HfO_(2)-based ferroelectric thin film and memory device applications in the post-Moore era:A review
作者机构：a School of Advanced Materials and NanotechnologyXidian UniversityXi’an 710126China Frontier Research Center of Thin Films and Coatings for Device ApplicationsAcademy of Advanced Interdisciplinary ResearchXidian UniversityXi’an 710126China Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of EducationSchool of Materials Science and EngineeringXiangtan UniversityXiangtan 411105China
出 版 物：《Fundamental Research》 (自然科学基础研究（英文版）)
年 卷 期：2023年第3卷第3期
页 面：332-345页
核心收录：
学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学]
基 金：the National Natural Science Foundation of China(11932016 52122205 and 52072324)for their financial support of this work
主 题：Hfo_(2)ferroelectrics Phase stability Domain structure Wake-up Fatigue Ferroelectric field-effect transistor
摘 要：The rapid development of 5G,big data,and Internet of Things(IoT)technologies is urgently required for novel non-volatile memory devices with low power consumption,fast read/write speed,and high reliability,which are crucial for high-performance *** memory has undergone extensive investigation as a viable alternative for commercial applications since the post-Moore ***,conventional perovskite-structure ferroelectrics(e.g.,PbZr_(x)Ti_(1-x)O_(3))encounter severe limitations for high-density integration owing to the size effect of ferroelectricity and incompatibility with complementary metal-oxide-semiconductor *** 2011,the ferroelectric field has been primarily focused on HfO_(2)-based ferroelectric thin films owing to their exceptional *** reviews discussing the control of ferroelectricity and device applications *** is believed that a comprehensive understanding of mechanisms based on industrial requirements and concerns is necessary,such as the wake-up effect and fatigue *** mechanisms reflect the atomic structures of the materials as well as the device ***,a review focusing on phase stability and domain structure is *** addition,the recent progress in related ferroelectric memory devices and their challenges is briefly discussed.
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