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Effect of helium concentration on irradiation damage of Fe-ion irradiated SIMP steel at 300℃and 450℃

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Chinese Physics B 2021年第5期30卷 81-86页

作者： Zhen Yang Junyuan Yang Qing liao Shuai Xu bingsheng li Sino-French Institute of Nuclear Engineering and Technology Sun Yat-sen UniversityZhuhai 519082China State Key Laboratory for Environment-Friendly Energy Materials Southwest University of Science and TechnologyMianyang 621010China

SIMP steel is newly developed fully martensitic steel for lead-cooled fast reactors and accelerator-driven *** is important to evaluate its radiation resistance via high flux neutron irradiation,where dense He atoms can be formed via(n,α)transmutation ***-irradiation with Fe and He ions,instead of neutron,was *** were irradiated with 6.4-MeV Fe ions to the damage dose of 5 dpa at a depth of 600 *** different helium injection ratios of 60-appm He/dpa(dpa:displacements per atom),200-appm He/dpa and 600-appm He/dpa at a depth of 600 nm,were *** different irradiation temperatures of 300℃and 450℃were carried *** effect of helium concentration on the microstructure of Fe-irradiated SIMP steel was *** damage was observed using transmission electron *** formed dislocation loops and bubbles depended on the helium injection ratio and irradiation *** of dislocation loops and helium bubbles were homogeneously distributed at 300℃,but not at 450℃.The causes of observed effects are discussed.

关键词： martensitic steels Fe and He co-irradiation microstructure transmission electron microscopy

Formation of nano-twinned 3C-SiC grains in Fe-implanted 6H-SiC after 1500-℃annealing

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Chinese Physics B 2021年第8期30卷 89-93页

作者： Zheng Han Xu Wang Jiao Wang Qing liao bingsheng li Nuclear Power Institute of China Chengdu 610200China Sichuan Vocational and Technical College of Communications Chengdu 611130China State Key Laboratory for Environment-friendly Energy Materials Southwest University of Science and TechnologyMianyang 621010China

A nano-twinned microstructure was found in amorphous SiC after high-temperature *** incidence x-ray diffraction,high-resolution transmission electron microscopy,and electron diffraction were performed to characterize the microstructure and phase transition in the recrystallization *** 1500℃or 2-h annealing,3C-SiC grains and numerous stacking faults on the{111}planes were *** 3C-SiC grains have nano-twinned structure with{011}*** the nano-twinned 3C-SiC grains,there is a stacking fault,indicating that the formation mechanisms of the nano-twinned structure are related to the disorder of Si *** increase in the twin thickness with increasing annealing temperature demonstrates that the nano-twinned structure can sink for lattice defects,in order to improve the radiation tolerance of SiC.

关键词： 6H-SiC ion implantation microstructure transmission electron microscopy recrystallization

Strong room-temperature emission from defect states in CVD-grown WSe2 nanosheets

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Nano Research 2018年第7期11卷 3922-3930页

作者： Shudong Zhao Lei Tao Peng Miao Xianjie Wang Zhiguo liu Yi Wang bingsheng li Yu Sui Yang wang Department of Physics Harbin Institute of Technology Harbin 150001 China School of Chemistry and Chemical Engineering Harbin Institute of Technology Harbin 150001 China Academy of Fundamental ond lnterdisciplinary Sciences Harbin Institute of Technology Harbin 150001 China

Monolayer transition metal dichalcogenides （TMDCs）, as direct bandgap semiconductors, show promise for applications in ultra-thin flexible optoelec- tronic devices. However, the optical properties and device performance are greatly affected by defects, such as vacancies, present in these materials. Vacancies exist unavoidably in mechanically exfoliated or grown by chemical vapor deposition （CVD） monolayer TMDCs; therefore, their influence on the electric and optical properties of host materials has been widely studied. Here, we report a new defect state located at 1.54 eV, which is 70 meV lower than the neutral exciton energy in as-prepared WSe2 monolayers grown by CVD. This defect state is clearly observed in photoluminescence （PL） and Raman spectra at ambient conditions. PL mapping, Rarnan mapping, and atomic force microscopy analysis indicate a solid-vapor reaction growth mechanism of the defect state formation. During a certain growth stage, nuclei with the composition of WOxSey do not fully react with the Se vapor, leading to the defect formation. This type of defects permits radiative recombination of bound neutral excitons, which can make the PL intensity as strong as the intrinsic excitation. Our findings reveal a new way to tailor the optical properties of two-dimensional TMDCs without any additional processes performed after growth.

关键词： monolayer WSe2 defects photoluminescence chemical vapordeposition (CVD) growth mechanism

Preparation and photodetection performance of high crystalline quality and large size β-Ga_(2)O_(3)microwires

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Journal of Semiconductors 2023年第6期44卷 75-79页

作者： Yuefei Wang Yurui Han Chong Gao bingsheng li Jiangang Ma Haiyang Xu Aidong Shen Yichun liu Key Laboratory of UV light Emitting Materials and Technology Ministry of EducationNortheast Normal UniversityChangchun 130024China Department of Electrical Engineering The City College of New YorkNew YorkNY 10031USA

Ultrawide band gap semiconductors are promising solar-blind ultraviolet(UV)photodetector materials due to their suitable bandgap,strong absorption and high ***,β-Ga_(2)O_(3)microwires with high crystal quality and large size were grown by the chemical vapor deposition(CVD)*** microwires reach up to 1 cm in length and were single crystalline with low defect *** to its high crystal quality,a metal–semiconductor–metal photodetector fabricated from a Ga_(2)O_(3)microwire showed a responsivity of 1.2 A/W at 240 nm with an ultrahigh UV/visible rejection ratio(R_(peak)/R_(400 nm))of 5.8×10^(5),indicating that the device has excellent spectral *** addition,no obvious persistent photoconductivity was observed in the *** rise and decay time constants of the device were 0.13 and 0.14 s,*** work not only provides a growth method for high-quality Ga_(2)O_(3)microwires,but also demonstrates the excellent performance of Ga_(2)O_(3)microwires in solar-blind ultraviolet detection.

关键词： solar-blind photodetector β-Ga_(2)O_(3) microwire

On the helium bubble swelling in nano-oxide dispersion-strengthened steels

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Journal of Materials Science & Technology 2022年第10期105卷 172-181页

作者： Vladimir Krsjak Tielong Shen Jarmila Degmova Stanislav Sojak Erik Korpas Pavol Noga Werner Egger bingsheng li Vladimir Slugen Frank A.Garner Slovak University of Technology Faculty of Electrical Engineering and Information TechnologyInstitute of Nuclear and Physical EngineeringIlkovicova 3Bratislava 81219Slovakia Chinese Academy of Sciences Institute of Modern PhysicsLanzhou 730000China Slovak University of Technology Faculty of Materials Science and TechnologyAdvanced Technologies Research InstituteJana Bottu 2781/25Trnava 91724Slovakia Universität der Bundeswehr München Institut für Angewandte Physik und Messtechnik LRT2Werner-Heisenberg-Weg 39Neubiberg85577Germany Southwest University of Science and Technology State Key Laboratory for Environment-friendly Energy MaterialsMianyangSichuan 621010China Texas A&M University Nuclear Engineering DepartmentCollege StationTX 77843USA Radiation Effects Consulting LLC Richland WA 99354USA

The development of structural materials resistant to harsh radiation environments requires an in-depth understanding of the early stage of the aging *** radiation environments with high transmutation helium production rates such as in fusion and spallation applications,even materials with otherwise acceptable radiation stability may suffer from radiation embrittlement related to helium bubble *** theoretical modeling of helium-assisted cavity nucleation in pure metals and simple alloys provides some useful guidelines at the atomic scale level,these,however,do not overlap with the size resolution of available experimental *** this study,we employed slow positron beam spectroscopy to characterize the nucleation and growth of nano-scale helium bubbles in martensitic steels strengthened by thermodynamically stable nano-oxide *** combination with transmission electron microscopy,we experimentally characterized the evolution of helium bubbles from small clusters of radiation-induced vacancies to large cavities well resolvable by *** radiation resistance of oxide-dispersion strengthened steels dominates only in the early stages of bubble evolution,where positron lifetime measurements provide a missing piece of the microstructural puzzle conventionally constructed by TEM.

关键词： Ion irradiation Bubble swelling Helium Positron annihilation spectroscopy Oxide dispersion strengthened steels

Suppression of persistent photoconductivity in high gain Ga_(2)O_(3) Schottky photodetectors

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Chinese Physics B 2021年第12期30卷 508-514页

作者： Haitao Zhou Lujia Cong Jiangang Ma bingsheng li Haiyang Xu Yichun liu Key Laboratory for UV-Emitting Materials and Technology of Ministry of Education Northeast Normal UniversityChangchun 130024China

The defect-related photoconductivity gain and persistent photoconductivity(PPC)observed in Ga_(2)O_(3)Schottky photodetectors lead to a contradiction between high responsivity and fast recovery *** this work,a metal-semiconductor-metal(MSM)Schottky photodetector,a unidirectional Schottky photodetector,and a photoconductor were constructed on Ga_(2)O_(3)*** MSM Schottky devices have high gain(>13)and high responsivity(>2.5 A/W)at 230-250 nm,as well as slow recovery speed caused by ***,applying a positive pulse voltage to the reverse-biased Ga_(2)O_(3)/Au Schottky junction can effectively suppress the PPC in the photodetector,while maintaining high *** mechanisms of gain and PPC do not strictly follow the interface trap trapping holes or the self-trapped holes models,which is attributed to the correlation with ionized oxygen vacancies in the Schottky *** positive pulse voltage modulates the width of the Schottky junction to help quickly neutralize electrons and ionized oxygen *** realization of suppression PPC functions and the establishment of physical models will facilitate the realization of high responsivity and fast response Schottky devices.

关键词： Ga_(2)O_(3)Schottky photodetector persistent photoconductivity high gain pulse voltage oxygen vacancy

Comparison of helium bubble formation in F82H, ODS, SIMP and T91 steels irradiated by Fe and He ions simultaneously

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Chinese Physics B 2021年第3期30卷 386-393页

作者： bingsheng li Zhen Yang Shuai Xu Kongfang Wei Zhiguang Wang Tielong Shen Tongmin Zhang Qing liao State Key Laboratory for Environment-Friendly Energy Materials Southwest University of Science and TechnologyMianyang 621010China Sino-French Institute of Nuclear Engineering and Technology Sun Yat-sen UniversityZhuhai 519082China Institute of Modern Physics Chinese Academy of SciencesLanzhou 730000China

Ferritic-martensitic steels and ODS steels are attractive candidates for structural materials in advanced nuclear-power systems due to their good swelling resistance. Four kinds of steels, F82 H, 15 Cr-ODS, SIMP and T91, are investigated in this study. We take 6.4 Me V Fe3+ ions and energy-degraded 1.0 Me V He+ ions in the irradiation of these materials to 5 dpa and 60 appm He/dpa, 200 appm He/dpa and 600 appm He/dpa at 300℃ and 450℃, respectively. The bubble formation and distribution are investigated by transmission electron microscopy(TEM). Formation and distribution of the bubbles in the four investigated steels are compared. The influence of irradiation temperature and helium injection ratio on bubble formation is discussed. It is found that there appears to be homogenously distributed bubbles at 300℃ irradiation while heterogeneously distributed bubbles at 450℃ irradiation.

关键词： martensitic steels Fe and He co-irradiation He bubbles transmission electron microscopy

Inhibition of liM kinase reduces contraction and proliferation in bladder smooth muscle

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Acta Pharmaceutica Sinica B 2021年第7期11卷 1914-1930页

作者： Qingfeng Yu Chengjie Wu Yeda Chen bingsheng li Ruixiao Wang Ru Huang Xuechun li Di Gu Xiaolong Wang Xiaolu Duan Shujue li Yang liu Wenqi Wu Martin Hennenberg Guohua Zeng Department of Urology and Guangdong Key Laboratory of Urology the First Affiliated Hospital of Guangzhou Medical UniversityGuangzhou 510230China Department of Urology University HospitalLMU MunichMunich 81377Germany

Overactive bladder(OAB)is the most bothersome symptom in lower urinary tract symptoms(LUTS).Current pharmacologic treatment aims to inhibit detrusor contraction;however,shows unsatisfied efficacy and high discontinuation *** kinases(liMKs)promote smooth muscle contraction in the prostate;however,their function in the bladder smooth muscle remains ***,we studied effects of the liMK inhibitors on bladder smooth muscle contraction and proliferation both in vitro and in vivo *** expressions of liMKs are elevated in OAB rat detrusor *** liMK inhibitors,SR7826 and liMKi3,inhibit contraction of human detrusor strip,and cause actin filament breakdown,as well as cell proliferation reduction in cultured human bladder smooth muscle cells(HBSMCs),paralleled by reduced cofilin *** of liMK1 and liMK2 in HBSMCs resulted in breakdown of actin filaments and decreased cell *** with SR7826 or liMKi3 decreased micturition frequency and bladder detrusor hypertrophy in rats with bladder outlet *** study suggests that liMKs may promote contraction and proliferation in the bladder smooth muscle,which could be inhibited by small molecule liMK *** inhibitors could be a potential therapeutic strategy for OAB-related LUTS.

关键词： liMK Cofilin phosphorylation Overactive bladder(OAB) Lower urinary tract symptoms(LUTS) Bladder smooth muscle contraction

Photoluminescence and Raman Spectroscopy Study on Color Centers of Helium Ion-Implanted 4H-SiC

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Nanomanufacturing and Metrology 2020年第3期3卷 205-217页

作者： Ying Song Zongwei Xu Rongrong li Hong Wang Yexin Fan Mathias Rommel Jiayu liu Georgy V.Astakhov Gregor Hlawacek bingsheng li Jun Xu Fengzhou Fang State Key Laboratory of Precision Measuring Technology and Instruments Centre of MicroNano Manufacturing TechnologyTianjin UniversityTianjin 300072China State Key Laboratory for Mesoscopic Physics and Electron Microscopy Laboratory School of PhysicsPeking UniversityBeijing 100871China State Key Laboratory of Separation Membranes and Membrane Processes Tianjin Polytechnic UniversityTianjin 300387China Fraunhofer Institute for Integrated Systems and Device Technology(IISB).Schottkystrasse 10.91058 Erlangen Germany Institute of Ion Beam Physics and Materials Research Helmholtz-Zentrum Dresden-Rossendorf(HZDR).Bautzner Landstrasse 400.01328 DresdenGermany State Key Laboratory for Environment-friendly Energy Materials Southwest University of Science and TechnologyMianyang 621010SichuanChina

Color centers in silicon carbide(SiC)are promising candidates for quantum ***,the richness of the polytype and defect configuration of SiC makes the accurate control of the types and position of defects in SiC still *** this study,helium ion-implanted 4H-SiC was characterized by atomic force microscopy(AFM),confocal photoluminescence(PL),and confocal Raman spectroscopy at room *** signals of silicon vacancy were found and analyzed using 638-nm and 785-nm laser excitation by means of depth profiling and SWIFT *** defects(C-C bond)were detected by continuous laser excitation at 532 nm and 638 nm,***/Raman depth profiling was helpful in revealing the three-dimensional distribution of produced *** in the depth profiling results and SRIM simulation results were explained by considering the depth resolution of the confocal measurement setup,helium bubbles,as well as swelling.

关键词： Helium ion implantation Silicon carbide(SiC) Color center Point defect Silicon vacancy Confocal photoluminescence spectroscopy Raman spectroscopy Atomic force microscopy(AFM)