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High-speed silicon photonic electro-optic kerr modulation

Photonics Research 2024年第1期12卷 51-60页

作者： JONATHAN PELTIER WEIWEI ZHANg LEOPOLD VIROT CHRISTIAN LAFFORgUE LUCAS DENIEL DELPHINE MARRIS-MORINI gUY AUBIN FARAH AMAR DENH TRAN XINgZHAO YAN callum g.littlejohns.carlos.alons.-ramos.ke li DAVID J.THOMSON gRAHAM REED LAURENT VIVIEN University Paris-Saclay CNRSCentre for Nanoscience and Nanotechnology(C2N)Palaiseau 91120France University grenoble Alpes CEALETIGrenoble 38000France Optoelectronics Research Centre Zepler Institute for Photonics and NanoelectronicsFaculty of Engineering and Physical SciencesUniversity of SouthamptonSouthampton SO171BJUK

Silicon-based electro-optic modulators contribute to easing the integration of high-speed and low-power consumption circuits for classical optical communications and data *** the plasma dispersion modulation,an alternative solution in silicon is to exploit the DC kerr effect,which generates an equivalent linear electro-optical effect enabled by applying a large DC electric *** some theoretical and experimental studies have shown its existence in silicon,limited contributions relative to plasma dispersion have been achieved in high-speed modulation so *** paper presents high-speed optical modulation based on the DC kerr effect in silicon PIN *** contributions of both plasma dispersion and kerr effects have been analyzed in different waveguide configurations,and we demonstrated that the kerr induced modulation is dominant when a high external DC electric field is applied in PIN ***-speed optical modulation response is analyzed,and eye diagrams up to 80 gbit/s in NRZ format are obtained under a *** of 30 *** work paves the way to exploit the kerr effect to generate high-speed Pockels-like optical modulation.

关键词： waveguide dispersion effect

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维普期刊数据库

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Universal silicon ring resonator for error-free transmission links

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Photonics Research 2024年第4期12卷 701-711页

作者： JUNBO ZHU WEIWEI ZHANg ke li BHARAT PANT MARTIN EBERT XINgZHAO YAN MEHDI BANAKAR DEHN T.TRAN callum g.littlejohns FUWAN gAN gRAHAM REED DAVID J.THOMSON Optoelectronics Research Centre University of SouthamptonSouthampton SO171BJUK National key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China University of Chinese Academy of Sciences Beijing 100049China Peng Cheng Laboratory ShenzhenChina

We report the design, fabrication, and characterization of a universal silicon PN junction ring resonator for C band error-free communication links operated up to 50 gb/s with co-designed optical modulation and detection performance. The universal p-n junction ring device shows co-designed detection responsivity up to 0.84 A/W, in conjunction with a modulation efficiency of -4 V·mm and>8 d B optical modulation extinction ratio, enabling C band 50 gb/s NRZ communication link with a bit error rate≤3×10^(-12).

关键词： gb/s resonator communication

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维普期刊数据库

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ge-on-Si modulators operating at mid-infrared wavelengths up to 8 μm

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Photonics Research 2019年第8期7卷 828-836页

作者： TIANTIAN li MILOS NEDELJKOVIC NANNICHA HATTASAN WEI CAO ZHIBO QU callum glittlejohns JORDI SOLER PENADES LORENZO MASTRONARDI VINITA MITTAL DANIEL BENEDIKOVIC DAVID JTHOMSON FREDERIC YgARDES HEQUAN WU ZHIPINg ZHOU gORAN ZMASHANOVICH Optoelectronics Research Centre University of SouthamptonSouthampton SO171BJUK State key Laboratory of Advanced Optical Communication Systems and Networks School of Electronics Engineering and Computer SciencePeking UniversityBeijing100871China Silicon Technologies Centre of Excellence Nanyang Technological UniversitySingapore639798Singapore Centre de Nanosciences et de Nanotechnologies CNRSUniv.Paris-SudUniversitéParis-SaclayC2N-Palaiseau91120PalaiseauFrance

We report mid-infrared ge-on-Si waveguide-based PIN diode modulators operating at wavelengths of 3.8 and8 μm. Fabricated 1-mm-long electro-absorption devices exhibit a modulation depth of >35 dB with a 7 V forward bias at 3.8 μm, and a similar 1-mm-long Mach–Zehnder modulator has a Vπ· L of 0.47 V · cm. Driven by a 2.5 Vpp RF signal, 60 MHz on-off keying modulation was demonstrated. Electro-absorption modulation at 8 μm was demonstrated preliminarily, with the device performance limited by large contact separation and high contact resistance.

关键词： PIN frame EAM ge-on-Si modulators

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