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Unveiling strain-enhanced moiréexciton localization in twisted van der Waals homostructures

Nano Research 2024年第4期17卷 3245-3252页

作者： Henry Rui He Haihong Zheng Biao Wu Shaofei Li Junnan Ding Zongwen Liu Jian-Tao Wang anlian pan Yanping Liu Institute of Quantum Physics School of PhysicsCentral South UniversityChangsha 410083China State Key Laboratory of Precision Manufacturing for Extreme Service Performance Central South UniversityChangsha 410083China School of Chemical and Biomolecular Engineering The University of SydneyNSW 2006Australia Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China College of Materials Science and Engineering Hunan UniversityChangsha 410082China State Key Laboratory of High-Performance Complex Manufacturing Central South UniversityChangsha 410083China Shenzhen Research Institute of Central South University Shenzhen 51800China

Moirésuperlattices,arising from the controlled twisting of van der Waals homostructures at specific angles,have emerged as a promising platform for quantum emission applications.Concurrently,the manipulation of strain provides a versatile strategy to finely adjust electronic band structures,enhance exciton luminescence efficiency,and establish a robust foundation for two-dimensional quantum light sources.However,the intricate interplay between strain and moirépotential remains partially unexplored.Here,we introduce a meticulously designed fusion of strain engineering and the twisted 2L-WSe_(2)/2L-WSe_(2) homobilayers,resulting in the precise localization of moiréexcitons.Employing low-temperature photoluminescence spectroscopy,we unveil the emergence of highly localized moiré-enhanced emission,characterized by the presence of multiple distinct emission lines.Furthermore,our investigation demonstrates the effective regulation of moirépotential depths through strain engineering,with the potential depths of strained and unstrained regions differing by 91%.By combining both experimental and theoretical approaches,our study elucidates the complex relationship between strain and moirépotential,thereby opening avenues for generating strain-induced moiréexciton single-photon sources.

关键词： moirésuperlattices strain engineering moiréexcitons moirépotential

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Competitive assembling strategy to construct carbon nitride homojunctions for boosting photocatalytic performance

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Journal of Materials Science & Technology 2024年第5期172卷 23-32页

作者： Hua-Wei Zhang Yuan-Yuan Li Bo Li Jing-Hui Shi Tao Huang Gui-Fang Huang anlian pan Wangyu Hu Wei-Qing Huang School of Physics&Electronic Engineering Zhengzhou University of Light IndustryZhengzhou 450002China Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education&Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices School of Physics and ElectronicsHunan UniversityChangsha 410082China College of Materials Science and Engineering Hunan UniversityChangsha 410082China

Both morphology and composition have a great influence on the properties and functions of materials,however,how to rational modulate both of them to achieve their synergistic effects has been a longstanding expectation.Herein,we demonstrate a competitive assembling strategy for the construction of metal-free graphite carbon nitride(CN)homojunctions in which morphology and composition can be easily controlled simultaneously by only changing the ratio of assembly raw materials.These homojunctions are comprised of porous nanotubular S-doped CN(SCN)grafted with CN nanovesicles,which are derived from thermal polycondensation of melamine-thiocyanuric acid(M-T)/melamine-cyanuric acid(M-C)supramolecular hybrid blocks.This unique architecture and component engineering endows the novel SCN-CN homojunction with abundant active sites,enhanced visible trapping ability,and intimate interface contact.As a result,the synthesized SCN-CN homojunctions demonstrate high photocatalytic activity for hydrogen evolution and pollutant degradation.This developed strategy opens up intriguing opportu-nities for the rational construction of intricate metal-free heterostructures with controllable architecture and interfacial contact for applications in energy-related fields.

关键词： Competitive assembling strategy Supramolecular hybrid blocks Homojunctions Graphite carbon nitride Photocatalytic

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Controlled growth of vertically stacked In_(2)Se_(3)/WSe_(2) heterostructures for ultrahigh responsivity photodetector

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Nano Research 2024年第3期17卷 1856-1863页

作者： Cheng Zhang Biyuan Zheng Guangcheng Wu Xueying Liu Jiaxin Wu Chengdong Yao Yizhe Wang Zilan Tang Ying Chen Lizhen Fang Luying Huang Dong Li Shengman Li anlian pan Key Laboratory for Micro-Nano Physics and Technology of Hunan Province State Key Laboratory of Chemo/Biosensing and ChemometricsCollege of Materials Science and EngineeringHunan UniversityChangsha 410082China

Transition metal dichalcogenides(TMDCs)are promising candidates for future optoelectronic devices accounting for their high carrier mobility and excellent quantum efficiency.However,the limited light absorption efficiency in atomically thin layers significantly hinders photocarrier generation,thereby impairing the optoelectronic performance and hindering practical applications.Herein,we successfully synthesized In_(2)Se_(3)/WSe_(2) heterostructures through a typical two-step chemical vapor deposition(CVD)method.The In_(2)Se_(3) nanosheet with strong light absorption capability,serving as the light absorption layer,was integrated with the monolayer WSe_(2),enhancing the photosensitivity of WSe_(2) significantly.Upon laser irradiation with a wavelength of 520 nm,the In_(2)Se_(3)/WSe_(2) heterostructure device shows an ultrahigh photoresponsivity with a value as high as 2333.5 A/W and a remarkable detectivity reaching up to 6.7×10^(12) Jones,which is the highest among almost the reported TMDCs-based heterostructures grown via CVD even some fabricated by mechanical exfoliation(ME).Combing the advantages of CVD method such as large scale,high yield,and clean interface,the In_(2)Se_(3)/WSe_(2) heterostructures would provide a novel path for future high-performance optoelectronic device.

关键词： transition metal dichalcogenides(TMDCs) In_(2)Se_(3) heterostructure photodetector ultrahigh responsivity

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Layer-by-layer epitaxy growth of thickness-controllable two-dimensional tungsten disulfide

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Science China(Information Sciences) 2024年第5期67卷 302-310页

作者： Jieyuan LIANG Zixing ZOU Junwu LIANG Di WANG Biao WANG Anshi CHU Jiali YI Cheng ZHANG Lizhen FANG Tian ZHANG Huawei LIU Xiaoli ZHU Dong LI anlian pan Key Laboratory for Micro-Nano Physics and Technology of Hunan Province State Key Laboratory of Chemo/Biosensing and Chemometrics Hunan Institute of Optoelectronic IntegrationCollege of Materials Science and Engineering School of Physics and ElectronicsHunan University School of Electronic Information and Electrical Engineering Changsha University School of Physics and Telecommunication Engineering Yulin Normal University Units Semiconductor Technology Co. Ltd. School of Physics and Electronics Hunan Normal University

Bilayer transition metal dichalcogenides（TMDs） balance the high mobility of single layers with the high state density of multilayers and therefore have promising application prospects in high-performance electronics. However, the layer-controlled growth of 2D materials is still confronted with challenges such as poor repeatability between different labs and a limited understanding of the growth mechanism at the atomic scale. Herein, we report a new carbon-assisted chemical vapor deposition process that can realize the growth of WS2sheets with high yield, precise thickness controllability, and repeatability. We show that carbon can act as a reducing agent and catalyst that preferentially reacts with the WO3precursor to form intermediate WO3-xproducts with low-valence state W. The resulting oxycarbide gas has a low surface adsorption energy when deposited on the surface of as-grown WS2, which provides nucleation sites for the subsequent layer of WS2growth and leads to the vertical growth of WS2sheets. The growth mechanism is thoroughly investigated. Electrical transport measurements show that the produced bilayer WS2possesses a high carrier mobility(up to 58 cm2·V-1·s-1) and small subthreshold swing（estimated to be 148 mV/decade）,which are among the best reported results for TMDs produced using CVD.

关键词： WS$_2$ thickness-controlled growth chemical vapor deposition additive carbon

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Perovskite sensitized 2D photodiodes

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Light(Science & Applications) 2023年第6期12卷 951-952页

作者： Dong Li anlian pan Key Laboratory for Micro-Nano Physics and Technology of Hunan Province State Key Laboratory of Chemo/Biosensing and ChemometricsHunan Institute of Optoelectronic IntegrationCollege of Materials Science and EngineeringHunan UniversityChangshaChina

A new type of perovskite sensitized programmable WSe_(2) photodiode is constructed based on MAPbI_(3)/WSe_(2) heterojunction,presenting flexible reconfigurable characteristics and prominent optoelectronic performances.

关键词： heterojunction optoelectronic reconfigurable

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Two-dimensional optoelectronic devices for silicon photonic integration

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Journal of Materiomics 2023年第3期9卷 551-567页

作者： Zilan Tang Shula Chen Dong Li Xiaoxia Wang anlian pan Key Laboratory for Micro-Nano Physics and Technology of Hunan Province State Key Laboratory of Chemo/Biosensing and ChemometricsHunan Institute of Optoelectronic IntegrationCollege of Materials Science and EngineeringHunan UniversityChangshaHunan410082China

With the unprecedented increasing demand for extremely fast processing speed and huge data capacity,traditional silicon-based information technology is becoming saturated due to the encountered bottle-necks of Moore's Law.New material systems and new device architectures are considered promising strategies for this challenge.Two-dimensional(2D)materials are layered materials and garnered persistent attention in recent years owing to their advantages in ultrathin body,strong light-matter interaction,flexible integration,and ultrabroad operation wavelength range.To this end,the integra-tion of 2D materials into silicon-based platforms opens a new path for silicon photonic integration.In this work,a comprehensive review is given of the recent signs of progress related to 2D material inte-grated optoelectronic devices and their potential applications in silicon photonics.Firstly,the basic op-tical properties of 2D materials and heterostructures are summarized in the first part.Then,the state-of-the-art three typical 2D optoelectronic devices for silicon photonic applications are reviewed in detail.Finally,the perspective and challenges for the aim of 3D monolithic heterogeneous integration of these 2D optoelectronic devices are discussed.

关键词： Two-dimensional materials Silicon photonics Heterogeneous integration Optoelectronic devices

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Metasurface-enabled on-chip multiplexed diffractive neural networks in the visible

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Light(Science & Applications) 2022年第7期11卷 1443-1453页

作者： Xuhao Luo Yueqiang Hu Xiangnian Ou Xin Li Jiajie Lai Na Liu Xinbin Cheng anlian pan Huigao Duan National Research Center for High-Efficiency Grinding College of Mechanical and Vehicle EngineeringHunan UniversityChangsha 410082China Institute of Precision Optical Engineering School of Physics Science and EngineeringTongji UniversityShanghai 200092China Advanced Manufacturing Laboratory of Micro-Nano Optical Devices Shenzhen Research InstituteHunan UniversityShenzhen 518000China 2nd Physics Institute University of StuttgartPfaffenwaldring 5770569 StuttgartGermany Max Planck Institute for Solid State Research Heisenbergstrasse 170569 StuttgartGermany Greater Bay Area Institute for Innovation Hunan UniversityGuangzhou 511300China

Replacing electrons with photons is a compelling route toward high-speed,massively parallel,and low-power artificial intelligence computing.Recently,diffractive networks composed of phase surfaces were trained to perform machine learning tasks through linear optical transformations.However,the existing architectures often comprise bulky components and,most critically,they cannot mimic the human brain for multitasking.Here,we demonstrate a multi-skilled diffractive neural network based on a metasurface device,which can perform on-chip multi-channel sensing and multitasking in the visible.The polarization multiplexing scheme of the subwavelength nanostructures is applied to construct a multi-channel classifier framework for simultaneous recognition of digital and fashionable items.The areal density of the artificial neurons can reach up to 6.25×10^(6)mm^(-2) multiplied by the number of channels.The metasurface is integrated with the mature complementary metal-oxide semiconductor imaging sensor,providing a chip-scale architecture to process information directly at physical layers for energy-efficient and ultra-fast image processing in machine vision,autonomous driving,and precision medicine.

关键词： visible autonomous complementary

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Vapor growth of V‑doped MoS_(2)monolayers with enhanced B‑exciton emission and broad spectral response

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Frontiers of Optoelectronics 2023年第4期16卷 109-120页

作者： Biyuan Zheng Xingxia Sun Weihao Zheng Chenguang Zhu Chao Ma anlian pan Dong Li Shengman Li Key Laboratory for Micro-Nano Physics and Technology of Hunan Province State Key Laboratory of Chemo/Biosensing and ChemometricsHunan Institute of Optoelectronic IntegrationCollege of Materials Science and EngineeringHunan UniversityChangsha 410082China College of Advanced Interdisciplinary Studies and Hunan Provincial Key Laboratory of Novel Nano Optoelectronic Information Materials and Devices National University of Defense TechnologyChangsha 410073China Wuhan National Laboratory for Optoelectronics(WNLO) Huazhong University of Science and Technology(HUST)Wuhan 430074China

Dynamically engineering the optical and electrical properties in two-dimensional(2D)materials is of great signifcance for designing the related functions and applications.The introduction of foreign-atoms has previously been proven to be a feasible way to tune the band structure and related properties of 3D materials;however,this approach still remains to be explored in 2D materials.Here,we systematically demonstrate the growth of vanadium-doped molybdenum disulfde(V-doped MoS_(2))monolayers via an alkali metal-assisted chemical vapor deposition method.Scanning transmission electron microscopy demonstrated that V atoms substituted the Mo atoms and became uniformly distributed in the MoS_(2)monolayers.This was also confrmed by Raman and X-ray photoelectron spectroscopy.Power-dependent photoluminescence spectra clearly revealed the enhanced B-exciton emission characteristics in the V-doped MoS_(2)monolayers(with low doping concentration).Most importantly,through temperature-dependent study,we observed efcient valley scattering of the B-exciton,greatly enhancing its emission intensity.Carrier transport experiments indicated that typical p-type conduction gradually arisen and was enhanced with increasing V composition in the V-doped MoS_(2),where a clear n-type behavior transited frst to ambipolar and then to lightly p-type charge carrier transport.In addition,visible to infrared wide-band photodetectors based on V-doped MoS_(2)monolayers(with low doping concentration)were demonstrated.The V-doped MoS_(2)monolayers with distinct B-exciton emission,enhanced p-type conduction and broad spectral response can provide new platforms for probing new physics and ofer novel materials for optoelectronic applications.

关键词： Atomic substitution.V-doped MoS_(2) Distinct B-exciton Broad spectral response

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Evidence for moiréintralayer excitons in twisted WSe_(2)/WSe_(2) homobi layer superlattices

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Light(Science & Applications) 2022年第7期11卷 1493-1500页

作者： Biao Wu Haihong Zheng Shaofei Li Junnan Ding Jun He Yujia Zeng Keqiu Chen Zongwen Liu Shula Chen anlian pan Yanping Liu School of Physics and Electronics Hunan Key Laboratory for Super-microstructure and Ultrafast ProcessCentral South University932 South Lushan RoadChangshaHunan 410083China State Key Laboratory of High-Performance Complex Manufacturing Central South University932 South Lushan RoadChangshaHunan 410083China Department of Applied Physics School of Physics and ElectronicsHunan UniversityChangsha 410082China School of Chemical and Biomolecular Engineering The University of SydneySydneyNSW 2006Australia The University of Sydney Nano Institute The University of SydneySydneyNSW 2006Australia Hunan Institute of Optoelectronic Integration College of Materials Science and EngineeringHunan UniversityChangshaHunan 410082China Shenzhen Research Institute of Central South University A510aVirtual University BuildingSouthern DistrictHigh-tech Industrial ParkYuehai StreetNanshan DistrictShenzhenChina

Recent advances in twisted van der Waals heterostructure superlattices have emerged as a powerful and attractive platform for exploring novel condensed matter physics due to the interplay between the moirépotential and Coulomb interactions.The moirésuperlattices act as a periodic confinement potential in space to capture interlayer excitons(IXs),resulting in moiréexciton arrays,which provide opportunities for quantum emitters and many-body physics.The observation of moiréIXs in twisted transition-metal dichalcogenide(TMD)heterostructures has recently been widely reported.However,the capture and study of the moiréintralayer excitons based on TMD twisted homobilayer(T-HB)remain elusive.Here,we report the observation of moiréintralayer excitons in a WSe_(2)/WSe_(2) T-HB with a small twist angle by measuring PL spectrum.The multiple split peaks with an energy range of 1.55-1.73 eV are different from that of the monolayer WSe_(2) exciton peaks.The split peaks were caused by the trapping of intralayer excitons via the moirépotential.The confinement effect of the moirépotential on the moiréintralayer excitons was further demonstrated by the changing of temperature,laser power,and valley polarization.Our findings provide a new avenue for exploring new correlated quantum phenomena and their applications.

关键词： twisted layer quantum

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Controlled Growth of Two-Dimensional Heterostructures:In-Plane Epitaxy or Vertical Stack

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Accounts of Materials Research 2022年第10期3卷 999-1010页

作者： Jieyuan Liang Xiaoli Zhu Mingxing Chen Xidong Duan Dong Li anlian pan Hunan Institute of Optoelectronic Integration and Key Laboratory for MicroNano Physics and Technology of Hunan Province School of Physics and ElectronicsHunan UniversityChangsha 410082P.R.China Hunan Institute of Optoelectronic Integration and Key Laboratory for MicroNano Physics and Technology of Hunan Province State Key Laboratory of Chemo/Biosensing and ChemometricsCollege of Materials Science and EngineeringHunan UniversityChangsha 410082P.R.China Key Laboratory for Matter Microstructure and Function of Hunan Province Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of EducationSchool of Physics and ElectronicsHunan Normal University410081 ChangshaPeople’s Republic of China Hunan Key Laboratory of Two-Dimensional Materials State Key Laboratory for Chemo/Biosensing and ChemometricsCollege of Chemistry and Chemical Engineeringthe College of Chemistry and Chemical EngineeringHunan UniversityChangsha 410082P.R.China

CONSPECTUS:Two-dimensional(2D)heterostructures have created many novel properties and triggered a variety of promising applications,thus setting off a boom in the modern semiconductor industry.As the first road to step into adequately exploring the properties and real applications,the material preparation process matters a lot.Adhering to the concept of epitaxial growth,chemical vapor deposition(CVD)shows great potential for the preparation of heterostructures for commercialization.

关键词： Epitaxy heterostructure Vertical

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