Suppression of persistent photoconductivity in high gain Ga_(2)O_(3) Schottky photodetectors
Suppression of persistent photoconductivity in high gain Ga2O3 Schottky photodetectors作者机构：Key Laboratory for UV-Emitting Materials and Technology of Ministry of EducationNortheast Normal UniversityChangchun 130024China
出 版 物：《Chinese Physics B》 (中国物理B（英文版）)
年 卷 期：2021年第30卷第12期
页 面：508-514页
核心收录：
基 金：Project supported by the National Natural Science Foundation of China(Grant Nos.51872043,51732003,and 51902049) the National Key R&D Program of China(Grant No.2019YFA0705202) Natural Science Foundation of Jilin Province,China(Grant No.20200201076JC) the National Basic Research Program of China(Grant No.2012CB933703) “111”Project(Grant No.B13013)
主 题：Ga_(2)O_(3)Schottky photodetector persistent photoconductivity high gain pulse voltage oxygen vacancy
摘 要：The defect-related photoconductivity gain and persistent photoconductivity(PPC)observed in Ga_(2)O_(3)Schottky photodetectors lead to a contradiction between high responsivity and fast recovery *** this work,a metal-semiconductor-metal(MSM)Schottky photodetector,a unidirectional Schottky photodetector,and a photoconductor were constructed on Ga_(2)O_(3)*** MSM Schottky devices have high gain(13)and high responsivity(2.5 A/W)at 230-250 nm,as well as slow recovery speed caused by ***,applying a positive pulse voltage to the reverse-biased Ga_(2)O_(3)/Au Schottky junction can effectively suppress the PPC in the photodetector,while maintaining high *** mechanisms of gain and PPC do not strictly follow the interface trap trapping holes or the self-trapped holes models,which is attributed to the correlation with ionized oxygen vacancies in the Schottky *** positive pulse voltage modulates the width of the Schottky junction to help quickly neutralize electrons and ionized oxygen *** realization of suppression PPC functions and the establishment of physical models will facilitate the realization of high responsivity and fast response Schottky devices.
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