Interconnects for nanoscale MOSFET technology:a review

作     者：Amit Chaudhry 

作者机构：UIETPanjab University 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2013年第34卷第6期

页      面：157-164页

核心收录：

学科分类：0808[工学-电气工程] 07[理学] 0809[工学-电子科学与技术（可授工学、理学学位）] 070205[理学-凝聚态物理] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学] 

主　　题：Cu/low-k 3D integration electromigration CNTs graphene interconnects comparisons 

摘      要：In this paper,a review of Cu/low-k,carbon nanotube（CNT）,graphene nanoribbon（GNR）and optical based interconnect technologies has been done,Interconnect models,challenges and solutions have also been discussed.Of all the four technologies,CNT interconnects satisfy most of the challenges and they are most suited for nanometer scale technologies,despite some minor drawbacks.It is concluded that beyond 32nm technology,a paradigm shift in the interconnect material is required as Cu/low-k interconnects are approaching fundamental limits.