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Modulating p-type doping of two-dimensional material palladium diselenide

Nano Research 2024年第4期17卷 3232-3244页

作者： Jiali Yang Yu Liu En-Yang Wang Jinbo Pang Shirong Huang Thomas Gemming Jinshun Bi alicja bachmatiuk Hao Jia Shu-Xian Hu Chongyun Jiang Hong Liu Gianaurelio Cuniberti Weijia Zhou Mark H Rümmeli Institute for Advanced Interdisciplinary Research(iAIR) University of JinanJinan 250022China Institute for Materials Chemistry Leibniz Institute for Solid State and Materials Research Dresden(IFW Dresden)20 Helmholtz StrasseDresden 01069Germany State Key Lab of Transducer Technology Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China College of Energy Soochow Institute for Energy and Materials Innovations Soochow UniversitySuzhou 215006China Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province Soochow UniversitySuzhou 215006China School of Integrated Circuits University of Chinese Academy of SciencesBeijing 101408China Institute of Microelectronics of Tianjin Binhai New Area Tianjin 300451China Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China Lukasiewicz Research Network PORT Polish Center for Technology DevelopmentStablowicka 147Wroclaw 54-066Poland School of Mathematics and Physics University of Science and Technology BeijingBeijing 100083China College of electronic information and optical engineering Nankai UniversityTianjin 300350China Centre of Polymer and Carbon Materials Polish Academy of SciencesM.Curie Sklodowskiej 34Zabrze 41-819Poland Center for Energy and Environmental Technologies VŠB-Technical University of Ostrava17.Listopadu 15Ostrava 70833Czech Republic State Key Laboratory of Crystal Materials Center of Bio&Micro/Nano Functional MaterialsShandong UniversityJinan 250100China Dresden Center for Computational Materials Science Technische Universität DresdenDresden 01062Germany Dresden Center for Intelligent Materials(GCL DCIM) Technische Universität DresdenDresden 01062Germany Institute for Materials Science and Max Bergmann Center of Biomaterials Technische Universität DresdenDresden 01069Germany Center for Advancing Electronics Dresden Technische Universität DresdenDresden 01069Germany

The van der Waals heterostructures have evolved as novel materials for complementing the Si-based semiconductor ***-10 noble metal dichalcogenides(e.g.,PtS_(2),PtSe_(2),PdS_(2),and PdSe_(2))have been listed into two-dimensional(2D)materials toolkit to assemble van der Waals *** them,PdSe_(2) demonstrates advantages of high stability in air,high mobility,and wide tunable ***,the regulation of p-type doping of PdSe_(2) remains unsolved problem prior to fabricating p–n junction as a fundamental platform of semiconductor ***,a quantitative method for the controllable doping of PdSe_(2) is yet to be *** this study,the doping level of PdSe_(2) was correlated with the concentration of Lewis acids,for example,SnCl_(4),used for *** the transfer characteristics,the threshold voltage(the gate voltage corresponding to the minimum drain current)increased after SnCl_(4) soaking ***_(2) transistors were soaked in SnCl_(4) solutions with five different *** threshold voltages from the as-obtained transfer curves were extracted for linear fitting to the threshold voltage versus doping concentration correlation *** study provides in-depth insights into the controllable p-type doping of PdSe_(2).It may also push forward the research of the regulation of conductivity behaviors of 2D materials.

关键词： two-dimensional(2D)materials Lewis acid treatment p-type doping field-effect transistors transfer characteristic

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Applications of Carbon Nanotubes in the Internet of Things Era

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Nano-Micro Letters 2021年第12期13卷 14-28页

作者： Jinbo Pang alicja bachmatiuk Feng Yang Hong Liu Weijia Zhou Mark HRümmeli Gianaurelio Cuniberti Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy Institute for Advanced Interdisciplinary Research(iAIR)Universities of ShandongUniversity of JinanShandongJinan 250022People’s Republic of China PORT Polish Center for Technology Development Łukasiewicz Research NetworkUl.Stabłowicka 14754‑066 WrocławPoland Centre of Polymer and Carbon Materials Polish Academy of SciencesM.Curie‐Sklodowskiej 3441‑819 ZabrzePoland Department of Chemistry Southern University of Science and TechnologyShenzhen 518055People’s Republic of China State Key Laboratory of Crystal Materials Center of Bio&Micro/Nano Functional MaterialsShandong University27 Shandanan RoadJinan 250100People’s Republic of China College of Energy Institute for Energy and Materials InnovationsSoochow UniversitySuzhouSoochow 215006People’s Republic of China Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province Soochow UniversitySuzhou 215006People’s Republic of China Centre of Polymer and Carbon Materials Polish Academy of SciencesM.Curie Sklodowskiej 3441‑819 ZabrzePoland Institute for Complex Materials Leibniz Institute for Solid State and Materials Research Dresden(IFW Dresden)20 Helmholtz Strasse01069 DresdenGermany Institute of Environmental Technology VŠB-Technical University of Ostrava17.Listopadu 15Ostrava 70833Czech Republic Institute for Materials Science and Max Bergmann Center of Biomaterials Center for Advancing Electronics DresdenTechnische Universitat Dresden01069 DresdenGermany Dresden Center for Computational Materials Science Dresden Center for Intelligent Materials(GCL DCIM)Technische Universität Dresden01062 DresdenGermany

The post-Moore's era has boosted the progress in carbon nanotube-based ***,the 5 G communication and cloud computing stimulate the research in applications of carbon nanotubes in electronic *** this perspective,we deliver the readers with the latest trends in carbon nanotube research,including high-frequency transistors,biomedical sensors and actuators,brain–machine interfaces,and flexible logic devices and energy *** opportunities are given for calling on scientists and engineers into the emerging topics.

关键词： Carbon nanotubes Transistors Sensors Actuators Brain–machine interfaces Energy storage

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Graphene transfer methods: A review

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Nano Research 2021年第11期14卷 3756-3772页

作者： Sami Ullah Xiaoqin Yang Huy Q.Ta Maria Hasan alicja bachmatiuk Klaudia Tokarska Barbara Trzebicka Lei Fu Mark H.Rummeli College of Energy Soochow Institute for Energy and Materials InnovationsKey Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu ProvinceSoochow UniversitySuzhou215006China School of Energy and Power Engineering Xi’an Jiaotong UniversityXi’an710049China Institute for Complex Materials IFW Dresden20 Helmholtz StrasseDresden01069Germany NUTECH School of Applied Sciences&Humanities and Computer Engineering DepartmentNational University of TechnologyIslamabad42000Pakistan Centre of Polymer and Carbon Materials Polish Academy of SciencesM.Curie-Sklodowskiej 34Zabrze41-819Poland College of Chemistry and Molecular Science Wuhan UniversityWuhan430072China Institute of Environmental Technology VŠB-Technical University of Ostrava17.listopadu 15Ostrava70833Czech Republic

Graphene is a material with unique properties that can be exploited in electronics, catalysis, energy, and bio-related fields. Although, for maximal utilization of this material, high-quality graphene is required at both the growth process and after transfer of the graphene film to the application-compatible substrate. Chemical vapor deposition (CVD) is an important method for growing high-quality graphene on non-technological substrates (as, metal substrates, e.g., copper foil). Thus, there are also considerable efforts toward the efficient and non-damaging transfer of quality of graphene on to technologically relevant materials and systems. In this review article, a range of graphene current transfer techniques are reviewed from the standpoint of their impact on contamination control and structural integrity preservation of the as-produced graphene. In addition, their scalability, cost- and time-effectiveness are discussed. We summarize with a perspective on the transfer challenges, alternative options and future developments toward graphene technology.

关键词： high-quality transfer application-compatible substrate graphene technology

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Shedding Light on the Crystallographic Etching of Multi-Layer Graphene at the Atomic Scale

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Nano Research 2009年第9期2卷 695-705页

作者： Franziska Schäffel Jamie H.Warner alicja bachmatiuk Bernd Rellinghaus Bernd Büchner Ludwig Schultz Mark H.Rümmeli IFW Dresden P.O.Box 270116D-01171 DresdenGermany Department of Materials University of OxfordParks Rd.Oxford OX13PHUnited Kingdom

The controlled etching of graphite and graphene by catalytic hydrogenation is potentially a key engineering route for the fabrication of graphene nanoribbons with atomic *** hydrogenation mechanism,though,remains poorly *** this study we exploit the benefi ts of aberration-corrected high-resolution transmission electron microscopy to gain insight to the hydrogenation *** etch tracks are found to be commensurate with the graphite *** particles at the head of an etch channel are shown to be faceted and the angles between facets are multiples of 30°.Thus,the angles between facets are also commensurate with the graphite *** addition,the results of a post-annealing step suggest that all catalyst particles even if they are not involved in etching are actively forming methane during the hydrogenation ***,the data point against carbon dissolution being a key mechanism during the hydrogenation process.

关键词： Graphene graphene nanoribbons catalytic hydrogenation nanoparticles

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Size and time dependent internalization of label-free nano-graphene oxide in human macrophages

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Nano Research 2017年第6期10卷 1980-1995页

作者： Rafael G. Mendes Angelo Mandarino Britta Koch Anne K. Meyer alicja bachmatiuk Cordula Hirsch Thomas Gemming Oliver G. Schmidt Zhongfan Liu Mark H. Rummeli College of Physics Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University Suzhou 215006 China IFW Dresden Institute for Solid State and Materials Research P.O. Box D-01171 Dresden Germany Centre of Polymer and Carbon Materials Polish Academy of Sciences M. Curie-Sklodowskiej 34 Zabrze 41-819 Poland EMPA - Swiss Federal Laboratories for Materials Science and Technology Lerchenfeldstrasse 5 9014 St. Gallen Switzerland Material Systems for Nanoelectronics Chemnitz University of Technology Reichenhainer Sir. 70 09107 Chemnitz Germany ing National Laboratory for Molecular Sciences College of Chemistry and Molecular Engineering Peking University Beijing 100871 China

Graphene oxide shows great promise as a material for biomedical applications, e.g., as a multi-drug delivery platform. With this in view, reports of studies on the interaction between nanosized graphene oxide flakes and biological cells are beginning to emerge. However, the number of studies remains limited, and most used labeled graphene oxide samples to track the material upon endocytosis. Unfortunately, the labeling process alters the surface functionality of the graphene oxide, and this additional funcfionalization has been shown to alter the cellular response. Hence, in this work we used label-free graphene oxide. We carefully tracked the uptake of three different nanoscale graphene oxide flake size distributions using scanning/transmission electron microscopy. Uptake was investigated in undifferentiated human monocyte cells （THP-1） and differentiated macrophage cells. The data show clear size dependence for uptake, such that larger graphene oxide flakes （and clusters） are more easily taken up by the cells compared to smaller flakes. Moreover, uptake is shown to occur very rapidly, within two min of incubation with THP-1 cells. The data highlights a crucial need for cellular incubation studies with nanoparticles, to be conducted for short incubation periods as certain dependencies （e.g., size and concentration） are lost with longer incubation periods.

关键词： graphene oxide THP-1 cells label-free uptake size dependence

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In-situ observations of novel single-atom thick 2D tin membranes embedded in graphene

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Nano Research 2021年第3期14卷 747-753页

作者： Xiaoqin Yang Huy Q.Ta Wei Li Rafael G.Mendes Yu Liu Qitao Shi Sami Ullah alicja bachmatiuk Jinping Luo Lijun Liu Jin-Ho Choi Mark H.Rummeli School of Energy and Power Engineering Xi’an Jiaotong UniversityNo.28Xianning West RoadXian710049China

There is ongoing research in freestanding single-atom thick elemental metal patches,including those suspended in a two-dimensional(2D)material,due to their utility in providing new structural and energetic insight into novel metallic 2D *** pores have shown promise as support systems for suspending such *** study explores the potential of Sn atoms to form freestanding stanene and/or Sn patches in graphene *** atoms were deposited on graphene,where they formed novel single-atom thick 2D planar clusters/patches(or membranes)ranging from 1 to 8 atoms within the graphene *** of three or more atoms adopted either a star-like or close-packed structural *** functional theory(DFT)calculations were conducted to look at the cluster configurations and energetics(without the graphene matrix)and were found to deviate from experimental observations for 2D patches larger than five *** was attributed to interfacial interactions between the graphene pore edges and Sn *** presented findings help advance the development of single-atom thick 2D elemental metal membranes.

关键词： in-situ transmission electron microscopy Sn atoms planar cluster graphene vacancy

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Single Cr atom catalytic growth of graphene

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Nano Research 2018年第5期11卷 2405-2411页

作者： Huy Q. Ta Uang Zhao Wanjian Yin Darius Pohl Bemd Rellinghaus Thomas Gemming Barbara Trzebicka Justinas Palisaitis Gao Jing Per O. A. Persson Zhongfan Liu alicja bachmatiuk Mark H. Rummeli Soochow Institute for Energy and Materials Innovations College of Physics Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University Suzhou 215005 China Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province Soochow University Suzhou 215006 China Centre of Polymer and Carbon Materials Polish Academy of Sciences M. Curie-Sklodowskiej 34 Zabrze 41-819 Poland IFW Dresden Helmholtz Strasse 20 01069 Dresden Germany Department of Physics Chemistry and Biology (IFM) Linkoping University SE-581 83 Linkoping Sweden Center for Nanochemistry Beijing Science and Engineering Centre for Nanocarbons Beijing National Laboratory for Molecular Sciences College of Chemistry and Molecular Engineering Peking University Beijing 100871 China

Single atoms are the ultimate minimum size limit for catalysts. Graphene, as an exciting, ultimately thin （one atom thick） material can be imaged in a transmission electron microscope with relatively few imaging artefacts. Here, we directly observe the behavior of single Cr atoms in graphene mono- and di-vacancies and, more importantly, at graphene edges. Similar studies at graphene edges with other elemental atoms, with the exception of Fe, show catalytic etching of graphene. Fe atoms have been shown to both etch and grow graphene. In contrast, Cr atoms are only observed to induce graphene growth. Complementary theoretical calculations illuminate the differences between Fe and Cr, and confirm single Cr atoms as superior catalysts for sp^2 carbon growth.

关键词： in situ transmission electron microscope (TEM) electron driven catalysis Cr single atom graphene synthesis

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Chemical vapor deposition growth of large-scale hexagonal boron nitride with controllable orientation

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Nano Research 2015年第10期8卷 3164-3176页

作者： Xiuju Song Junfeng Gao Yufeng Nie Teng Gao Jingyu Sun Donglin Ma Qiucheng Li Yubin Chen Chuanhong Jin alicja bachmatiuk Mark H. Rummeli Feng Ding Yanfeng Zhang Zhongfan Liu CenterforNanochemistry(CNC) BeijingScienceandEngineeringCenterforLowDimensionalCarbonMaterialsBeijingNationalLaboratoryforMolecularSciencesCollegeofChemistryandMolecularEngineeringAcademyforAdvancedInterdisciplinaryStudiesPekingUniversityBeijing100871China DepartmentofMaterialsScienceandEngineering CollegeofEngineeringPekingUniversityBeijing100871China InstituteofTextilesandClothing HongKongPolytechnicUniversityHongKongChina StateKeyLaboratoryofSiliconMaterials DepartmentofMaterialsScienceandEngineeringZhejiangUniversityHangzhou310027China CentreofPolymerandCarbonMaterials PolishAcademyofSciencesM.Curie-Sklodowskiej34Zabrze41-819Poland DepartmentofEnergyScience DepartmentofPhysicsSungkyunkwanUniversitySuwon440-746RepublicofKorea IBSCenterforIntegratedNanostructurePhysics InstituteforBasicScience(IBS)Daejon305-701RepublicofKorea

Chemical vapor deposition （CVD） synthesis of large-domain hexagonal boron nitride （h-BN） with a uniform thickness is very challenging, mainly due to the extremely high nucleation density of this material. Herein, we report the successful growth of wafer-scale, high-quality h-BN monolayer films that have large single-crystalline domain sizes, up to -72 μm in edge length, prepared using a folded Cu-foil enclosure. The highly confined growth space and the smooth Cu surface inside the enclosure effectively reduced the precursor feeding rate together and induced a drastic decrease in the nucleation density. The orientation of the as-grown h-BN monolayer was found to be strongly correlated to the crystallographic orientation of the Cu substrate： the Cu （111） face being the best substrate for growing aligned h-BN domains and even single-crystalline monolayers. This is consistent with our density functional theory calculations. The present study offers a practical pathway for growing high-quality h-BN films by deepening our fundamental understanding of the process of their growth by CVD.

关键词： hexagonal boron nitride Cu foil domain size orientation chemical vapordeposition (CVD)

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Enhanced π-π Interactions Between a C_(60) Fullerene and a Buckle Bend on a Double-Walled Carbon Nanotube

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Nano Research 2010年第2期3卷 92-97页

作者： Sandeep Gorantla Stanislav Avdoshenko Felix Börrnert alicja bachmatiuk Maria Dimitrakopoulou Franziska Schäffel Ronny Schönfelder Jürgen Thomas Thomas Gemming Jamie HWarner Gianaurelio Cuniberti Jürgen Eckert Bernd Büchner Mark H.Rümmeli IFW Dresden P.O.Box 270116D-01171 DresdenGermany Institute for Materials Science and Max Bergmann Center of Biomaterials Dresden University of TechnologyDresden 01062Germany Department of Materials University of OxfordParks Rd.Oxford OX13PHUnited Kingdom

In situ low-voltage aberration corrected transmission electron microscopy(TEM)observations of the dynamic entrapment of a C_(60) molecule in the saddle of a bent double-walled carbon nanotube is *** fullerene interaction is non-covalent,suggesting that enhancedπ-πinteractions(van der Waals forces)are *** molecular dynamics calculations confirm that the increased interaction area associated with a buckle is sufficient to trap a ***,they show hopping behavior in agreement with our experimental *** findings further our understanding of carbon nanostructure interactions,which are important in the rapidly developing field of low-voltage aberration corrected TEM and nano-carbon device fabrication.

关键词： Carbon nanotubes fullerenes low-voltage transmission electron microscopy molecule trap

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碳纳米管提升氧化亚硅负极稳定性的起源

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Science China Materials 2023年第9期66卷 3461-3467页

作者：周军华王佳琪施启涛连雪玉刘玉刘立军 alicja bachmatiuk 孙靖宇杨瑞枝 Jin-Ho Choi Mark H.Rümmeli College of Energy Soochow Institute for Energy and Materials Innovations(SIEMIS)Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu ProvinceSoochow UniversitySuzhou 215006China School of Energy and Power Engineering Xi’an Jiaotong UniversityXi’an 710049China LUKASIEWICZ Research Network PORT Polish Center for Technology DevelopmentStablowicka 147Wroclaw 54-066Poland Beijing Graphene Institute(BGI) Beijing 100095China Leibniz Institute for Solid State and Materials Research Dresden P.O.Box 270116D-01171 DresdenGermany Centre of Polymer and Carbon Materials Polish Academy of SciencesM.Curie-Sklodowskiej 34Zabrze 41-819Poland Institute of Environmental Technology VSB-Technical University of Ostrava17.Listopadu 15Ostrava70833Czech Republic

高容量的SiO (SO)合金基材料是最有希望的下一代锂离子电池负极之一.使用碳纳米管(CNTs)导电添加剂,虽然可以有效地解决SO较差的循环寿命这一难题,然而除了动力学因素之外,其它潜在的作用机理目前仍不明确.在本工作中,一系列的测试结果... 详细信息

高容量的SiO (SO)合金基材料是最有希望的下一代锂离子电池负极之一.使用碳纳米管(CNTs)导电添加剂,虽然可以有效地解决SO较差的循环寿命这一难题,然而除了动力学因素之外,其它潜在的作用机理目前仍不明确.在本工作中,一系列的测试结果表明CNTs可以使电极在循环后依然维持完整的导电网络,确保均匀的电化学反应.CNTs也使得电极局部的体积膨胀得到了抑制,从而避免了固态电解质界面的不断生长,活性材料从集流体剥离,甚至析锂.得益于CNTs的上述作用, SO-CNTs负极在0.5 C (1 C=1600 mA g^(-1))下可以稳定循环200次,其容量保持率为96.2%. CNTs的作用机理也进一步地在商业化的SO/石墨复合负极(SO650-CNTs, 1 C=650 mA g^(-1))中得到了验证,SO650-CNTs在1 C下循环400次后容量保持率为80.6%.本工作为导电添加剂的作用机理提出了新的见解,并将有助于加速合金类负极的商业化进程.

关键词：导电添加剂固态电解质电化学反应动力学因素活性材料体积膨胀硅负极导电网络

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