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Optimization of Polishing Parameters with Taguchi Method for LBO Crystal in CMP

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Journal of Materials Science & Technology 2009年第5期25卷 703-707页

作者： Jun Li Yongwei Zhu Dunwen Zuo Yong Zhu chuangtian chen Jiangsu Key Laboratory of Precision and Micro-manufacturing Technology Nanjing University of Aeronautics and Astronautics Nanjing 210016 China Beijing Center for Crystal Research ＆ of Sciences Beijing 100080 China Development Technical Institute of Physics and Chemistry Chinese Academy

Chemical mechanical polishing （CMP） was used to polish Lithium triborate （LiB3O5 or LBO） crystal. Taguchi method was applied for optimization of the polishing parameters. Material removal rate （MRR） and surface roughness are considered as criteria for the optimization. The polishing pressure, the abrasive concentration and the table velocity are important parameters which influence MRR and surface roughness in CMP of LBO crystal. Experiment results indicate that for MRR the polishing pressure is the most significant polishing parameter followed by table velocity; while for the surface roughness, the abrasive concentration is the most important one. For high MRR in CMP of LBO ctystal the optimal conditions are： pressure 620 g/cm^2, concentration 5.0 wt pct, and velocity 60 r/min, respectively. For the best surface roughness the optimal conditions are： pressure 416 g/cm^2, concentration 5.0 wt pct, and velocity 40 r/min, respectively. The contributions of individual parameters for MRR and surface roughness were obtained.

关键词： Chemical mechanical polishing (CMP) Lithium triborate (LBO) crystal Material removal rate (MRR) Surface roughness Taguchi method

GROWTH OF BETA-BARIUM METABORATE SINGLE CRYSTAL FIBERS ALONG THE PHASE MATCHING DIRECTION

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Chinese Physics Letters 1990年第12期7卷 568-571页

作者： HOU Jianguo TANG Dingyuan chen chuangtian YE Linghua chen Jiqin DING Zuchang Fujian Institute of Research on the Structure of Matter Academia SinicaFuzhou 350002 Graduate School Zhejiang UniversityHangzhou 310027

High optical quality single crystal fibers of β-BaB_(2)O_(4)(BBO),an important nonlinear optical material,were grown along the second-harmonic generation phase matching direction by the laser heated pedestal growth *** effects of various growth parameters,especially growth rate,on growth stability and fiber quality were *** was found that 0,25mm/min is the suitable growth rate which can reduces the harmful effects of growth anisotropy and constitutional supercooling on fiber quality.

关键词： fiber optical heated

Studies on the Character of Wide Band Frequency Doubling in LiB_(3)O_(5) Crystal

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Chinese Physics Letters 1993年第3期10卷 147-150页

作者： XIE Fali MAO Hongwei WU Baichang chen chuangtian Fujian Institute of Research on the Structure of Matter Fuzhou 350002

The angular acceptance and the spectral acceptance about the retracing point of phase-matching angles for type I second-harmonic generation in LiB_(3)O_(5)(LBO)crystal have been *** exact wavelength in retracing point is found to be 1.303μm,and the spectral acceptance bandwidth and angular acceptance width are about 115nm-cm and 11mrad-cm respectively.A possible application of LBO crystal in direct frequency doubling of femtosecond laser pulse has been predicted with theory.

关键词： Crystal doubling crystal

Study of the Retracing Behavior of the Phase-Matching Angle in Second Harmonic Generation

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Chinese Physics Letters 1994年第5期11卷 273-276页

作者： LIU Xiang DENG Daoqun WU Ling-an XU Zuyan chen chuangtian WU Baichang Institute of Physics Academia SinicaBeijing 100080 Fujian Institute of Research on Structures of Matter Academia SinicaFujian 350002

The retracing behavior of the phase-matching angle(RBPA)in many nonlinear optical crystals for second harmonic generation(SHG)has been demonstrated by *** generality of this phenomenon is successfully explained by a theoretical analysis based on classical *** wavelengths of the fundamental waves and phasematching angles for describing the RBPA of eight kinds of crystals are ***,we point out that RBPA exists generally in both uniaxial and biaxial crystals for both type Ⅰ and type Ⅱ SHG.

关键词： calculation matching optics

PICOSECOND NARROW-BAND SUPERLUMINESCENT OPTICAL PARAMETRIC SELF-AMPLIFICATION IN β-BaB_(2)O_(4) CRYSTAL PUMPED AT 354.7nm

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Chinese Physics Letters 1990年第11期7卷 497-499页

作者： DENG Daoqun XU Zuyan WANG Yunping ZHENG Wanhua LIU Xiang WU Baichang chen chuangtian Institute of Physics Academia SinicaBeijing 100080 Fujian Institute of Research on the Stucture of Matter Academia SinicaFuzhou 350002

A tunable picosecond narrow band β-BaB_(2)O_(4)(BBO)superluminescent optical parametric self-amplification(OPSA)pumped by the third harmonic of an actively-passively mode-locked Nd:YAG laser has been *** output wavelength of the OPSA was tunable from 406.6nm to *** maximum energy conversion efficiency was 11%.The maximum peak power of the visible output was as high as 13MW.

关键词： Nd:YAG tunable pumped

TUNABLE HIGH-POWER BaB_(2)O_(4) OPTICAL PARAMETRIC OSCILLATOR PUMPED AT 355nm

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Chinese Physics Letters 1990年第9期7卷 394-397页

作者： XU Zuyan DENG Daoqun WANG Yunping ZHENG Wanhua LIU Xiang WU Baichang chen chuangtian Institute of Physics Academia SinicaBeijing 100080 Fujian Institute of the Structure of Matter Academia SinicaFuzhou 350002

We report the operation of aβ-BaB_(2)O_(4)(BBO)optical parametric oscillator(OPO)broadly tunable in the visible and the near *** efficiency of 22.7%for the signal and 34.1%for the idler corresponding to the total energy conversion efficiency of 25.9%has been *** maximum average output power and the maximum output energy reached 220m W and 22rnJ/pulse,*** changing the matching angle of the OPO,the output wavelength was continuously scanned throughout 425-2144nm.

关键词： OPO tunable oscillator

6th Harmonic Generation of Nd：YAG Laser and the Ultrahigh Resolution Photoemition Spectroscopy

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量子光学学报 2006年第B8期12卷 58-58页

作者： chuangtian chen Technical Institute of Physics and Chemistry Chinese Academy of Sciences P. O. Box 2711 Belling 100080 China

In situ carrier tuning in high temperature superconductor Bi2Sr2CaCu2O(8+δ)by potassium deposition

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Science Bulletin 2016年第13期61卷 1037-1043页

作者： Yuxiao Zhang cheng Hu Yong Hu Lin Zhao Ying Ding Xuan Sun Aiji Liang Yan Zhang Shaolong He Defa Liu Li Yu Guodong Liu Xiaoli Dong Genda Gu chuangtian chen Zuyan Xu Xingjiang Zhou National Laboratory for Superconductivity Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of Sciences Beijing 100190 China Brookhaven National Laboratory Condensed Matter Physics and Materials Science Department New York NY 11973 USA Technical Institute of Physics and Chemistry Chinese Academy of Sciences Beijing 100190 China Collaborative Innovation Center of Quantum Matter Beijing 100871 China

We report a successful tuning of the hole doping level over a wide range in high temperature superconductor Bi2Sr2CaCu2O8＋δ （Bi2212） through successive in situ potassium （K） deposition. By taking high resolution angleresolved photoemission measurements on the Fermi surface and band structure of an overdoped Bi2212 （To = 76 K） at different stages of K deposition, we found that the area of the hole-like Fermi surface around the Brillouin zone corner （n,n） shrinks with increasing K deposition. This indicates a continuous hole concentration change from initial - 0.26 to eventual 0.09 after extensive K deposition, a net doping level change of 0.17 that makes it possible to bring Bi2212 from being originally overdoped, to optimally-doped, and even- tually becoming heavily underdoped. The electronic behaviors with K deposition are consistent with those of Bi2212 samples with different hole doping levels. These results demonstrate that K deposition is an effective way of in situ controlling the hole concentration in Bi2212. This work opens a good way of studying the doping evolution of electronic structure and establishing the electronic phase diagram in Bi2212 that can be extended to other cuprate superconductors.

关键词： Bi2212 - Superconductor- K-deposition -Photoemission Fermi surface

Temperature-induced Lifshitz transition in topological insulator candidate HfTe_5

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Science Bulletin 2017年第13期62卷 950-956页

作者： Yan Zhang chenlu Wang Guodong Liu Aiji Liang Lingxiao Zhao Jianwei Huang Qiang Gao Bing Shen Jing Liu cheng Hu Wenjuan Zhao Genfu chen Xiaowen Jia Li Yu Lin Zhao Shaolong He Fengfeng Zhang Shenjin Zhang Feng Yang Zhimin Wang Qinjun Peng Zuyan Xu chuangtian chen Xingjiang Zhou Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of Sciences University of Chinese Academy of Sciences Collaborative Innovation Center of Quantum Matter Military Transportation University Technical Institute of Physics and Chemistry Chinese Academy of Sciences

The ongoing discoveries and studies of novel topological quantum materials have become an emergent and important field of condensed matter physics. Recently, Hfres ignited renewed interest as a candidate of a novel topological material. The single-layer Hffes is predicted to be a tWOldimensional large band gap topological insulator and can be stacked into a bulk that may host a temperatureldriven topological phase transition. Historically, Hfres attracted considerable interest for its anomalous transport properties characterized by a peculiar resistivity peak accompanied by a sign reversal carrier type. The origin of the transport anomaly remains under a hot debate. Here we report the first high-resolution laserlbased anglelresolved photoemission measurements on the temperature-dependent electronic structure in Hffes. Our results indicated that a temperature-induced Lifshitz transition occurs in Hffes, which provides a natural understanding on the origin of the transport anomaly in Hffe~. In addition, our observa- tions suggest that Hffes is a weak topological insulator that is located at the phase boundary between weak and strong topological insulators at very low temperature.

关键词： HtTe5 ZrTe5 Lifshitz transition Topological insulators Angle-resolved photoemission spectroscopy(ARPES)