA thickness. We also demonstrated a functioning nanoscale resistive memory （RRAM） bit self- aligned with a CNT control device, achieved through the SANTA approach. This technique provides an elegant and inexpensive method to probe nanoscale devices using self-aligned electrodes, without the use of conventional alignment or lithography steps.

关键词： nanolithography carbon nanotubes graphene finite element self-aligned fabrication nanoscale thermal transport

Field-effect at electrical contacts to two-dimensional materials

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Nano Research 2021年第12期14卷 4894-4900页

作者： Yao Guo Yan Sun Alvin Tang Ching-Hua Wang Yanqing Zhao Mengmeng Bai Shuting Xu Zheqi Xu Tao Tang Sheng Wang Chenguang Qiu Kang Xu Xubiao Peng Junfeng Han eric pop Yang Chai School of Physics Beijing Institute of TechnologyBeijing100081China Department of Electrical Engineering and Stanford SystemX Alliance Stanford UniversityStanfordCA94305USA Advanced Manufacturing EDA Co. Ltd.Shanghai201204China Key Laboratory for the Physics and Chemistry of Nanodevices Department of ElectronicsPeking UniversityBeijing100871China Department of Applied Physics The Hong Kong Polytechnic UniversityHong KongChina

The inferior electrical contact to two-dimensional(2D)materials is a critical challenge for their application in post-silicon very large-scale integrated *** contacts were generally related to their resistive effect,quantified as contact *** a systematic investigation,this work demonstrates a capacitive metal-insulator-semiconductor(MIS)field-effect at the electrical contacts to 2D materials:The field-effect depletes or accumulates charge carriers,redistributes the voltage potential,and gives rise to abnormal current saturation and *** one hand,the current saturation hinders the devices’driving ability,which can be eliminated with carefully engineered contact *** the other hand,by introducing the nonlinearity to monolithic analog artificial neural network circuits,the circuits’perception ability can be significantly enhanced,as evidenced using a coronavirus disease 2019(COVID-19)critical illness prediction *** work provides a comprehension of the field-effect at the electrical contacts to 2D materials,which is fundamental to the design,simulation,and fabrication of electronics based on 2D materials.

关键词： field-effect electrical contact two-dimensional materials nonlinearity in-memory-computing

Erratum to: Field-effect at electrical contacts to two-dimensional materials

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Nano Research 2021年第12期14卷 4903-4903页

作者： Guo, Yao Sun, Yan Zhao, Yanqing Bai Mengmeng Xu, Shuting Xu Zheqi Peng Xubiao Han, Junfeng Tang, Alvin Wang, Ching-Hua pop, eric Tang, Tao Wang, Sheng Qiu Chenguang Xu, Kang Yang, Chai Beijing Institute of Technology School of Physics Beijing China (GRID:grid.43555.32) (ISNI:0000 0000 8841 6246) Stanford University Department of Electrical Engineering and Stanford SystemX Alliance Stanford USA (GRID:grid.168010.e) (ISNI:***) Advanced Manufacturing EDA Co. Ltd. Shanghai China (GRID:grid.43555.32) Peking University Key Laboratory for the Physics and Chemistry of Nanodevices Department of Electronics Beijing China (GRID:grid.11135.37) (ISNI:0000 0001 2256 9319) The Hong Kong Polytechnic University Department of Applied Physics Hong Kong China (GRID:grid.16890.36) (ISNI:0000 0004 1764 6123)

The article Field-effect at electrical contacts to two-dimensional materials, written by Yao Guo et al., was erroneously originally published electronically on the publisher’s internet portal (currently SpringerLink)...

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