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Interfacial molecular screening of polyimide dielectric towards high-performance organic field-effect transistors

Chinese Chemical Letters 2024年第2期35卷 268-271页

作者： Yingshuang Zheng Huchao Li Ting Jiang Fei Jiao Jie Li Yong Lei Guofeng Tian jinshun bi Yundong Xuan Liqiang Li Deyang Ji Wenping Hu Department of Chemistry Tianjin Key Laboratory of Molecular Optoelectronic SciencesInstitute of Molecular Aggregation ScienceTianjin UniversityTianjin 300072China GPL Photonics Laboratory State Key Laboratory of Applied OpticsChangchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of SciencesChangchun 130033China Haihe Laboratory of Sustainable Chemical Transformations Tianjin 300192China Department of Chemistry Tianjin Key Laboratory of Molecular Optoelectronic SciencesSchool of ScienceCollaborative Innovation Center of Chemical Science and EngineeringTianjin UniversityTianjin 300072China Joint School of National University of Singapore and Tianjin University Fuzhou 350207China Fachgebiet Angewandte Nanophysik Institut für Physik & IMN MacroNanoTechnische Universität IlmenauIlmenau 98693Germany State Key Laboratory of Chemical Resource Engineering Beijing University of Chemical TechnologyBeijing 100029China Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100101China

The compatibility of the gate dielectrics with semiconductors is vital for constructing efficient conducting channel for high charge ***,it is still a highly challenging mission to clearly clarify the relationship between the dielectric layers and the chemical structure of semiconductors,especially vacuum-deposited small ***,interfacial molecular screening of polyimide(Kapton)dielectric in organic field-effect transistors(OFETs)is comprehensively *** is found that the semiconducting small molecules with alkyl side chains prefer to form a high-quality charge transport layer on polyimide(PI)dielectrics compared with the molecules without alkyl side *** this basis,the fabricated transistors could reach the mobility of 1.2 cm^(2) V^(−1)s^(−1) the molecule with alkyl side chains on bare PI *** is more,the compatible semiconductor and dielectric would further produce a low activation energy(E_(A))of 3.01 meV towards efficient charge transport even at low temperature(e.g.,100 K,0.9 cm^(2) V^(−1)s^(−1)).Our research provides a guiding scheme for the construction of high-performance thin-film field-effect transistors based on PI dielectric layer at room and low temperatures.

关键词： Interfacial molecular screening Polyimide dielectrics Organic semiconductors Interface engineering Thin-film transistors

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Modulating p-type doping of two-dimensional material palladium diselenide

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Nano Research 2024年第4期17卷 3232-3244页

作者： Jiali Yang Yu Liu En-Yang Wang Jinbo Pang Shirong Huang Thomas Gemming jinshun bi Alicja Bachmatiuk Hao Jia Shu-Xian Hu Chongyun Jiang Hong Liu Gianaurelio Cuniberti Weijia Zhou Mark H Rümmeli Institute for Advanced Interdisciplinary Research(iAIR) University of JinanJinan 250022China Institute for Materials Chemistry Leibniz Institute for Solid State and Materials Research Dresden(IFW Dresden)20 Helmholtz StrasseDresden 01069Germany State Key Lab of Transducer Technology Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China College of Energy Soochow Institute for Energy and Materials Innovations Soochow UniversitySuzhou 215006China Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province Soochow UniversitySuzhou 215006China School of Integrated Circuits University of Chinese Academy of SciencesBeijing 101408China Institute of Microelectronics of Tianjin binhai New Area Tianjin 300451China Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China Lukasiewicz Research Network PORT Polish Center for Technology DevelopmentStablowicka 147Wroclaw 54-066Poland School of Mathematics and Physics University of Science and Technology BeijingBeijing 100083China College of electronic information and optical engineering Nankai UniversityTianjin 300350China Centre of Polymer and Carbon Materials Polish Academy of SciencesM.Curie Sklodowskiej 34Zabrze 41-819Poland Center for Energy and Environmental Technologies VŠB-Technical University of Ostrava17.Listopadu 15Ostrava 70833Czech Republic State Key Laboratory of Crystal Materials Center of Bio&Micro/Nano Functional MaterialsShandong UniversityJinan 250100China Dresden Center for Computational Materials Science Technische Universität DresdenDresden 01062Germany Dresden Center for Intelligent Materials(GCL DCIM) Technische Universität DresdenDresden 01062Germany Institute for Materials Science and Max Bergmann Center of biomaterials Technische Universität DresdenDresden 01069Germany Center for Advancing Electronics Dresden Technische Universität DresdenDresden 01069Germany

The van der Waals heterostructures have evolved as novel materials for complementing the Si-based semiconductor ***-10 noble metal dichalcogenides(e.g.,PtS_(2),PtSe_(2),PdS_(2),and PdSe_(2))have been listed into two-dimensional(2D)materials toolkit to assemble van der Waals *** them,PdSe_(2) demonstrates advantages of high stability in air,high mobility,and wide tunable ***,the regulation of p-type doping of PdSe_(2) remains unsolved problem prior to fabricating p–n junction as a fundamental platform of semiconductor ***,a quantitative method for the controllable doping of PdSe_(2) is yet to be *** this study,the doping level of PdSe_(2) was correlated with the concentration of Lewis acids,for example,SnCl_(4),used for *** the transfer characteristics,the threshold voltage(the gate voltage corresponding to the minimum drain current)increased after SnCl_(4) soaking ***_(2) transistors were soaked in SnCl_(4) solutions with five different *** threshold voltages from the as-obtained transfer curves were extracted for linear fitting to the threshold voltage versus doping concentration correlation *** study provides in-depth insights into the controllable p-type doping of PdSe_(2).It may also push forward the research of the regulation of conductivity behaviors of 2D materials.

关键词： two-dimensional(2D)materials Lewis acid treatment p-type doping field-effect transistors transfer characteristic

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面向空间应用的GaN功率器件及其辐射效应

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国防科技大学学报 2024年第1期46卷 149-159页

作者：毕津顺沈立志梅博曹爽孙毅于庆奎中国科学院大学集成电路学院北京100049 中国科学院微电子研究所北京100029 中国航天宇航元器件工程中心北京100029

研究氮化镓(GaN)功率器件及其辐射效应对于解决空间应用需求、促进新一代航天器建设具有重大意义。介绍了GaN功率器件的主要结构及工作原理,综述了近年来国内外在GaN功率器件的总剂量效应和单粒子效应两方面的研究进展,并对辐射效应在Ga... 详细信息

研究氮化镓(GaN)功率器件及其辐射效应对于解决空间应用需求、促进新一代航天器建设具有重大意义。介绍了GaN功率器件的主要结构及工作原理,综述了近年来国内外在GaN功率器件的总剂量效应和单粒子效应两方面的研究进展,并对辐射效应在GaN功率器件中造成的退化和损伤机制进行分析与讨论。研究结果显示:GaN功率器件具有较强的抗总剂量能力,但是抗单粒子能力较弱,易发生漏电和单粒子烧毁,且烧毁点多发生在栅极边缘的漏侧。对GaN功率器件辐照损伤机理的研究缺乏权威理论,有待进一步探索,为其空间应用提供理论支撑。目前,平面结构的GaN功率器件是主流的技术方案,单片集成及高频小型化是GaN功率器件未来发展的方向。

关键词： GaN功率器件总剂量效应单粒子效应空间应用

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Total ionizing dose effects and annealing behaviors of HfO2-based MOS capacitor

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Science China(Information Sciences) 2017年第12期60卷 111-113页

作者： Yannan XU jinshun bi Gaobo XU Kai XI Bo LI Ming LIU Institute of Microelectronics Chinese Academy of Sciences University of Chinese Academy of Sciences

With the continuously scaling down of semiconductor technology,the traditional SiOas gate dielectric is approaching the physical and electrical *** problems,such as the increasing leakage current and reliability issues,seriously affect the transistor performance[1].HfOhas been considered to be one of the reasonable alternative solutions due to a suitable dielectric constant(about 25),the relatively large band gap(5.68 e V)

关键词： Figure Co MOS Si

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Total ionizing dose effects on graphene-based charge-trapping memory

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Science China(Information Sciences) 2019年第12期62卷 207-214页

作者： Kai XI jinshun bi SANDip MAJUMDAR Bo LI Jing LIU Yannan XU Ming LIU Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences School of Microelectronics University of Chinese Academy of Sciences

This study investigates the total ionizing dose effects in graphene-based charge-trapping memory(GCTM) capacitors by using60 Co γ-irradiation. Electrical properties including C-V hysteresis window,gate leakage current, and flat band voltage shifts are evaluated with ionizing dose levels up to 1 Mrad(Si).The C-V hysteresis memory window is hardly affected by the irradiation. The gate leakage current increases with the increase of ionizing dose due to the multiple-trap assisted tunneling mechanism. Significant electrical degrade of the devices in programmed and erased states has been observed with the increase of the dose levels. Mechanisms behind the degradation are attributed to the photo-emission in the graphene nanodisc charge-trapping sets, radiation-induced holes trapping in the peripheral oxides, and the recombination of the stored electrons with the radiation-induced holes.

关键词： graphene non-volatile memories radiation trap-assisted tunneling leakage current

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Total ionizing dose effects on aluminum oxide/zirconium-doped hafnium oxide stack ferroelectric tunneling junctions

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Science China(Information Sciences) 2022年第6期65卷 279-280页

作者： Xueqin YANG Yannan XU jinshun bi Kai XI Linjie FAN Lanlong JI Gaobo XU Institute of Microelectronics Chinese Academy of Sciences University of Chinese Academy of Sciences

Dear editor,Ferroelectric random access memory(FeR AM) technologies based on hafnium oxide(HfO) are promising candidates for future non-volatile memory applications due to their scalability and complementary metal-oxide semiconductor(CMOS) compatibility [1]. Among them, HfO-based ferroelectric tunneling junction(FTJ) has been attracting greater attention for many emerging applications than Fe-cap and FeF ET due to its non-destructive readout,

关键词： HfO2 ferroelectric tunneling junctions dielectric total ionizing dose γ rays radiation

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Influence of back-gate stress on the back-gate threshold voltage of a LOCOS-isolated SOI MOSFET

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Journal of Semiconductors 2012年第2期33卷 36-40页

作者： Mei Bo bi jinshun Li Duoli Liu Sinan Han Zhengsheng Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China

The performance of a LOCOS-isolated SOI MOSFET heavily depends on its back-gate characteristic, which can be affected by back-gate stress.A large voltage stress was applied to the back gate of SOI devices for at least 30 s at room temperature,which could effectively modify the back-gate threshold voltage of these devices. This modification is stable and time *** order to improve the back-gate threshold voltage,positive substrate bias was applied to NMOS devices and negative substrate bias was applied to PMOS *** results suggest that there is a leakage path between source and drain along the silicon island edge,and the application of large backgate bias with the source,drain and gate grounded can strongly affect this leakage *** we draw the conclusion that the back-gate threshold voltage,which is directly related to the leakage current,can be influenced by back-gate stress.

关键词： back-gate threshold voltage stress silicon-on-insulator

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环境温度对HfO_(2)铁电存储器的质子辐照效应影响研究

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微电子学 2024年第2期54卷 330-337页

作者：朱旭昊袁亦辉黄铭敏马瑶毕津顺许高博龚敏杨治美李芸四川大学物理学院微电子技术四川省重点实验室成都610064 四川大学辐射物理及技术教育部重点实验室成都610064 贵州师范大学集成电路研究院贵州550025 中国科学院微电子研究所集成电路制造技术国家重点实验室北京100029

基于HfO_(2)的铁电随机存取存储器(FeRAM)具有功耗低、存取速度快,易于小型化,抗干扰能力强等优势,在航天航空领域有广袤的发展空间。然而,FeRAM在太空环境下的抗辐照性能尚未得到全面的研究。研究了W/TiN/Hf_(0.5)Zr_(0.5)O_(2)(HZO)/... 详细信息

基于HfO_(2)的铁电随机存取存储器(FeRAM)具有功耗低、存取速度快,易于小型化,抗干扰能力强等优势,在航天航空领域有广袤的发展空间。然而,FeRAM在太空环境下的抗辐照性能尚未得到全面的研究。研究了W/TiN/Hf_(0.5)Zr_(0.5)O_(2)(HZO)/TiN铁电存储器在常温和高温环境下经5 MeV质子辐照后的电学特性和铁电畴结构变化。通过电学和压电响应力显微镜(PFM)手段表征发现,在常温质子辐照后,电容器的介电常数(ε_(r))和剩余极化强度(P_(r))值均增大,器件的铁电性能提升,常温高注量质子辐照有利于存储器在太空环境中工作,但随着辐照时环境温度升高,HZO存储器的铁电性能下降,漏电流增大,铁电存储器的各项性能明显退化。

关键词： HfO_(2) 铁电存储器质子辐照温度

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A novel SOI-DTMOS structure from circuit performance considerations

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Journal of Semiconductors 2009年第2期30卷 34-38页

作者：宋文斌毕津顺韩郑生 Institute of Microelectronics Chinese Academy of Sciences

The performance of a partially depleted silicon-on-insulator （PDSO1） dynamic threshold MOSFET （DT- MOS） is degraded by the large body capacitance and body resistance. Increasing silicon film thickness can reduce the body resistance greatly, but the body capacitance also increases significantly at the same time. To solve this problem, a novel SOl DTMOSFET structure （drain/source-on-local-insulator structure） is proposed. From ISE simulation, the improvement in delay, obtained by optimizing p-n junction depth and silicon film thickness, is very significant. At the same time, we find that the drive current increases significantly as the thickness of the silicon film increases. Furthermore, only one additional mask is needed to form the local SIMOX, and other fabrication processes are fully compatible with conventional CMOS/SOI technology.

关键词： partially depleted silicon-on-insulator dynamic threshold MOSFET body capacitance body resistance silicon film thickness circuit delay

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Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors

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Science China(Information Sciences) 2020年第12期63卷 278-280页

作者： Guoliang TIAN jinshun bi Gaobo XU Kai XI Xueqin YANG Majumdar SANDIP Huaxiang YIN Qiuxia XU Wenwu WANG Institute of Microelectronics Chinese Academy of Sciences School of Microelectronics University of Chinese Academy of Sciences Department of Physics ICFAI School of Science ICFAI University Tripura

Dear editor,Ferroelectric tunneling FETs (FeTFETs) are the increasingly significant research topics on novel low-power electronic devices [1, 2], because ferroelectric materials’ negative capacitance effect is helpfu... 详细信息

关键词： SOI double-gate FeTFET single-event-transient heavy ion numerical simulation vertical tunneling

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