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Structural and Optical Properties of ZnO Films with Different Thicknesses Grown on Sapphire by MOCVD

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Chemical Research in Chinese Universities 2006年第5期22卷 552-555页

作者： HOU Chang-min HUANG Ke-ke GAO Zhong-min LI Xiang-shan FENG Shou-hua ZHANG Yuan-tao du guo-tong State Key Laboratory of Inorganic Synthesis and Preparative Chemistry College of Chemistry Jilin University Changchun 130012 P. R. China College of Electronic Science and Engineering Jilin University Changchun 130012 P. R. China

ZnO（002） films with different thicknesses, grown on Al2O3 （006） substrates by metal-organic chemical vapor deposition（ MOCVD）, were etched by Ar ion beams. The samples were examined by D8 X-ray diffraction, scanning electron microscopy（SEM）, and photoluminescence（PL） spectrometry. The structural properties vary with the increasing thickness of the films. When the film thickness is thin, the phi（Φ） scanning curves for ZnO（103） and sapphire（116） substrate show the existence of two kinds of orientation relationships between ZnO films and sapphire, which are ZnO（002）//Al2O3 （006）, ZnO（ 100）//Al2O3 （110） and ZnO（002）//Al2O3 （006）, ZnO（ 110）//Al2O3 （110）. When the thickness increases to 500 nm there is only one orientation relationship, which is ZnO（002）// Al2O3 （006）, ZnO [ 100]//Al2O3 [ 110]. Their photoluminescence（PL） spectra at room temperature show that the optical properties of ZnO films have been greatly improved when increasing the thickness of films is increased.

关键词： MOCVD ZnO film PL spectrum Thickness

Influence of Transparent Anode on Luminescent Performance of Near-infrared Organic Light-emitting Diodes

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Chemical Research in Chinese Universities 2009年第6期25卷 786-790页

作者： GUAN He-song CHENG Chuan-hui LI Wan-cheng GENG Dong-feng FAN Zhao-qi CHANG Yu-chun ZHAO Wang guo Zhen-qiang du guo-tong State Key Laboratory on Integrated Optoelectronics College of Electronic Science and Engineering Jilin University Changchun 130012 P. R. China School of Physics and Optoelectronic Technology Dalian University of Technology Dalian 116024 P R. China China Airborne Missile Academy Luoyang 471009 P. R： China

The optical transmission（200--2000 nm）, sheet resistance and work functions of indium-tin oxide（ITO）（100 Ω/）, ITO（12 Ω/）, zinc-oxide（ZnO）, aluminum-doped ZnO（AZO） and polyaniline（PANI） films were investigated. Near-infrared organic light-emitting diodes（NIR-OLEDs） emitting around 1.54 μm based on Er（DBM）3Phen with ITO（100 Ω/）, ITO（12 Ω/） and PANI as anodes, respectively, were fabricated. The device structure was anode/4＂-tris（N-3-methylphenyl-N-phenyl-amino）-triphenylamine（m-MTDATA）/ N,N＇-di-l-naphthyl- N,N＇-diphenylbenzidine（NPB）/Er（DBM）3Phen/tris-（8-hydroxyquinoline） aluminum（Alq3）/A1. The results suggest that the performance of NIR-OLEDs with ITO（100 Ω/）, which has a lower Sn content, as anodes appear to be better than that of NIR-OLEDs with ITO（12 Ω/） and PANI as anodes, respectively. The high N1R transmittance of ITO（100 Ω/） is a major reason for the relatively high NIR EL efficiency. The more balanced holes and electrons in the device based on ITO（100 Ω/） are another reasons.

关键词： Transparent electrode Near-infrared(NIR) Organic light-emitting diode(OLED)

Photoluminescence Properties of Two-dimensional Planar Layer and Three-dimensional Island Layer for ZnO Films Grown Using MOCVD

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Chemical Research in Chinese Universities 2006年第6期22卷 692-695页

作者： HUANG Ke-ke HOU Chang-min GAO Zhong-min LI Xiang-shan FENG Shou-hua ZHANG Yuan-tao ZHU Hui-chao du guo-tong State Key Laboratory of Inorganic Synthesis and Preparative Chemistry Department of Electronic Science and Engineering Jilin University Changchun 130012 P. R. China

ZnO（002） films with different thicknesses ranging from 7 to 300 nm were grown on sapphire（006） substrates via metal-organic chemical vapor deposition （MOCVD）. The two-dimensional（2D） planar layer and the three-dimensional（3D） island layer were studied by using of X-ray diffraction（XRD） rocking curves and atomic force microscopy （AFM）. The room temperature photoluminescence （PL） spectra show a blue shift of the peak positions of the uhraviolet（UV） emission with increasing film thickness. The blue shift is remarkably high（393-380 nm） when an increase in film thickness（7-15 nm） is accompanied by the change of structure from a 2D planar layer to a 3D island layer. The PL spectra at 77 K also indicate that there are different transition mechanisms in the film thickness from a 2D planar layer to a 3D island layer near the 2D layer region.

关键词： ZnO films Metal-organic chemical vapor deposition(MOCVD) Photoluminescence Planar layer Island layer

Properties of p-NiO/n-GaN Diodes Fabricated by Magnetron Sputtering

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Chinese Physics Letters 2012年第10期29卷 190-192页

作者： WANG Hui ZHANG Bao-Lin WU guo-Guang WU Chao SHI Zhi-Feng ZHAO Yang WANG Jin MA Yan du guo-tong DONG Xin State Key Laboratory on Integrated Optoelectronics College of Electronic Science and EngineeringJilin UniversityChangchun 130012 College of Physics and Engineering Henan University of Science and TechnologyLuoyang 471003

The p-NiO thin film is prepared by radio frequency magnetron sputtering on the n-GaN/sapphire substrate to form p-NiO/n-GaN heterojunction *** structural,optical and electrical properties of the p-NiO thin film are *** results indicate that the NiO film has good crystal qualities and stable p-type *** current-voltage measurement of the p-NiO/n-GaN diode exhibits typical rectifying behaviour with a turn-on voltage of about 2.2 *** forward bias,a prominent ultraviolet emission centered at 375 nm is observed at room ***,the mechanism of the light emission is discussed in terms of the band diagrams of the heterojunction in detail.

关键词： temperature heterojunction sapphire

A Study of GaN Grown on SiH_(4) Pre-Treated 6H-SiC Substrates

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Chinese Physics Letters 2012年第1期29卷 268-271页

作者： SONG Shi-Wei LIANG Hong-Wei LIU Yang XIA Xiao-Chuan SHEN Ren-Sheng LUO Ying-Min du guo-tong School of Physics and Optoelectronic Technology Dalian University of TechnologyDalian 116024 State Key Laboratory on Integrated Optoelectronics College of Electronic Science and EngineeringJilin UniversityChangchun 130012

GaN thin films are grown on Si-terminated (0001) 6H-SiC substrates pre-treated with SiH_(4) in a metal organic chemical vapor deposition *** influence of the SiH_(4) pre-treatment conditions on the SiC surface is carefully *** is found that SiH_(4) could react with the SiC surface oxide,which will change the surface ***,our experiments demonstrate that SiH_(4) pre-treatment can distinctly influence the AlGaN nucleation layer and the basic characteristics of GaN.

关键词： GaN AlGaN (4)

Studies on Crystal Orientation of ZnO Film on Sapphire Using High-throughout X-ray Diffraction

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Chemical Research in Chinese Universities 2007年第1期23卷 1-4页

作者： HOU Chang-min HUANG Ke-ke GAO Zhong-min LI Xiang-shan FENG Shou-hua ZHANG Yuan-tao ZHU Hui-chao du guo-tong State Key Laboratory of Inorganic Synthesis and Preparative Chemistry College of Chemistry College of Electronic Science and Engineering Jilin University Changchun 130012 P. R. China Received Apr. 26 2006

The orientation of the nano-columnar ZnO films grown on sapphire using the technique of metal-organic chemical vapor deposition （MOCVD） exhibits deviation because of the mismatch between the crystal lattices of the films and the sapphire substrate. A high-throughout X-ray diffraction method was employed to determine the crystal orientation of the ZnO films at a time scale of the order of minutes based on the general area detection diffraction system （GADDS）. This rapid, effective, and ready method, adapted for characterizing the orientation of the nano-columnar crystals is used to directly explain the results of observation of the X-ray diffraction images, by the measurements of the orientations of the crystal columns of the ZnO films along c-axis and in parallel to ab plane.

关键词： Orientation ZnO films MOCVD

The KAM theorem on the modulus of continuity about parameters

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Science China Mathematics 2024年第3期67卷 577-592页

作者： Zhicheng tong Jiayin du Yong Li School of Mathematics Jilin UniversityChangchun 130012China Institute of Mathematics Jilin UniversityChangchun 130012China School of Mathematics and Statistics Center for Mathematics and Interdisciplinary SciencesNortheast Normal UniversityChangchun 130024China

In this paper,we study the Hamiltonian systems H(y,x,ξ,ε)=〈ω(ξ),y〉+εP(y,x,ξ,ε),where ω and P are continuous about ξ.We prove that persistent invariant tori possess the same frequency as the unperturbed tori,under a certain transversality condition and a weak convexity condition for the frequency mapping ω.As a direct application,we prove a Kolmogorov-Arnold-Moser(KAM) theorem when the perturbation P holds arbitrary Holder continuity with respect to the parameter ξ.The infinite-dimensional case is also *** our knowledge,this is the first approach to the systems with the only continuity in the parameter beyond H?lder's type.

关键词： Hamiltonian systems invariant tori frequency-preserving weak regularity

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Preparation of Copper Phthalocyanine Crystals Using Solvothermal Synthesis

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Chemical Research in Chinese Universities 2008年第4期24卷 407-410页

作者： XIA Dao-cheng LI Wan-cheng WANG Xu YU Shu-kun FAN Cui-xiang MA Chun-yu CHENG Chuan-hui FAN Zhao-qi du guo-tong CONG Fang-di du Xi-guang State Key Laboratory of Materials Modification by Laser Ion and Electron Beams Dalian University of Technology Dalian 116023 P R. China Chemistry Depatment of Yuncheng University Yuncheng 044000 P R. China State Key Laboratory on Integrated Optoelectronics Jilin University Changchun 130012 P R. China State Key Laboratory for Superamolecular Structure and Materials Jilin University Changchun 130012 P R. China Faculty of Chemistry Northeast Normal University Changchun 130024 P. R. China

A novel solvothermal synthesis method for the direct growth of B-form crystals of copper phthalocyanine（CuPc） is presented in this article. With quinoline as solvent, crystals were grown after cooling the reaction mixture of 1,3-diiminoisoindoline and copper oxide, heated for 9 h at 270 ℃, to room temperature in an autoclave. These high quality crystals were suitable for characterization measurements. The single-crystal diffraction data show a monoclinic system unit cell： a=1.4668（3） nm, b=0.48109（10） nm, c=1.9515（7） nm, a=90°, B=121.04（2）°, r=90°, where the corresponding cell volume is 1.17991 nm^3. Needle-like single crystals of CuPc up to 10.5 mm in length were obtained. The influences of different temperatures, reaction time and solvent volume on the crystal yields were also discussed. Optimum reaction conditions were 10 mL of quinoline, at 270 ℃ for 8 h.

关键词： Solvothermal synthesis Single crystal CuPc Quinoline Solvent Autoclave

Electroless Nickel Plating and Electroplating on FBG Temperature Sensor

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Chemical Research in Chinese Universities 2008年第5期24卷 635-639页

作者： SHEN Ren-sheng TENG Rui LI Xiang-ping ZHANG Jin XIA Dao-cheng FAN Zhao-qi YU Yong-sen ZHANG Yu-shu du guo-tong State Key Laboratory of Materials Modification by Laser Ion and Electron Beams School of Physics and Optoeleetronic Technology Dalian University of Technology DaIian 116024 P. R. China State Key Laboratory on Integrated Optoelectronies College of Electronic Science and Engineering Jilin University Changchun 130012 P R. China

Metal-coated fiber Bragg grating（FBG）temperature sensors were prepared via electroless nickel（EN）plating and tin electroplating methods on the surface of normal bare *** surface morphologies of the metal-coated layers were observed under a metallographic *** effects of pretreatment sequence,pH value of EN plating solution and current density of electroplating on the performance of the metal-coated layers were ***, the Bragg wavelength shift induced by temperature was monitored by an optical spectrum *** of the metal-coated FBG（MFBG）sensor was almost two times that of normal bare FBG *** measuring temperature of the MFBG sensor could be up to 280℃,which was much better than that of conventional FBG sensor.

关键词： FBG Metal-coated layer Electroless nickel plating Electroplating Temperature sensor