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High-pressure synthesis and properties of CeO_2.ZrO_2.solid solution

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Chinese Science Bulletin 2001年第10期46卷 801-806页

作者： XU Dapeng, WANG Quanyong, LU Zhe, LIU Zhiguo, ZHANG Gongmu & SU Wenhui1. Department of physics, Jilin University, Changchun 13.02.1}1} 2. International Center for Materials physics, Chinese Academy of Sciences, Shenyang 110015, china 3. Center for condensed matter and radiation physics, china Center of advanced Science and {12. (World Laboratory), Beijing 100080, china Department of physics Jilin University Changchun China International Center for Materials physics Chinese Academy of Sciences Shenyang China Center for condensed matter and {2. {3. China Center of Advanced Science and Technology (World Laboratory) Beijing China

Using nanoparticles of CeO2.and ZrO2.prepared by the chemical precipitation method as starting materials, the single-phase cubic Ce0.5Zr0.5O2.solid solution (c-Ce0.5Z0.5O2. has been synthesized under 3.1 GPa at 1073.K for the first time. The structure of the c-Ce0.5Zr0.5O2.has not been changed before and after annealing at 773.K for 1 h. Only an unknown EPR signal (g =1.990) has been observed in the c-Ce0.5Zr0.5O2.and not varied after annealing at 773.K for 1 h, which exhibited that there exists no Ce3. in the c-Ce0.5Zr0.5O2.and the Ce4+ has not been reduced into Ce3. after annealing. The transport mechanism is ionic for the c-Ce0.5Zr0.5O2. The bulk conductivity (a =1.2.10-5 S/cm at 82.0}K, σ=2.1 ×10-3.S/cm at 112. K) is the same as that of CeO2. but smaller than that of Y2.3.stabilized ZrO2. A marked curvature at T = 82.0}K has been observed in the Arrhenius plot of the bulk conductivity. The activation energy below 82.0}K is lower than that above 82.0}K, and the reason has been discussed.

关键词： CeO2.ZrO2 nanocrystalline high-pressure and -temperature solid-state reaction solid solution.

Impurity in Pairwise Entanglement of Heisenberg XX Open Chain

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Communications in Theoretical physics 2007年第12期 1009-1016页

作者： XI Xiao-Qiang~(1,2.CHEN Wen-Xue~1 LIU Qi~3.and YUE Rui-Hong~3.1 Department of Applied Mathematics and {2.,Xi’an Institute of Posts and Telecommunications,Xi’an 710061,china~2.Joint Laboratory of advanced {3. in Measurements,Beijing National Laboratory for condensed matter {2.,Institute of {2.,the Chinese Academy of Sciences,Beijing 100080,china~3.Institute of Modern {2.,North-West University,Xi’an 710069,china Department of Applied Mathematics and physics Xi'an Institute of Posts and Telecommunications Xi'an 710061 China Joint Laboratory of advanced technology in Measurements Beijing National Laboratory for Condensed Matter Physics Institute of Physics the Chinese Academy of Sciences Beijing 100080 China Department of Applied Mathematics and physics Xi'an Institute of Posts and Telecommunications Xi'an 710061 China Institute of Modern physics North-West University Xi'an 710069 China

We calculate the concurrence of all pairwise entanglement of Heisenberg XX open chain with single systemimpurity in three-qubit and four-qubit cases,and find that the impurity parameter J_i has great effect on *** the proper parameter J_i,we can obtain the maximal pairwise entanglement of the nearestqubits and make the non-nearest qubits entangle.

关键词： system impurity pairwise entanglement Heisenberg XX chain

Carbon nanotube transistors with graphene oxide films as gate dielectrics

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Science china(physics,Mechanics & Astronomy) 2010年第5期53卷 828-833页

作者： FU WangYang,LIU Lei,WANG WenLong,WU MuHong,XU Zhi,BAI XueDong & WANG EnGe Beijing National Laboratory for condensed matter {2.,Institute of {2.,Chinese Academy of Sciences,Beijing 100190,china 1. Beijing National Laboratory for condensed matter {2. Institute of Physics Chinese Academy of Sciences Beijing 100190 China

Carbon nanomaterials,including the one-dimensional(1-D) carbon nanotube(CNT) and two-dimensional(2.D) graphene,are heralded as ideal candidates for next generation *** essential component for the development of advanced nanoelectronics devices is processing-compatible ***,in analogy to the widespread use of silicon dioxide(SiO2. in silicon microelectronic industry,we report the proof-of-principle use of graphite oxide(GO) as a gate dielectrics for CNT field-effect transistor(FET) via a fast and simple solution-based processing in the ambient *** exceptional transistor characteristics,including low operation voltage(2.V),high carrier mobility(950 cm2.V-1 s-1),and the negligible gate hysteresis,suggest a potential route to the future all-carbon nanoelectronics.

关键词： carbon-based nanoelectronics graphene oxide gate dielectrics

A new way of transformation from a-quartz to coesite

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Progress in Natural Science:Materials International 2006年第10期16卷 1090-1097页

作者： SU Wenhui, LIU Shue, XU Dapeng, WANG Weiran, YAO Bin, GUO Xingyuan, LIU Zhiguo, and ZHONG Zheng ( Center for the condensed matter Science and {2., Harbin Institute of {2., Harbin 150001, china Center for Rare-Earth Solid State physics, Jilin University, Changchun 13.02.6} china International Center for Materials physics, Chinese A-cademy of Sciences, Shenyang 110015, china Center for condensed matter and radiation physics, china Center of advanced Science and {2. (World Laboratory), Beijing 100080, china Department of physics, University of Windsor, Windsor, ON N9B 3.4, Canada) Center for Rare-Earth Solid State physics Jilin University Changchun 130023 China International Center for Materials physics Chinese Academy of Sciences Shenyang 110015 China Center for condensed matter and {2. {3. China Center of Advanced Science and Technology (World Laboratory) Beijing 100080 China Center for the condensed matter Science and {2. Harbin Institute of Technology Harbin 150001 China Department of physics University of Windsor Windsor ON N9B 3P4 Canada

A laboratory method combining the high-energy mechanical ball milling and high static pressure has been suggested for modelling synthesis of coesite in the Earth's crust. A window of milling time, a mechanical collision-induced intermediate phase ofα-quartz and its condition of easily crystallizing into coesite under the condition of 3.0 GPa, 92.0}K, < 1.0 min have been discovered. The new method needs much shorter synthesizing time and lower synthesizing critical pressure than those used before. The Raman spectra for the coesite synthesized by the present method have covered all the information of those natural and synthesized coesites reported before. It is demonstrated that this method has a great potential in geo-science research and implied the other possible mechanism of coesite formation in the Earth's crust.

关键词： quartz-coesite high-energy mechanical ball milling high state pressure Raman spectrum metastable phase sub-duction-exhumation of plate.

Fabrication of CoFe Nanostructures by Holographic Lithography

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Fabrication of CoFe Nanostructures by Holographic Lithograph...

Difference of Crystallization Processes Induced from the Mechanical Milling and Annealing under Normal and High Pressure in Amorphous Fe-N Alloy

2.07亚洲光电子会议纳米光子学/纳米结构/纳米计量学分会场

作者： Zijun Zhang a,Xudi Wang b,Ying Liu a,Yuxian Guo a,Yilin Hong a,Xiangdong Xua,Shaojun Fu a,Pengshou Xu a,Jie Wang a,Jianwang Cai c a National Synchrotron radiation Laboratory,University of Science and technology of{2./P.O.Box 602.,Hefei,Anhui 2.3}02.,{3. b Academic of Precision Machinery and Precision Instrumentation,USTC,Hefei 2.3}02.,{3. c State Key Laboratory of Magnetism,Institute of physics and Center of condensed matter physics,Chinese Academy of Sciences,Beijing 100080,{3.

A novel process that combines interference lithography and ion beam etching is presented for fabrication of magnetic submicron structures and nanostructures in this *** of an antireflective coating,vertical standing wave patterns were removed using oxygen descumming process.A series of magnetic submicronmeter structures were fabricated on Co0.9Fe0.1 films by this *** of magnetic nanostructures was performed by using a high exposure dose and modifications in optimized development conditions.A thin Au film was deposited on the sidewall of the magnetic nanostructures to avoid the oxidation of Co and *** effect of this method was confirmed by X-ray photoelectron spectroscopy(XPS).Hysteresis loops measured by a highly sensitive superconducting quantum interference device(SQUID)technique show the different magnetic properties of the magnetic patterns with different critical dimensions.

关键词： holographic lithography,patterned media,oxygen descumming,hysteresis loops

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Difference of Crystallization Processes Induced from the Mec...

Superconductivity of topological matters induced via pressure

18th International Conference on High Pressure Science and technology

作者： Li Liu Bin Yao Shu-E Liu.Xu-Dong Zhao.Wen-Hui Su Department of physics Jilin University Changckun 13.02.1}P. R. china Department of Material Science Faculty of Science National University of Singapore Singapore 1192.0.Center for condensed {3. and radiation physics china Center of advanced Science and technology (World Lab) PO Box 873. Beijing {12. P. R. china

＜正＞ Based on crystallization thermodynamics and kinetics, crystallization products of amorphous alloys are mainly influenced by pressure, temperature and composition, and the crystallization temperature is affected by pressure and composition. However, only the effects of temperature and composition on mechanical crystallization were considered in previously reported works. In order to confirm the effect of high local pressure on crystallization of amorphous Fe-N alloy, an amorphous Fe-N alloy was prepared by ball milling of a mixture of Fe and hexagonal boron nitride. Its crystallization processes were studied in the case of mechanical milling （MM） and annealing under normal and high pressure. The 2.h-milled sample containing amorphous Fe-N was annealed for In under pressures of 2.to 4GPa and at temperatures ranging from 580K to 1170K.. XRD showed the result of the difference between MM process and thermal crystallization process. It crystallizes to e-FexN containing N content much less than its lower composition limit of 2.at% under normal pressure during MM and annealing under high pressure, while it transforms into γ-Fe4N during annealing under normal pressure. It was demonstrated in the present experiment that the ε-FexN with lower N content is a thermodynamic stable state under pressures of 3.to 4 GPa and at temperatures from 690K to 800K, though it is not under normal pressure. Therefore, the difference in crystallization product between mechanical and thermal crystallization is attributed to the effects of local pressure and local temperature on thermodynamic stable state of Fe-N alloy.

关键词： Fe-N alloy Crystallization High pressure.

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Frontiers of physics 2012年第2期7卷 193-199页

作者： Jun-liang Zhang (1) (2. Si-jia Zhang (1) Hong-ming Weng (1) Wei Zhang (1) Liu-xiang Yang (1) Qing-qing Liu (1) Pan-pan Kong (1) Jie Zhu (1) Shao-min Feng (1) Xian-cheng Wang (1) Ri-cheng Yu (1) Lie-zhao Cao (2. Shoucheng Zhang (3. (4) Xi Dai (1) Zhong Fang (1) Chang-qing Jin (1) 1. Beijing National Laboratory for condensed matter {2. & Institute of {2. Chinese Academy of Sciences Beijing 100190 China2. Department of Physics University of Science & Technology of China Hefei 230026 China3. Department of Physics McCullough Building Stanford University Stanford CA 94305-4045 USA4. Center for Advanced Study Tsinghua University Beijing 100084 China

By applying pressure on the topological insulator Bi2.e3.single crystal, superconducting phase was found without a crystal structure phase transition. The new superconducting phase is under the pressure range of 3.GPa to 6 GPa. The high pressure Hall effect measurements indicated that the superconductivity caused by bulk hole pockets. The high pressure structure investigations with synchrotron X-ray diffraction indicated that the superconducting phase is of similar structure to that of ambient phase structure with only slight change with lattice parameter and internal atomic position. The topological band structures indicate the superconducting phase under high pressure remained topologically nontrivial. The results suggested that topological superconductivity can be realized in Bi2.e3.due to the proximity effect between superconducting bulk states and Dirac- type surface states. We also discussed the possibility that the bulk state could be a topological superconductor.

关键词： topological insulator high pressure

Structural phase transitions of tellurium nanoplates under pressure

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Chinese physics B 2015年第3期24卷 280-283页

作者：李超 Arfan Bukhtiar 沈希孔盼盼王伟鹏赵豪飞姚湲邹炳锁李延春李晓东刘景靳常青禹日成 Beijing National Laboratory for condensed matter {2. Institute of PhysicsChinese Academy of Sciences Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems Beijing Institute of Technology Institute of High Energy physics Chinese Academy of Sciences

In situ high-pressure angle dispersive x-ray diffraction experiments using synchrotron radiation on Te nanoplates were carried out with a diamond anvil cell at room temperature. The results show that Te-Ⅰ with a trigonal structure transforms to triclinic Te-Ⅱ at about 4.9 GPa, Te-Ⅱ transforms to monoclinic Te-Ⅲ at about 8.0 GPa, Te-Ⅲ turns to rhombohedral Te-Ⅳ at about 2.1}8 GPa, and Te-Ⅳ changes to body centered cubic Te-Ⅴ at 2..6 GPa. The bulk moduli B0 of Te nanoplates are higher than those of Te bulk materials.

关键词： tellurium nanoplates phase transition high pressure

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铁电材料的同步辐射研究

物理学进展 1998年第1期18卷 76-104页

作者：李旗张新夷中国科学技术大学国家同步辐射实验室

电子学及超导体等领域的发展，推动了铁电研究的进一步深入和发展。同步辐射的多种优异特性使之在凝聚态物理中得到了广泛应用，也为铁电研究提供了强有力的研究手段。本文结合几种具体实验手段，简要介绍同步辐射在铁电研究中的一些应... 详细信息

电子学及超导体等领域的发展，推动了铁电研究的进一步深入和发展。同步辐射的多种优异特性使之在凝聚态物理中得到了广泛应用，也为铁电研究提供了强有力的研究手段。本文结合几种具体实验手段，简要介绍同步辐射在铁电研究中的一些应用，包括Ｘ射线吸收、Ｘ射线驻波、Ｘ射线散射、光学光谱、光电子能谱及形貌术，对光声光热也作了简单介绍。

关键词： X射线吸收原子结构驻波铁电材料同步辐射