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检索条件"作者=Amit Chaudhry"
158 条 记 录,以下是1-10 订阅
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Interconnects for nanoscale MOSFET technology:a review
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Journal of Semiconductors 2013年 第6期34卷 157-164页
作者: amit chaudhry UIET Panjab University
In this paper,a review of Cu/low-k,carbon nanotube(CNT),graphene nanoribbon(GNR)and optical based interconnect technologies has been done,Interconnect models,challenges and solutions have also been discussed.Of al... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Mathematical modeling of nanoscale MOS capacitance in the presence of depletion and energy quantization in a poly-silicon gate
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Journal of Semiconductors 2010年 第11期31卷 5-8页
作者: amit chaudhry J.N.Roy Institute of Engineering and Technology Panjab University Solar Semiconductor Pvt.Ltd.
A model has been developed to study the effect of depletion and energy quantization at the poly-silicon /oxide interface on the behavior of a nanometer scale n-MOSFET.A model of inversion charge density,including the ... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Nanoscale strained-Si MOSFET physics and modeling approaches:a review
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Journal of Semiconductors 2010年 第10期31卷 19-23页
作者: amit chaudhry J.N.Roy Garima Joshi University Institute of Engineering and Technology Panjab University Solar Semiconductor Private Limited
An attempt has been made to give a detailed review of strained silicon technology. Various device models have been studied that consider the effect of strain on the devices, and comparisons have been drawn. A review o... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
SPICE compatible analytical electron mobility model for biaxial strained-Si-MOSFETs
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Journal of Semiconductors 2011年 第5期32卷 36-41页
作者: amit chaudhry J.N.Roy S.Sangwan UIET Panjab UniversityChandigarhIndia Solar Semiconductro Pvt.Ltd HyderabadIndia
This paper describes an analytical model for bulk electron mobility in strained-Si layers as a function of strain. Phonon scattering, columbic scattering and surface roughness scattering are included to analyze the fu... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Comparative Study of Energy Quantization Approaches in Nanoscale MOSFETs
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Journal of Electronic Science and Technology 2011年 第1期9卷 51-57页
作者: amit chaudhry Jatindra Nath Roy University Institute of Engineering and Technology Panjab University Solar Semiconductor Pvt. Ltd.
An analytical model has been developed to study inversion layer quantization in the ultra thin oxide MOS (metal oxide semiconductor) structures using variation and triangular well approaches.Accurate modeling of the... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Analytical Modeling of Source-to-Drain Tunneling in Nanoscale Silicon MOSFET
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Journal of Electronic Science and Technology 2010年 第4期8卷 346-350页
作者: amit chaudhry Jatinder Nath Roy University Institute of Engineering and Technology Panjab University Solar Semiconductor Private Limited
Sub-10-nm bulk n-MOSFET (metal-oxide -semiconductor field effect transistor) direct source-to- drain tunneling current density using Wentzel- Krammers-Brillouin 0NKB) transmission tunneling theory has been simulate... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
MOSFET栅氧泄漏隧穿电流的分析模型:量子力学研究(英文)
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微纳电子技术 2011年 第6期48卷 357-364页
作者: amit chaudhry Jatindra Nath Roy 旁遮普大学工程与技术学院 印度昌迪加尔91160014 Solar Semiconductor有限公司 印度海得拉巴501359
研发了一种通过MOSFET的超薄栅氧化物分析直接隧穿电流密度的模型。采用Wentzel-Kramers-Brilliouin(WKB)近似计算了隧穿概率,利用清晰的表面势方程改进模型的准确性。在研究模型中考虑了Si衬底中反型层的量子化和多晶硅栅耗尽,还研究... 详细信息
来源: 维普期刊数据库 维普期刊数据库 博看期刊 同方期刊数据库 同方期刊数据库 评论
Analytical Modeling of Quantum Mechanical Tunneling in Germanium Nano-MOSFETS
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Journal of Electronic Science and Technology 2010年 第2期8卷 144-148页
作者: amit chaudhry J. N. Roy University Institute of Engineering and Technology Panjab University Solar Semiconductor Private Limited
A simple analytical model has been developed to study quantum mechanical effects (QME) in a germanium substrate MOSFET (metal oxide semiconductor field effect transistor), which includes gate oxide tunneling consi... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Combinative approach of transzonular triamcinolonemoxifloxacin and perioperative drops to minimize postoperative complications of cataract surgery
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International Journal of Ophthalmology(English edition) 2024年 第5期17卷 845-851页
作者: Behnam Rabiee Muhamad Festok Michael Gaspari Abid Haseeb Aaila chaudhry Layla Kamoun Imtiaz chaudhry Iftikhar chaudhry Department of Ophthalmology Trinity Health Mid-AtlanticNazareth HospitalPhiladelphiaPA 19020USA IC Laser Eye Care BensalemPA 19020USA
AIM: To investigate the effectiveness of combinationtherapy with transzonular triamcinolone-moxifloxacin andconventional perioperative drops in reducing postoperativecomplications of cataract surgery. METHODS: Electro... 详细信息
来源: 维普期刊数据库 维普期刊数据库 评论
Predicting short-term thromboembolic risk following Roux-en-Y gastric bypass using supervised machine learning
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World Journal of Gastrointestinal Surgery 2024年 第4期16卷 1097-1108页
作者: Hassam Ali Faisal Inayat Vishali Moond Ahtshamullah chaudhry Arslan Afzal Zauraiz Anjum Hamza Tahir Muhammad Sajeel Anwar Dushyant Singh Dahiya Muhammad Sohaib Afzal Gul Nawaz Amir H Sohail Muhammad Aziz Department of Gastroenterology East Carolina University Brody School of MedicineGreenvilleNC 27834United States Department of Internal Medicine Allama Iqbal Medical CollegeLahorePunjab 54550Pakistan Department of Internal Medicine Saint Peter's University Hospital and Robert Wood Johnson Medical SchoolNew BrunswickNJ 08901United States Department of Internal Medicine St.Dominic's HospitalJacksonMS 39216United States Department of Internal Medicine Rochester General HospitalRochesterNY 14621United States Department of Internal Medicine Jefferson Einstein HospitalPhiladelphiaPA 19141United States Department of Internal Medicine UHS Wilson Medical CenterJohnsonNY 13790United States Division of Gastroenterology Hepatology and MotilityThe University of Kansas School of MedicineKansasKS 66160United States Department of Internal Medicine Louisiana State University HealthShreveportLA 71103United States Department of Surgery University of New Mexico School of MedicineAlbuquerqueNM 87106United States Department of Gastroenterology and Hepatology The University of ToledoToledoOH 43606United States
BACKGROUND Roux-en-Y gastric bypass(RYGB)is a widely recognized bariatric procedure that is particularly beneficial for patients with class III obesity.It aids in significant weight loss and improves obesity-related m... 详细信息
来源: 维普期刊数据库 维普期刊数据库 评论