检索结果-南通市图书馆

HfO_(2)-based ferroelectric thin film and memory device applications in the post-Moore era:A review

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Fundamental Research 2023年第3期3卷 332-345页

作者： Jiajia Liao Siwei Dai Ren-Ci Peng Jiangheng Yang binjian zeng Min Liao Yichun Zhou a School of Advanced Materials and Nanotechnology Xidian UniversityXi’an 710126China Frontier Research Center of Thin Films and Coatings for Device Applications Academy of Advanced Interdisciplinary ResearchXidian UniversityXi’an 710126China Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education School of Materials Science and EngineeringXiangtan UniversityXiangtan 411105China

The rapid development of 5G,big data,and Internet of Things(IoT)technologies is urgently required for novel non-volatile memory devices with low power consumption,fast read/write speed,and high reliability,which are crucial for high-performance *** memory has undergone extensive investigation as a viable alternative for commercial applications since the post-Moore ***,conventional perovskite-structure ferroelectrics(e.g.,PbZr_(x)Ti_(1-x)O_(3))encounter severe limitations for high-density integration owing to the size effect of ferroelectricity and incompatibility with complementary metal-oxide-semiconductor *** 2011,the ferroelectric field has been primarily focused on HfO_(2)-based ferroelectric thin films owing to their exceptional *** reviews discussing the control of ferroelectricity and device applications *** is believed that a comprehensive understanding of mechanisms based on industrial requirements and concerns is necessary,such as the wake-up effect and fatigue *** mechanisms reflect the atomic structures of the materials as well as the device ***,a review focusing on phase stability and domain structure is *** addition,the recent progress in related ferroelectric memory devices and their challenges is briefly discussed.

关键词： Hfo_(2)ferroelectrics Phase stability Domain structure Wake-up Fatigue Ferroelectric field-effect transistor

Robustly stable intermediate memory states in HfO_(2)-based ferroelectric field-effect transistors

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Journal of Materiomics 2022年第3期8卷 685-692页

作者： Chen Liu binjian zeng Siwei Dai Shuaizhi Zheng Qiangxiang Peng Jinjuan Xiang Jianfeng Gao Jie Zhao Jincheng Zhang Min Liao Yichun Zhou Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education School of Materials Science and EngineeringXiangtan UniversityXiangtan411105China College of Civil Engineering and Mechanics Xiangtan UniversityXiangtan411105China School of Advanced Materials and Nanotechnology Xidian UniversityXi'an710071China Integrated Circuit Advanced Process R&D Center and Institute of Microelectronics of Chinese Academy of Sciences Beijing100029China State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian UniversityXi'an710071China

Multilevel ferroelectric field-effect transistors(FeFETs)integrated with HfO_(2)-based ferroelectric thin films demonstrate tremendous potential in high-speed massive data storage and neuromorphic computing ***,few works have focused on the stability of the multiple memory states in the HfO_(2)-based *** we firstly report the write/read disturb effects on the multiple memory states in the Hf_(0.5)Zr_(0.5)O_(2)(HZO)-based *** multiple memory states in HZO-based FeFETs do not show obvious degradation with the write and read disturb ***,the retention characteristics of the intermediate memory states in HZO-based FeFETs with unsaturated ferroelectric polarizations are better than that of the memory state with saturated ferroelectric *** the deep analysis of the operation principle of in HZO-based FeFETs,we speculate that the better retention properties of intermediate memory states are determined by the less ferroelectric polarization degradation and the weaker ferroelectric polarization *** experimental and theoretical evidences confirm that the long-term stability of the intermediate memory states in HZO-based FeFETs are as robust as that of the saturated memory state,laying a solid foundation for their practical applications.

关键词： Ferroelectric fieldeffect transistors(FeFETs) Hf_(0.5)Zr_(0.5)O_(2)(HZO) Multiple memory states Write/read disturb Retention

Improved ferroelectric properties of CMOS back-end-of-line compatible Hf_(0.5)Zr_(0.5)O_(2)thin films by introducing dielectric layers

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Journal of Materiomics 2024年第2期10卷 277-284页

作者： Changfan Ju binjian zeng Ziqi Luo Zhibin Yang Puqi Hao Luocheng Liao Qijun Yang Qiangxiang Peng Shuaizhi Zheng Yichun Zhou Min Liao Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education School of Materials Science and EngineeringXiangtan UniversityXiangtan411105China School of Advanced Materials and Nanotechnology Xidian UniversityXi'an710126China

Hf_(0.5)Zr_(0.5)O_(2)(HZO)ferroelectric thin films have gained significant attention for the development of next-generation ferroelectric memories by complementary-metal-oxide semiconductor(CMOS)back-end-of-line(BEOL)processing,due to their relatively low crystallization ***,it remains challenging to achieve excellent ferroelectric properties with post deposition annealing(PDA)process at a BEOL compatible *** these lines,in this work,it is demonstrated that the ferroelec-tricity of 15 nm thick HZO thin film prepared by PDA process at 400℃can be improved to varying degrees,via depositing 2 nm thick dielectric layers of Al_(2)O_(3),HfO_(2),or ZrO_(2)at either the bottom or the top of the ***,the HZO thin film with the top-Al_(2)O_(3)layer exhibits remarkable ferroelectric prop-erties,which are independent of the thickness of *** 6 nm thick HZO thin film shows a total remanent polarization(2Pr)of 31 mC/cm^(2)under an operating voltage of 2.5 *** results represent a significant advancement in the fabrication of high-performance,BEOL compatible ferroelectric mem-ories,as compared to previously reported state-of-the-art works.

关键词： Al_(2)O_(3) BEOL processing Ferroelectricity Hf_(0.5)Zr_(0.5)O_(2)(HZO)

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

针刺对老年膝骨关节炎患者生活质量的影响

中外医学研究 2015年第18期13卷 117-118页

作者：任志强姚云曾金明上海中冶医院上海200941

目的:观察针刺疗法对老年膝骨关节炎患者生活质量的影响。方法:采用随机数字表法将61例患者随机纳入治疗组(31例)和对照组(30例)。治疗组采用针刺疗法,取患膝鹤顶、内膝眼、膑尖、犊鼻、足三里、三阴交、阿是穴,1次/d,10次为一疗程,共... 详细信息

目的:观察针刺疗法对老年膝骨关节炎患者生活质量的影响。方法:采用随机数字表法将61例患者随机纳入治疗组(31例)和对照组(30例)。治疗组采用针刺疗法,取患膝鹤顶、内膝眼、膑尖、犊鼻、足三里、三阴交、阿是穴,1次/d,10次为一疗程,共治疗两个疗程;对照组予口服消炎痛片,3次/d,25 mg/次,10 d为一疗程,共治疗两个疗程。在治疗前及治疗后分别记录两组的SF-36量表评分。结果:治疗组生理功能、躯体疼痛评分治疗前后比较差异有统计学意义(P<0.05);治疗后两组生理功能、总体健康评分比较差异有统计学意义(P<0.05)。结论:针刺疗法可以明显改善老年膝骨关节炎患者的生理功能及疼痛情况,从而提高患者的生活质量。

关键词：膝骨关节炎老年针刺疗法生活质量