Enhanced π-π Interactions Between a C_(60) Fullerene and a Buckle Bend on a Double-Walled Carbon Nanotube

作     者：Sandeep Gorantla Stanislav Avdoshenko Felix Börrnert Alicja Bachmatiuk Maria Dimitrakopoulou Franziska Schäffel Ronny Schönfelder Jürgen Thomas Thomas Gemming Jamie HWarner Gianaurelio Cuniberti Jürgen Eckert Bernd Büchner Mark H.Rümmeli 

作者机构：IFW DresdenP.O.Box 270116D-01171 DresdenGermany Institute for Materials Science and Max Bergmann Center of BiomaterialsDresden University of TechnologyDresden 01062Germany Department of MaterialsUniversity of OxfordParks Rd.Oxford OX13PHUnited Kingdom 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2010年第3卷第2期

页      面：92-97页

核心收录：

学科分类：081704[工学-应用化学] 07[理学] 08[工学] 0817[工学-化学工程与技术] 070303[理学-有机化学] 0703[理学-化学] 

基　　金：SG acknowledges the“Pakt für Forschung und Innovation” and FS the Cusanuswerk for financial support.AB thanks the European Union(EU)for a Marie Curie(MC)fellowship(multifunctional carbon nanotubes for biomedical applications(CARBIO)).MD thanks the Deutscher Akademischer Austausch Dienst(DAAD).SA and GC thanks the EU project carbon nanotube devices at the quantum limit(CARDEQ)and the Korea Science and Engineering Foundation World Class University(WCU)Project No.R31-2008-000-10100-0 

主　　题：Carbon nanotubes fullerenes low-voltage transmission electron microscopy molecule trap 

摘      要：In situ low-voltage aberration corrected transmission electron microscopy(TEM)observations of the dynamic entrapment of a C_(60) molecule in the saddle of a bent double-walled carbon nanotube is *** fullerene interaction is non-covalent,suggesting that enhancedπ-πinteractions(van der Waals forces)are *** molecular dynamics calculations confirm that the increased interaction area associated with a buckle is sufficient to trap a ***,they show hopping behavior in agreement with our experimental *** findings further our understanding of carbon nanostructure interactions,which are important in the rapidly developing field of low-voltage aberration corrected TEM and nano-carbon device fabrication.