Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors

作     者：Guoliang TIAN Jinshun BI Gaobo XU Kai XI Xueqin YANG Majumdar SANDIP Huaxiang YIN Qiuxia XU Wenwu WANG Guoliang TIAN;Jinshun BI;Gaobo XU;Kai XI;Xueqin YANG;Majumdar SANDIP;Huaxiang YIN;Qiuxia XU;Wenwu WANG

作者机构：Institute of Microelectronics Chinese Academy of Sciences School of Microelectronics University of Chinese Academy of Sciences Department of Physics ICFAI School of Science ICFAI University Tripura 

出 版 物：《Science China(Information Sciences)》 (中国科学:信息科学(英文版))

年 卷 期：2020年第63卷第12期

页      面：278-280页

核心收录：

学科分类：0808[工学-电气工程] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0812[工学-计算机科学与技术（可授工学、理学学位）] 

基　　金：supported in part by National Natural Science Foundation of China (Grant Nos. 2019B010145001  616340084  61821091  61888102) 

主　　题：SOI double-gate FeTFET single-event-transient heavy ion numerical simulation vertical tunneling 

摘      要：Dear editor,Ferroelectric tunneling FETs (FeTFETs) are the increasingly significant research topics on novel low-power electronic devices [1, 2], because ferroelectric materials’ negative capacitance effect is helpful to boost the channel potential and increase the on-state current in TFETs.