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Nonpolar Al_(x)Ga_(1−x)N/Al_(y)Ga_(1−y)N multiple quantum wells on GaN nanowire for UV emission

Nano Research 2022年第8期15卷 7670-7680页

作者： Sonachand Adhikari Olivier Lee Cheong Lem Felipe Kremer Kaushal Vora Frank Brink Mykhaylo Lysevych Hark Hoe Tan chennupati jagadish Department of Electronic Materials Engineering Research School of PhysicsThe Australian National UniversityCanberraAustralian Capital Territory 2601Australia Semiconductor Device Fabrication Group CSIR-Central Electronics Engineering Research InstitutePilaniRajasthan 333031India Australian National Fabrication Facility ACT Node Research School of PhysicsThe Australian National UniversityCanberraAustralian Capital Territory 2601Australia Centre for Advanced Microscopy The Australian National UniversityCanberraAustralian Capital Territory 2601Australia Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems Research School of PhysicsThe Australian National UniversityCanberraAustralian Capital Territory 2601Australia

Nonpolar m-plane AlGaN offers the advantage of polarization-free multiple quantum wells(MQWs)for ultraviolet(UV)emission and can be achieved on the sidewalls of selective area grown GaN *** reveal that the growth of AlGaN on GaN nanowires by metal organic chemical vapor deposition(MOCVD)is driven by vapor-phase diffusion,and consequently puts a limit on the pitch of nanowire array due to shadowing *** insight into the difficulty of achieving metal-polar AlGaN nanowire by selective area growth(SAG)in MOCVD is also provided and can be attributed to the strong tendency to form pyramidal structure due to a very small growth rate of{1011}semipolar planes compared to(0001)*** nonpolar m-plane sidewalls of GaN nanowires obtained via SAG provides an excellent platform for growth of nonpolar AlGaN *** emission from mplane Al_(x)Ga_(1−x)N/Al_(y)Ga_(1−y)N MQWs grown on sidewalls of dislocation-free GaN nanowire is demonstrated in the wavelength range of 318–343 nm.

关键词： metal organic chemical vapor deposition(MOCVD) nanowire nonpolar plane AlGaN selective area growth multiple quantum wells

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Tuning the crystal structure and optical properties of selective area grown InGaAs nanowires

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Nano Research 2022年第4期15卷 3695-3703页

作者： Zahra Azimi Aswani Gopakumar Amira SAmeruddin Li Li Thien Truong Hieu TNguyen Hark Hoe Tan chennupati jagadish Jennifer Wong-Leung Department of Electronic Materials Engineering Research School of PhysicsThe Australian National UniversityCanberra ACT 2601Australia Faculty of Applied Science and Technology Universiti Tun Hussein Onn MalaysiaBatu Pahat 86400Malaysia Australian National Fabrication Facility ACT Node Research School of PhysicsThe Australian National UniversityCanberra ACT 2601Australia School of Engineering The Australian National UniversityCanberra ACT 2601Australia Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems Research School of PhysicsThe Australian National UniversityCanberra ACT 2601Australia

Catalyst-free InGaAs nanowires grown by selective area epitaxy are promising building blocks for future optoelectronic devices in the infrared spectral *** progress,the role of pattern geometry and growth parameters on the composition,microstructure,and optical properties of InGaAs nanowires is still ***,we present an optimised growth parameter window to achieve highly uniform In1-xGaxAs nanowire arrays on GaAs(111)B substrate over an extensive range of Ga concentrations,from 0.1 to 0.91,by selective-area metal-organic vapor-phase *** observe that the Ga content always increases with decreasing In/(Ga+In)precursor ratio and group V flow rate and increasing growth *** increase in Ga content is supported by a blue shift in the photoluminescence peak *** geometry of the nanowire arrays also plays an important role in the resulting ***,increasing the nanowire pitch size from 0.6 to 2μm in a patterned array shifts the photoluminescence peak emission by up to 120 *** of these growth and geometry parameters,the Ga content determines the crystal structure,resulting in a predominantly wurtzite structure for xGa≤0.3 and a predominantly zinc blende phase for xGa≥*** insights on the factors controlling the composition of InGaAs nanowires grown by a scalable catalyst-free approach provide directions for engineering nanowires as functional components of future optoelectronic devices.

关键词： InGaAs nanowires ternary semiconductors selective-area metal-organic vapor-phase epitaxy nanostructure pattern geometry

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Mirror-twin induced bicrystalline InAs nanoleaves

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Nano Research 2016年第3期9卷 766-773页

作者： Mun Teng Soo Kun Zheng Qiang Gao Hark Hoe Tan chennupati jagadish Jin Zou Materials Engineering The University of Queensland St. Lucia QLD 4072 Australia Centre for Microscopy and Microanalysis The University of Queensland St. Lucia QLD 4072 Australia Australian Institute for Bioengineering and Nanotechnology The University of Queensland St. Lucia QLD 4072 Australia Department of Electronic Materials Engineering Research School of Physics and Engineering The Australian National University Canberra ACT2601 Australia

In this study, leaf-like one-dimensional InAs nanostructures were grown by the metal-organic chemical vapor deposition method. Detailed structural charac- terization suggests that the nanoleaves contain relatively low-energy {122} or {133} mirror twins acting as their midribs and narrow sections connecting the nanoleaves and their underlying bases as petioles. Importantly, the mirror twins lead to identical lateral growth of the twinned structures in terms of crystallography and polarity, which is essential for the formation of lateral symmetrical nanoleaves. It has been found that the formation of nanoleaves is driven by catalyst energy minimization. This study provides a biomimic of leaf found in nature by fabricating a semiconductor nanoleaf.

关键词： InAs nanoleaf twin boundary mirror twin

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Electrically programmable solid-state metasurfaces via flash localised heating

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Light(Science & Applications) 2023年第3期12卷 391-397页

作者： Khosro Zangeneh Kamali Lei Xu Nikita Gagrani Hark Hoe Tan chennupati jagadish Andrey Miroshnichenko Dragomir Neshev Mohsen Rahmani ARC Centre of Excellence for Transformative Meta-Optical Systems(TMOS) Research School of PhysicsThe Australian National UniversityCanberraACT 2601Australia Advanced Optics and Photonics Laboratory Department of EngineeringSchool of Science and TechnologyNottingham Trent UniversityNottinghamNG118NSUK School of Engineering and Information Technology University of New South WalesCanberraACT 2600Australia

In the last decades,metasurfaces have attracted much attention because of their extraordinary light-scattering ***,their inherently static geometry is an obstacle to many applications where dynamic tunability in their optical behaviour is ***,there is a quest to enable dynamic tuning of metasurface properties,particularly with fast tuning rate,large modulation by small electrical signals,solid state and programmable across multiple ***,we demonstrate electrically tunable metasurfaces driven by thermo-optic effect and flash-heating in *** show a 9-fold change in transmission by<5 V biasing voltage and the modulation rise-time of<625µ*** device consists of a silicon hole array metasurface encapsulated by transparent conducting oxide as a localised *** allows for video frame rate optical switching over multiple pixels that can be electrically *** of the advantages of the proposed tuning method compared with other methods are the possibility to apply it for modulation in the visible and near-infrared region,large modulation depth,working at transmission regime,exhibiting low optical loss,low input voltage requirement,and operating with higher than video-rate switching *** device is furthermore compatible with modern electronic display technologies and could be ideal for personal electronic devices such as flat displays,virtual reality holography and light detection and ranging,where fast,solid-state and transparent optical switches are required.

关键词： tuning flash state

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Highly regular rosette-shaped cathodoluminescence in GaN selfassembled nanodisks and nanorods

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Nano Research 2020年第9期13卷 2500-2505页

作者： Bijun Zhao Mark Nicolas Lockrey Naiyin Wang Philippe Caroffu Xiaoming Yuan Li Li JenniferWong-Leung Hark Hoe Tan chennupati jagadish Departm ent of Electronic Materials Engineering Research School of PhysicsThe Australian National UniversityCanberra 0200ACTAustralia Australian National Fabrication Facility Research School of PhysicsThe Australian National UniversityCanberra 0200ACTAustralia Hunan Key Laboratory for Supermicrostructure and Ultrafast Process School of Physics and ElectronicsCentral South University932 South Lushan RoadChangsha 410083China ARC Centre of Excellence for Transformative Meta-O ptical Systems Research School of PhysicsThe Australian National UniversityCanberra 0200ACTAustralia

Self-assembled GaN nanorods were grown by metal-organic chemical vapor deposition.A highly regular rosette-shaped cathodoluminescence pattern in the GaN nanorods is observed,where its origin is helpful to deepen the understanding of GaN nanorod *** pattern forms at the very early stages of nanorod growth,which consists of yellow luminescence at the edges and the non-luminous region at six vertices of the *** clarify its origin,we carried out detailed cathodoluminescence studies,electron microscopy studies and nanoscale secondary ion mass spectrometry at both the nanorod surface and *** found the pattern is not related to optical resonance modes or polarity inversion,which are commonly reported in GaN *** chemical composition and strain analysis,we found higher carbon and nitrogen cluster concentration and large compressive strain at the pattern *** pattern formation may relate to facet preferential distribution of non-radiative recombination centers related to excess carbon/*** work provides an insight into strain distribution and defect-related emission in GaN nanorod,which is critical for future optoelectronic applications.

关键词： metalorganic chemical vapor deposition(MOCVD) GaN nanorod cathodoluminescence yellow luminescence non-radiative recombination

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Growth and optical properties of InxGa1-xP nanowires synthesized by selective-area epitaxy

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Nano Research 2017年第2期10卷 672-682页

作者： Alexander Berg Philippe Caroff Naeem Shahid Mark N. Lockrey Xiaoming Yuan Magnus T. Borgstrom Hark Hoe Tan chennupati jagadish Solid State Physics and NanoLund Lund University Box 118 SE-221 00 Lund Sweden Department of Electronic Materials Engineering Research School of Physics and Engineering The Australian National University Canberra ACT2601 Australia Australian National Fabrication Facility Research School of Physics and Engineering The Australian National University Canberra ACT 2601 Australia

Ternary III-V nanowires （NWs） cover a wide range of wavelengths in the solar spectrum and would greatly benefit from being synthesized as position-controlled arrays for improved vertical yield, reproducibility, and tunable optical absorption. Here, we report on successful selective-area epitaxy of metal-particle-free vertical InxGa1-xP NW arrays using metal-organic vapor phase epitaxy and detail their optical properties. A systematic growth study establishes the range of suitable growth parameters to obtain uniform NW growth over a large array. The optical properties of the NWs were characterized by room-temperature cathodoluminescence spectroscopy. Tunability of the emission wavelength from 870 nm to approximately 800 nm was achieved. Transmission electron microscopy and energy dispersive X-ray measurements performed on cross- section samples revealed a pure wurtzite crystal structure with very few stacking faults and a slight composition gradient along the NW growth axis.

关键词： nanowire InGaP selective-area epitaxy cathodoluminescence energy-dispersive X-ray spectroscopy

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Atomically thin optical lenses and gratings

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Light(Science & Applications) 2016年第1期5卷 562-569页

作者： Jiong Yang Zhu Wang Fan Wang Renjing Xu Jin Tao Shuang Zhang Qinghua Qin Barry Luther-Davies chennupati jagadish Zongfu Yu Yuerui Lu Research School of Engineering College of Engineering and Computer Sciencethe Australian National UniversityCanberraACT 2601Australia Department of Electrical and Computer Engineering University of WisconsinMadisonWI 53706USA Department of Electronic Materials Engineering Research School of Physics and Engineeringthe Australian National UniversityCanberraACT 2601Australia CUDOS Laser Physics CentreResearch School of Physics and Engineeringthe Australian National UniversityCanberraACT 2601Australia

Two-dimensional(2D)materials have emerged as promising candidates for miniaturized optoelectronic devices due to their strong inelastic interactions with *** the other hand,a miniaturized optical system also requires strong elastic light–matter interactions to control the flow of *** we report that a single-layer molybdenum disulfide(MoS2)has a giant optical path length(OPL),around one order of magnitude larger than that from a single-layer of *** such giant OPL to engineer the phase front of optical beams we have demonstrated,to the best of our knowledge,the world’s thinnest optical lens consisting of a few layers of MoS2 less than 6.3 nm *** taking advantage of the giant elastic scattering efficiency in ultra-thin high-index 2D materials,we also demonstrated high-efficiency gratings based on a single-or few-layers of *** capability of manipulating the flow of light in 2D materials opens an exciting avenue towards unprecedented miniaturization of optical components and the integration of advanced optical *** importantly,the unique and large tunability of the refractive index by electric field in layered MoS2 will enable various applications in electrically tunable atomically thin optical components,such as micro-lenses with electrically tunable focal lengths,electrical tunable phase shifters with ultra-high accuracy,which cannot be realized by conventional bulk solids.

关键词： atomically thin grating micro-lens MoS2 two-dimensional

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Exploring the band structure of Wurtzite InAs nanowires using photocurrent spectroscopy

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Nano Research 2020年第6期13卷 1586-1591页

作者： Seyyedesadaf Pournia Samuel Linser Giriraj Jnawali Howard E.Jackson Leigh M.Smith Amira Ameruddin Philippe Caroff Jennifer Wong-Leung Hark Hoe Tan chennupati jagadish Hannah J.Joyce Department of Physics University of CincinnatiCincinnatiOH45221-0011USA Department of Electronic Materials Engineering Research School of PhysicsThe Australian National UniversityCanberraACT2601Australia Department of Engineering University of Cambridge9 JJ Thomson AvenueCambridgeCB30FAUK

Nano Research volume We use polarized photocurrent spectroscopy in a nanowire device to investigate the band structure of hexagonal Wurtzite *** of optical transitions between four valence bands and two conduction bands are observed which are consistent with the symmetries expected from group *** ground state transition energy identified from photocurrent spectra is seen to be consistent with photoluminescence emitted from a cluster of nanowires from the same growth *** the energies of the observed bands we determine the spin orbit and crystal field energies in Wurtzite *** information is vital to the development of crystal phase engineering of this important III-V semiconductor.

关键词： nanowires Wurtzite InAs photocurrent measurement optical selection rules energy band structure

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High-speed multiwavelength InGaAs/InP quantum well nanowire array micro-LEDs for next generation optical communications

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Opto-Electronic Science 2023年第5期2卷 1-11页

作者： Fanlu Zhang Zhicheng Su Zhe Li Yi Zhu Nikita Gagrani Ziyuan Li Mark Lockrey Li Li Igor Aharonovich Yuerui Lu Hark Hoe Tan chennupati jagadish Lan Fu Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems Department of Electronic Materials EngineeringResearch School of PhysicsThe Australian National UniversityCanberra ACT 2601Australia School of Electronic Science and Engineering Southeast UniversityNanjing 210096China Microstructural Analysis Unit University of Technology SydneySydney NSW 2007Australia Australian National Fabrication Facility ACT Node Research School of PhysicsThe Australian National UniversityCanberra ACT 2601Australia ARC Centre of Excellence for Transformative Meta-Optical Systems Faculty of ScienceUniversity of Technology SydneySydney NSW 2007Australia School of Engineering College of Engineering and Computer ScienceThe Australia National UniversityCanberraCanberra ACT 2601Australia

Miniaturized light sources at telecommunication wavelengths are essential components for on-chip optical communication ***,we report the growth and fabrication of highly uniform p-i-n core-shell InGaAs/InP single quantum well(QW)nanowire array light emitting diodes(LEDs)with multi-wavelength and high-speed ***-dimensional cathodoluminescence mapping reveals that axial and radial QWs in the nanowire structure contribute to strong emission at the wavelength of~1.35 and~1.55μm,respectively,ideal for low-loss optical *** a result of simultaneous contributions from both axial and radial QWs,broadband electroluminescence emission with a linewidth of 286 nm is achieved with a peak power of~17μW.A large spectral blueshift is observed with the increase of applied bias,which is ascribed to the band-filling effect based on device simulation,and enables voltage tunable multi-wavelength operation at the telecommunication wavelength ***-wavelength operation is also achieved by fabricating nanowire array LEDs with different pitch sizes on the same substrate,leading to QW formation with different emission ***,high-speed GHz-level modulation and small pixel size LED are demonstrated,showing the promise for ultrafast operation and ultracompact *** voltage and pitch size controlled multi-wavelength highspeed nanowire array LED presents a compact and efficient scheme for developing high-performance nanoscale light sources for future optical communication applications.

关键词： InGaAs/InP quantum well nanowires LEDs

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Self-frequency-conversion nanowire lasers

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Light(Science & Applications) 2022年第6期11卷 1109-1117页

作者： Ruixuan Yi Xutao Zhang Chen Li Bijun Zhao Jing Wang Zhiwen Li Xuetao Gan Li Li Ziyuan Li Fanlu Zhang Liang Fang Naiyin Wang Pingping Chen Wei Lu Lan Fu Jianlin Zhao Hark Hoe Tan chennupati jagadish Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technologyand Shaanxi Key Laboratory of Optical Information TechnologySchool of Physical Science and TechnologyNorthwestern Polytechnical University710129 Xi'anChina Frontiers Science Center for Flexible Electronics Xi'an Institute of Flexible Electronics(IFE)and Xi'an Institute of Biomedical Materials&EngineeringNorthwestern Polytechnical University127 West Youyi Road710072 Xi'anChina Department of Electronic Materials Engineering Research School of PhysicsThe Australian National UniversityCanberraACT 2601Australia State Key Laboratory for Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of Sciences500 Yutian Road200083 ShanghaiChina University of Chinese Academy of Sciences 19 Yuquan Road100049 BeijingChina School of Physical Science and Technology ShanghaiTech University393 Middle Huaxia RoadPudong District201210 ShanghaiChina ARC Centre of Excellence for Transformative Meta-Optical Systems Research School of PhysicsThe Australian National UniversityCanberraACT 2601Australia

Semiconductor nanowires(NWs)could simultaneously provide gain medium and optical cavity for performing nanoscale lasers with easy integration,ultracompact footprint,and low energy ***,we report Ⅲ-Ⅴsemiconductor NW lasers can also be used for self-frequency conversion to extend their output wavelengths,as a result of their non-centrosymmetric crystal structure and strongly localized optical field in the *** a GaAs/In0.16Ga0.84As core/shell NW lasing at 1016 nm,an extra visible laser output at 508 nm is obtained via the process of second-harmonic generation,as confirmed by the far-field polarization dependence measurements and numerical *** another NW laser with a larger diameter which supports multiple fundamental lasing wavelengths,multiple self-frequency-conversion lasing modes are observed due to second-harmonic generation and sum-frequency *** demonstrated self-frequency conversion of NW lasers opens an avenue for extending the working wavelengths of nanoscale lasers,even to the deep ultraviolet and THz range.

关键词： lasers polarization lasing

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