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Progress on the program of Si-compatible two-dimensional semiconductor materials and devices

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Science China(Information Sciences) 2024年第6期67卷 152-171页

作者： Mingsheng XU Yuwei WANG Jiwei LIU deren yang College of Integrated Circuits State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University School of Materials Science and Engineering State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University

Two-dimensional(2D) materials are at the forefront of innovation, heralding a new era for nextgeneration electronics and optoelectronics. These materials are distinguished by their unique structural characteristics: they have no hanging bonds on their surface, exhibit weakened electrostatic shielding in the Z-direction, and boast atomic thickness in their monolayers. These features have led to groundbreaking discoveries in electrical, optical, and magnetic properties, paving the way for advancements in low-power electronics, valleytronics, infrared detectors, and memory devices. Despite these promising developments,Si-based technologies continue to dominate the landscape of next-generation electronics and optoelectronics,as well as heterogeneous integration. In response to this ongoing evolution, the National Natural Science Foundation of China(NSFC) initiated a major program in 2021 dubbed “Si-compatible two-dimensional semiconductor materials and devices”. This study reviews the progress made under the NSFC Program,spotlighting its main achievements and outlining key future research directions. Additionally, it sheds light on the challenges that researchers in the 2D domain face, particularly in developing Si-compatible 2D technologies.

关键词： two-dimensional materials Si-based CMOS technologies electronics and optoelectronics heterogeneous integration low-power

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Efficient Monolithic Perovskite/Silicon Tandem Photovoltaics

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Energy & Environmental Materials 2024年第3期7卷 272-285页

作者： Yong Wang Yu Wang Feng Gao deren yang State Key Laboratory of Silicon Materials and School of Materials Science and Engineering Zhejiang University ZJU-Hangzhou Global Scientific and Technological Innovation Center Zhejiang University Department of Physics Chemistry and Biology (IFM) Linkping University

Tunable bandgaps make halide perovskites promising candidates for developing tandem solar cells (TSCs),a strategy to break the radiative limit of 33.7%for single-junction solar *** perovskites with marketdominant crystalline silicon (c-Si) is particularly attractive; simple estimates based on the bandgap matching indicate that the efficiency limit in such tandem device is as high as 46%.However,state-of-the-art perovskite/c-Si TSCs only achieve an efficiency of～32.5%,implying significant challenges and also rich *** this review,we start with the operating mechanism and efficiency limit of TSCs,followed by systematical discussions on wide-bandgap perovskite front cells,interface selective contacts,and electrical interconnection layer,as well as photon management for highly efficient perovskite/c-Si *** highlight the challenges in this field and provide our understanding of future research directions toward highly efficient and stable large-scale wide-bandgap perovskite front cells for the commercialization of perovskite/c-Si TSCs.

关键词： 2-terminal electrical interconnection perovskite/silicon tandem photovoltaics photon management wide-bandgap perovskites

Highly responsive broadband Si-based MoS2 phototransistor on high-k dielectric

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Science China(Information Sciences) 2024年第6期67卷 180-189页

作者： Ali IMRAN Xin HE Jiwei LIU Qinghai ZHU Muhammad SULAMAN Fei XUE Mingsheng XU deren yang College of Integrated Circuits State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University ZJU-Hangzhou Global Scientific and Technological Innovation Centre School of Materials Science and Engineering State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems School of PhysicsBeijing Institute of Technology

The demand for photodetectors and image sensors has grown exponentially in the past decade in biomedical, security surveillance, robotics, automotive, quality control, image recognition, and military applications, due to their superior quality, broadband detection, lower noise, and economic viability. Here,we report a MoS2channel-based phototransistor over an HfO2/n-Si substrate isolated by an h BN layer. The high photoresponse is achieved through the integration of the photoconduction, photogating, and mobility enhancement process by utilizing excellent features of MoS2, HfO2/Si, and h BN. The capacitive coupling of the photogenerated carriers by high-k dielectric HfO2leads to modulation of MoS2Fermi level due to electrostatic doping. Furthermore, the MoS2also contributes to the photogeneration of carriers due to its semiconducting nature, leading to additional photocurrent. Ultimately, the combination of photogating,photoconduction, and swift carrier extraction with remarkable mobility of 11.65 cm2· V-1· s-1results in high responsivity, external quantum efficiency, and detectivity of 4.5 × 10～8A · W-1, 0.72 × 10～6, and 6.20× 1016Jones at 266 nm illumination, respectively. The device also demonstrates broadband photoresponse from 266–1000 nm wavelengths. The high responsivity distinguishes the potential of our device for the future of optoelectronics and broadband image sensing applications.

关键词： photogating photoconduction two-dimensional materials high $~k$ dielectric carrier scattering phototransistor

Defects evolution in n-type 4H-SiC induced by electron irradiation and annealing

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Journal of Semiconductors 2024年第7期45卷 77-83页

作者： Huifan Xiong Xuesong Lu Xu Gao Yuchao Yan Shuai Liu Lihui Song deren yang Xiaodong Pi State Key Laboratory of Silicon and Advanced Semiconductor Materials&School of Materials Science and Engineering Zhejiang UniversityHangzhou 310027China Key Laboratory of Power Semiconductor Materials and Devices of Zhejiang Province&Institute of Advanced Semiconductors ZJU-Hangzhou Global Scientific and Technological Innovation CenterZhejiang UniversityHangzhou 311200China

Radiation damage produced in 4H-SiC by electrons of different doses is presented by using multiple characterization techniques. Raman spectra results indicate that SiC crystal structures are essentially impervious to 10 Me V electron irradiation with doses up to 3000 kGy. However, irradiation indeed leads to the generation of various defects, which are evaluated through photoluminescence(PL) and deep level transient spectroscopy(DLTS). The PL spectra feature a prominent broad band centered at 500 nm, accompanied by several smaller peaks ranging from 660 to 808 nm. The intensity of each PL peak demonstrates a linear correlation with the irradiation dose, indicating a proportional increase in defect concentration during irradiation. The DLTS spectra reveal several thermally unstable and stable defects that exhibit similarities at low irradiation ***, after irradiating at the higher dose of 1000 kGy, a new stable defect labeled as R_(2)(Ec-0.51 eV) appeared after annealing at 800 K. Furthermore, the impact of irradiation-induced defects on SiC junction barrier Schottky diodes is discussed. It is observed that high-dose electron irradiation converts SiC n-epilayers to semi-insulating layers. However, subjecting the samples to a temperature of only 800 K results in a significant reduction in resistance due to the annealing out of unstable defects.

关键词： 4H-SiC deep level transient spectroscopy(DLTS) photoluminescence(PL) defects

A highly sensitive ratiometric near-infrared nanosensor based on erbium-hyperdoped silicon quantum dots for iron(Ⅲ) detection

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Journal of Semiconductors 2024年第8期45卷 49-58页

作者： Kun Wang Wenxuan Lai Zhenyi Ni deren yang Xiaodong Pi State Key Laboratory of Silicon and Advanced Semiconductor Materials&School of Materials Science and Engineering Zhejiang UniversityHangzhou 310027China Institute of Advanced Semiconductors&Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices ZJ-UHangzhou Global Scientific and Technological Innovation CenterZhejiang UniversityHangzhou 311215China

Ratiometric fluorescent detection of iron(Ⅲ)(Fe^(3+))offers inherent self-calibration and contactless analytic ***,realizing a dual-emission near-infrared(NIR)nanosensor with a low limit of detection(LOD)is rather *** this work,we report the synthesis of water-dispersible erbium-hyperdoped silicon quantum dots(Si QDs:Er),which emit NIR light at the wavelengths of 810 and 1540 nm.A dual-emission NIR nanosensor based on water-dispersible Si QDs:Er enables ratiometric Fe^(3+)detection with a very low LOD(0.06μM).The effects of pH,recyclability,and the interplay between static and dynamic quenching mechanisms for Fe^(3+)detection have been systematically *** addition,we demonstrate that the nanosensor may be used to construct a sequential logic circuit with memory functions.

关键词： erbium-hyperdoped silicon quantum dots dual-emission near-infrared nanosensor Fe^(3+)detection sequential logic circuit

Anisotropic etching mechanisms of 4H-SiC:Experimental and first-principles insights

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Journal of Semiconductors 2024年第1期45卷 42-47页

作者： Guang yang Lingbo Xu Can Cui Xiaodong Pi deren yang Rong Wang Key Laboratory of Optical Field Manipulation of Zhejiang Province Department of PhysicsZhejiang Sci-Tech UniversityHangzhou 310018China State Key Laboratory of Silicon and Advanced Semiconductor Materials&School of Materials Science and Engineering Zhejiang UniversityHangzhou 310027China Institute of Advanced Semiconductors&Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices HangzhoIun novation CenterZhejiang UniversityHangzhou 311200China

Molten-alkali etching has been widely used to reveal dislocations in 4H silicon carbide(4H-SiC),which has promoted the identification and statistics of dislocation density in 4H-SiC single ***,the etching mechanism of 4H-SiC is limited *** this letter,we reveal the anisotropic etching mechanism of the Si face and C face of 4H-SiC by combining molten-KOH etching,X-ray photoelectron spectroscopy(XPS)and first-principles *** activation energies for the molten-KOH etching of the C face and Si face of 4H-SiC are calculated to be 25.09 and 35.75 kcal/mol,*** molten-KOH etching rate of the C face is higher than the Si *** XPS analysis and first-principles calculations,we find that the molten-KOH etching of 4H-SiC is proceeded by the cycling of the oxidation of 4H-SiC by the dissolved oxygen and the removal of oxides by molten *** faster etching rate of the C face is caused by the fact that the oxides on the C face are unstable,and easier to be removed with molten alkali,rather than the C face being easier to be oxidized.

关键词： principles alkali etching

Highly responsive broadband Si-based MoSphototransistor on high-k dielectric

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Science China(Information Sciences) 2024年

作者： Ali IMRAN Xin HE Jiwei LIU Qinghai ZHU Muhammad SULAMAN Fei XUE Mingsheng XU deren yang Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems School of PhysicsBeijing Institute of Technology ZJU-Hangzhou Global Scientific and Technological Innovation Centre College of Integrated Circuits State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University School of Materials Science and Engineering State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University

The demand for photodetectors and image sensors has grown exponentially in the past decade in biomedical, security surveillance, robotics, automotive, quality control, image recognition, and military applications, due to their superior quality, broadband detection, lower noise, and economic viability. Here,we report a MoS2channel-based phototransistor over an HfO2/n-Si substrate isolated by an h BN layer. The high photoresponse is achieved through the integration of the photoconduction, photogating, and mobility enhancement process by utilizing excellent features of MoS2, HfO2/Si, and h BN. The capacitive coupling of the photogenerated carriers by high-k dielectric HfO2leads to modulation of MoS2Fermi level due to electrostatic doping. Furthermore, the MoS2also contributes to the photogeneration of carriers due to its semiconducting nature, leading to additional photocurrent. Ultimately, the combination of photogating,photoconduction, and swift carrier extraction with remarkable mobility of 11.65 cm2·V-1·s-1results in high responsivity, external quantum efficiency, and detectivity of 4.5×108A·W-1, 0.72×106, and 6.20×1016Jones at 266 nm illumination, respectively. The device also demonstrates broadband photoresponse from 266–1000 nm wavelengths. The high responsivity distinguishes the potential of our device for the future of optoelectronics and broadband image sensing applications.

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High-performance carbon-electrode-based self-powered optoelectronic synaptic devices

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Science China(Information Sciences) 2024年第5期67卷 339-340页

作者： Wen HUANG Xuwen XIA Huixing ZHANG Tenglong GUO Pengjie HANG Bin LI Jiawei TANG Biao LI Chen ZHU Lei WANG deren yang Xuegong YU Xing'ao LI Jiangsu Provincial Engineering Research Center of Low Dimensional Physics and New Energy & School of Science Nanjing University of Posts and Telecommunications College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications State Key Laboratory of Silicon and Advanced Semiconductor Materials Zhejiang University

A two-terminal self-powered optoelectronic structure could mimic synaptic functions of a human brain synapse unit(Figure 1(a)) based on the photovoltaic effects [1], demonstrating the potential for decreasing energy consumption for future computing. However, current self-powered optoelectronic synaptic devices face issues of stability and cost,which mainly arise from noble metal electrodes and independent hole transport layers used in these structures. Substituting low-cost carbon for these metal electrodes and carrier transport layers may promise to solve these challenges.

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基于硅/二维层状材料异质结的红外光电探测器研究进展

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材料导报 2024年第1期38卷 1-9页

作者：贺亦菲杨德仁皮孝东浙江大学材料科学与工程学院硅材料国家重点实验室杭州310027 浙江大学杭州国际科创中心杭州311200

红外光是一种频率介于微波和可见光范围之间的电磁波,在光通信、人工智能、医用治疗、军事探测和航空航天等领域具有广泛的应用。硅的带隙为1.12 eV,导致硅基光电探测器的截止波长短(约1.1 mm)。近年来,研究发现了新型二维层状材料,它... 详细信息

红外光是一种频率介于微波和可见光范围之间的电磁波,在光通信、人工智能、医用治疗、军事探测和航空航天等领域具有广泛的应用。硅的带隙为1.12 eV,导致硅基光电探测器的截止波长短(约1.1 mm)。近年来,研究发现了新型二维层状材料,它们具有带隙可调、载流子迁移率高、光谱响应宽、暗电流低、稳定性高以及制备工艺与互补金属氧化物半导体(Complementary metal oxide semiconductor, CMOS)工艺兼容等诸多优点,引起了研究人员的广泛关注。通过将硅与二维层状材料结合,能够有效地将硅基光电探测器的探测波段向波长超过1.1 mm的红外光波段拓展。本文着重介绍了近年来可探测波长超过传统硅光电探测器的基于硅/二维层状材料异质结的光电探测器在近红外和中红外光波段的研究进展并展望了其发展前景。

关键词：硅二维层状材料异质结红外光电探测器