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Controlled growth of vertically stacked In_(2)Se_(3)/WSe_(2) heterostructures for ultrahigh responsivity photodetector

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Nano Research 2024年第3期17卷 1856-1863页

作者： Cheng Zhang biyuan Zheng Guangcheng Wu Xueying Liu Jiaxin Wu Chengdong yao Yizhe Wang Zilan Tang Ying Chen Lizhen Fang Luying Huang Dong Li Shengman Li Anlian Pan Key Laboratory for Micro-Nano Physics and Technology of Hunan Province State Key Laboratory of Chemo/Biosensing and ChemometricsCollege of Materials Science and EngineeringHunan UniversityChangsha 410082China

Transition metal dichalcogenides(TMDCs)are promising candidates for future optoelectronic devices accounting for their high carrier mobility and excellent quantum efficiency.However,the limited light absorption efficiency in atomically thin layers significantly hinders photocarrier generation,thereby impairing the optoelectronic performance and hindering practical applications.Herein,we successfully synthesized In_(2)Se_(3)/WSe_(2) heterostructures through a typical two-step chemical vapor deposition(CVD)method.The In_(2)Se_(3) nanosheet with strong light absorption capability,serving as the light absorption layer,was integrated with the monolayer WSe_(2),enhancing the photosensitivity of WSe_(2) significantly.Upon laser irradiation with a wavelength of 520 nm,the In_(2)Se_(3)/WSe_(2) heterostructure device shows an ultrahigh photoresponsivity with a value as high as 2333.5 A/W and a remarkable detectivity reaching up to 6.7×10^(12) Jones,which is the highest among almost the reported TMDCs-based heterostructures grown via CVD even some fabricated by mechanical exfoliation(ME).Combing the advantages of CVD method such as large scale,high yield,and clean interface,the In_(2)Se_(3)/WSe_(2) heterostructures would provide a novel path for future high-performance optoelectronic device.

关键词： transition metal dichalcogenides(TMDCs) In_(2)Se_(3) heterostructure photodetector ultrahigh responsivity

Epitaxial van der Waals contacts for low schottky barrier MoS_(2) field effect transistors

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Nano Research 2023年第9期16卷 11832-11838页

作者： Huawei Liu Lizhen Fang Xiaoli Zhu Chenguang Zhu Xingxia Sun Gengzhao Xu biyuan Zheng Ying Liu Ziyu Luo Hui Wang Chengdong yao Dong Li Anlian Pan Key Laboratory for Micro-Nano Physics and Technology of Hunan Province State Key Laboratory of Chemo/Biosensing and ChemometricsCollege of Materials Science and EngineeringHunan UniversityChangsha 410082China Hunan Institute of Optoelectronic Integration Hunan UniversityChangsha 410082China Suzhou Institute of Nano-tech and Nano-Bionics Chinese Academy of SciencesSuzhou 215123China

Small contact resistance and low Schottky barrier height(SBH)are the keys to energy-efficient electronics and optoelectronics.Two-dimensional(2D)semiconductors-based field effect transistors(FETs),holding great promise for next-generation information circuits,still suffer from poor contact quality at the metal–semiconductor junction interface,which severely hinders their further applications.Here,a novel contact strategy is proposed,where Bi_(2)Te_(3)nanosheets with high conductivity were in-situ epitaxially grown on MoS_(2)as van der Waals contacts,which can effectively avoid the damage to MoS_(2)caused during the device manufacturing process,leading to a high-performance MoS_(2)FET.Moreover,the small work function difference between Bi_(2)Te_(3)and MoS_(2)(Bi_(2)Te_(3):4.31 eV,MoS_(2):4.37 eV,measured by Kelvin probe force microscopy(KPFM)),enables small band bending and Ohmic contact at the junction interface.Electrical characterizations indicate that the MoS_(2)FET device with Bi_(2)Te_(3)contacts possesses a high current on/off ratio(5×107),large effective carrier mobility(90 cm^(2)/(V·s)),and low flat-band SBH(60 meV),which is favorable as compared with MoS_(2)FET with traditional Cr/Au electrodes contacts,and superior to the vast majority of the reported chemical vapor deposition(CVD)MoS_(2)-based FET device.The demonstration of epitaxial van der Waals Bi_(2)Te_(3)contacts will facilitate the application of 2D MoS_(2)nanosheet in next-generation low-power consumption electronics and optoelectronics.

关键词： heterojunction van der Waals epitaxial mobility Schottky barrier transistors

二维铁电半导体层级处理模块设计及低功耗高性能人工视觉系统应用

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Science Bulletin 2024年第4期69卷 473-482页

作者：吴广成向立王文强姚程栋颜泽毅张成吴家鑫刘勇郑弼元刘华伟胡城伟孙兴霞朱晨光王一喆熊雄吴燕庆高亮李东潘安练李晟曼 Key Laboratory for Micro-Nano Physics and Technology of Hunan Province State Key Laboratory of Chemo/Biosensing and ChemometricsCollege of Materials Science and EngineeringHunan UniversityChangsha 410082China Hunan Institute of Optoelectronic Integration Hunan UniversityChangsha 410082China Hunan Institute of Advanced Sensing and Information Technology Xiangtan UniversityXiangtan 411105China School of Integrated Circuits Peking UniversityBeijing 100871China Wuhan National Laboratory for Optoelectronics(WNLO) Huazhong University of Science and Technology(HUST)Wuhan 430074China

The growth of data and Internet of Things challenges traditional hardware,which encounters efficiency and power issues owing to separate functional units for sensors,memory,and computation.In this study,we designed an a-phase indium selenide(a-In_(2)Se_(3))transistor,which is a two-dimensional ferroelectric semiconductor as the channel material,to create artificial optic-neural and electro-neural synapses,enabling cutting-edge processing-in-sensor(PIS)and computing-in-memory(CIM)functionalities.As an optic-neural synapse for low-level sensory processing,the a-In_(2)Se_(3)transistor exhibits a high photoresponsivity(2855 A/W)and detectivity(2.91×10^(14)Jones),facilitating efficient feature extraction.For high-level processing tasks as an electro-neural synapse,it offers a fast program/erase speed of 40 ns/50μs and ultralow energy consumption of 0.37 aJ/spike.An AI vision system using a-In_(2)Se_(3)transistors has been demonstrated.It achieved an impressive recognition accuracy of 92.63%within 12 epochs owing to the synergistic combination of the PIS and CIM functionalities.This study demonstrates the potential of the a-In_(2)Se_(3)transistor in future vision hardware,enhancing processing,power efficiency,and AI applications.

关键词： Two-dimensional ferroelectric semiconductor Processing-in-sensor Computing-in-memory Synaptic device Artificial-intelligence vision system

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“限薪令”能抑制国企过度投资吗?

南方金融 2022年第7期 75-86页

作者：姚晖孙碧媛南京信息工程大学商学院江苏南京210044

全面推进国企治理现代化,是推动实现国企高质量发展的必然要求,而完善国企薪酬制度和改善投资质量是加强国企治理的重要内容。本文基于沪深A股上市公司2010-2019年的面板数据,应用双重差分法对2014年出台的“限薪令”对国企过度投资的... 详细信息

全面推进国企治理现代化,是推动实现国企高质量发展的必然要求,而完善国企薪酬制度和改善投资质量是加强国企治理的重要内容。本文基于沪深A股上市公司2010-2019年的面板数据,应用双重差分法对2014年出台的“限薪令”对国企过度投资的影响进行检验。研究结果表明:总的来看,“限薪令”政策显著抑制了国企的过度投资行为,这种影响主要通过缩小企业内部薪酬差距、降低管理者风险偏好两条路径发挥作用;相较于竞争性国企,“限薪令”对垄断性国企过度投资行为的抑制效果更为明显;对高管以股票期权为股权激励方式,会弱化“限薪令”对国企过度投资的抑制。上述研究结论的政策启示:要进一步完善国企高管薪酬制度,实现高管薪酬公开化与合理化,减少高管自利行为;提高对国企高管的激励水平,在国有控股上市公司中合理推广股权激励方式,兼顾薪酬公平与企业效率;积极培育和发展职业经理人市场,在国企中全面推广职业经理人制度,利用职业竞争提升国企高管积极性。

关键词：企业管理薪酬制度国有企业国企改革限薪令投资效率

Simulation and Optimization of Membrane Air Suspension Failure

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Simulation and Optimization of Membrane Air Suspension Failu...

Efficacy of integrative medicine in deficiency of both qi and yin in the rat model of type 2 diabetes

2022中国汽车工程学会年会暨展览会

作者： Wu Xiaoyi Chang Haixiao Li Gang Shan Shuai Li yao Zhu biyuan China FAW Group Co. Ltd.Product Development Center State Key Laboratory of Technology on Automobile NVH & Safety Control

For the design requirements of air suspension,the failure mode analysis and optimization through suspension system level simulation is necessary.Taking the air suspension equipped with membrane air spring as an example,a 3 D air spring FEM model is generated based on the simplified axisymmetric model,finally the air suspension system model is established,reproduce the failure phenomenon based on the suspension model,and thus provides a complete set of simulation analysis method with high precision.On this basis,the relationship between design parameters and structural stability is analyzed,and a structural stability verification method based on bench test is proposed.

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Journal of Traditional Chinese Medical Sciences 2015年第4期2卷 258-263页

作者： Jing Zhao Jinna Liu Bangzhong Wang Yuanchao yao Guangxia Zhang biyuan Liu Yuanfeng Zhang Tian Xie Ming Xie School of Basic Medical Science Beijing University of Chinese MedicineBeijing 100029China

Objective:To establish a rat model of type 2 diabetes(T2DM)manifesting the Chinese medicine syndrome pattern of both qi and yin deficiency for evaluating the efficacy of a Chinese herbal formula(CHF),integrative medicine(IM),and pioglitazone(PIO)on T2DM indicators in the animal model.Methods:The rat model was induced by a high-fat diet(HFD)and streptozotocin(STZ,30 mg/kg).CHF(3.4 g/kg),PIO(2.7 mg/kg),and IM(3.4 g CHF+2.7 mg PIO)were administered to rats once daily for 14 days.Related laboratory parameters were observed.Results:Diabetic rats showed unsmooth fur,alopecia,reduced activity,huddling,somnolence,depression,pale or reddened tongue,damp/dark red tail,and high levels of water and food intake,urine volume,and stool weight,but weakened grip strength.Low levels of serum SOD,Nat-Kt-ATPase,cAMP/cGMP,and a high level of iNOS were observed.Hyperglycemia,hyperinsulinemia,insulin resistance,high levels of serum glucagon/IDE and pancreatic amylin,and low serum and pancreatic SS levels were evident as well.Conclusions:A rat model of T2DM with both qi and yin deficiency was successfully replicated.CHF appeared to be more efficacious than IM and PIO in the rat model of qi and yin deficiency pattern of T2DM,though IM and PIO were each found to have their merits and drawbacks in attenuating T2DM indicators in the rat model.

关键词： Type 2 diabetes Deficiency of both qi and yin Integrative medicine Chinese herbal formula

V_2O_5/TiO_2烟气脱硝催化剂的钾、钠、锌、磷中毒及再生

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东南大学学报（自然科学版） 2013年第3期43卷 548-552页

作者：仲兆平张茜芸杨碧源姚杰东南大学能源热转换及其过程测控教育部重点实验室南京210096

为研究SCR脱硝催化剂的钾、钠、锌、磷中毒,采用K,Na,Zn的氯盐和P的铵盐作为V2O5/TiO2催化剂中毒的前驱体,研究了4种物质对氨法SCR脱硝反应的影响.通过比较水洗、酸洗和氯化铵洗涤3种再生方式,对钾盐中毒的V2O5/TiO2催化剂进行了再生性... 详细信息

为研究SCR脱硝催化剂的钾、钠、锌、磷中毒,采用K,Na,Zn的氯盐和P的铵盐作为V2O5/TiO2催化剂中毒的前驱体,研究了4种物质对氨法SCR脱硝反应的影响.通过比较水洗、酸洗和氯化铵洗涤3种再生方式,对钾盐中毒的V2O5/TiO2催化剂进行了再生性能研究.最后对于新型抗中毒催化剂的制备进行了探索.实验结果表明:钾盐对于V2O5/TiO2催化剂的毒化作用最强;酸洗具有最佳的再生效果,钾盐中毒的催化剂经酸洗再生后,脱硝活性在一定条件下高于新鲜催化剂;通过添加助剂磷钨酸,V2O5/TiO2催化剂的活性温度窗口得以拓宽,且抗钾盐中毒能力也得到了提高.

关键词：选择性催化还原氮氧化物 V2O5 TiO2催化剂中毒再生

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灰茅根鼻渊丸质量标准研究

中国民族民间医药 2024年第11期33卷 35-39页

作者：周轲李文伟杨鹏伟陈朝晖姚世霞朱旭江杨光远甘肃省药品检验研究院甘肃兰州730070 甘肃省陇南市徽县人民医院陇南742300

目的:建立灰茅根鼻渊丸质量标准。方法:采用TLC法对处方中黄芩、浙贝母进行定性鉴别;利用HPLC法,Kromasil 100-5 C_(18)(4.6 mm×250 mm,5μm)色谱柱分离,甲醇-0.2%磷酸(40∶60)流动相洗脱,检测波长280 nm,流速1.0 mL·min^(-1),柱温30... 详细信息

目的:建立灰茅根鼻渊丸质量标准。方法:采用TLC法对处方中黄芩、浙贝母进行定性鉴别;利用HPLC法,Kromasil 100-5 C_(18)(4.6 mm×250 mm,5μm)色谱柱分离,甲醇-0.2%磷酸(40∶60)流动相洗脱,检测波长280 nm,流速1.0 mL·min^(-1),柱温30℃,进样量10μL,测定灰茅根鼻渊丸中的黄芩苷含量。结果:薄层色谱斑点显色清晰,分离效果好,阴性无干扰,专属性强,重现性较好;黄芩苷在19.11~764.40μg/mL浓度范围内,与峰面积呈良好的线性关系(r=0.9999),平均加样回收率为97.37%,RSD为2.44%(n=9)。结论:所建立的质量控制方法符合质量标准要求,专属性强、重现性好,可用于灰茅根鼻渊丸的质量控制。

关键词：灰茅根鼻渊丸质量标准 TLC HPLC 黄芩苷

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中孕期弹性超声成像宫颈机能智能定量分析预测自发性早产的临床应用价值

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诊断学理论与实践 2021年第5期20卷 450-455页

作者：何碧媛周毓青姚秉彝曹力包丽上海市长宁区妇幼保健(华东师范大学附属妇幼保健院)超声医学科上海200011 上海市长宁区妇幼保健(华东师范大学附属妇幼保健院)产科上海200011

目的:探讨经阴道宫颈弹性超声成像联合宫颈长度测量预测中孕期孕妇自发性早产(spontaneous preterm birth,sPTB)的应用价值。方法:纳入2019年1月1日至2020年12月31日在我院进行产前检查的单胎妊娠孕妇431名,依据早产定义分为病例组(31... 详细信息

目的:探讨经阴道宫颈弹性超声成像联合宫颈长度测量预测中孕期孕妇自发性早产(spontaneous preterm birth,sPTB)的应用价值。方法:纳入2019年1月1日至2020年12月31日在我院进行产前检查的单胎妊娠孕妇431名,依据早产定义分为病例组(31例早产)和对照组(400例足月产),所有孕妇于中孕期采用经阴道超声测量宫颈长度(cervical length,CL),同时进行宫颈弹性超声成像,利用宫颈机能智能定量分析软件获得弹性超声参数,即弹性对比指数(elasticity contrast index,ECI)、硬度比值(hardness ratio,HR)、宫颈内口应变值(internal ostium,IOS)、宫颈外口应变值(external ostium,EOS)、宫颈内口与外口比值(IOS/EOS比值)。比较以上参数在2组间的差异,并采用受试者操作特征(receiver operating characteristic,ROC)曲线分析以上参数预测中孕期孕妇发生sPTB的临床价值。结果:病例组的CL低于对照组,而ECI、IOS及IOS/EOS比值高于对照组;ROC曲线显示,在各弹性参数中,IOS/EOS比值(最佳阈值为0.885)的曲线下面积(area under curve,AUC)相对较大(0.696),其预测中孕期孕妇sPTB的灵敏度和特异度为73.8%和64.2%;CL预测中孕期孕妇sPTB的AUC为0.717,取CL≤23.8 mm时其预测灵敏度和特异度分别为71.4%和74.2%;IOS/EOS比值(≥0.885)联合CL≤23.8 mm预测中孕期孕妇sPTB的AUC(0.771)和灵敏度较高(83.3%)。结论:在中孕期孕妇中,进行阴道宫颈弹性超声智能宫颈机能定量分析,对预测sPTB发生具有一定的临床价值,其联合CL测量可提高对sPTB的预测价值。

关键词：超声检查弹性成像技术宫颈长度早产