Effects of ZnO Buffer Layer Thickness on Properties of Mg_xZn_(1-x)O Thin Films Deposited by MOCVD

作     者：DONG Xin LIU Da-li DU Guo-tong ZHANG Yuan-tao ZHU Hui-chao YAN Xiao-long GAO Zhong-min 

作者机构：State Key Laboratory on Integrated Optoelectronics College of Electronic Science and Engineering Jilin University Changchun 130012 P. R. China 

出 版 物：《Chemical Research in Chinese Universities》 (高等学校化学研究（英文版）)

年 卷 期：2005年第21卷第5期

页      面：583-586页

核心收录：

学科分类：08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 

基　　金：Supported by the 863 Project(No.2001AA311130) 

主　　题：MgxZn1-xO ZnO Buffer layer Sapphire substrate MOCVD AFM 

摘      要：High-quality MgxZn1-xO thin films were grown on sapphire（0001 ） substrates with a ZnO buffer layer of different thicknesses by means of metal-organic chemical vapor deposition. Diethyl zinc, bis-cyclopentadienyl-Mg and oxygen were used as the precursor materials. The crystalline quality, surface morphologies and optical properties of the Mg, Zn1-xO films were investigated by X-ray diffraction, atomic force microscopy and photoluminescence spectrometry. It was shown that the quality of the MgxZn1-xO thin films depends on the thickness of the ZnO buffer layer and an Mg, Zn1-xO thin film with a ZnO buffer layer whose thickness was 20 nm exhibited the best crystal-quality, optical properties and a flat and dense surface.