Theoretical potential for low energy consumption phase change memory utilizing electrostatically-induced structural phase transitions in 2D materials

作     者：Daniel A.Rehn Yao Li Eric Pop Evan J.Reed 

作者机构：Department of Mechanical EngineeringStanford UniversityStanfordCA 94305USA Department of Applied PhysicsStanford UniversityStanfordCA 94305USA Department of Electrical EngineeringStanford UniversityStanfordCA 94305USA Department of Materials Science and EngineeringStanford UniversityStanfordCA 94305USA 

出 版 物：《npj Computational Materials》 (计算材料学（英文）)

年 卷 期：2018年第4卷第1期

页      面：653-661页

核心收录：

学科分类：08[工学] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：This work was partially supported by NSF grants EECS-1436626 and DMR-1455050,Army Research Office grant W911NF-15-1-0570,Office of Naval Research grant N00014-15-1-2697 a seed grant from Stanford System X Alliance This work was supported in part by the U.S.Army Research Laboratory,through the Army High Performance Computing Research Center,Cooperative Agreement W911NF-07-0027 

主　　题：transitions phase structural 

摘      要：Structural phase-change materials are of great importance for applications in information storage *** driven structural phase transitions are employed in phase-change memory to achieve lower programming voltages and potentially lower energy consumption than mainstream nonvolatile memory ***,the waste heat generated by such thermal mechanisms is often not optimized,and could present a limiting factor to widespread *** potential for electrostatically driven structural phase transitions has recently been predicted and subsequently reported in some two-dimensional materials,providing an athermal mechanism to dynamically control properties of these materials in a nonvolatile fashion while achieving potentially lower energy *** this work,we employ DFT-based calculations to make theoretical comparisons of the energy required to drive electrostatically-induced and thermally-induced phase *** theoretical limits in monolayer MoTe2 and thin films of Ge_(2)Sb_(2)Te_(5),we find that the energy consumption per unit volume of the electrostatically driven phase transition in monolayer MoTe2 at room temperature is 9% of the adiabatic lower limit of the thermally driven phase transition in Ge_(2)Sb_(2)Te_(5).Furthermore,experimentally reported phase change energy consumption of Ge_(2)Sb_(2)Te_(5) is 100–10,000 times larger than the adiabatic lower limit due to waste heat flow out of the material,leaving the possibility for energy consumption in monolayer MoTe2-based devices to be orders of magnitude smaller than Ge_(2)Sb_(2)Te_(5)-based devices.