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Nano Research 2024年第8期17卷 7603-7613页

作者： Weiqi Sun Li Xiang Zebang Luo Hui Wang Dong Li anlian pan College of Materials Science and Engineering Hunan UniversityChangsha 410082China

Stretchable electronics have found widespread applications in various fields such as wearable electronics,soft robots,and *** an important promising alternative of traditional rigid conductors,liquid metals have demonstrated immense potential to provide high conductivity and stretchability for the stretchable electronic ***,limited by their fluidity and high surface tension,challenges remain in achieving liquid metal patterns with low-cost,high-precision,large-scale,and complex ***,a fabrication technique was proposed based on laser-induced graphene(LIG)stamps to enable liquid metal self-selectively adhere to *** metal patterns could thus be achieved in different designed geometries and could be transferred onto stretchable *** liquid metal patterns exhibit exceptional electrical conductivity(3.24×10^(6)S/m even under 1000%strain),high stretchability(1000%strain,maximum of 2500%),small resistance changes under significant deformations(with a quality factor of 62.5 under 1000%strain),and high resolution(down to 50μm).Utilizing the patterned liquid metals,a stretchable integrated multifunctional optoelectronic system was demonstrated,encompassing a stretchable display matrix,a pressure sensor array,a wireless powering coil,and cardiovascular sensors,which further highlight the remarkable application potential of liquid metals in optoelectronic user-interaction and advanced physiological monitoring.

关键词： liquid metal wettability selective adhesion transfer printing stretchable electronics

Unveiling strain-enhanced moiréexciton localization in twisted van der Waals homostructures

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Nano Research 2024年第4期17卷 3245-3252页

作者： Henry Rui He Haihong Zheng Biao Wu Shaofei Li Junnan Ding Zongwen Liu Jian-Tao Wang anlian pan Yanping Liu Institute of Quantum Physics School of PhysicsCentral South UniversityChangsha 410083China State Key Laboratory of Precision Manufacturing for Extreme Service Performance Central South UniversityChangsha 410083China School of Chemical and Biomolecular Engineering The University of SydneyNSW 2006Australia Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China College of Materials Science and Engineering Hunan UniversityChangsha 410082China State Key Laboratory of High-Performance Complex Manufacturing Central South UniversityChangsha 410083China Shenzhen Research Institute of Central South University Shenzhen 51800China

Moirésuperlattices,arising from the controlled twisting of van der Waals homostructures at specific angles,have emerged as a promising platform for quantum emission ***,the manipulation of strain provides a versatile strategy to finely adjust electronic band structures,enhance exciton luminescence efficiency,and establish a robust foundation for two-dimensional quantum light ***,the intricate interplay between strain and moirépotential remains partially ***,we introduce a meticulously designed fusion of strain engineering and the twisted 2L-WSe_(2)/2L-WSe_(2) homobilayers,resulting in the precise localization of moiré*** low-temperature photoluminescence spectroscopy,we unveil the emergence of highly localized moiré-enhanced emission,characterized by the presence of multiple distinct emission ***,our investigation demonstrates the effective regulation of moirépotential depths through strain engineering,with the potential depths of strained and unstrained regions differing by 91%.By combining both experimental and theoretical approaches,our study elucidates the complex relationship between strain and moirépotential,thereby opening avenues for generating strain-induced moiréexciton single-photon sources.

关键词： moirésuperlattices strain engineering moiréexcitons moirépotential

Competitive assembling strategy to construct carbon nitride homojunctions for boosting photocatalytic performance

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Journal of Materials Science & Technology 2024年第5期172卷 23-32页

作者： Hua-Wei Zhang Yuan-Yuan Li Bo Li Jing-Hui Shi Tao Huang Gui-Fang Huang anlian pan Wangyu Hu Wei-Qing Huang School of Physics&Electronic Engineering Zhengzhou University of Light IndustryZhengzhou 450002China Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education&Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices School of Physics and ElectronicsHunan UniversityChangsha 410082China College of Materials Science and Engineering Hunan UniversityChangsha 410082China

Both morphology and composition have a great influence on the properties and functions of materials,however,how to rational modulate both of them to achieve their synergistic effects has been a longstanding ***,we demonstrate a competitive assembling strategy for the construction of metal-free graphite carbon nitride(CN)homojunctions in which morphology and composition can be easily controlled simultaneously by only changing the ratio of assembly raw *** homojunctions are comprised of porous nanotubular S-doped CN(SCN)grafted with CN nanovesicles,which are derived from thermal polycondensation of melamine-thiocyanuric acid(M-T)/melamine-cyanuric acid(M-C)supramolecular hybrid *** unique architecture and component engineering endows the novel SCN-CN homojunction with abundant active sites,enhanced visible trapping ability,and intimate interface *** a result,the synthesized SCN-CN homojunctions demonstrate high photocatalytic activity for hydrogen evolution and pollutant *** developed strategy opens up intriguing opportu-nities for the rational construction of intricate metal-free heterostructures with controllable architecture and interfacial contact for applications in energy-related fields.

关键词： Competitive assembling strategy Supramolecular hybrid blocks Homojunctions Graphite carbon nitride Photocatalytic

Controlled growth of vertically stacked In_(2)Se_(3)/WSe_(2) heterostructures for ultrahigh responsivity photodetector

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Nano Research 2024年第3期17卷 1856-1863页

作者： Cheng Zhang Biyuan Zheng Guangcheng Wu Xueying Liu Jiaxin Wu Chengdong Yao Yizhe Wang Zilan Tang Ying Chen Lizhen Fang Luying Huang Dong Li Shengman Li anlian pan Key Laboratory for Micro-Nano Physics and Technology of Hunan Province State Key Laboratory of Chemo/Biosensing and ChemometricsCollege of Materials Science and EngineeringHunan UniversityChangsha 410082China

Transition metal dichalcogenides(TMDCs)are promising candidates for future optoelectronic devices accounting for their high carrier mobility and excellent quantum ***,the limited light absorption efficiency in atomically thin layers significantly hinders photocarrier generation,thereby impairing the optoelectronic performance and hindering practical ***,we successfully synthesized In_(2)Se_(3)/WSe_(2) heterostructures through a typical two-step chemical vapor deposition(CVD)*** In_(2)Se_(3) nanosheet with strong light absorption capability,serving as the light absorption layer,was integrated with the monolayer WSe_(2),enhancing the photosensitivity of WSe_(2) *** laser irradiation with a wavelength of 520 nm,the In_(2)Se_(3)/WSe_(2) heterostructure device shows an ultrahigh photoresponsivity with a value as high as 2333.5 A/W and a remarkable detectivity reaching up to 6.7×10^(12) Jones,which is the highest among almost the reported TMDCs-based heterostructures grown via CVD even some fabricated by mechanical exfoliation(ME).Combing the advantages of CVD method such as large scale,high yield,and clean interface,the In_(2)Se_(3)/WSe_(2) heterostructures would provide a novel path for future high-performance optoelectronic device.

关键词： transition metal dichalcogenides(TMDCs) In_(2)Se_(3) heterostructure photodetector ultrahigh responsivity

Layer-by-layer epitaxy growth of thickness-controllable two-dimensional tungsten disulfide

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Science China(Information Sciences) 2024年第5期67卷 302-310页

作者： Jieyuan LIANG Zixing ZOU Junwu LIANG Di WANG Biao WANG Anshi CHU Jiali YI Cheng ZHANG Lizhen FANG Tian ZHANG Huawei LIU Xiaoli ZHU Dong LI anlian pan Key Laboratory for Micro-Nano Physics and Technology of Hunan Province State Key Laboratory of Chemo/Biosensing and Chemometrics Hunan Institute of Optoelectronic IntegrationCollege of Materials Science and Engineering School of Physics and ElectronicsHunan University School of Electronic Information and Electrical Engineering Changsha University School of Physics and Telecommunication Engineering Yulin Normal University Units Semiconductor Technology Co. Ltd. School of Physics and Electronics Hunan Normal University

Bilayer transition metal dichalcogenides（TMDs） balance the high mobility of single layers with the high state density of multilayers and therefore have promising application prospects in high-performance electronics. However, the layer-controlled growth of 2D materials is still confronted with challenges such as poor repeatability between different labs and a limited understanding of the growth mechanism at the atomic scale. Herein, we report a new carbon-assisted chemical vapor deposition process that can realize the growth of WS2sheets with high yield, precise thickness controllability, and repeatability. We show that carbon can act as a reducing agent and catalyst that preferentially reacts with the WO3precursor to form intermediate WO3-xproducts with low-valence state W. The resulting oxycarbide gas has a low surface adsorption energy when deposited on the surface of as-grown WS2, which provides nucleation sites for the subsequent layer of WS2growth and leads to the vertical growth of WS2sheets. The growth mechanism is thoroughly investigated. Electrical transport measurements show that the produced bilayer WS2possesses a high carrier mobility(up to 58 cm2·V-1·s-1) and small subthreshold swing（estimated to be 148 mV/decade）,which are among the best reported results for TMDs produced using CVD.

关键词： WS$_2$ thickness-controlled growth chemical vapor deposition additive carbon

模拟高放废液硼硅酸盐玻璃固化体钼分相与化学稳定性的结构基因模拟

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硅酸盐学报 2024年第6期52卷 2068-2080页

作者：戴晨李洪张丽艳胡丽丽朱小莉潘安练湖南大学材料科学与工程学院长沙410082中国中国科学院上海光学精密机械研究所高功率激光单元技术实验室上海201800中国日本电气硝子株式会社(NEG)美国分公司北卡罗来纳28150美国

碱金属钼酸盐黄相在高放废液玻璃固化过程中难以处理,严重影响玻璃的化学稳定性。为了对高钼废液固化玻璃的化学稳定性进行较为准确的预判,从而加速配方研发进程,利用玻璃结构基因模拟法(GSg M)研究了高Mo (2.6%~3.3%,质量分数)模拟高... 详细信息

碱金属钼酸盐黄相在高放废液玻璃固化过程中难以处理,严重影响玻璃的化学稳定性。为了对高钼废液固化玻璃的化学稳定性进行较为准确的预判,从而加速配方研发进程,利用玻璃结构基因模拟法(GSg M)研究了高Mo (2.6%~3.3%,质量分数)模拟高放废液硼硅酸盐玻璃的化稳性和钼分相累积情况,建立了B、Li、Na、Mo浸出率、玻璃转变温度和钼分相累积程度的结构预测模型,并进行了模型验证。研究显示,在本工作的成分研究范围内,钼分相成分主要为CsLiMoO_(4)(水溶性黄相)及CaMoO_(4)(耐水性晶相)。成分–结构–性质关系表明,提高Li_(2)O和CaO会显著促进钼分相的形成。518~528 cm^(-1)Si—O—Si振动增强,则钼分相加剧,但[BO_(3)]基团中B—O—B振动增强,可有效减少钼分相的析出。模型验证结果表明,各性质的结构预测模型可对设计玻璃的化稳性及钼分相累积程度进行快速预测,以筛选设计玻璃配方是否有进一步研究的必要。

关键词：高放废液硼硅酸盐玻璃固化钼分相浸出率结构基因模拟

Microscopic growth mechanism and edge states of monolayer 1T'-MoTe2

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Chinese Physics B 2024年第4期33卷 474-480页

作者：赵海鹏刘隐杨胜国林陈昉陈明星 Kai Braun 罗心仪李思宇潘安练王笑 Key Laboratory for Micro-Nano Physics and Technology of Hunan Province School of Physics and ElectronicsCollege of Materials Science and Engineering Hunan University Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education Synergetic Innovation Centre for Quantum Effects and Applications (SICQEA) Hunan Normal University State Key Laboratory of Powder Metallurgy Central South University Institute of Physical and Theoretical Chemistry and LISA+ University of Tübingen

Transition metal ditellurides（TMTDs） have versatile physical properties,including non-trivial topology,Weyl semimetal states and unique spin *** growth of high-quality and large-scale monolayer TMTDs with preferred crystal phases is crucial for their ***,we demonstrate the epitaxial growth of 1T'-MoTe2on Au（111）and graphitized silicon carbide（Gr/SiC） by molecular beam epitaxy（MBE）.We investigate the morphology of the grown1T'-MoTe2at the atomic level by scanning tunnelling microscopy（STM） and reveal the corresponding microscopic growth *** is found that the unique ordered Te structures preferentially deposited on Au（111） regulate the growth of monolayer single crystal 1T'-MoTe2,while the Mo clusters were preferentially deposited on the Gr/SiC substrate,which impedes the ordered growth of monolayer *** confirm that the size of single crystal 1T'-MoTe2grown on Au（111）is nearly two orders of magnitude larger than that on Gr/*** scanning tunnelling spectroscopy（STS）,we observe that the STS spectrum of the monolayer 1T'-MoTe2nano-island at the edge is different from that at the interior,which exhibits enhanced conductivity.

关键词： 1T′-MoTe2 microscopic growth mechanism scanning tunneling microscopy/spectroscopy (STM/S) transition metal ditellurides

Two-dimensional optoelectronic devices for silicon photonic integration

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Journal of Materiomics 2023年第3期9卷 551-567页

作者： Zilan Tang Shula Chen Dong Li Xiaoxia Wang anlian pan Key Laboratory for Micro-Nano Physics and Technology of Hunan Province State Key Laboratory of Chemo/Biosensing and ChemometricsHunan Institute of Optoelectronic IntegrationCollege of Materials Science and EngineeringHunan UniversityChangshaHunan410082China

With the unprecedented increasing demand for extremely fast processing speed and huge data capacity,traditional silicon-based information technology is becoming saturated due to the encountered bottle-necks of Moore's *** material systems and new device architectures are considered promising strategies for this ***-dimensional(2D)materials are layered materials and garnered persistent attention in recent years owing to their advantages in ultrathin body,strong light-matter interaction,flexible integration,and ultrabroad operation wavelength *** this end,the integra-tion of 2D materials into silicon-based platforms opens a new path for silicon photonic *** this work,a comprehensive review is given of the recent signs of progress related to 2D material inte-grated optoelectronic devices and their potential applications in silicon ***,the basic op-tical properties of 2D materials and heterostructures are summarized in the first ***,the state-of-the-art three typical 2D optoelectronic devices for silicon photonic applications are reviewed in ***,the perspective and challenges for the aim of 3D monolithic heterogeneous integration of these 2D optoelectronic devices are discussed.

关键词： Two-dimensional materials Silicon photonics Heterogeneous integration Optoelectronic devices

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微型发光二极管全彩色显示研究进展(特邀)

激光与光电子学进展 2024年第1期61卷 420-429页

作者：黄丽香韩冰闫龙赵项杰朱酉良林肖李梓维潘安练湖南大学材料科学与工程学院湖南光电集成创新研究院湖南长沙410082 诺视科技(苏州)有限公司江苏苏州215011

基于发光二极管的显示技术在电视、电脑、手机等终端产品上获得了广泛应用。与传统液晶显示器和有机发光二极管屏幕相比,微型发光二极管(Micro-LED)显示器件在尺寸、性能、功耗、使用寿命等方面均具有显著优势。总结了Micro-LED全彩色... 详细信息

基于发光二极管的显示技术在电视、电脑、手机等终端产品上获得了广泛应用。与传统液晶显示器和有机发光二极管屏幕相比,微型发光二极管(Micro-LED)显示器件在尺寸、性能、功耗、使用寿命等方面均具有显著优势。总结了Micro-LED全彩色显示的技术类别和产品应用场景,综述了实现Micro-LED全彩色显示的最新研究进展,包括巨量转移技术、色转换层集成技术和外延芯片单片集成技术,并进一步比较分析这些技术的优缺点,展望了Micro-LED全彩色显示技术的未来发展。

关键词：发光二极管显示技术单片集成巨量转移氮化镓

Microscopic growth mechanism and edge states of monolayer 1T'-MoTe_(2)

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Chinese Physics B 2024年第4期33卷 605-611页

作者：赵海鹏刘隐杨胜国林陈昉陈明星 Kai Braun 罗心仪李思宇潘安练王笑 Key Laboratory for Micro-Nano Physics and Technology of Hunan Province School of Physics and ElectronicsCollege of Materials Science and EngineeringHunan UniversityChangsha 410082China Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education Synergetic Innovation Centre for Quantum Effects and Applications (SICQEA) Hunan Normal UniversityChangsha 410081China State Key Laboratory of Powder Metallurgy Central South UniversityChangsha 410083China Institute of Physical and Theoretical Chemistry and LISA+ University of TubingenAuf der Morgenstelle 1872076 TubingenGermany

Transition metal ditellurides(TMTDs)have versatile physical properties,including non-trivial topology,Weyl semimetal states and unique spin *** growth of high-quality and large-scale monolayer TMTDs with preferred crystal phases is crucial for their ***,we demonstrate the epitaxial growth of 1T'-MoTe_(2) on Au(111)and graphitized silicon carbide(Gr/SiC)by molecular beam epitaxy(MBE).We investigate the morphology of the grown1T'-MoTe_(2) at the atomic level by scanning tunnelling microscopy(STM)and reveal the corresponding microscopic growth *** is found that the unique ordered Te structures preferentially deposited on Au(111)regulate the growth of monolayer single crystal 1T'-MoTe_(2),while the Mo clusters were preferentially deposited on the Gr/SiC substrate,which impedes the ordered growth of monolayer MoTe_(2).We confirm that the size of single crystal 1T'-MoTe_(2) grown on Au(111)is nearly two orders of magnitude larger than that on Gr/*** scanning tunnelling spectroscopy(STS),we observe that the STS spectrum of the monolayer 1T'-MoTe_(2) nano-island at the edge is different from that at the interior,which exhibits enhanced conductivity.

关键词： transition metal ditellurides 1T'-MoTe_(2) microscopic growth mechanism scanning tunneling microscopy/spectroscopy(STM/S)