In situ carrier tuning in high temperature superconductor Bi2Sr2CaCu2O(8+δ)by potassium deposition

作     者：Yuxiao Zhang Cheng Hu Yong Hu Lin Zhao Ying Ding Xuan Sun Aiji Liang Yan Zhang Shaolong He Defa Liu Li Yu Guodong Liu Xiaoli Dong Genda Gu Chuangtian Chen Zuyan Xu Xingjiang Zhou 

作者机构：National Laboratory for Superconductivity Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of Sciences Beijing 100190 China Brookhaven National Laboratory Condensed Matter Physics and Materials Science Department New York NY 11973 USA Technical Institute of Physics and Chemistry Chinese Academy of Sciences Beijing 100190 China Collaborative Innovation Center of Quantum MatterBeijing 100871 China 

出 版 物：《Science Bulletin》 (科学通报（英文版）)

年 卷 期：2016年第61卷第13期

页      面：1037-1043页

核心收录：

学科分类：080801[工学-电机与电器] 0808[工学-电气工程] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：XJZ thanks financial support from the National Natural Science foundation of China (11190022,11334010 and 11534007) the National Basic Research Program of China (2015CB921000) the Strategic Priority Research Program (B) of Chinese Academy of Sciences (XDB07020300) 

主　　题：Bi2212 - Superconductor- K-deposition -Photoemission Fermi surface 

摘      要：We report a successful tuning of the hole doping level over a wide range in high temperature superconductor Bi2Sr2CaCu2O8＋δ （Bi2212） through successive in situ potassium （K） deposition. By taking high resolution angleresolved photoemission measurements on the Fermi surface and band structure of an overdoped Bi2212 （To = 76 K） at different stages of K deposition, we found that the area of the hole-like Fermi surface around the Brillouin zone corner （n,n） shrinks with increasing K deposition. This indicates a continuous hole concentration change from initial - 0.26 to eventual 0.09 after extensive K deposition, a net doping level change of 0.17 that makes it possible to bring Bi2212 from being originally overdoped, to optimally-doped, and even- tually becoming heavily underdoped. The electronic behaviors with K deposition are consistent with those of Bi2212 samples with different hole doping levels. These results demonstrate that K deposition is an effective way of in situ controlling the hole concentration in Bi2212. This work opens a good way of studying the doping evolution of electronic structure and establishing the electronic phase diagram in Bi2212 that can be extended to other cuprate superconductors.